Abstract: According to aspects of the embodiments, there is provided an apparatus and method for driving a laser imaging module (LIM) that includes an adjustment current to have all laser diodes emitting the same amount of output so that the diodes can be connected in series on a single high current power source. Fine tuning can be done by a dedicated low current controllable power source connected directly to each laser diode. A series connected LIM uses only two heavy gauge wires so total power loss and heat stress on the LIM and module drawer connectors will be significantly reduced. Additional fine tuning can include an electronic gate so that individual diodes could be quickly turned off independently from each other.

Abstract: An apparatus (10) for increasing a pulse length of a pulsed radiation beam, the apparatus comprising: a beam splitter (16) configured to split an input radiation beam (18) into a first beam (24) and a second beam (22); an optical arrangement (12, 14), wherein the beam splitter and the optical arrangement are configured such that at least a portion of the first beam is recombined with the second beam into a modified beam after an optical delay of the first beam caused by the optical arrangement; and at least one optical element (30) in an optical path of the first beam, the at least one optical element configured such that the phase of different parts of a wavefront of the first beam is varied to reduce coherence between the first beam and the second beam.

Abstract: An apparatus for reducing hydrogen permeation of a mask is provided when generating extreme ultraviolet (EUV) radiation. The apparatus includes a mask stage configured to hold the mask, a hydrogen dispensing nozzle configured to eject hydrogen below the mask, and a trajectory correcting assembly. The trajectory correcting assembly includes a correcting nozzle and a gas flow detector. The correcting nozzle is configured to dispense at least one flow adjusting gas to adjust a trajectory of the hydrogen away from the mask to reduce hydrogen permeation at an edge of the mask. The gas flow detector is configured to measure a variation of an airflow of the hydrogen adjusted by the at least one flow adjusting gas.

Abstract: Methods for calibrating metrology apparatuses and determining a parameter of interest are disclosed. In one arrangement, training data is provided that comprises detected representations of scattered radiation detected by each of plural metrology apparatuses. An encoder encodes each detected representation to provide an encoded representation, and a decoder generates a synthetic detected representation from the respective encoded representation. A classifier estimates from which metrology apparatus originates each encoded representation or each synthetic detected representation. The training data is used to simultaneously perform, in an adversarial relationship relative to each other, a first machine learning process involving the encoder or decoder and a second machine learning process involving the classifier.

Abstract: A detection system for an alignment sensor, and an alignment sensor and lithographic projection apparatus comprising such a detection system is disclosed. The detection system comprises at least one detection circuit; and a plurality of optical fiber cores for transporting a measurement signal to the at least one detection circuit. At least as subset of the plurality of optical fiber cores are selectively switchable between a detection state and a non-detection state, thereby defining a configurable detection spot.

Abstract: An imprint lithography method of configuring an optical layer includes selecting one or more parameters of a nanolayer to be applied to a substrate for changing an effective refractive index of the substrate and imprinting the nanolayer on the substrate to change the effective refractive index of the substrate such that a relative amount of light transmittable through the substrate is changed by a selected amount.

Abstract: An extreme ultraviolet light generation system may include a laser device configured to emit pulse laser light, an EUV light concentrating mirror configured to reflect and concentrate extreme ultraviolet light generated by irradiating a target with the pulse laser light, and a processor configured to receive a first energy parameter of the extreme ultraviolet light and control an irradiation frequency of the pulse laser light with which the target is irradiated so that change in a second energy parameter related to energy per unit time of the extreme ultraviolet light reflected by the EUV light concentrating mirror is suppressed.

Abstract: An apparatus for reducing hydrogen permeation of a mask is provided when generating extreme ultraviolet (EUV) radiation. The apparatus includes a mask stage configured to hold the mask, a hydrogen dispensing nozzle configured to eject hydrogen below the mask, and a trajectory correcting assembly. The trajectory correcting assembly includes a correcting nozzle and a gas flow detector. The correcting nozzle is configured to dispense at least one flow adjusting gas to adjust a trajectory of the hydrogen away from the mask to reduce hydrogen permeation at an edge of the mask. The gas flow detector is configured to measure a variation of an airflow of the hydrogen adjusted by the at least one flow adjusting gas.

Abstract: Embodiments of a drain in a lithographic projection apparatus are described that have, for example, a feature which reduces inflow of gas into the drain during a period when no liquid is present in the drain. In one example, a passive liquid removal mechanism is provided such that the pressure of gas in the drain is equal to the ambient gas pressure and in another embodiment a flap is provided to close off a chamber during times when no liquid needs removing.

Abstract: A light receiving element array includes one or more unit element blocks. Each of the unit element blocks includes different light receiving elements with different element structures.

Abstract: Aspects of the present disclosure provide an imaging system. For example, in the imaging system a first light source can generate a first light beam of a first wavelength, a second light source can generate a second light beam of a second wavelength, the second light beam having power sufficient to pass through at least a portion of a thickness of a wafer, an alignment module can coaxially align the second light beam with the first light beam, a coaxial module can focus the coaxially aligned first and second light beams onto a first pattern located on a front side of the wafer and a second pattern located below the first pattern, respectively, and an image capturing module can capture a first image of the first pattern and a second image of the second pattern. The second image can be captured via quantum tunneling imaging or infrared (IR) transmission imaging.

