Abstract: Embodiments of the present invention relate to an apparatus and method of plasma assisted deposition by generation of a plasma adjacent a processing region. One embodiment of the apparatus comprises a substrate processing chamber including a top shower plate, a power source coupled to the top shower plate, a bottom shower plate, and an insulator disposed between the top shower plate and the bottom shower plate. In one aspect, the power source is adapted to selectively provide power to the top shower plate to generate a plasma from the gases between the top shower plate and the bottom shower plate. In another embodiment, a power source is coupled to the top shower plate and the bottom shower plate to generate a plasma between the bottom shower plate and the substrate support.

Abstract: The present disclosure provides methods and systems for controlling temperature. The method has particular utility in connection with controlling temperature in a deposition process, e.g., in depositing a heat-reflective material via CVD. One exemplary embodiment provides a method that involves monitoring a first temperature outside the deposition chamber and a second temperature inside the deposition chamber. An internal temperature in the deposition chamber can be increased in accordance with a ramp profile by (a) comparing a control temperature to a target temperature, and (b) selectively delivering heat to the deposition chamber in response to a result of the comparison. The target temperature may be determined in accordance with the ramp profile, but the control temperature in one implementation alternates between the first temperature and the second temperature.

Abstract: A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first or second electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. A conductive functional surface is disposed in a surrounding region around the plasma generation region and grounded to be coupled with the plasma in a sense of DC to expand the plasma.

Abstract: A plasma processing apparatus including a processing chamber for subjecting an object to plasma processing, a gas inlet, an evacuation device, a sample stage for the object, a power supply, and at least one induction coil. The at least one induction coil enables generation of the plasma in the processing chamber and is formed by connecting a plurality of identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage.

Abstract: A cassette capable of preventing breakage in glass substrates includes lower and upper frames; side frames between the lower and upper frames for connecting the lower and upper frames to each other, the side frames having a plurality of insertion recesses for receiving glass substrates; and a stopper at the rear of the cassette for preventing the glass substrates from exiting a rear portion of the cassette, wherein the stopper formed with a buffer covering material.

Abstract: Plasma processing equipment having a structure for preventing gap formation includes: a chamber inside which a plasma environment is formed; an upper electrode positioned at a upper position of the chamber; an electrostatic chuck positioned at a lower position of the electrostatic chuck, having a lower electrode and holding a wafer on a top surface thereof; a ring positioned at an outer side of the electrostatic chuck; and a gap prevention unit for isolating from the outside a space between the electrostatic chuck and the ring.

Abstract: A semiconductor device manufacturing unit is provided, wherein a cathode and an anode can be placed in a simple structure; wherein excellent film deposition and film thickness distribution can be gained; and wherein no cooling devices are required to be provided. A chamber 11 is formed so that the inside thereof can be controlled at a vacuum of an arbitrary degree. Anode supports 6 for supporting an anode 4 are placed at the bottom of the internal structure 8. The anode 4 is made of a material having a high electrical conductivity and a high heat resistance. The temperature of the anode 4 is controlled by a heater 24 so as to be in a range of from room temperature to 600° C. A cathode 2 is placed on a cathode support 5 so as to face the anode 4. The cathode support 5 is attached to an internal structure 8 made of a frame in a rectangular prism form provided within the chamber 11.

Abstract: The present invention provides a hollow cathode discharging apparatus including a hollow anode electrode, a hollow cathode electrode insulatedly fixed in the hollow anode electrode, a gas distribution pipe fixed in the hollow cathode electrode. The hollow anode electrode and the hollow cathode electrode are formed with anode openings and cathode openings respectively. Defined by the gas distribution pipe and the hollow cathode electrode and along the axis thereof is a spiral pathway winding through the cathode openings, so as to form a plurality of continuous and communicated reaction chambers. The gas distribution pipe is disposed with gas separation apertures communicated and adapted to introduce a reactive gas into the reaction chambers. The communicated reaction chambers enable uniform distribution of the reactive gas and thereby facilitate scale-up of the apparatus in axial. Accordingly, the present invention overcomes drawbacks of the prior art.

Abstract: A mask includes a base plate having aperture parts, and chips having aperture patterns and positioned in the aperture parts of the base plate. The mask is arranged on a bottom surface of a bed plate with a substrate on which a film is to be formed sandwiched therebetween. Magnets are arranged on the bed plate, and plugs which are attracted to the magnets are arranged in the base plate.

Abstract: A silicon shelf tower for hatch thermal processing of silicon wafers in a vertical furnace. The tower includes at least three silicon legs joined to bases and having a vertical arrangement of slots. Silicon shelves are detachably loaded by sliding them through the slots in the side legs and into the slot of the back leg. A interlocking mechanism detachably locks the shelves to the back leg while the slots in the two side legs laterally constrains the shelves. The shelves include cutouts to allow a robot paddle to load and unload wafers to the shelves. Circular holes in the shelves relieve stress and prevent wafer sticking Preferably, the shelves are formed from randomly oriented polycrystalline silicon. The shelves and towers can alternatively be made of other materials such as quartz and silicon carbide.

