Abstract: A vacuum plasma chamber for processing a workpiece includes first and second electrodes for electrical coupling with gas in the chamber and respectively connected to first and second relatively high and low frequency RF sources. The chamber includes a wall at a reference potential and a plasma confinement region spaced from the wall. A filter arrangement connected to the sources and the electrodes enables current from the first source to flow to the first electrode, prevents the substantial flow of current from the first source to the second electrode and the second source, and enables current from the second source to flow to the first and second electrodes and prevents the substantial flow of current from the second source to the first source.

Abstract: The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.

Abstract: For enhancing plasma uniformity and long-term stability so as to readily form a film with excellent uniformity of thickness and quality and with good repeatability and for suppressing occurrence of image defects and drastically increasing the yield to form a deposited film ready for volume production, particularly, a functional deposit film (for example, an amorphous semiconductor used for semiconductor devices, electrophotographic photosensitive members, photovoltaic devices, and so on) is formed in an apparatus including a reaction vessel which can be hermetically evacuated, a substrate holder in the reaction vessel, a source gas supply, a power supply for high-frequency power. An end covering member is provided at an end of each of the substrate holder, the source gas supply and the power supply.

Abstract: A damage-free apparatus for etching the large area by using a neutral beam which can perform an etching process without causing electrical and physical damages by the use of the neutral beam is provided. The damage-free etching apparatus includes: an ion source for extracting and accelerating an ion beam having a predetermined polarity; a grid positioned at the rear of the ion source and having a plurality of grid holes through which the ion beam passes; a reflector closely attached to the grid and having a plurality of reflector holes corresponding to the grid holes in the grid, the reflector for reflecting the ion beam passed through the grid holes in the reflector holes and neutralizing the ion beam into a neutral beam; and a stage for placing a substrate to be etched in a path of the neutral beam.

Abstract: A plasma etching apparatus for etching semiconductor wafers. The plasma etching apparatus has a reaction tube made of a dielectric material and a high frequency antenna located around the reaction tube for generating a plasma inside the reaction tube. The high frequency antenna has a sloped segment that produces a relatively large capacitive coupling with the reaction tube. The high frequency antenna is moved by a driver around the reaction tube in a horizontal plane.

Abstract: The present invention relates to an improved apparatus for plasma treatment of golf ball surface. The improved apparatus comprises a cylindrical basket shaped rotating tumbler made from aluminum sheet metal that holds a plurality of golf balls within a sealed casing for surface preparation. A staggered hole pattern yields about 57% of open area in the tumbler surface to insure evacuation with minimum resistance. The holes are individually machined and have machined radiuses at each side of the sheet metal to allow for adequate coverage of a hard anodic coating which is necessary for protection of the sheet metal from the high intensity plasma.

Abstract: An apparatus and method for holding a substrate on a support layer in a processing chamber. The method includes the steps of positioning the substrate a predetermined distance from the support layer, introducing a plasma in the processing chamber, lowering the substrate to a point where the substrate engages the support layer, and maintaining the plasma for a predetermined time. The apparatus is directed to a susceptor system for a processing chamber in which a substrate is electrostatically held essentially flat. The apparatus includes a substrate support and a support layer composed of a dielectric material disposed on the substrate support. At least one lift pin is used for supporting the substrate relative to the support layer. Means are provided for moving each lift pin relative to the support layer. Means are also provided for producing a plasma within the processing chamber.

Abstract: A gas delivery device useful in material deposition processes executed during semiconductor device fabrication in a reaction chamber, including the gas delivery device of the present invention and a method for carrying out a material deposition process, including introducing process gas into a reaction chamber using the gas delivery device of the present invention. In each embodiment, the gas delivery device of the present invention includes a plurality of active diffusers and a plurality of gas delivery nozzles, which extend into the reaction chamber. Before entering the reaction chamber through one of the plurality of gas delivery nozzles, process gas must first pass through one of the plurality active diffusers. Each of the active diffusers is centrally controllable such that the rate at which process gas flows through each active diffuser is exactly controlled at all times throughout a given deposition process.

Abstract: An apparatus for processing particulate dust when a substrate is arranged in a high vacuum enclosure, plasma is generated in the high vacuum enclosure, and a reactive material is introduced into the high vacuum enclosure to perform processing of the substrate. At least one collecting electrode is provided around the substrate in the high vacuum enclosure other than the electrode that generates plasma, and particulates generated in plasma are efficiently removed by applying a predetermined electric potential of a direct-current or an alternating current to the collecting electrode, and thus a deposition problem onto an inner wall of the vacuum enclosure and a deterioration problem of processing accuracy and a film quality associated with flowing of the particulates onto the substrate are solved.

Abstract: The present invention relates to chemical vapor deposition apparatus. In the chemical vapor deposition apparatus, an RF power source connection portionconnected to an external RF power source is installed on an upper side of a chamber; an RF electrode plate is installed within the chamber to be spaced with a predetermined gap from an inner upper surface of the chamber and to be spaced with a predetermined gap from a showerhead disposed below the RF electrode plate; plasma is generated in a first buffer portion, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the external RF power source to the RF electrode plate; the showerhead is divided into two sections in a vertical direction and a second buffer portion is defined by a space between the two sections; reactant gases are supplied to the first buffer portion in which the plasma is generated; and source gases are supplied to the second buffer portion.

