Abstract: Methods for cleaning polymeric microfiltration or ultrafiltration membranes. The membrane may be contacted with a first cleaning solution including at least one oxidising agent. A second cleaning solution including at least one reducing agent may then be introduced to the membrane and first cleaning solution. The oxidising and reducing agents may undergo a neutralisation reaction to form an oxidation-neutral mixed cleaning solution. The membrane may be simultaneously cleaned during the neutralisation reaction.

Abstract: A wafer chuck is cleaned using a cleaning cap to remove processing residue and particulate matter. The cleaning cap is configured to overlie and align with the wafer chuck and includes a base and a first roller connected to the base and having wound therearound a cleaning cloth. The cleaning cap further includes a second roller connected to the base and having attached thereto a free end of the cleaning cloth. During use, the cleaning cloth winds upon the second roller from the first roller when the second roller rotates about its axis. The cleaning cap can be positioned relative the wafer chuck by way of a manipulator to ensure the cleaning cloth contacts the wafer chuck with sufficient force. The cleaning cloth rubs the wafer chuck with both translational motion and rotational motion.

Abstract: A method for cleaning a photomask-related substrate, when the photomask-related substrate is contaminated by a sulfate ion. The photomask-related substrate is cleaned with pure water to remove the sulfate ion, and a deaerating step of removing dissolved gas is performed in advance on the pure water used for cleaning. When the substrate to be cleaned is cleaned by filtering the cleaning fluid with a filter for removing foreign matter and supplying the filtered cleaning fluid to the cleaning apparatus through a supply pipe, prior to a supply of the filtered cleaning fluid to the cleaning apparatus, the filtered cleaning fluid is discharged to the outside of a system through a discharge pipe, and then the filtered cleaning fluid is supplied to the cleaning apparatus through the supply pipe.

Abstract: An apparatus used for rapid removal of polymer films from plasma confinement rings while minimizing erosion of other plasma etch chamber components is disclosed. The apparatus includes a center assembly, an electrode plate, a confinement ring stack, a first plasma source, and a second plasma source. The electrode plate is affixed to a surface of the center assembly with a channel defined along the external circumference therein. A first plasma source is disposed within the channel and along the external circumference of the center assembly, wherein the first plasma source is configured to direct a plasma to the inner circumferential surface of the confinement ring stack. A second plasma source located away from the first plasma source is configured to perform processing operations on a substrate within the etch chamber.

Abstract: A device for clearing obstructions from a medical tube, such as a chest tube, is disclosed in various embodiments. The device features a clearance member in the form of a loop. The loop desirably has a diameter that substantially corresponds to the inner diameter of the medical tube. Also desirably, the loop presents a substantially unobstructed pathway therethrough for the flow of material from a location in the medical tube distal to the loop to a location in the medical tube proximal to the loop regardless whether the clearance member is being translated or is at rest in the medical tube. Methods of utilizing such a device are also disclosed.

Abstract: A vacuum exhaust method of a substrate processing apparatus, after opening to the atmosphere, depressurizes a vacuum processing chamber having therein a mounting table for mounting a target substrate thereon. The vacuum exhaust method includes covering a surface of the mounting table with a protection member; sealing the vacuum processing chamber; vacuum evacuating the sealed vacuum processing chamber; and adsorbing at least one of foreign substances and out-gases by the protection member.

Abstract: A cleaning device is provided, including a top portion, a middle portion, and a bottom portion. The top portion includes a first opening. The middle portion is connected to the top portion, and includes an inlet on a lateral side, an annular channel communicated with the inlet, and a second opening communicated with the first opening. The bottom portion is connected to the middle portion, and includes a reservoir and a third opening. The third opening communicates the second opening and the reservoir.

Abstract: A disclosed film deposition apparatus includes a susceptor provided rotatably in a chamber; a substrate receiving portion provided in one surface of the susceptor, for receiving a substrate; a reaction gas supplying member configured to supply a reaction gas to the one surface of the susceptor; a cleaning member including: a first concave member that is provided above the susceptor and open toward the one surface, thereby defining a space of an inverted concave shape, a second concave member provided over the first concave member to define a gas passage between the first concave member and the second concave member, a cleaning gas supplying portion configured to supply a cleaning gas to the space, and an evacuation pipe configured to be in gaseous communication with the gas passage and extend out from the chamber; and an evacuation opening provided in the chamber in order to evacuate the chamber.

Abstract: Method for crystal growth from a surfactant of a metal-nonmetal (MN) compound, including the procedures of providing a seed crystal, introducing atoms of a first metal to the seed crystal thus forming a thin liquid metal wetting layer on a surface of the seed crystal, setting a temperature of the seed crystal below a minimal temperature required for dissolving MN molecules in the wetting layer and above a melting point of the first metal, each one of the MN molecules being formed from an atom of a second metal and an atom of a first nonmetal, introducing the MN molecules which form an MN surfactant monolayer, thereby facilitating a formation of the wetting layer between the MN surfactant monolayer and the surface of the seed crystal, and regulating a thickness of the wetting layer, thereby growing an epitaxial layer of the MN compound on the seed crystal.

Abstract: Disclosed is a substrate processing apparatus capable of drying a substrate to be processed while suppressing a pattern collapse or occurrence of contamination. In a processing vessel, a substrate is immersed in a liquid in the longitudinal direction, and the liquid is pushed out by a substitution fluid of a supercritical state to be discharged from the processing vessel. Thereafter, the substitution fluid subjected to the substitution with the liquid is discharged from the processing vessel to depressurize the processing vessel, and the substitution fluid is changed from the supercritical state to a gaseous state to dry the substrate.

