Abstract: There is provided a method for etching magnetic tunnel junction, using an etching apparatus including a sample loading chamber, a vacuum transition chamber, a reactive ion plasma etching chamber, an ion beam etching chamber, a coating chamber, and a vacuum transmission chamber. The method completes the etching of the magnetic tunnel junction in the reactive ion plasma etching chamber, performs ion beam cleaning in the ion beam etching chamber, and performs coating protection in the coating chamber. The transmission among the respective chambers is all in a vacuum state. The invention can overcome the bottleneck in the production of high-density small devices, while greatly improving the yield, reliability and production efficiency of the devices.

Abstract: A method and system for large scale Vertical-Cavity Surface-Emitting Laser (VCSEL) binning from wafers to be compatible with a Clock-Data Recovery Unit (CDRU) and/or a VCSEL driver are provided. An illustrative method of binning is provided that includes: for at least a portion of VCSELs on a wafer, measuring a set of representative parameters of the VCSELs, of predetermined DC or small-signal values, and sorting the measured VCSELs into clusters according to the measured set of representative parameters of the VCSELs; further sorting the clusters into sub-groups that comply with specifications of the VCSEL driver; and providing a feedback signal to the CDRU for equalizing control signals provided to the VCSEL driver.

Abstract: A method of fabricating a radiation emitter including fabricating a layer stack that includes a first reflector, at least one intermediate layer, an active region and a second reflector; locally oxidizing the intermediate layer and thereby forming at least one unoxidized aperture; and locally removing the layer stack, and thereby forming a mesa that includes the first reflector, the unoxidized aperture, the active region, and the second reflector. Before or after locally removing the layer stack and forming the mesa: forming at least a first unoxidized aperture and at least a second unoxidized aperture inside the intermediate layer; etching a trench inside the layer stack, the trench defining a first portion and a second portion of the mesa, wherein the trench severs the intermediate layer(s) so that the first aperture is located in the first portion and the second aperture is located in the second portion of the mesa.

Abstract: In some implementations, an optical device for mounting in a flip-chip configuration includes a plurality of flip-chip bumps that are arranged in a pattern on the optical device, wherein the pattern is not aligned with a crystal cleavage plane associated with a substrate of the optical device. In some implementations, the optical device further includes a gap that separates a primary region of the optical device and a secondary region of the optical device, wherein at least one portion of a side of the gap is oriented at a non-zero angle to the crystal cleavage plane.

Abstract: A laser device is provided which comprises a common waveguide layer and a plurality of laser bodies, wherein each of the laser bodies has an active region configured for generating coherent electromagnetic radiation. The laser bodies are arranged side by side on the common waveguide layer, wherein the laser bodies are directly adjacent to the common waveguide layer. In particular, the laser bodies are configured to be phase-coupled to each other via the waveguide layer during operation of the laser device. Furthermore, a method for producing such a phase-coupled laser device is provided.

Abstract: An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to the embodiment includes: a first emitter having a first aperture and a first insulating region; a second emitter having a second aperture and a second insulating region and disposed adjacent to the first emitter; a third emitter having a third aperture and a third insulating region and disposed adjacent to the first emitter and the second emitter; and a first trench region disposed between the first emitter and the third emitter. The first trench region is disposed inside a virtual triangle connecting a center of the first aperture of the first emitter, a center of the second aperture of the second emitter, and a center of the third aperture of the third emitter.

Abstract: A quantum cascade laser includes a substrate having a group III-V compound semiconductor and a core region that is provided on the substrate and that includes a group III-V compound semiconductor. The core region includes a plurality of unit structures that are stacked on top of one another. Each of the plurality of unit structures includes an active layer and an injection layer. The injection layer includes at least one strain-compensated layer including a first well layer and a first barrier layer and at least one lattice-matched layer including a second well layer and a second barrier layer. The first well layer has a lattice constant larger than a lattice constant of the substrate. The first barrier layer has a lattice constant smaller than the lattice constant of the substrate. The second well layer and the second barrier layer each have a lattice constant that is lattice-matched to the substrate.

Abstract: In some implementations, a surface emitting laser may have an emitter design with a short oxidation length and/or a large number of trenches. For example, the surface emitting laser may comprise a metallization layer comprising multiple extended portions extending outwards from a circumference of an inner ring portion, and multiple tabs extending laterally from the multiple extended portions in a partial ring shape. The surface emitting laser may further comprise multiple via openings connecting the metallization layer to a plating metal, where each via opening is positioned over a corresponding tab, of the multiple tabs. The surface emitting laser may comprise multiple oxidation trenches that are each formed in an angular gap between a pair of extended portions, of the multiple extended portions, such that the multiple tabs and the multiple via openings are exclusively outside outer radii of the multiple oxidation trenches.

Abstract: A light emitting element formed of a laminate having a current constriction layer includes: a semiconductor substrate; a light emitting portion having plural first recess portions having a depth reaching the current constriction layer, and a current constriction structure formed in the current constriction layer and having an oxidized region where the current constriction layer is oxidized and a non-oxidized region surrounded by the oxidized region; an electrode pad disposed between the light emitting portion and an outer edge portion of the semiconductor substrate; and a step portion disposed between the electrode pad and the light emitting portion and formed from an upper surface of the laminate to the current constriction layer, and the current constriction layer in a region surrounded by the step portion is the oxidized region except for the non-oxidized region.

