Abstract: An arrangement for boosting or igniting a glow discharge plasma for coating workpieces has at least one hollow body of an electrically conductive material formed such that when an electric signal is applied to the hollow body at least in a certain pressure and voltage range, the geometric conditions for the ignition of a discharge in the interior of the hollow body are satisfied. The hollow body has at least one opening through which charge carriers can flow off into the environs of the arrangement in order to ignite and operate the plasma or to boost a plasma existing there. The arrangement has a mechanism which connects the hollow body electrically with the workpieces such that the hollow body is essentially at workpiece potential.

Abstract: A batch processing chamber includes a chamber housing, a substrate boat for containing a batch of substrates in a process region, and an excitation assembly for exciting species of a processing gas. The excitation assembly is positioned within the chamber housing and may include plasma, UV, or ion assistance.

Abstract: A radiofrequency plasma reactor with first and second spaced electrodes has a concave surface facing a substrate supporting surface. A process area between the electrodes has a gas inlet for a process gas. A radiofrequency generator for frequencies greater than 13.56 MHz is connected to an electrode for generating a plasma discharge in and a gas outlet evacuates process gas. A dielectric layer has a convex surface engaging the concave electrode surface and an opposite planar surface. The substrate supporting surface receives a substrate of at least 0.7 m and defines a boundary of the process area to be exposed to the plasma. The dielectric layer is electrically in series with the substrate and plasma discharge and has capacitance per unit surface values which are not uniform for a distribution profile to compensate process non-uniformity along the working surface.

Abstract: This application discloses a High-Frequency plasma processing apparatus comprising a process chamber in which a substrate to be processed is placed, a process-gas introduction line for introducing a process gas into the process chamber, a first HF electrode provided in the process chamber, a first HF power source for applying voltage to the first HF electrode, thereby generating plasma of the process gas. The apparatus further comprises a second HF electrode facing the first HF electrode in the process chamber, interposing discharge space, and a series resonator connecting the second HF electrode and the ground. The frequency of the first HF power source is not lower than 30 MHz. The series resonator is resonant as the distributed constant circuit at the frequency of the first HF power source.

Abstract: The plasma processing apparatus M2 has a first and a second elongate electrodes 30, 30. A processing gas is introduced from a first aperture 30b formed between upper first edges of the electrodes 30, 30 into a gap 30a between the electrodes 30, 30. An electric field is applied and a plasma is generated between the electrodes 30, 30. The processing gas is blown-off from the gap 30a through a second aperture 30c formed between lower second edges of the electrodes 30, 30. A first side surface on the first edge of the first electrode 30 is covered by an insulative cover 22 including a cover main body 22A and a plasma-proof member 26 which is formed of an insulative material which is higher in plasma-proof property than the cover main body 22A. The plasma-proof member 26 forms a processing gas introducing hole which is continuous with the first aperture 30b. The plasma-proof member 26 is contacted with the first side surface.

Abstract: A magnetically enhanced plasma is produced with a permanent magnet assembly adjacent to a radio frequency (RF) biased wafer support electrode in a vacuum processing chamber of a semiconductor wafer processing apparatus. An annular peripheral region is provided on the wafer support around the perimeter of the wafer being processed. A magnet arrangement using a plurality of magnet rings forms a magnetic tunnel over the peripheral region at which the plasma is generated away from the wafer. The magnetic field has components parallel to the substrate support surface over the annular peripheral region but is generally isolated from the wafer. Preferably, the magnetic field has a flat portion parallel to the support surface in the peripheral region. Plasma propagates by diffusion from the peripheral region across the wafer surface. The magnets can be manipulated to optimize plasma uniformity adjacent the substrate being processed.

Abstract: Plasma confinement rings are adapted to reach sufficiently high temperatures on plasma-exposed surfaces of the rings to substantially reduce polymer deposition on those surfaces. The plasma confinement rings include an RF lossy material effective to enhance heating at portions of the rings. A low-emissivity material can be provided on a portion of the plasma confinement ring assembly to enhance heating effects.

Abstract: A plasma processing apparatus for converting a processing gas into a plasma by a high frequency power in a processing chamber and performing a plasma processing on a substrate mounted on a mounting table includes a ring portion disposed to surround the substrate on the mounting table, and a temperature control unit for establishing a temperature difference between the ring portion and the substrate, such that the ring portion is at least 50° C. higher than the substrate. Further, the processing gas generates chlorine radicals, and the temperature control unit is at least one of a heating unit for heating the ring portion and a cooling unit for cooling the mounting table.

Abstract: A vacuum vessel and at least two electrodes define an internal process space. At least one power supply is connectable with the electrodes. A substrate holder holds a substrate to be treated in the internal process space. At least one of the electrodes has along a first cross section a concave profile and has along a second cross section a convex profile, the first cross section being parallel to the second cross section. Gas is provided to the space through a gas inlet. Power is provided to the electrodes and the substrate is treated.

