Abstract: An optical system includes an illumination optical unit configured to guide illumination radiation along a path to an object plane. The illumination optical unit includes comprising a first facet mirror; a second facet mirror disposed downstream of the first facet mirror along the path; and a condenser mirror. The optical system also includes a projection optical unit configured to image a first article in the object plane onto a second article in an image plane. The image plane is a first distance from the object plane. The condenser mirror a second distance from the object plane.

Abstract: The invention provides a pneumatic support device for a lithographic apparatus and a lithographic apparatus with such support device. The support device comprises a gas spring. The gas spring comprises a suspending part, a suspended part, and a pressure chamber configured for supporting the suspended part relative to the suspending part. The support device further comprises an actuator configured for positioning the suspended part relative to the suspending part, an acceleration sensor configured for generating a first sensor signal representative for the acceleration of the suspending part, a pressure sensor configured for generating a second sensor signal representative for the pressure in the pressure chamber, and a control unit.

Abstract: A lithographic apparatus includes a number of sensors for measuring positions of features on a substrate prior to applying a pattern. Each sensor includes an imaging optical system. Position measurements are extracted from pixel data supplied by an image detector in each sensor. The imaging optical system includes one or more light field modulating elements and the processor processes the pixel data as a light-field image to extract the position measurements. The data processor may derive from each light-field image a focused image of a feature on the substrate, measuring positions of several features simultaneously, even though the substrate is not at the same level below all the sensors. The processor can also include corrections to reduce depth dependency of an apparent position of the feature include a viewpoint correction. The data processor can also derive measurements of heights of features on the substrate.

Abstract: An actuator for an optic mount in a vacuum environment includes a bellows around an actuator compartment. The bellows provides a seal around the actuator. A filter assembly is positioned between the actuator compartment and an interior of a vacuum chamber. The filter assembly includes a first particle filter, a second particle filter, and a purifier medium between the first particle filter and the second particle filter. Vacuum conditions in the actuator compartment can be achieved with a pump for the vacuum chamber, but particles and contaminants from the actuator or actuator compartment are captured by the filter assembly.

Abstract: A lithographic apparatus is used to manufacture a plurality of devices on a substrate. A height map is obtained representing a topographical variation across the substrate. Using the height map the apparatus controls imaging of a field pattern at multiple field locations across the substrate. The field pattern includes a plurality of individual device areas. For field locations near the substrate's edge, the height map data is used selectively so as to ignore topographical variations in one or more individual device areas. Whether a device area is to be ignored is determined at least partly based on the height map data obtained for the current exposure. Alternatively or in addition, the selection can be based on measurements made at the corresponding device area and field location on one or more prior substrates, and/or on the same substrate in a previous layer.

Abstract: A method of performance testing working parameters of a fluid handing structure in an immersion lithographic apparatus, the method including: placing a test substrate having an upper surface with a first portion with a resist defining the upper surface and a second portion with a material different from the resist defining the rest of the upper surface on a table in the immersion lithographic apparatus, confining liquid on a region of an upper surface of the table and/or the upper surface of the test substrate by operating the fluid handing structure using the associated working parameters, moving the table such that the region moves from the second portion to the first portion, and detecting change to and/or residue on the first portion as a result of liquid being left behind on the first portion during the moving.

Abstract: An apparatus for treating a substrate using a process gas includes a chamber having a treatment space defined therein, a substrate support unit for supporting the substrate in the treatment space, a gas supply pipe disposed in a ceiling surface of the chamber for supplying the process gas to the treatment space, and an exhaust unit for exhausting the process gas in the treatment space, wherein the exhaust unit includes an exhaust plate having an exhaust hole defined therein through which the process gas is exhausted, and an adjustment plate overlapping the exhaust plate, wherein the adjustment plate is constructed to control an opened amount of the exhaust hole when viewed from above.

