Abstract: A method of manufacturing a light emitting device includes: bonding a light emitting element and a light transmissive member by a surface activated bonding method, which includes: activating a first bonding surface of the light emitting element to which the light transmissive member is to be bonded, by irradiating at least the first bonding surface with an ion beam, activating a second bonding surface of the light transmissive member to which the light emitting element is to be bonded, by irradiating at least the second bonding surface with an ion beam, and joining the light emitting element and the light transmissive member by bringing the activated first bonding surface and the activated second bonding surface into contact.

Abstract: A display apparatus includes light-emitting elements configured to emit light in a screen, a louver fixed on the screen with a fastener, and a member disposed on a surface of the louver around the fastener and configured to reflect, in multiple directions, external light incident to a portion around the fastener or absorb the external light.

Abstract: A display substrate is provided, which includes a base substrate, a plurality of pixel units arranged on the base substrate, and a function layer arranged at a light-emitting side of at least one pixel unit of the plurality of pixel units, wherein the function layer is configured to shield a light beam toward a first direction among light beams emitted by the at least one pixel unit, the function layer includes an organic layer and a light-shielding layer, and the light-shielding layer is arranged on a part of the organic layer, and configured to shield the light beam toward the first direction among the light beams emitted by the at least one pixel unit. An on-board display device and a method for manufacturing the display substrate are further provided.

Abstract: A light-emitting unit is provided. The light-emitting unit includes a light-emitting element, a light conversion layer, and a color filter layer. The light conversion layer is disposed on the light-emitting element. The color filter layer covers the sidewalls of the light conversion layer. In addition, the light-emitting unit further includes a protection layer located between the color filter layer and the light conversion layer.

Abstract: A display device includes: an underlayer, a first insulating film contacting an upper face of the underlayer, a semiconductor layer, a second insulating film, a first metal layer, a first resin layer, a first electrode, and a second resin layer, in order from a lower layer, wherein at least one of the underlayer, the first resin layer, and the second resin layer is a thin film layer having a maximum film thickness in a display region provided with a light-emitting element being thicker than a maximum film thickness in a frame region surrounding the display region.

Abstract: A display device includes a pixel in a display area. The pixel includes: a first electrode and a second electrode spaced from each other; a light emitting element between the first electrode and the second electrode, a first bank overlapping with one area of each of the first electrode and the second electrode in a plan view, the first bank including a first sidewall adjacent to the first end portion of the light emitting element and a second sidewall adjacent to the second end portion of the light emitting element; at least one of a third electrode on the first end portion of the light emitting element to connect the first end portion to the first electrode and a fourth electrode on the second end portion to connect the second end portion of the light emitting element to the second electrode.

Abstract: Solid-state lighting devices and more particularly light-emitting devices including light-emitting diodes (LEDs) with light-altering material arrangements are disclosed. LED devices may include light-altering materials that are provided around peripheral sidewalls of LED chips without the need for a supporting submount or lead frame. The light-altering materials may be provided with reduced thicknesses along peripheral sidewalls of LED chips. An exemplary LED device as disclosed herein may be configured with a footprint that is close to a footprint of the LED chip within the LED device while also providing an amount of light-altering material around peripheral edges of the LED chip to reduce cross-talk. Accordingly, such LED devices may be well suited for use in applications where LED devices form closely-spaced LED arrays. Fabrication techniques are disclosed that include laminating a preformed sheet of light-altering material on one or more surfaces of the LED chip.

Abstract: Embodiments described herein are directed towards enhanced systems and methods for applying underfill (UF) material to fill a gap between electrically coupled semiconductor devices in an integrated device. In some embodiments, uncured UF material may be applied to one edge of the gap, and capillary flow may be employed to distribute the uncured UF material into a first portion of the gap. To fill a second portion of the gap, accelerated motion may be employed. For example, the integrated device may be affixed to a centrifuge, and the centrifuge can be used to spin the integrated device to spread the uncured UF material further into the gap. In some embodiments, the accelerated motion may be employed to distribute the uncured UF material substantially uniformly within the gap. Once the uncured UF material has been spread out, one or more curing processes may be employed to cure the sandwiched UF material.

Abstract: A light-emitting device including a substrate, an insulating layer, an inner circuit structure, a plurality of light-emitting elements, an insulating encapsulation layer, and a transparent conductive layer is provided. The insulating layer is disposed on the substrate. The inner circuit structure is disposed on the insulating layer. The light-emitting elements are correspondingly disposed on the inner circuit structure. The insulating encapsulation layer is disposed on the inner circuit structure. The insulating encapsulating layer covers a portion of the inner circuit structure and encapsulates the light-emitting elements. The transparent conductive layer is disposed on the insulating encapsulating layer. The transparent conductive layer electrically connects the light-emitting elements, and serially connects the light-emitting elements.

Abstract: According to an aspect, a display device includes: a substrate; a plurality of pixels provided to the substrate; a plurality of light emitting elements provided to the pixels; and a first light diffusion layer including a plurality of light diffusion structures and having a first surface and a second surface opposite to the first surface, the second surface facing the substrate with the light emitting elements interposed between the second surface and the substrate. The light diffusion structures each include a plurality of high refractive index layers and a plurality of low refractive index layers. The high refractive index layers and the low refractive index layers are alternately layered in a thickness direction of the first light diffusion layer. The high refractive index layers and the low refractive index layers are each curved and recessed in a direction from the first surface toward the second surface.

