Abstract: In a first aspect, a multilayer film includes a holographic image layer, a first heat-shrinkable layer and a first adhesive layer between the holographic image layer and the first heat-shrinkable layer. In a second aspect, an authentication label includes a holographic image layer, a first heat-shrinkable layer, a first adhesive layer between the holographic image layer and the first heat-shrinkable layer, and a back adhesive layer.

Abstract: A monomer having a plurality of tertiary alcoholic hydroxyl groups is provided. A useful polymer is obtained by polymerizing the monomer. From a resist composition comprising the polymer, a negative pattern which is insoluble in alkaline developer and has high etch resistance is formed at a high resolution.

Abstract: The present invention relates to a radiation-sensitive resin composition that contains: a compound that has a structure represented by the following formula (1); a first polymer that includes a fluorine atom; and a solvent. In the following formula (1), X represents a carbonyl group, a sulfonyl group or a single bond. Y+ represents a monovalent radiation-degradable onium cation. The first polymer preferably has at least one selected from the group consisting of a structural unit represented by the following formula (2a) and a structural unit represented by the following formula (2b). The first polymer preferably includes an alkali-labile group. The first polymer preferably includes an acid-labile group. It is preferred that a radiation-sensitive acid generator is further contained.

Abstract: The invention relates to a photopolymer formulation comprising a polyol component, a polyisocyanate component, a writing monomer, and a photoinitiator, containing a coinitiator and a dye having the formula F An, where F stands for a cationic dye and An? stands for an anion, wherein the dye having the formula F An comprises a water absorption of =5%. The invention further relates to a holographic medium, in particular in the form of a film, containing a photopolymer formulation according to the invention, to the use of such a medium for recording holograms, and to a special dye that can be used in the photopolymer formulation according to the invention.

Abstract: A fluoropolymer-photoresist composition containing fluorinated polymer for containment of liquid inks in the printing of electronic devices. Methods of applying and treating the fluoropolymer-photoresist composition containing fluorinated polymer to provide low surface energy before and after processing and development of the photoresist.

Abstract: Provided is a method for manufacturing a substrate having a concave pattern to be used for forming a high-definition pattern while suppressing wet-spreading and bleeding of a film-forming ink, provided is a composition to be used for manufacturing the substrate, and provided are a method for forming a conductive film, an electronic circuit, and an electronic device. The method for manufacturing a substrate having a concave pattern includes: (i) a step of applying, on a substrate 1, a composition containing a polymer having an acid-dissociable group and an acid generator to form a coating film 2 and (ii) a step of irradiating a predetermined portion of the coating film 2 with radiation. The method for forming a conductive film includes applying a conductive film-forming ink on the concave pattern formed in the exposed portion of the coating film 2 and heating the ink to form a pattern 6. The electronic circuit and the electronic device are provided by using the method for forming a conductive film.

Abstract: A polymer for resist use is obtainable from a hemiacetal compound having formula (1a) wherein R1 is H, CH3 or CF3, R2 to R4 each are H or a monovalent hydrocarbon group, X1 is a divalent hydrocarbon group, ZZ designates a non-aromatic mono- or polycyclic ring of 4 to 20 carbon atoms having a hemiacetal structure, k1=0 or 1, and k2=0 to 3. A resist composition comprising the polymer displays controlled acid diffusion and low roughness during both positive and negative tone developments.

Abstract: A photoresist composition comprising: a resin (A1) which has an acid-labile group; a resin (A2) which comprises a structural unit represented by formula (I); wherein R1 represents a C1-C13 fluorinated saturated hydrocarbon group, A1 represents a single bond, a C1-C6 alkanediyl group, or *-A2-X1-(A3-X2)a-(A4)b-, and R2 represents a C1-C18 hydrocarbon group; and an acid generator.

Abstract: A resin comprising: a structural unit represented by formula (I), and a structural unit having an acid-labile group.

Abstract: Disclosed are a monomer for a hardmask composition represented by the following Chemical Formula 1, a hardmask composition including the monomer, and a method of forming a pattern using the same. In Chemical Formula 1, A, A?, L and n are the same as in the detailed description.

Abstract: A resin composition of the present invention includes a polymer compound (A) containing a repeating unit (Q) represented by the following general formula (1): wherein R1 represents a hydrogen atom, a methyl group, or a halogen atom; R2 and R3 represent a hydrogen atom, an alkyl group, or a cycloalkyl group; L represents a divalent linking group or a single bond; Y represents a substituent excluding a methylol group; Z represents a hydrogen atom or a substituent; m represents an integer of 0 to 4; n represents an integer of 1 to 5; and m+n is 5 or less.