Abstract: A fluid handling structure for a lithographic apparatus is disclosed. The fluid handling structure has a plurality of openings arranged in plan, in a line. The fluid handling structure is configured such that the openings are directed, in use, towards a facing surface, the facing surface being a substrate and/or a substrate table. The substrate table is configured to support the substrate. Outward of the line of openings is a damper. The damper may have a width that varies along the line of openings. The damper width is defined between the line of openings and an opposing damper edge.

Abstract: A lithographic apparatus has an object, the object includes: a substrate and optionally a lower layer on the substrate; an upper layer; and an intermediate layer between the upper layer and the substrate, wherein a bond strength between the intermediate layer and the substrate or lower layer is greater than a bond strength between the intermediate layer and the upper layer and the intermediate layer has a Young's Modulus and/or a Poisson ratio within 20% of that of the upper layer.

Abstract: An optical system transfers original structure portions (13) of a lithography mask (10), which have an x/y-aspect ratio of greater than 4:1, and are aligned on the lithography mask, separated respectively by separating portions (14) that carry no structures to be imaged. The optical system transfers the original structure portions onto image portions (31) of a substrate (26). Each of the original structure portions is transferred to a separate image portion. The image portions onto which the original structure portions are transferred are arranged in a line next to one another. An associated projection optical unit may have an anamorphic embodiment with different imaging scales for two mutually perpendicular field coordinates specifically, one that is reducing for one of the field coordinates and the other is magnifying for the other field coordinates.

Abstract: Metrology targets, design methods and measurement methods thereof are provided with periodic structure(s) which are oblique with respect to orthogonal production axes X and Y of the lithography tool—enabling more accurate overlay measurements of devices having diagonal (oblique, tilted) elements such as DRAM devices. One or more oblique periodic structure(s) may be used to provide one- or two-dimensional signals, with respect to one or more layers, possibly providing overlay measurements for multiple steps applied to one layer. The oblique periodic structure(s) may be used to modify current metrology target designs (e.g., imaging targets and/or scatterometry targets) or to design new targets, and measurement algorithms may be adjusted respectively to derive signals from the oblique periodic structure(s) and/or to provide pre-processed images thereof. The disclosed targets are process compatible and reflect more accurately the device overlays with respect to various process steps.

Abstract: A method of adjusting a layout pattern includes shifting or rotating an entire layout pattern based on information of a plurality of defects of a mask-blank to avoid an impact of first defects of the plurality of defects when the layout pattern is produced as a mask on the mask-blank. The method includes adjusting the layout pattern of the mask at a first location based on information of a second defect of a remaining of the plurality of defects to reduce an impact of the second defect when the layout pattern in projected on a wafer. The method also includes adjusting the layout pattern of the mask at a second location based on information of a third defect of the remaining of the plurality of defects and distinct from the second defect to shift an impact position of the third defect when the layout pattern in projected on the wafer.

Abstract: A method includes forming a first overlay feature in a first dielectric layer over a first wafer; forming a second dielectric layer over the first overlay feature and the first dielectric layer; forming an opening in the second dielectric layer by at least using an exposure tool; forming a second overlay feature in the opening of the second dielectric layer, such that a first edge of the first overlay feature is covered by the second dielectric layer; directing an electron beam to the first and second overlay features and the second dielectric layer; detecting the electron beam reflected from the first overlay feature through the second dielectric layer and from the second overlay feature by a detector; obtaining, by a controller, an overlay error between the first overlay feature and the second overlay feature according to the reflected electron beam electrically connected to the detector.

Abstract: A method of manufacturing an integrated circuit (IC) device includes forming a photoresist layer on a substrate, and exposing the photoresist layer to light by using a photolithographic apparatus including a light generator. The light generator includes a chamber having a plasma generation space, an optical element in the chamber, and a debris shielding assembly between the optical element and the plasma generation space in the chamber, and the debris shielding assembly includes a protective film facing the optical element and being spaced apart from the optical element with a protective space therebetween, the protective space including an optical path, and a protective frame to support the protective film and to shield the protective space from the plasma generation space.

