Abstract: Disclosed is an image sensing device and an operating method thereof, the image sensing device including an image sensor suitable for generating first image signals, corresponding to some of a plurality of pixels, in a binning mode, and an image processor suitable for generating second image signals, corresponding to other pixels, by performing an interpolation operation based on the first image signals in the binning mode.

Abstract: A photoelectric converter includes a pixel array including a plurality of pixels, a capacitive coupling amplifier configured to amplify a signal output from the pixel array, and a delta-sigma AD converter configured to convert, into a digital signal, an analog signal output from the amplifier. The amplifier is formed by a plurality of first elements including an active element and a capacitive element. The delta-sigma AD converter is formed by a plurality of second elements including an active element and a capacitive element. A breakdown voltage of at least one of the plurality of second elements forming the delta-sigma AD converter is lower than a breakdown voltage of the plurality of first elements forming the amplifier.

Abstract: An imaging device of the present disclosure includes a plurality of pixels each including a light receiving element that performs photoelectric conversion on incident light to generate an electrical signal, the pixels outputs a detection signal when detecting that an amount of change of the electrical signal exceeds a predetermined threshold, and a control section that reads out, when pixels of a pixel combination of two or more pixels including a pixel of interest both output detection signals, the detection signals. Further, electronic equipment of the present disclosure includes the imaging device including the plurality of pixels and a detection section that have the above-mentioned configurations.

Abstract: Vehicle sensor systems include modular sensor kits having one or more pods (e.g., sensor roof pods) and/or one or more bumpers (e.g., sensor bumpers). The sensor roof pods are configured to couple to a vehicle. A sensor roof pod may be positioned atop a vehicle proximate a front of the vehicle, proximate a back of the vehicle, or at any position along a top side of the vehicle being coupled, for example, using a mounting shim or a tripod. The sensor roof pods can include sensors (e.g., LIDAR sensors, cameras, ultrasonic sensors, etc.), processing units, control systems (e.g., temperature and/or environmental control systems), and communication devices (e.g., networking and/or wireless devices).

Abstract: An object is to improve a frame rate in a solid-state imaging element that employs a global shutter method. In the solid-state imaging element, a photoelectric conversion element generates a charge by photoelectric conversion. A charge holding transistor holds the charge. A backward flow prevention transistor generates a potential barrier between the photoelectric conversion element and the charge holding transistor immediately after the charge is transferred from the photoelectric conversion element to the charge holding transistor. A floating diffusion layer accumulates the charge and generates a voltage corresponding to an amount of the charge. A transfer transistor transfers the charge from the charge holding transistor to the floating diffusion layer.

Abstract: A photoelectric conversion device according to one embodiment includes: a first substrate including a pixel that includes a photoelectric conversion element; and a second substrate including a first control unit that includes a first signal processing unit configured to process a signal from the pixel, the second substrate being stacked together with the first substrate. The signal from the pixel is output to a second signal processing unit disposed at a position different from a position of the first signal processing unit, a path through which the signal from the pixel is output to the first signal processing unit is different from a path through which the signal from the pixel is output to the second signal processing unit, and the first control unit is configured to control the pixel on the basis of the signal processed by the first signal processing unit.

Abstract: In a pixel 200, a floating diffusion FD11 and a first capacitor CS11 are selectively connected to each other via a first connection element LG11-Tr, to change the capacitance of the floating diffusion FD11 between a first capacitance and a second capacitance, thereby changing the conversion gain between a first conversion gain (HCG) corresponding to the first capacitance and a second conversion gain (MCG) corresponding to the second capacitance. The floating diffusion FD11 and a second capacitor CS12 are connected together through a second connection element SG11-Tr to change the capacitance of the floating diffusion FD11 to a third capacitance, thereby changing the conversion gain of the source following transistor SF11-Tr to a third conversion gain (LCG) corresponding to the third capacitance.

Abstract: A sensing device that detects whether an edge is present or absent achieves improved accuracy in detection of an edge. The sensing device includes a level control circuit, a comparison circuit, and an edge determination circuit. In this sensing device, the level control circuit amplifies or attenuates the signal level of one of a pair of pixel signals by a predetermined gain. The comparison circuit compares the pair of pixel signals with the signal level of the one pixel signal amplified or attenuated with each other, and outputs a result of the comparison. The edge determination circuit determines whether an edge is present or absent in reference to the comparison result.

Abstract: A photon counting device includes a plurality of pixels each including a photoelectric conversion element configured to convert input light to charge, and an amplifier configured to amplify the charge converted by the photoelectric conversion element and convert the charge to a voltage, an A/D converter configured to convert the voltages output from the amplifiers of the plurality of pixels to digital values; and a conversion unit configured to convert the digital value output from the A/D converter to the number of photons by referring to reference data, for each of the plurality of pixels, and the reference data is created based on a gain and an offset value for each of the plurality of pixels.

Abstract: Disclosed is an image processing method and apparatus. The image processing method includes receiving an image including frames captured over time in a light environment including an alternating current (AC) light, extracting AC pixels corresponding to the AC light from pixels in the image, estimating visual spaces of the AC pixels based on values of the AC pixels in the frames, estimating information of the AC light included in the image based on the visual spaces, and processing the image based on the information of the AC light.

