Abstract: A dishwasher with a tub at least partially defining a treating chamber, a liquid spraying system, a liquid recirculation system defining a recirculation flow path, and a liquid filtering system. The liquid filtering system includes a rotating filter disposed in the recirculation flow path to filter the liquid.

Abstract: In a method for operating a dishwasher containing wash items, in particular a household dishwasher, at least at times a heated liquid to the wash items is applied during at least two of a plurality of program steps. A desorption process for desorption of a reversibly dehydratable drying material of a sorption drying system is effected at least at times. The desorption process is carried out at least partially before or during a first of the at least two program steps, with heated liquid being applied to the wash items during the at least two program steps.

Abstract: The method for producing a silicon epitaxial wafer according to the present invention has: a growth step G at which an epitaxial layer is grown on a silicon single crystal substrate; a first polishing step E at which, before the growth step G, both main surfaces of the silicon single crystal substrate are subjected to rough polishing simultaneously; and a second polishing step H at which, after the growth step G, the both main surfaces of the silicon single crystal substrate are subjected to finish polishing simultaneously.

Abstract: Provided is a chamber cleaning method capable of efficiently removing a CF-based shoulder deposit containing Si and Al deposited on an outer periphery of an ESC. A mixed gas of an O2 gas and a F containing gas is supplied toward an outer periphery 24a of an ESC 24 at a pressure ranging from about 400 mTorr to about 800 mTorr; plasma generated from the mixed gas is irradiated onto the outer periphery 24a of the ESC 24; an O2 single gas as a mask gas is supplied to the top surface of ESC 24 except the outer periphery 24a; and the shoulder deposit 50 adhered to the outer periphery 24a is decomposed and removed while preventing the top surface of ESC 24 except the outer periphery 24a from being exposed to a F radical.

Abstract: A device for cleaning a site of a luer activated valve (LAV) is disclosed. The device can include a cap having an inner cavity for receiving a site of the LAV. The cap can be formed to provide at least one aperture to the inner cavity when the site is received into the inner cavity. The device can also include one or more protrusions that extend inwardly from the cap to engage the site to maintain the cap on the site. The device can also include a cleaning agent that occupies some of the inner cavity. The cleaning agent can be formulated to clean the site as the inner cavity receives the site and when the cap is maintained on the site. The device can further include a removable seal that seals the cleaning agent within the inner cavity prior to the inner cavity of the cap receiving the site.

Abstract: A device for cleaning channels including a rod-shaped carrier element, at least one cleaning element that is connected with the carrier element, and at least one additional cleaning element that can be detached from the carrier element. A method for cleaning instrument channels wherein the cleaning device is moved in the axial direction in the instrument channel as far as an end point; after reaching the end point the cleaning device is moved back in the opposite axial direction in the instrument channel. Owing to the reverse motion of the cleaning device, the detachable cleaning element is released from the carrier element and thereafter is no longer part of the cleaning process of the previously cleaned instrument channel and can no longer soil the channel. The device and method removes from the instrument channel the substances that are to be removed and produces an efficient and good cleaning result.

Abstract: A graphite crucible for silicon single crystal manufacturing by the Czochralski method, having a long life cycle, contains at least one gas venting hole provided in a corner portion of the crucible. Gas generated by reaction between the graphite crucible and a quartz crucible is released to the outside through the gas venting hole, and formation of SiC on the surface of the graphite crucible and deformation of the quartz crucible caused by the pressure of the generated gas are prevented.

Abstract: A method of implementing cleaning solution replacement in a recyclable fluid cleaning system for semiconductor wafers includes activating electrode current for an electrolysis reactor included in the cleaning system. At least one of electrode voltage and operating time for the electrolysis reactor is monitored, until a trigger point has been reached. The trigger point includes one of the electrode voltage reaching a predetermined threshold voltage value, a process time counter reaching a predetermined counter value, and a time value that the electrode voltage has been at the threshold voltage value reaching predetermined value. The process time counter is incremented based on one or more of actual wafer processing time, wafer type, number of wafers processed, and thickness of material to be stripped. Upon reaching the trigger point, the electrode current is deactivated, and at least a portion of cleaning system fluid is drained and replaced with fresh cleaning fluid.

Abstract: Methods for removing halogen-containing residues from a substrate are provided. By combining the heat-up and plasma abatement steps, the manufacturing throughput can be improved. Further, by appropriately controlling the pressure in the abatement chamber, the removal efficiency can be improved as well.

Abstract: A cleaning station that includes a container designed to hold a solvent and having a floor and two pairs of side walls connected to form an enclosure, with a first shelf disposed at a location elevated in relation to the container floor and a second shelf disposed above the first shelf, the second shelf being slidable and being removably provided, there being brushes located in an opening in the first shelf that may be used for cleaning tools and a plurality of additional openings in the first shelf to allow the passage of solvent.

