Abstract: A distance image capturing apparatus has a light source unit that emits an intermittent light pulse into a space, a light receiving unit that includes a plurality of pixels each having a photoelectric conversion device and electric charge accumulating units, and a distance image processing unit. The distance image processing unit acquires an electric charge amount distributed by a predetermined fixed number of times and accumulated in the accumulating units. The distance image processing unit acquires electric charge amounts accumulated in the accumulating units with different number of times of electric charge distribution as one set and selects one of a first electric charge amount with a larger number of electric charge distribution and a second electric charge amount for acquiring a distance from a subject based on a comparison result with a threshold.

Abstract: Row-by-row pixel read-out is executed concurrently within respective clusters of pixels of a pixel array, alternating the between descending and ascending progressions in the intra-cluster row readout sequence to reduce temporal skew between neighboring pixel rows in adjacent clusters.

Abstract: A sensor arrangement for light sensing for light-to-frequency conversion. The sensor arrangement includes a photodiode, an analog-to-digital converter (ADC) operable to perform a chopping technique in response to a first clock signal (CLK1), and convert a photocurrent (IPD) into a digital comparator output signal (LOUT). The ADC includes a sensor input coupled to the photodiode, an output for providing the digital comparator output signal (LOUT), an integrator including an integrator input coupled to the sensor input and operable to receive an integrator input signal, a first set of chopping switches coupled to a first amplifier, a second set of chopping switches electrically coupled to an output of the first amplifier and electrically coupled to input terminals of a second amplifier, and an integrator output providing an integrator output signal (OPOUT).

Abstract: A distributed, parallel, image capture and processing architecture provides significant advantages over prior art systems. A very large array of computational circuits—in some embodiments, matching the size of the pixel array—is distributed around, within, or beneath the pixel array of an image sensor. Each computational circuit is dedicated to, and in some embodiments is physically proximal to, one, two, or more associated pixels. Each computational circuit is operative to perform computations on one, two, or more pixel values generated by its associated pixels. The computational circuits all perform the same operation(s), in parallel. In this manner, a very large number of pixel-level operations are performed in parallel, physically and electrically near the pixels. This obviates the need to transfer very large amounts of pixel data from a pixel array to a CPU/memory, thus alleviating the significant high-speed performance constraints placed on modern image sensors.

Abstract: To suppress deterioration of image quality. A solid-state imaging device (1) according to an embodiment includes a plurality of unit pixels (100) each of which includes a photoelectric conversion element (PD) configured to generate an electric charge corresponding to an incident light quantity, a transfer transistor (102) configured to transfer the electric charge generated in the photoelectric conversion element, a charge accumulation unit (FD) configured to accumulate the electric charge transferred by the transfer transistor, an amplification transistor (1051, 1052) including at least two fingers that are connected to the charge accumulation unit in parallel, and a selection transistor (106) that is disposed corresponding to each of the fingers of the amplification transistor on a one-to-one basis.

Abstract: Solid-state imaging devices and electronic equipment are disclosed. In one example, a solid-state imaging device includes a pixel array section with pixels that perform photoelectric conversion disposed in an array. A preamplifier section receives pixel signals from the pixels and a threshold signal, and amplifies their differences as differential signals. The preamplifier section is set to a shutdown state on the basis of a first control signal input. A comparator compares the differential signals with a comparison reference signal. A preamplifier through circuit includes switching elements connecting the input terminals of the preamplifier section to input terminals of the comparator section, and sets the switching elements to a connection state on the basis of a second control signal input in the shutdown state. Thus, power consumption can be reduced under conditions that allow characteristics required for the preamplifier section to be moderated.

Abstract: An imaging device having first and second pixels is described. The first pixel includes a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The second pixel includes a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor.

Abstract: An image sensor includes a pixel array having a plurality of pixels arranged in rows and columns, a plurality of pixel readout lines coupled to respective pixels, a multiplexing circuit coupled to the pixel readout lines, a plurality of analog-to-digital converters coupled to the multiplexing circuit, and a controller configured to provide pixel readout signals of pixels arranged in a same column to the analog-to-digital converters through the multiplexing circuit for concurrent signal conversion.

Abstract: A photoelectric conversion apparatus including a plurality of pixels each having: a photoelectric conversion unit; a first charge holding unit; a second charge holding unit; a first gate; and a second gate. In a period when the photoelectric conversion unit is storing charges to be transferred to the first charge holding unit, the potential of the first gate is set to a first potential, and the potential of the second gate is set to a second potential. Both the first potential and the second potential are higher than the potential of the first gate in a period when the charges of the photoelectric conversion unit are transferred to the first charge holding unit and the potential of the second gate in a period when the charges of the photoelectric conversion unit are transferred to the second charge holding unit. The first potential is lower than the second potential.

Abstract: An image sensor uses a pixel circuit which includes a BJT phototransistor having multiple selectable beta values. The BJT is one semiconductor device includes: a substrate having a first conductivity type; a first well having the first conductivity type; a collector electrode having the first conductivity type in the first well; a second well having a first concentration of a second conductivity type; a first emitter electrode having the first conductivity type in the second well; a base electrode having the second conductivity type in the second well; a third well having a second concentration of the second conductivity type, wherein the second concentration is different from the first concentration; and a second emitter electrode having the first conductivity type in the third well.