Abstract: Methods and apparatus for determining a subset of a plurality of relationships between a plurality of parameters describing operation of a lithographic apparatus, the method comprising: determining a first set of data describing first relationships between a plurality of parameters of a reference apparatus; based on one or more measurements, determining a second set of data describing second relationships between the plurality of parameters of the reference or a further apparatus; comparing the first set of data and the second set of data; and selecting from the second set of data a subset of the second relationships based on differences between the first set of data and the second set of data.

Abstract: A method of optimizing an apparatus for multi-stage processing of product units such as wafers, the method includes: receiving object data representing one or more parameters measured across the product units and associated with different stages of processing of the product units; and determining fingerprints of variation of the object data across the product units, the fingerprints being associated with different respective stages of processing of the product units. The fingerprints may be determined by decomposing the object data into components using principal component analysis for each different respective stage; analyzing commonality of the fingerprints through the different stages to produce commonality results; and optimizing an apparatus for processing product units based on the commonality results.

Abstract: A maskless, extreme ultraviolet (EUV) lithography scanner uses an array of microlenses, such as binary-optic, zone-plate lenses, to focus EUV radiation onto an array of focus spots (e.g. about 2 million spots), which are imaged through projection optics (e.g., two EUV mirrors) onto a writing surface (e.g., at 6× reduction, numerical aperture 0.55). The surface is scanned while the spots are modulated to form a high-resolution, digitally synthesized exposure image. The projection system includes a diffractive mirror, which operates in combination with the microlenses to achieve point imaging performance substantially free of geometric and chromatic aberration. Similarly, a holographic EUV lithography stepper can use a diffractive photomask in conjunction with a diffractive projection mirror to achieve substantially aberration-free, full-field imaging performance for high-throughput, mask-projection lithography. Maskless and holographic EUV lithography can both be implemented at the industry-standard 13.

Abstract: A method of manufacturing a mask may include identifying an error pattern of final patterns formed on a substrate, correcting a first target pattern on the basis of the error pattern, fracturing a first mask layout into a plurality of first segments on the basis of the corrected first target pattern, and correcting the first mask layout by biasing a plurality of first target segments corresponding to a first final target among the plurality of segments. The first mask layout may include a first extension pattern, final targets disposed in zigzags, and the first final target corresponding to the error pattern, and each of the plurality of first segments may corresponds to one of the final targets.

Abstract: Embodiments disclosed herein include a lithographic patterning system and methods of using such a system to form a microelectronic device. The lithographic patterning system includes an actinic radiation source, a stage having a surface for supporting a substrate with a resist layer, and a prism with a first surface over the stage, where the first surface has a masked layer and is substantially parallel to the surface of the stage. The prism may have a second surface that is substantially parallel to the first surface. The first and second surfaces are flat surfaces. The prism is a monolithic prism-mask, where an optical path passes through the system and exits the first surface of the prism through the mask layer. The system may include a layer disposed between the mask and resist layers. The mask layer of the prism may pattern the resist layer without an isolated mask layer.

Abstract: According to one embodiment, a pattern forming method includes forming a resist film including a first core material pattern and a second core material pattern, on a first film laminated on a substrate; forming a second film at least on sidewalls of the first and second core material patterns; removing the first core material pattern while not removing the second core material pattern and the second film; and processing the first film by using, as a mask, the second core material pattern and the second film.

Abstract: The present invention provides an exposure apparatus that exposes a substrate, comprising: an optical system configured to emit, in a first direction, light for exposing the substrate; a first supplier configured to supply a gas into a chamber where the optical system is arranged; and a second supplier configured to supply a gas to an optical path space where the light from the optical system passes through, wherein the second supplier includes a gas blower including a blowing port from which a gas is blown out in a second direction, and the guide member configured to guide the gas blown out from the blowing port to the optical path space, and the guide member includes a plate member extended on a side of the first direction of the blowing port so as to be arranged along the second direction.

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a photoresist layer over a substrate; performing an infiltration process to introduce a metallic compound into the photoresist to enhance a sensitivity of the photoresist layer to an extreme ultraviolet (EUV) radiation; performing an exposing process to the photoresist layer using the EUV radiation; and performing a developing process to the photoresist layer to form a patterned resist layer.

Abstract: Proposed are a processing solution for reducing the incidence of pattern collapse and the number of defects in a photoresist pattern including polyhydroxystyrene using extreme ultraviolet rays as an exposure source, and a method of forming a pattern using the same. The processing solution for reducing the incidence of photoresist pattern collapse and the number of defects includes 0.0001 to 1 wt % of an alkaline material, 0.0001 to 1 wt % of an anionic surfactant, and 98 to 99.9998 wt % of water.