Abstract: An autonomous floor cleaning robot includes a transport drive and control system arranged for autonomous movement of the robot over a floor for performing cleaning operations. The robot chassis carries a first cleaning zone comprising cleaning elements arranged to suction loose particulates up from the cleaning surface and a second cleaning zone comprising cleaning elements arraigned to apply a cleaning fluid onto the surface and to thereafter collect the cleaning fluid up from the surface after it has been used to clean the surface. The robot chassis carries a supply of cleaning fluid and a waste container for storing waste materials collected up from the cleaning surface.

Abstract: A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiNx on the GaN film, etching a growth opening through the SiNx and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiNx layer can be removed after the growing step. A SiOx template can be formed on the GaN film and the GaN can be grown to cover the SiOx template before depositing SiNx on the GaN film. The SiOx template can be removed after growing the nanorods.

Abstract: Apparatus and method for removing an ink image from a plastic substrate, particularly a plastic container such as a cup, are provided. A solvent capable of solvating the ink image is utilized in order to de-ink articles so that they can be recycled and re-imprinted thereby reducing waste associated with printing line start up. As the articles may be intended for use with food and beverage products, a safe and non-toxic solvent may be selected. However, to ensure that the article is not contaminated with foreign materials prior to human use, the de-inked article may undergo a rinse and drying operation to remove solvent residues and UV light treatment to eliminate any harmful microorganisms that may be present on the article's surfaces.

Abstract: Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.

Abstract: A susceptor having a recessed portion and a ring-like step portion is arranged in a reaction chamber, and a plurality of through bores are formed in a bottom wall in the recessed portion excluding the step portion. A lift pin inserted in each of the through bores temporarily holds a wafer, then a lower surface of an outer peripheral portion of the wafer is mounted on the step portion to accommodate the wafer in the recessed portion, and a raw material gas is circulated in the reaction chamber to form an epitaxial layer on a wafer surface in the recessed portion. When forming the epitaxial layer on the wafer surface, the lift pin protrudes upwards from an upper surface of the bottom wall, and a height h of a top portion of the lift pin based on the upper surface of the bottom wall as a reference is set to the range from a position where the height h exceeds 0 mm to a position immediately before the lift pin comes into contact with the wafer.

Abstract: A substrate cleaning method that includes: a step in which, while a substrate holder is being continuously rotated, a to-be-discharged position of the cleaning liquid on the substrate is changed to an eccentric position deviated from the central part of the substrate, and a gas is discharged from a gas nozzle to the central part of the substrate so as to form a dried area of the cleaning liquid under a condition in which a shortest distance between an edge of a cleaning liquid flow output from the cleaning-liquid nozzle and an edge of a gas flow output from the gas nozzle is set between 9 mm and 15 mm.

Abstract: A sewer pipe is cleaned of collected solids by providing a water supply hose at a first location on the pipe and by driving a jet nozzle head to a second location along the pipe using jets directed along the pipe. At the second location the head is changed for a second head attached to a cable and is pulled back to the first location by the hose. The nozzle is then pulled back to the second location by pulling the cable while nozzles directed along the pipe toward the second location drive the solids forwardly to the second location for extraction.

Abstract: A dishwashing machine configured to detect the presence of rinse aid in fluid in a washing chamber of the dishwashing machine. An electronic controller selects the drying stage of the dishwashing cycle based on whether rinse aid is present.

Abstract: A method of operating a dishwasher having a treating chamber for washing dishes includes dispensing a detergent, supplying liquid to mix with the detergent to form a wash liquid, storing a first portion of the wash liquid in a reuse tank and using a second portion of the wash liquid in the treating chamber, supplying the first portion of the wash liquid from the reuse tank to the treating chamber.

Abstract: [Problem] To provide a liquid processing method with which, while alleviating a watermark occurring in the surface of a substrate, it is possible to hydrophobize the surface using a hydrophobing gas. [Solution] A substrate (W), retained in substrate retaining parts (21, 22, 23), is rotated and has a liquid compound supplied to the surface thereof, whereby a liquid process is carried out. Next, a rinse liquid is supplied to the surface of the substrate (W) while the substrate (W) is rotated, and the liquid compound is replaced with the rinse liquid. Next, supplying a hydrophobing gas for hydrophobizing the surface of the substrate (W) and supplying the rinse liquid to the surface of the substrate (W) after supplying the hydrophobing gas are repeated alternately, thus hydrophobizing the substrate (W). Next, the rinse liquid is removed by rotating the substrate (W), drying the substrate (W).