Abstract: An apparatus for removing material on a bevel of a wafer is provided. A wafer support with a diameter that is less than the diameter of the wafer, wherein the wafer support is on a first side of the wafer, and wherein an outer edge of the wafer extends beyond the wafer support around the wafer is provided. An RF power source is electrically connected to the wafer. A central cover is spaced apart from the wafer support. A first electrically conductive ring is on the first side of and spaced apart from the wafer. A second electrically conductive ring is spaced apart from the wafer. An electrically conductive liner surrounds the outer edge of the wafer. A switch is between the liner and ground, allowing the liner to be switched from being grounded to floating.

Abstract: A device (1) for plasma treatment comprises an electrode (2) having a surface (14) covered by a dielectric barrier (3), and an AC high voltage source (6) for applying an AC high voltage to the electrode (2) to bring about a dielectric barrier discharge (9) in a gas (10) at atmospheric pressure present in front of the dielectric barrier (3) in order to generate a plasma. To the end of generating the plasma even without a counter-electrode for the electrode (2), pointed tips are distributed over the surface (14) of the electrode (2), these pointed tips pointing towards the gas (10) in front of the dielectric barrier (3), whereas the dielectric barrier (3) has a smooth outer surface (15) facing the gas (10).

Abstract: An object of the present invention is to carry out stable film deposition for a long stretch of time without an evaporation material being stuck in a manufacturing apparatus that carries out evaporation. A driving portion that can move a crucible up and down is provided for an evaporation source of an evaporation apparatus. When the opening of the crucible is clogged with the evaporation material, the crucible is moved down and sealed in the evaporation source. The heater of the evaporation source can heat the opening efficiently; therefore, the evaporation material with which the opening is filled is evaporated; therefore, the blockage can be dissolved. Thereafter, the crucible is moved above and heated to carry out evaporation. It is possible to carry out film deposition without exposure to the atmosphere for a long stretch of time, which can improve the productivity of an organic EL element.

Abstract: A clamping mechanism for a semiconductor substrate includes: a C-shaped pickup plate; a susceptor top plate having a periphery adapted to receive and support an inner periphery portion of the C-shaped pickup plate thereon; and a clamp comprising (i) a top ring portion for clamping the substrate by sandwiching a periphery of the substrate between the top ring portion and the susceptor top plate and (ii) a pickup plate supporting portion adapted to support an outer periphery portion of the C-shaped pickup plate, wherein the C-shaped pickup plate is movable between the top ring portion and the pickup plate supporting portion, and the clamp is movable upward together with the C-shaped pickup plate and the susceptor top plate.

Abstract: A plasma processing apparatus that enables formation of a deposit film on a surface of a grounding electrode to be prevented. A substrate processing chamber has therein a processing space in which plasma processing is carried out on a substrate, an RF electrode that applies radio frequency electrical power into the processing space, a DC electrode that applies a DC voltage into the processing space, and a grounding electrode at least part of which is exposed in the substrate processing chamber. The grounding electrode is disposed in a corner portion formed through intersection of a plurality of internal surfaces in the substrate processing chamber.

Abstract: A substrate processing system includes a source unit configured to supply a deposition material to a substrate, a substrate holder configured to hold a substrate to receive the deposition material, a shadow mask comprising a frame that includes two opposing arms; and a crossbar configured to be mounted to the two opposing arms. The frame and the crossbar define a plurality of openings that allow the deposition material supplied by the source unit to be deposited on the substrate. A transport mechanism can produce relative movement between the shadow mask and the substrate.

Abstract: The invention relates to a vacuum pumping circuit comprising: an upper chamber (34) and a lower chamber (36) that communicate via a connecting orifice (38), and comprising a valve (40) provided with a stem guided so as to slide along a vertical axis (A1) in order to close the connecting orifice (38), which circuit is characterized in that the valve stem (48) is provided with a section forming a piston (52) which constitutes the mobile upper wall of a control chamber (54) communicating with the upper chamber (34), the piston (52) having an upper face (56) at atmospheric air pressure and a lower face (58) on which the pressure is that present in the control chamber (54).

Abstract: A gas-permeable plasma electrode has an electrically conductive container with a base which has a hole, and a gas-permeable porous electrically conductive film, with the gas-permeable porous electrically conductive film being arranged opposite the base in the electrically conductive container and being connected to the electrically conductive container, and with the gas-permeable porous electrically conductive film having at least one layer of electrically conductive grains, at least some of which are arranged so as to form a gas-permeable film.