Abstract: An image sensor includes a pixel suitable for supplying a pixel signal corresponding to sensed light to an output node; a current source suitable for sinking a current from the output node and increasing the amount of sinking current in a first boosting section within a section in which the pixel signal is output from the pixel; and an analog-to-digital conversion circuit suitable for digitally converting a voltage of the output node.

Abstract: In a solid-state image sensor provided with a comparator that compares a reference signal and a pixel signal, the image quality of image data is improved. A voltage divider circuit supplies a divided voltage of an input voltage and a predetermined reference voltage that are input. An input-side differential transistor outputs a drain current corresponding to the gate-source voltage between the divided voltage input to the gate and a predetermined source voltage. An output-side differential transistor outputs a voltage corresponding to the drain current as a result of comparison between the input voltage and the reference voltage. A control transistor reduces the gate-source voltage in a case where the input voltage is out of a predetermined range.

Abstract: An analog-to-digital converting circuit includes: an analog-to-digital converter suitable for performing an analog-to-digital conversion on pixel signals of a plurality of pixels provided in a pixel array; a ramp signal generator suitable for providing a ramp signal to the analog-to-digital converter; and an auto-zero controller suitable for providing a reference voltage to the analog-to-digital converter to perform an auto-zeroing operation by using a row pixel for which a readout operation is performed by the analog-to-digital converter.

Abstract: An image sensor includes a pixel array including a plurality of pixels each including a photosensitive element, and a readout circuit, wherein the pixels are arranged in at least two columns, within each column at least some of the pixels of the column are connected with a common column bus, respectively, for each column the readout circuit includes a first analog-to-digital converter (ADC) and a second ADC, for each column the first ADC is connected with the column bus, and for each column the second ADC is connectable with at least one of the column bus and a reference potential or the second ADC is connected with one optically shielded pixel of the pixel array.

Abstract: An image sensor may include an array of image pixels arranged in rows and columns. The columns of pixels are coupled to corresponding delta sigma modulators. Each group of delta sigma modulators may be coupled to a column memory circuit. The column memory circuit may receive bits serially from each pixel column in the group. Once all bits in a bit stream from each pixel column have been stored into the column memory circuit, the column memory circuit may output one bit stream at a time to a shared filter circuit. The shared filter circuit may process an entire bit stream associated with a given column in one cycle. Sharing the filter circuit among multiple pixel columns can dramatically reduce circuit area for the image sensor.

Abstract: A method for operating an image sensor with a 4 rows×4 columns pixel group including 4 sub-pixel groups each including 4 pixels of 2 rows×2 columns includes: selecting and reading out a first pixel among 4 pixels in a first row of the pixel group; selecting and reading out, in a second row of the pixel group, a second pixel from a sub-pixel group other than a sub-pixel group including the first pixel; selecting and reading out, in a third row of the pixel group, a third pixel from a column other than a column including the first pixel and a column including the second pixel; and selecting and reading out, in a fourth row of the pixel group, a fourth pixel from a column other than the columns including the first pixel, the second pixel and the third pixel.

Abstract: To further capture an image in a solid-state image sensor that detects an address event. The solid-state image sensor includes a photoelectric conversion element, a charge accumulation unit, a transfer transistor, a detection unit, and a connection transistor. The photoelectric conversion element generates a charge by photoelectric conversion. The charge accumulation unit accumulates the charge and generates a voltage according to an amount of the charge. The transfer transistor transfers the charge from the photoelectric conversion element to the charge accumulation unit. The detection unit detects whether or not a change amount of a photocurrent according to the amount of the charge exceeds a predetermined threshold. The connection transistor connects the charge accumulation unit and the detection unit to cause the photocurrent to flow.

Abstract: A photoelectric conversion apparatus comprises a first substrate having a light-receiving array and a plurality of driving lines for supplying control signals to the array and a second substrate having a first circuit that includes a driver circuit group configured to generate the control signals and is configured to function as a vertical scanning circuit which supplies the control signals to at least some of the driving lines and a second circuit including a circuit group having the same arrangement as that of the driver circuit group. The second circuit overlaps the at least some driving lines. The at least some driving lines include a driving line not electrically connected to the second circuit. The second substrate includes, at a position overlapping the second circuit, an electrically conductive line used for power supply or transfer of a signal different from the control signals.

Abstract: An imaging element includes a reading circuit that reads out pixel data obtained by imaging a subject at a first frame rate, a memory that stores the read pixel data, and an output circuit that outputs image data based on the stored pixel data at a second frame rate. The first frame rate is a frame rate higher than the second frame rate. The pixel data includes phase difference pixel data and non-phase difference pixel data different from the phase difference pixel data. The reading circuit reads out the pixel data of each of a plurality of frames in parallel within an output period defined by the second frame rate as a period in which the image data of one frame is output, and performs reading of the non-phase difference pixel data and a plurality of reading of the phase difference pixel data within the output period.

Abstract: Embodiments disclosed herein provide for a system and method for recalibrating an augmented reality experience in mobile devices using a plurality of physical markers. The system and methods provide for realigning the digital representation to the physical world using known physical locations associated with the physical markers that map directly to the digital representation.