Abstract: A vacuum processing chamber and method of using a vacuum processing chamber are described and which includes a chamber defined by a chamber body, and wherein the chamber body defines an internal cavity; first and second electrodes are mounted in the internal cavity as defined by the chamber body; an RF generator is provided, and which produces single or multiple frequencies and which is electrically coupled to at least one of the first or second electrodes, and which are operable, when energized, to produce a plasma within the internal cavity of the chamber body; and an adjustable component borne by the chamber body, and which is fabricated, at least in part, from a dielectric material, and which selectively adjusts the equivalent dielectric constant which exists between the chamber body and the first electrode.

Abstract: A radiofrequency plasma reactor (1) for the treatment of substantially large sized substrates is disclosed, comprising between the electrodes (3, 5) of the plasma reactor a solid or gaseous dielectric layer (11) having a non planar-shaped surface-profile, said profile being defined for compensating a process non uniformity in the reactor or generating a given distribution profile.

Abstract: The present invention is a method and apparatus for cleaning a chemical vapor deposition (CVD) chamber using cleaning gas energized to a plasma in a gas mixing volume separated by an electrode from a reaction volume of the chamber. In one embodiment, a source of RF power is coupled to a lid of the chamber, while a switch is used to couple a showerhead to ground terminals or the source of RF power.

Abstract: A thin film forming apparatus includes: a first electrode having a first discharge surface and a second electrode having a second discharge surface, the first discharge surface facing opposite to the second discharge surface to form a discharge space; a gas supply unit for supplying a gas including a thin film formation gas to the discharge space; a power source for discharging and activating the gas by applying a high frequency electric field across the discharge space; and a film transporting mechanism for transporting a protecting film for preventing at least one of the first electrode and the second electrode from being exposed to the activated gas, wherein a thin film is formed by exposing a substrate to the activated gas and, the protecting film is transported in contact with at least one of the first discharge surface and the second discharge surface and with at least a part of a surface other than the discharge surface which continues to the discharge surface.

Abstract: The present invention presents an improved upper electrode for a plasma processing system, wherein the design and fabrication of an electrode plate with a deposition shield coupled to the upper electrode advantageously provides gas injection of a process gas with substantially minimal erosion of the upper electrode while providing protection to a chamber interior.

Abstract: In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.

Abstract: A plasma treatment apparatus is provided, which enables to increase a treatment area and provide good treatment uniformity. This apparatus comprises a pair of electrode plates having a plurality of through holes and an insulating plate having a plurality of through holes. The insulating plate is disposed between the electrode plates such that positions of the through holes of the electrode plates correspond to the positions of the through holes of the insulating plate. A plurality of discharge spaces are formed by the through holes of the electrode plates and the through holes of the insulating plate. By applying a voltage between the electrode plates, while supplying a plasma generation gas into the discharge spaces, plasmas are generated simultaneously in the discharge spaces, and sprayed on an object to efficiently perform a large-area, uniform plasma treatment.

Abstract: An apparatus includes a plasma process chamber and a support element capable of supporting a substrate inside the plasma process chamber. At least one plasma control element is placed adjacent to a peripheral portion of the support element such that the plasma control element is capable of influencing a plasma inside the plasma process chamber if an electric field is applied thereto. At least one voltage generator is connected to the plasma control element. The plasma control element is movable inside the process chamber such that it can be set to any of at least two different positions.

Abstract: A plasma processing apparatus of this invention includes a sealable chamber to be introduced with reactive material gas, a plurality of pairs of cathode-anode bodies arranged in the chamber, for forming a plurality of discharge spaces for performing plasma discharge of the material gas, a power supply for plasma discharge, placed outside the chamber, a matching box placed outside the chamber, for matching impedance between the cathode-anode bodies and the power supply, and a power introduction wire extending to each of the cathodes from the power supply via the matching box. Herein, the power introduction wire is branched to the number corresponding to the number of the cathodes between the matching box and the cathodes, and the branched wires are symmetrically extended.

Abstract: In the plasma processing apparatus of the present invention, a first electrode (21) for connecting a high frequency electric power source (40) in a chamber is arranged to be opposed to a second electrode (5). A substrate (W) to be processed is placed between the electrodes. There is provided a harmonic absorbing member (51) for being able to absorb harmonics of the high frequency electric power source (40) so as to come in contact with a peripheral portion or circumference of a face of the first electrode 21, which is opposite the second electrode (5). The harmonic absorbing member absorbs the reflected harmonic before the harmonic returns to the high frequency electric power source. By absorbing the harmonic in this manner, the standing wave due to the harmonic will be effectively prevented from being generated, and the density of plasma is made even.

Abstract: The present invention provides an arrangement and method for generating a uniform and stable plasma. The arrangement comprises a discharge space (7) between at least a pair of electrodes (1, 2), which electrodes (1, 2) are arranged for providing an electric field and for generating a plasma in the electric field. At least one of the electrodes (1) has a boundary surface (6) with the discharge space (7). The boundary surface is comprised of one or more alternately arranged conductive (4) and insulating regions (5). The invention further relates to an electrode (1) for use in the arrangement described. The invention may, for example, be used in dielectric barrier discharge configurations, or in arrangements for generating plasmas at atmospheric pressures, or for generating plasmas at low temperatures, such as generating atmospheric pressure glow plasmas (APG) for material processing or surface (3) treatment purposes.