Abstract: A quantum dot ink, a manufacturing method of a full-color film, and a display panel are provided. The quantum dot ink includes a plurality of quantum dots, a plurality of scattering particles, a polar solvent, and a transparent polymer material, wherein the transparent polymer material is used as a host material.

Abstract: A deep ultraviolet (DUV) light-emitting diode (LED) module structure contains: a holder configured to accommodate a substrate. The holder including a receiving cup mounted therein and a transparent layer mounted on a top of the receiving cup. The holder includes a DUV LED chip adhered on the substrate, and the holder, the substrate, and the DUV LED chip are connected and packaged. The substrate is electrically connected with a drive circuit, and the drive circuit is configured to turn on/off the DUV LED chip. Thereby, the DUV LED module structure enhances DUV radiation intensity, reduces a loss of optical path, and slows down deterioration because of DUV irradiation.

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to gap fill void and connection structures and methods of manufacture. The structure includes: a gate structure comprising source and drain regions; a gate contact in direct contact and overlapping the gate structure; and source and drain contacts directly connecting to the source and drain regions, respectively.

Abstract: Various embodiments of a sealed package and a method of forming such package are disclosed. The package includes a housing having an inner surface and an outer surface, a dielectric substrate having a first major surface and a second major surface, and a dielectric bonding ring disposed between the first major surface of the dielectric substrate and the housing, where the dielectric bonding ring is hermetically sealed to both the first major surface of the dielectric substrate and the housing. The package further includes an electronic device disposed on the first major surface of the dielectric substrate, and a power source disposed at least partially within the housing and electrically connected to the electronic device.

Abstract: A light-emitting device includes a semiconductor diode structure with one or more light-emitting active layers, an anti-reflection coating on its front surface, and a redirection layer on its back surface. Active-layer output light propagates within the diode structure. The anti-reflection coating on the front surface increases transmission of active-layer output light incident below the critical angle ?C. Active-layer output light incident on the redirection layer at an incidence angle greater than ?C is redirected to propagate toward the front surface at an incidence angle that is less than ?C. Device output light is transmitted by the front surface to propagate in an ambient medium, and includes first and second portions of the active-layer output light incident on the front surface at an incidence angle less than ?C, the first portion without redirection by the redirection layer and the second portion with redirection by the redirection layer.

Abstract: Examples of an integrated circuit a having an advanced two-dimensional (2D) metal connection with metal cut and methods of fabricating the same are provided. An example method for fabricating a conductive interconnection layer of an integrated circuit may include: patterning a conductive connector portion on the conductive interconnection layer of the integrated circuit using extreme ultraviolet (EUV) lithography, wherein the conductive connector portion is patterned to extend across multiple semiconductor structures in a different layer of the integrated circuit; and cutting the conductive connector portion into a plurality of conductive connector sections, wherein the conductive connector portion is cut by removing conductive material from the metal connector portion at one or more locations between the semiconductor structures.

Abstract: A light emitting device includes a Chip Scale Packaged (CSP) LED, the CSP LED including an LED chip that generates blue excitation light; and a photoluminescence layer that covers a light emitting face of the LED chip, wherein the photoluminescence layer comprises from 75 wt % to 100 wt % of a manganese-activated fluoride photoluminescence material of the total photoluminescence material content of the layer. The device/CSP LED can further include a further photoluminescence layer that covers the first photoluminescence and that includes a photoluminescence material that generates light with a peak emission wavelength from 500 nm to 650 nm.

Abstract: A UV LED device includes a base, a lens disposed on the base, an adhesive unit, an LED chip unit, and an encapsulating member. The adhesive unit has multiple layers and is connected between the base and the lens such that the base, the lens and the adhesive unit cooperatively define an enclosed space. The LED chip unit is disposed in the enclosed space. The encapsulating member is disposed in the enclosed space, and encapsulates the LED chip unit. The encapsulating member is made of a material the same as a material of at least one layer of the adhesive unit.

Abstract: A display module, a display screen and a display system are disclosed. The display module comprises a frame and multiple display unit boards assembled and installed on the frame to form a display surface. The frame comprises a border and a support frame installed in the border. Each display unit board comprises a circuit board and multiple pixel points installed on a front side of the circuit board, wherein a back side of the circuit board is installed on the border and the support frame, and each pixel point includes at least one LED chip. According to the display module of the invention, multiple display unit boards are assembled on the frame to form a display surface.

Abstract: The present disclosure discloses an LED bracket, including: a front bracket, wherein an LED lamp chip is provided in the front bracket; and a back bracket, wherein the back bracket is connected to the front bracket, and a diffusion material is provided on a side of the back bracket away from the front bracket, wherein the LED lamp chip can emit light from the front bracket and light emitted from a direction close to the back bracket passes through the diffusion material and then goes out from the back bracket. In the present disclosure, the front bracket is provided, the back bracket is additionally provided on the front bracket, the diffusion material is provided on the back bracket.