Abstract: A bolt which is driven into a female screw portion disposed in a brittle member in a wear environment includes a head formed of a wear resistant material, a body which is formed of a resin having elasticity or plasticity and has a first male screw portion, and a placed member disposed between the head and the body and formed of a wear resistant resin having elasticity or plasticity. The body further includes a second male screw portion disposed along a central axis of the body and the head includes a female screw portion which the second male screw portion is driven into. The placed member is of a plate shape and has a through hole in its central portion, and a diameter of the through hole is smaller than or equal to a nominal diameter of the first male screw portion and larger than or equal to a nominal diameter of the second male screw portion.

Abstract: Disclosed herein is an assembly for plasma generation comprising a cathode plate comprising a fixed cathode tip, the cathode tip being integral part of the cathode plate. The assembly further comprises at least one cascade plate, at least one separator plate disposed between the cathode plate and the cascade plate, an anode plate, and an inlet for a gas. The cathode plate, separator plate, cascade plate and anode plate are “electrically isolated” from one another, and the electrically isolated cathode plate, separator plate, and cascade plate define a plasma generation chamber. The cathode tip is disposed within the plasma generation chamber.

Abstract: A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300° C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.

Abstract: The invention relates to equipment for area-based surface treatment of an article by electric dielectric barrier discharge in the presence of a non-atmospheric controlled gaseous mixture, comprising a hollow metal electrode enabling the gaseous mixture to circulate therewithin and the mixture to be transported to a discharge area, whereby said electrode is divided into individual elements which can each be pivoted about a central axis to ensure sufficient distance between the element which is considered as being pivoted and the area of the article opposite the element in question so that the discharge cannot develop; the central pivoting axis is used as a channel for the circulation of the gaseous mixture inside the electrode and is provided with openings enabling the gaseous mixture to be evacuated to the discharge area; pivoting one of the elements of the electrodes blocks up the evacuating opening associated therewith and the gaseous mixture can only be evacuated via the evacuating openings of non-pivoted

Abstract: A magnetron plasma processing apparatus has a baffle plate interposed between a processing space and a gas exhaust port so as to confine a plasma in the processing space in a processing chamber. The baffle plate has through holes allowing the processing space and the gas exhaust port to communicate with each other. The baffle plate is provided along lines of magnetic force of a magnetic field at a position where the plate is located.

Abstract: A method for forming fin structures is provided. Sacrificial structures are provided on a substrate. Fin structures are formed on the sides of the sacrificial structures. The forming of the fin structures comprises a plurality of cycles, wherein each cycle comprises a fin deposition phase and a fin profile shaping phase. The sacrificial structure is removed.

Abstract: A method for etching a feature in an etch layer through a photoresist mask over a substrate is provided. A substrate with an etch layer disposed below a photoresist mask is placed in a process chamber. The photoresist mask is conditioned, wherein the conditioning comprises providing a conditioning gas comprising a hydrogen containing gas with a flow rate and at least one of a fluorocarbon and a hydrofluorocarbon with a flow rate to the process chamber; and energizing the conditioning gas to form the conditioning plasma. The conditioning plasma is stepped. An etch plasma is provided to the process chamber, wherein the etch plasma is different than the conditioning plasma. A feature is etched in the etch layer with the etch plasma.

Abstract: A system and method is disclosed for increasing the emissivity of solid materials, wherein first the surface of the material is mechanically worked to create micro-level defects, and then etched to create a deep micro-rough surface morphology. In this manner, higher efficiencies and lower energy consumption can be obtained when these modified materials are used for heating elements. Heating elements made in accordance with this process thus operate at lower temperatures with longer lifetimes, when the improved heating elements are used with various heating devices.

Abstract: An apparatus generating a plasma for removing metal oxide from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the metal oxide.

Abstract: A focus ring and a plasma processing apparatus capable of improving an in-surface uniformity of a surface and reducing occurrences of deposition on a backside surface of a peripheral portion of a semiconductor wafer compared to a conventional case are provided. Installed in a vacuum chamber is a susceptor for mounting the semiconductor wafer thereon and a focus ring is installed to surround the semiconductor wafer mounted on the susceptor. The focus ring includes an annular lower member made of a dielectric, and an annular upper member made of a conductive material and mounted on the lower member. The upper member includes a flat portion which is an outer peripheral portion having a top surface positioned higher than a surface to be processed of the semiconductor wafer W, and an inclined portion which is an inner peripheral portion inclined inwardly.