Abstract: The present invention relates to the fabrication of diaphragm pressure sensors utilizing silicon-on-insulator technology where recrystallized silicon forms a diaphragm which incorporates electronic devices used in monitoring pressure. The diaphragm is alternatively comprised of a silicon nitride having the necessary mechanical properties with a recrystallized silicon layer positioned thereon to provide sensor electronics.

Abstract: The invention is directed to a method of manufacture of multilayer electrical components, especially capacitors, and components made by such a method. High capacitance dielectric materials and low cost metallizations layered with such dielectrics may be fabricated as multilayer electrical components by sintering the metallizations and the dielectrics during the fabrication process by application of microwave radiation.

Abstract: A de-icer for a structural member of an aircraft is provided. The de-icer includes first and second heaters having first and second electrically conductive strips, respectively. The first and second conductive strips are configured to form first and second marginal portions, respectively. The first and second heaters are positioned relative to each other such that the marginal portions are overlapped.

Abstract: A ferroelectric capacitive element according to the present invention includes a substrate constituted by a silicon oxide, glass, or the like, an adhesive layer of Ti or the like formed on the substrate, a lower electrode formed on the adhesive layer and constituted by any one of Pt, Pd, Ag, Au and the like, a ferroelectric film 14 formed on the lower electrode, a conductive oxide film formed on the ferroelectric film, and an upper electrode formed on the conductive oxide film and constituted by a metallic material other than precious metal, such as Al, Al alloy, AlSi, AlNi, Ni alloy, Cu alloy, AlCu.

Abstract: A printed circuit board includes a planar first outer layer, a planar second outer layer, and a planar capacitive power distribution core disposed between the first and second outer layers. The capacitive core is formed from first and second electrically conductive layers with a dielectric layer disposed therebetween. The dielectric layer is made from a high dielectric constant material such as a ceramic in the form of a perforated sheet. The perforations permit the electrically conductive layers to be bound to the dielectric layer without significantly increasing the separation between the conductive layers. Each perforation allows a column of adhesive to collect therein to bond the power distribution core together. The resulting capacitance is typically sufficient to eliminate the need for decoupling capacitors.

Abstract: In a rotor which is rotated for adjusting capacitance provided by a variable capacitor, a portion for receiving a tool for rotating the same is defined by a through-hole. Thus, it is possible to protect the rotor from application of a pressing force from the tool, thereby suppressing change of a clearance between the rotor and a stator. Consequently, it is possible to stabilize the capacitance as the capacitor is being adjusted, as well as to reduce setting drift that causes the capacitance as adjusted disadvantageously to change when the tool is separated from the rotor.

Abstract: A solid electrolytic capacitor includes an anode, a dielectric layer, two conductive polymer compound layers, and a cathode electrode. The anode consists of a valve metal and has a lead extending therefrom. The dielectric layer is formed by oxidizing a surface of the anode. The two conductive polymer compound layers are formed on the dielectric layer and respectively consist of solid electrolytes, at least one of the two conductive polymer compound layers consisting of a conductive polymer compound chemically oxidized and polymerized using an oxidant. The cathode electrode is formed on the two conductive polymer compound layers. A method of manufacturing this capacitor is also disclosed.

Abstract: An area array interconnect device (such as of the TAB type) has a plurality of input/output (I/O) leads for connection to an electronic device such as an IC. The interconnect device also has arrays of lead lines in areas remote from the I/O leads, e.g., central or internal areas, which are connected by vias to ground and/or power pads on corresponding areas of the electronic device.

Abstract: This invention relates to an electrolyte for use in electrolytic capacitors and also to an electrolytic capacitor using the electrolyte. The solute for the electrolyte is a quaternary ammonium salt of either a carboxylic acid selected from the group consisting of phthalic acid, tetrahydrophthalic acid, hexahydrophthalic acid and maleic acid, or an alkyl or nitro-substituted compound of the acid. The electrolytic capacitor has improved low temperature characteristics and an improved variation in characteristics at high temperatures in relation to time with a prolonged life.

Abstract: A multi-layer capacitor comprising a stack of sheet electrodes with an insulating dielectric layer sandwiched between these layers is disclosed. The dielectric layer formed on the electrode is prepared by the "sol-gel" process.

Abstract: A solid-state electrolytic capacitor reduces the possibility of failure due to increasing of a leakage current during application of voltage for a long period and thus improves reliability. The solid-state electrolytic capacitor has a conductive high polymeric compound deposited on a dielectric oxidation layer covering the surface of pore in a tantalum plate while maintaining voids. The void surface acts as an oxygen supply source.

Abstract: A semiconductor device and process for making the same are disclosed which incorporate a relatively large percentage of holmium dopant (0.5 to 5%) into a BST dielectric film 24 with small grain size (e.g. 10 nm to 50 nm). Dielectric film 24 is preferably disposed between electrodes 18 and 26 (which preferably have a Pt layer contacting the BST) to form a capacitive structure with a relatively high dielectric constant and relatively low leakage current. Apparently, properties of the thin film deposition and small grain size, including temperatures well below bulk BST sintering temperatures, allow the film to support markedly higher defect concentrations without holmium precipitation than are observed for bulk BST. For holmium doping levels generally between 0.5 and 5% (compensated with titanium and/or manganese), better than 50% improvement in dielectric constant and two to six orders of magnitude reduction in leakage current (compared to undoped BST) have been observed for such films.