Abstract: An active pixel sensor array includes plurality of pixel circuits arranged in multiple rows and one column or multiple rows and multiple columns, each pixel circuit including: photoelectric conversion sub-circuit; resetting sub-circuit for resetting photoelectric conversion sub-circuit based on reset signal; source following sub-circuit connected between resetting sub-circuit and photoelectric conversion sub-circuit; strobing sub-circuit connected to source following sub-circuit and for switching on/off state based on strobe signal; and pre-discharging sub-circuit with one terminal connected between source following sub-circuit and strobing sub-circuit, and for switching on/off state based on received pre-discharge signal; when pixel circuits are arranged in multiple rows and columns, on time and off time of strobing sub-circuit in same row are same, and on time of strobing sub-circuit in each row is same as that of pre-discharging sub-circuit in next row, and off time of strobing sub-circuit is same as that

Abstract: Described herein are embodiments of a mobile device case that allows a mobile device camera to view and/or capture images from multiple fields of view. The case may allow the mobile device camera to simultaneously capture image information from multiple different directions relative to the camera or mobile device. The fields of view may not be contiguous fields of view, such that there is a gap or other discontinuity between the fields of view. One field of view may be a field visible from or facing a surface of the mobile device on which the camera is disposed (e.g., the back of the mobile device) and another field of view may be one visible from or facing a different surface of the mobile device. Also described are embodiments of techniques for configuring a mobile device to capture and/or process images from multiple fields of view.

Abstract: In order to improve linearity characteristics in synthesis processing for expanding a dynamic range, an image pickup apparatus comprising an AD conversion unit for performing AD conversion of input signals by comparing a first ramp signal or a second ramp signal; a first synthesis unit for synthesizing a first signal AD converted using the first ramp signal and a second signal AD converted using the second ramp signal; a first correction unit for correcting a level difference between the first signal and the second signal when the first signal and the second signal are synthesized; an amplifier for amplifying pixel signals by different gains; a second synthesis unit for synthesizing the signals amplified by the different gains; and a second correction unit for correcting a level difference between the signals amplified by the different gains when the signals amplified by the different gains are synthesized.

Abstract: Provided is a camera module including a liquid lens including an electrode; a holder for receiving the liquid lens therein; a base disposed under the holder; a sensor board disposed under the base and including an image sensor; a connection board connected to at least a portion of the electrode of the liquid lens; and a terminal plate disposed at the base and electrically connected to the sensor board and the connection board.

Abstract: An imager that includes a pixel array with a plurality of columns having rows of pixels and with each pixel having a plurality of photodiodes and a common readout circuit that stores respective accumulation voltages from each of the plurality of photodiodes. The imager further includes row driver circuitry that controls the pixel array for pixel addressing and readout, with the row driver circuitry including a plurality of shift registers, and an image sensor controller that controls the plurality of shift registers to address the rows of pixels in the pixel array. Moreover, the row driver circuitry dynamically upward and downward shifts control signals to the pixel array, such that two rows of pixels in a single column of the pixel array are addressed during a single row time.

Abstract: An image device has an array of pixels, each pixel having a photosensitive area, a first storage node and a second storage node. A pixel is illuminated for a first period of time, and charge accumulated on the photosensitive area of the pixel during the first period of time is stored on the first storage node of the pixel. The pixel of the array is illuminated for a second period of time, and charge accumulated on the photosensitive area during the second period of time is stored on the second storage node of the pixel. A first signal is generated based on the charge stored on the first storage node, and a second signal is generated based on the charge stored on the second storage node. The first and second signals are combined using at least one subtraction operation having the first and second signals as operands.

Abstract: A solid-state imaging device includes: a latch circuit that holds a digital signal of pixel data, the digital signal having 1 bit; a driver circuit that outputs the digital signal held in the latch circuit to a read bit line pair; a sense amplifier connected to the read bit line pair; and a selector circuit that selects whether the digital signal output from the sense amplifier is to be output in normal form or in inverted form.

Abstract: The present disclosure relates to a signal processing apparatus and method, an imaging element, and an electronic apparatus capable of suppressing deterioration of subjective image quality. Driving of a shift register controlling transfer of pixel data of digital data obtained by A/D conversion is stopped in a part or the entirety of a period in which the A/D conversion is performed on a pixel output of an analog signal. The present disclosure can be applied to, for example, a signal processing apparatus, an imaging element, an imaging device, an image processing apparatus, an electronic apparatus, a signal processing method, a program, or the like.

Abstract: An imaging device of the present disclosure includes a detection unit that detects a specific region in a taken image as a region of interest, a control unit that performs control to read out a pixel signal at first pixel resolution in a region including the region of interest and read out a pixel signal at second pixel resolution lower than the first pixel resolution in a region not including the region of interest, and an analog-digital conversion unit that converts the pixel signal read out by the control by the control unit into a digital signal.

Abstract: There is provided an image sensor employing an avalanche diode. The image sensor includes a plurality of pixel circuits arranged in a matrix, a plurality of pulling circuits, a plurality of output circuits and a global current source circuit. Each of the plurality of pixel circuits includes a single photon avalanche diode and a P-type or N-type select switch transistor. Each of the plurality of pulling circuits is arranged corresponding to one pixel circuit column. The global current source circuit is used to form a current mirror with each of the plurality of pulling circuits. Each of the plurality of output circuits is shared by at least two pixel circuits.