Abstract: Cleaning of a hot dip galvanized steel sheet is conducted by bringing a strip-shaped steel sheet which was treated by surface oxidation in advance into contact with a cleaning liquid for 1 second or more, and then bringing the hot dip galvanized steel sheet into contact with pure water, while continuously transferring the hot dip galvanized steel sheet. The method allows efficiently and fully washing off the acidic solution adhered to the surfaces of the hot dip galvanized steel sheet treated by surface oxidation. The invention also provides an apparatus for cleaning the hot dip galvanized steel sheet to carry out the above cleaning method.

Abstract: A plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode and a top edge electrode defined over the bottom edge electrode. The top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate. The chamber includes a gas feed defined through a top surface of the processing chamber. The gas feed introduces a processing gas for striking the cleaning plasma at a location in the processing chamber that is between an axis of the substrate and the top edge electrode. A pump out port is defined through the top surface of the chamber and the pump out port located along a center axis of the substrate. A method for cleaning a bevel edge of a substrate is also provided.

Abstract: A dishwasher (10) for the batch washing of wash items (20) comprises a wash chamber (24), which is arranged to accommodate wash items (20) and in which spray members ((34a-b)) for spraying out washing liquid and rinsing liquid are disposed; a wash tank (28), which is arranged to contain washing liquid which during a wash phase shall be supplied to the wash chamber (24) via the spray members ((34a-b)); a recirculating rinse tank (52), which is arranged to contain used rinsing liquid which during a rinse phase shall be supplied to the wash chamber (24) via the spray members ((34a-b)); members (62) for supplying final-rinse liquid which during a final-rinse phase shall be supplied to the wash chamber (24) via the spray members ((34a-b)); a collecting device (42, 46), which is arranged to collect liquid which has been sprayed out into the wash chamber (24) via the spray members ((34a-b)); and a pump (48), which is arranged to pump used rinsing liquid from the collecting device (42, 46) to the recirculating rinse

Abstract: Some embodiments include methods of removing particles from over surfaces of semiconductor substrates. Liquid may be flowed across the surfaces and the particles. While the liquid is flowing, electrophoresis and/or electroosmosis may be utilized to enhance transport of the particles from the surfaces and into the liquid. In some embodiments, temperature, pH and/or ionic strength within the liquid may be altered to assist in the removal of the particles from over the surfaces of the substrates.

Abstract: The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible 10 includes an opaque vitreous silica layer 11 provided on the outer surface side of the crucible and containing numerous bubbles, and a transparent vitreous silica layer 12 provided on the inner surface side. The opaque vitreous silica layer 11 includes a first opaque vitreous silica portion 11a provided on the crucible upper portion, and a second opaque vitreous silica portion 11b provided on the crucible lower portion. The specific gravity of the second opaque vitreous silica portion 11b is 1.7 to 2.1, and the specific gravity of the first opaque vitreous silica portion 11a is 1.4 to 1.8, and smaller than that of the second opaque vitreous silica portion.

Abstract: A method for controlling the operation of an automatic dishwasher including receiving input for a zonal wash cycle from a user interface to a controller indicating a selection of a first cleaning cycle corresponding to a first wash zone and a second cleaning cycle, different from the first cleaning cycle, corresponding to a second wash zone, and implementing a zonal wash cycle by implementing each of the first and second cleaning cycles during a single cycle of operation of the dishwasher to define the zonal wash cycle.

Abstract: A method for cleaning a surface of a plate-like article includes the steps of: treating the surface with free flow cleaning, wherein liquid is dispensed through a dispense nozzle onto the surface in a continuous liquid flow, and treating the surface with spray cleaning, wherein liquid is directed through a spray nozzle towards the surface in form of droplets. The surface is treated with a spray cleaning step before the free flow cleaning step and a spray cleaning step after the free flow cleaning step.

Abstract: Interior parts of gasoline engines are readily cleaned by a method comprising the steps of connecting an a cleaning liquid supply pipe having a gas supply port thereon airtightly to a port of an intake pipe of the engine below a throttle valve-attached position of the engine; operating the engine to draw cleaning liquid in the form of liquid drop and simultaneously drawing continuously a gas having an oxygen concentration of less than 20 vol. % into the intake pipe; and exhausting the cleaning liquid having been brought into contact with the internal parts of the engine with an exhaust gas.

Abstract: A method of treating a substrate comprises, in one aspect, placing a substrate having material on a surface thereof in a treatment chamber; directing a stream of a liquid treatment composition to impinge the substrate surface; and directing a stream of water vapor to impinge the substrate surface and/or to impinge the liquid treatment composition. A preferred aspect of this invention is the removal of materials, and preferably photoresist, from a substrate, wherein the treatment composition is a liquid sulfuric acid composition comprising sulfuric acid and/or its desiccating species and precursors.

Abstract: A substrate processing apparatus has an indexer block and a processing block. One side of the processing block has a vertical stack of a plurality of top surface cleaning units and the other side of the processing block has a vertical stack of a plurality of back surface cleaning units. Reversing units for reversing the substrate W are provided one above the other between the indexer block and the processing block. For example, one reversing unit is used for reversing the substrate before a back surface cleaning processing by the back surface cleaning unit or for other purposes, and the other reversing unit is used for placing the substrate W after a top surface cleaning processing by the top surface cleaning unit or for other purposes.