Abstract: An electric double layer capacitor includes a pair of opposing polarized electrodes, a separator, a pair of external electrodes, and an insulating molding case. The pair of opposing polarized electrodes consist of activated carbon. The separator has characteristics which allow the separator to transmit ions but not to transmit electrons, and isolates the polarized electrodes from each other. The separator has an uneven shape for increasing a surface area of the separator. Each of the pair of external electrodes has one terminal electrically connected to a corresponding one of the polarized electrodes. The insulating molding case externally extracts the other terminal of each of the external electrodes to accommodate the polarized electrodes together with an electrolytic solution.

Abstract: A composition for an intergranular insulation type semiconductive ceramic capacitor essentially consisting of 1 mole of SrTiO.sub.3, 0.005 mole to 0.012 mole of TiO.sub.2, and 0.003 mole to 0.006 mole of a quinquevalent ion oxide selected from a group consisting of Nb.sub.2 O.sub.5, Ta.sub.2 O.sub.5, Sb.sub.2 O.sub.5 and the mixture thereof. An intergranular insulation type semiconductive ceramic capacitor is made by sintering a ceramic body made of the composition at a temperature of not less than 1,500.degree. C. in the atmosphere, to form a sintered body having a liquid phase at its grain boundaries, and cooling the sintered body so that the liquid phase forms an intergranular insulating layer. The intergranular insulation type semiconductive ceramic capacitor exhibits a dielectric constant of not less than 40,000 and an insulation resistance of not less than 10.sup.9 .OMEGA..

Abstract: A capacitor structure for a memory element of an integrated circuit is provided. The capacitor is formed within a via hole defined through a first dielectric layer, and comprises a bottom electrode defined by an underlying conductive layer, and a capacitor dielectric filling the via with a dielectric barrier layer lining the via and separating the capacitor dielectric from the first dielectric layer. The capacitor dielectric is characterized by a material with high dielectric strength, preferably a ferroelectric material. An overlying conductive layer defines a top electrode contacting the capacitor dielectric. The barrier layer may comprise dielectric sidewall spacer formed within the via, or alternatively may comprise a region of mixed composition formed by interdiffusion of the first dielectric layer and the capacitor dielectric. The resulting capacitor structure is simple and compact, and may be fabricated with known CMOS, Bipolar or Bipolar-CMOS processes for submicron VLSI and ULSI integrated circuit.

Abstract: A flexible, electric heating pad having a self-limiting heating element is provided. The heating element includes a pair of relatively spaced conductors surrounded by a positive temperature coefficient (PTC) material. A layer of electrically insulating material surrounds the PTC material. The PTC material includes a polyolefin resin having a relatively low flexural modulus. The heating element is disposed in a generally serpentine configuration within passages formed in the covering material of the heating pad. The passages are formed by joining together layers of covering material using ultrasonic welding or other suitable ways. The temperature of the heating element is controlled using controller circuit which utilizes a solid state timed interval control circuit. A safety circuit is provided for non-resettably disconnecting electrical power from the heating element if short or open circuit conditions occur therein.

Abstract: A display glazing which is fitted to a refrigerated display case and which prevents moisture condensation thereon, comprising a shaped glazing having at least a portion of one side thereof provided with a low emissivity coating, conductive current input strips placed on the glazing in contact with the low emissivity coating which define coated zones of the glazing which are heated by the Joule effect upon the passage of electrical current between the conductive strips, and a means for determining if atmospheric conditions are such that condensed moisture is likely to form on the exterior surface of the unheated glazing.

Abstract: A chip type capacitor with a multi-layer structure comprising a plurality of inner electrodes classified into two groups one being used as parts of signal lines and the other being connected to grounded lines. Each of the inner electrodes for radio frequency passages has a pair of inwardly extending recesses adapted to make current flows generated in the inner electrode by radio frequency noise be opposite to each other. Each of at least two grounded inner electrode pairs is interposed between vertically adjacent inner electrodes used as parts of signal lines. The inner electrodes of each pair are connected to ground terminals, respectively, and have a shape formed by removing one protruded grounding portion from a cross shape.

Abstract: A silicon capacitive pressure sensor is disclosed that has a glass dielectric material sputter-deposited onto a silicon substrate of the sensor. After deposition of the bulk dielectric material, the glass is patterned and etched to form a pair of concentric rings. An inner ring is of a circular shape, while the outer ring is of an octagonal shape. As compared to prior art dielectric spacers which are of a single ring of relatively wide thickness, the pair of concentric rings disclosed herein significantly reduce the parasitic capacitance of the glass dielectric material, thereby increasing the sensitivity of the sensor.

Abstract: A process for producing capacitor grade powder, electrodes, and finished capacitors therefrom having reduced electrical leakage characteristics. The powder is prepared by reacting Group V-B base materials with quantities of between 500 to 7000 ppm of nitrogen and 700 to 3000 ppm of oxygen. Electrical leakage is reduced by at least 28% for electrodes anodized at 100 volts or greater in comparison with electrodes and finished capacitors made from undoped materials. A range of specific charge of up to 25,000 uFV/g is achieved for sintering temperatures of 1400.degree. C. to 1800.degree. C.