Abstract: A thin film is fabricated while causing ions in a plasma P to be incident by effecting biasing relative to the space potential of the plasma P by imparting a set potential to the surface of a substrate 9. A bias system 6 causes the substrate surface potential Vs to vary in pulse form by imposing an electrode imposed voltage Ve in pulse form on a bias electrode 23 which is in a dielectric block 22. The pulse frequency is lower than the oscillation frequency of ions in the plasma P, and the pulse period T, pulse width t and pulse height h are controlled by a control section 62 in a manner such that the incidence of ions is optimized. The imposed pulses are controlled in a manner such that the substrate surface potential Vs recovers to a floating potential Vf at the end of a pulse period T, and that the ion incidence energy temporarily crosses a thin film sputtering threshold value in a pulse period T.

Abstract: An electrode assembly (50) and an associated plasma reactor system (10) and related methods for a variety of plasma processing applications. The electrode assembly provides control of a plasma density profile (202) within an interior region (30) of a plasma reactor chamber (20). The electrode assembly includes an upper electrode (54) having a lower surface (54L), an upper surface (54U) and an outer edge (54E). The lower surface of the upper electrode faces interior region of the plasma chamber housing the plasma (200), and thus interfaces with the plasma. The electrode assembly further includes a segmented electrode (60) arranged proximate to and preferably substantially parallel with the upper surface of the upper electrode. The segmented electrode comprises two or more separated electrode segments (62a, 62b, . . . 62n), each having an upper and lower surface. Each electrode segment is spaced apart from the upper electrode upper surface by a corresponding controlled gap (Ga, Gb, . . . Gn).

Abstract: An integrated etch/strip/clean apparatus is disclosed. The apparatus includes an etching line to etch and clean a substrate, a stripping line to strip the etched substrate, and a cleaning line to clean and dry the substrate. The cleaning line is on the stripping line. Accordingly, etch, strip and cleaning processes is performed by a single equipment. As a result, processing time installation space requirement of the equipment are reduced. Further, contamination of the substrate is prevented.

Abstract: A cold wall chemical vapor deposition apparatus includes: a chamber; a susceptor movable up and down in the chamber by a driving means, the susceptor including a heater and an internal electrode; a heat reflector over the susceptor, the heat reflector reflecting a heat emitted from the heater back to a wafer on the susceptor and serving as an correspondent electrode to the internal electrode; a heater control unit connected to the wafer, the heater and the driving means, the heater control unit sensing a temperature of the wafer, the susceptor moving according to the temperature; a gas supply unit supplying gases to the chamber; and a power source applying a voltage to the chamber.

Abstract: A vacuum-processing apparatus comprising a vacuum vessel, a processing chamber arranged in the vacuum vessel and a heater for heating a circumferential wall of the processing chamber, wherein a substrate is arranged in the processing chamber and the substrate is vacuum-processed in the processing chamber, characterized in that the vacuum-processing apparatus has a cooling plate located outside the processing chamber and arranged at a position to oppose the circumferential wall of the processing chamber for cooling the circumferential wall of the processing chamber, and a mechanism for moving the cooling plate so as to change a distance between the cooling plate and the circumferential wall of the processing chamber. A vacuum-processing method for performing a surface treatment for a substrate using the vacuum-processing apparatus.

Abstract: In a plasma CVD apparatus, a plate formed with a plurality of perforated holes is arranged to separate a plasma generation region and a processing region. The aperture ratio of the perforated holes to the plate is not greater than five percent. Plasma including radicals and excited species is generated from an oxygen (O2) gas in the plasma generation region, then the radicals and excited species flow into the processing region through the perforated holes. A monosilane (SiH4) gas is also supplied into the processing region, but the backward flow of the monosilane gas into the plasma generation region is suppressed by the plate. In the processing region, the radicals and the excited species and the monosilane gas result in a gas phase reaction that yields the silicon dioxide film formed on the substrate or the wafer with high quality.

Abstract: A plasma etching apparatus includes an upper electrode and a lower electrode (susceptor) on which a semiconductor wafer is disposed, the upper and lower electrodes being arranged within a process chamber, a first high frequency power source for applying a first high frequency power to the upper electrode, a second high frequency power source for applying a second high frequency power having a frequency lower than the frequency of the first high frequency power to the lower electrode. A third high frequency power source for superposing a third high frequency power having a frequency lower than that of the first high frequency power and higher than that of the second high frequency power on the first high frequency power. A phase controller for adjusting the phase difference between the second high frequency power and the third high frequency power.

Abstract: A plasma-resistant member used in a reaction chamber of a plasma treating apparatus is formed of a dense alumina sintered product having an average grain size of 18-45 &mgr;m, a surface roughness Ra of 0.8-3.0 &mgr;m and a bulk density of 3.90 g/cm3 or over.

Abstract: In a microwave plasma processing apparatus, a metal made lattice-like shower plate 111 is provided between a dielectric material shower plate 103, and a plasma excitation gas mainly an inert gas and a process gas are discharged from different locations. High energy ions can be incident on a surface of the substrate 114 by grounding the lattice-like shower plate. The thickness of each of the dielectric material separation wall 102 and the dielectric material at a microwave introducing part is optimized so as to maximize the plasma excitation efficiency, and, at the same time, the distance between the slot antenna 110 and the dielectric material separation wall 102 and a thickness of the dielectric material shower plate 103 are optimized so as to be capable of supplying a microwave having a large power.

Abstract: A plasma reactor electrode, a method of making it, and a plasma reaction chamber employing the inventive electrode, wherein the electrode is configured to provide superior thermal conductivity characteristics. In the inventive electrode, first and second plates are connected by pins. In one embodiment, the pins, and the first and second plates are made of the same material, such as aluminum. The connection of the pins through the first and second plates provides superior thermal conductivity between the first and second plates. A dielectric cover, which may be made of ceramic or quartz, may be added below the lower plate. To form a showerhead assembly, holes are formed in the lower plate, and also in the dielectric cover, in alignment with a plenum chamber, to provide appropriate inlet for process gas into the chamber.