Abstract: Methods of micro- and nano-patterning substrates to form transparent conductive electrode structures or polarizers by continuous near-field optical nanolithography methods using a roll-type photomask or phase-shift mask are provided. In such methods, a near-field optical nanolithography technique uses a phase-shift or photo-mask roller that comprises a rigid patterned externally exposed surface that transfers a pattern to an underlying substrate. The roller device may have an internally disposed radiation source that generates radiation that passes through the rigid patterned surface to the substrate during the patterning process. Sub-wavelength resolution is achieved using near-field exposure of photoresist material through the cylindrical rigid phase-mask, allowing dynamic and high throughput continuous patterning.

Abstract: Novel photoacid generator compounds are provided. Photoresist compositions that include the novel photoacid generator compounds are also provided. The invention further provides methods of making and using the photoacid generator compounds and photoresist compositions disclosed herein. The compounds and compositions are useful as photoactive components in chemically amplified resist compositions for various microfabrication applications.

Abstract: The present invention is to provide: a photosensitive composition for volume hologram recording and a photosensitive substrate for volume hologram recording, which provide increased sensitivity during hologram recording and a high refractive index modulation amount, and which do not inhibit the decolorization of the sensitizing dye; and a volume hologram recorded medium which provides high-luminance hologram images with increased productivity.

Abstract: The invention relates to an assembly comprising a substrate and a photopolymer film, which are joined to one another partably at least in sections, the substrate comprising polyethylene terephthalate, and the photopolymer film comprising three-dimensionally crosslinked polyurethane matrix polymers, a writing monomer and a photoinitiator, characterized in that the substrate, after seven-day incubation at 23° C. in a 0.5 volume percent butyl acetate solution of the dye of formula (I) has an L value L1 and before the incubation an L value of L0, the L values being determined by CieLAB measurements, and the difference between the L values L1 and L0 satisfying the formula (II) L1?L0>?0.25??(formula II).

Abstract: A resist film structure is provided, which allows a resist layer to have improved photosensitivity to EUV or electron beams without changing the photosensitivity of the resist material itself. A metal layer 1 with a thickness as small as a nanometer level is provided on a resist polymer layer 2 formed on a substrate 3. When the resist layer in this structure is exposed to light, the metal layer 1 produces a surface plasmon effect to enhance the irradiation to the resist film, so that the photosensitivity of the resist film is improved.

Abstract: Methods of forming an electronic device, comprising in sequence: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises a quenching polymer and an organic solvent, wherein the quenching polymer comprises a unit having a basic moiety effective to neutralize acid generated by the photoacid generator in a surface region of photoresist layer; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer.

Abstract: A composite, which is a blend comprising: a nanoparticle comprising a core and a coating surrounding the core; and a polymer, wherein the coating of the nanoparticle comprises a ligand, wherein the ligand is a substituted or unsubstituted C1-C16 carboxylic acid or a salt thereof, a substituted or unsubstituted C1-C16 amino acid or a salt thereof, a substituted or unsubstituted C1-C16 dialkyl phosphonate, or a combination thereof; and wherein the polymer is a polymerization product of a photoacid generator comprising a polymerizable group; at least one unsaturated monomer, which is different from the photoacid generator comprising a polymerizable group; and a chain transfer agent of formula (I); wherein: Z is a y valent C1-20 organic group, x is 0 or 1, and Rd is a substituted or unsubstituted C1-20 alkyl, C3-20 cycloalkyl, C6-20 aryl, or C7-20 aralkyl.

Abstract: A photoresist composition and a method for forming a patterned photoresist, and a method for forming an integrated circuit pattern are provided. A photoresist composition is provided. The photoresist composition includes a first polymer, a second polymer; and a solvent. The first polymer is more soluble than the second polymer in an aqueous solution, and the first polymer has a higher etching resistance than the second polymer.

Abstract: An identification medium can be used in an opening label, clearly show signs of it having been opened, and also have a superior authenticity-confirming function. The identification medium has a structure including, in the following order as seen from the side of observation: an optical function layer that generates a color shift, a separation layer that is partially formed, a printed layer, and an adhesive layer, in which when an adhesive strength between the adhesive layer and an adherend is set to be Xa, an adhesive strength between the adhesive layer and the printed layer is set to be Xb, and an adhesive strength at a portion in which the separation layer is laminated between the optical function layer and the printed layer is set to be Xc, the adhesive strength of each part is set to satisfy Xa>Xb>Xc or Xb>Xa>Xc.