Abstract: A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode and a second electrode are disposed opposite each other. The second electrode includes a plurality of conductive segments separated from each other and facing the first electrode. An RF power supply is configured to apply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma by the RF electric field. A DC power supply is configured to apply a DC voltage to at least one of the segments of the second electrode.

Abstract: A compensation plate used in a film coating device includes a main body defining a plurality of guiding holes, a plurality of moveable blades connected to the main body, and a plurality of connectors. Each of the plurality of moveable blades defines two through holes corresponding to one of the plurality of guiding holes. The plurality of connectors engage in the through holes and the guiding holes, fix each of the plurality of moveable blades to the main body when each of the plurality of connectors is fastened, and slide in each of the plurality of guiding holes with each of the moveable blades when each of the plurality of connectors releases.

Abstract: A substrate processing apparatus that can reliably improve the efficiency of heat transfer between a focus ring and a mounting stage. A housing chamber with the interior thereof evacuated houses a substrate. The substrate is mounted on a mounting stage that is disposed in the housing chamber. An annular focus ring is mounted on the mounting stage such as to surround a peripheral portion of the mounted substrate. A heat transfer film is formed on a surface of the focus ring which contacts the mounting stage by printing processing.

Abstract: A ring-shaped component for use in a plasma processing includes an inner ring-shaped member provided to surround an outer periphery of a substrate to be subjected to the plasma processing and an outer ring-shaped member provided to surround an outer periphery of the inner ring-shaped member. The outer ring-shaped member has a first surface facing a processing space side and a second surface facing an opposite side of the plasma generation side. The second surface has thereon one or more ring-shaped grooves.

Abstract: A magnetron plasma processing apparatus has a baffle plate interposed between a processing space and a gas exhaust port so as to confine a plasma in the processing space in a processing chamber. The baffle plate has through holes allowing the processing space and the gas exhaust port to communicate with each other. The baffle plate is provided along lines of magnetic force of a magnetic field at a position where the plate is located.

Abstract: An inner electrode for barrier film formation is an inner electrode for barrier film formation that is inserted inside a plastic container having an opening, supplies a medium gas to the inside of the plastic container, and supplies high frequency power to an outer electrode arranged outside the plastic container, thereby generating discharge plasma on the inner surface of the plastic container to form a barrier film on the inner surface of the plastic container, and that is provided with a gas supply pipe (101) having a gas flow path (101a) to supply a medium gas (G) and an insulating member (103) screwed into an end portion of the gas supply pipe (101) to be flush therewith and having a gas outlet (102) communicated with the gas flow path (101a).

Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

Abstract: Rotary pressure distributor for a carousel-type hollow-body treatment machine, comprising several treatment stations, this distributor comprising two coaxial rings (2, 3) in sealed contact, one of them (3) a rotary ring comprising communication orifices (6) connected to at least one treatment station and the other (2) stationary and comprising several slots (7) connected to a pressure source of the machine, these orifices and slots being distributed over several concentric circumferences (9) of different diameters; the orifices and/or the slots positioned on the different diameters have anterior and posterior ends (11, 12) shaped in such a way that as the orifices slide past the respective slots, the rates at which the surface area of the passage (13) defined by each orifice and the associated slot increase upon opening and decrease upon closing are substantially the same over all the circumferences.

Abstract: An apparatus for coating an areal substrate, for example a rectangular plate comprises a vaporizer source and a distributor system for the supply of vaporized material onto the substrate. The distributor system comprises a line source, with this line source and the substrate is movable relative to one another. The apparatus serves preferably for the production of flat screens with organic light-emitting diodes.

Abstract: Apparatus and method for compounding carbon nanotubes are provided to uniformly supply a source gas used to compound carbon nanotubes, efficiently exhaust the source gas, and increase a retrieve rate of the carbon nanotubes. According to the apparatus and method, carbon nanotubes are massively compounded.

Abstract: A substrate holder (20) for supporting a substrate (30). A heating component (50) is positioned adjacent to a supporting surface and between the supporting surface and a cooling component (60). A fluid gap is positioned between the cooling component and the heating component, the fluid gap configured to receive a fluid to increase thermal conduction between the cooling component and the heating component. A brazing material is disposed between the cooling component and the heating component, the brazing material disposed adjacent to the fluid gap.