Abstract: The invention relates to a device and a method for characterizing a microlithographic mask. A device according to the invention has an illumination optical unit for illuminating structures of a mask intended for use in a lithography process in a microlithographic projection exposure apparatus, a detector unit, and an evaluation unit for evaluating the data recorded by the detector unit, wherein the detector unit is configured for the spatially resolved determination of both the intensity and the polarization state of the respectively impinging light emanating from the mask.

Abstract: A cost-effective method for repairing reflective optical elements for EUV lithography. These optical elements (60) have a substrate (61) and a coating (62) that reflects at a working wavelength in the range between 5 nm and 20 nm and is damaged as a result of formation of hydrogen bubbles. The method includes: localizing a damaged area (63, 64, 65, 66) in the coating (62) and covering the damaged area (63, 64, 65, 66) with one or more materials having low hydrogen permeability by applying a cover element to the damaged area. The cover element is formed of a surface structure, a convex or concave surface, or a coating corresponding to the coating of the reflective optical element, or a combination thereof. The method is particularly suitable for collector mirrors (70) for EUV lithography. After the repair, the optical elements have cover elements (71, 72, 73).

Abstract: A technique to generate predicted data for control or monitoring of a production process to improve a parameter of interest. Context data associated with operation of the production process is obtained. Metrology/testing is performed on the product of the production process, thereby obtaining performance data. A context-to-performance model is provided to generate predicted performance data based on labeling of the context data with performance data. This is an instance of semi-supervised learning. The context-to-performance model may include the learner that performs semi-supervised labeling. The context-to-performance model is modified using prediction information related to quality of the context data and/or performance data. Prediction information may include relevance information relating to relevance of the obtained context data and/or obtained performance data to the parameter of interest.

Abstract: Extreme ultra-violet (EUV) lithography ruling engine specifically configured to print one-dimensional lines on a target workpiece includes source of EUV radiation; a pattern-source defining 1D pattern; an illumination unit (IU) configured to irradiate the pattern-source; and projection optics (PO) configured to optically image, with a reduction factor N>1, the 1D pattern on image surface that is optically-conjugate to the 1D pattern. Irradiation of the pattern-source can be on-axis or off-axis. While 1D pattern has first spatial frequency, its optical image has second spatial frequency that is at least twice the first spatial frequency. The pattern-source can be flat or curved. The IU may include a relay reflector. A PO's reflector may include multiple spatially-distinct reflecting elements aggregately forming such reflector. The engine is configured to not allow formation of optical image of any 2D pattern that has spatial resolution substantially equal to a pitch of the 1D pattern of the pattern-source.

Abstract: Disclosed is a method and associated inspection apparatus for detecting variations on a surface of a substrate. The method comprises providing patterned inspection radiation to a surface of a substrate. The inspection radiation is patterned such that an amplitude of a corresponding enhanced field is modulated in a manner corresponding to the patterned inspection radiation. The scattered radiation resultant from interaction between the enhanced field and the substrate surface is received and variations on the surface of the substrate are detected based on the interaction between the enhanced field and the substrate surface. Also disclosed is a method of detecting any changes to at least one characteristic of received radiation, the said changes being induced by the generation of a surface plasmon at said surface of the optical element.

Abstract: In an exposure apparatus, on a substrate holder (34), a plurality of grating areas (RG) is arranged mutually apart in the X-axis direction, and a plurality of heads (66a to 66d) that irradiates a measurement beam with respect to the grating area and can move in the Y-axis direction is arranged outside of the substrate holder. A control system controls movement of the substrate holder in at least directions of three degrees of freedom within an XY plane, based on measurement information of at least three heads of the plurality of heads facing the grating area and measurement information of a measurement device that measures position information of the plurality of heads. The measurement beam of each of the plurality of heads, during the movement of substrate holder in the X-axis direction, moves off of one of the plurality of grating areas and switches to another adjacent grating area.