Abstract: A corrected mesa structure for a VCSEL device is particularly configured to compensate for variations in the shape of the created oxide aperture that result from anisotropic oxidation. In particular, a corrected mesa shape is derived by determining the shape of an as-created aperture formed by oxidizing a circular mesa structure, and then ascertaining the compensation required to convert the as-created shape into a desired (“target”) shaped aperture opening. The compensation value is then used to modify the shape of the mesa itself such that a following anisotropic oxidation yields a target-shaped oxide aperture.

Abstract: A method for forming a metal contact in a deep hole in a workpiece. A first hole is formed that extends from the upper surface of the workpiece to a substrate at the bottom of the hole. The hole is then filled with photoresist. Next, a photolithographic process is performed to create a second hole within the photoresist and to expose the substrate; and a wet etch is performed to remove a portion of the substrate. A layer of contact metal is then deposited on the surface of the photoresist. In the second hole, the metal layer is formed on the exposed surface of the substrate and on discontinuous portions of the photoresist on the sidewalls. A liftoff process is then used to remove the photoresist and the metal deposited on the photoresist while leaving the metal at the bottom of the second hole in contact with the substrate.

Abstract: A GaN-based VCSEL chip based on porous DBR and a manufacturing method of the same, wherein the chip includes: a substrate; a buffer layer formed on the substrate; a bottom porous DBR layer formed on the buffer layer; an n-type doped GaN layer formed on the bottom porous DBR layer, which is etched downward on its periphery to form a mesa; an active layer formed on the n-type doped GaN layer; an electron blocking layer formed on the active layer; a p-type doped GaN layer formed on the electron blocking layer; a current limiting layer formed on the p-type doped GaN layer with a current window formed at a center thereof, wherein the current limiting layer covers sidewalls of the active layer, the electron blocking layer and the convex portion of the n-type doped GaN layer; a transparent electrode formed on the p-type doped GaN layer; an n-electrode formed on the mesa of the n-type doped GaN layer; a p-electrode formed on the transparent electrode with a recess formed therein; and a dielectric DBR layer formed on

Abstract: A laser arrangement includes a laser array, and an optical arrangement. The laser array includes lasers in a first pattern emitting a same laser emission profile around a first optical axis with a divergence angle ?/2. The optical arrangement has a diffusor with an array of optical elements in a second pattern, with a second optical axis, and with an illumination pattern along a first illumination axis in a field-of-view if laser light is received within a defined range smaller than or equal to a range of angles between ?/+? with respect to the second optical axis. A row of lasers parallel to the first illumination axis has a pitch p. A row of m optical elements is parallel to the first axis. Each optical element has a diameter L, and contacts its neighbor. The n lasers and the m optical elements satisfy n*p=m*L with a deviation smaller than +/?5%.

Abstract: Gallium and nitrogen containing optical devices operable as laser diodes and methods of forming the same are disclosed. The devices include a gallium and nitrogen containing substrate member, which may be semipolar or non-polar. The devices include a chip formed from the gallium and nitrogen substrate member. The chip has a width and a length, a dimension of less than 150 microns characterizing the width of the chip. The devices have a cavity oriented substantially parallel to the length of the chip.

Abstract: Surface-emitting laser devices and light-emitting devices including the same are provided. A surface-emitting laser device can include: a first reflective layer and a second reflective layer; and an active region disposed between the first reflective layer and the second reflective layer, wherein the first reflective layer includes a first group first reflective layer and a second group first reflective layer, and the second reflective layer includes a first group second reflective layer and a second group second reflective layer.

Abstract: A surface-mountable electrical device, an assembly including the surface-mountable electrical device, and a method for producing the surface-mountable electrical device is provided. The surface-mountable electrical device includes at least one electrical component which is a semiconductor component and which is intended for generating radiation, a control circuit for pulsed operation of the component, and a capacitor which is connected to the component electrically in series and which is configured for the pulsed energization of the component. The surface-mountable electrical device further includes a lead frame assembly having a plurality of different lead frames as a mounting platform for the component, the capacitor and the control circuit, wherein at least one of the different lead frames of the lead frame assembly is thinner than a further lead frame of the different lead frames and the lead frame assembly lies only partially in a mounting side of the device.

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor comb lasers. In some examples disclosed herein, a multi-wavelength semiconductor comb laser may include a waveguide included in an upper silicon layer of a silicon-on-insulator (SOI) substrate. The comb laser may include a quantum dot (QD) active gain region above the SOI substrate defining an active section in a laser cavity of the comb laser and a dispersion tuning section included in the laser cavity to tune total cavity dispersion of the comb laser.

Abstract: A CO2 laser that generates laser-radiation in just one emission band of a CO2 gas-mixture has resonator mirrors that form an unstable resonator and at least one spectrally-selective element located on the optical axis of the resonator. The spectrally-selective element may be in the form of one or more protruding or recessed surfaces. Spectral-selectivity is enhanced by forming a stable resonator along the optical axis that includes the spectrally-selective element. The CO2 laser is tunable between emission bands by translating the spectrally-selective element along the optical axis.

Abstract: A vertical-cavity surface-emitting laser (VCSEL) is provided. The VCSEL includes a mesa structure disposed on a substrate. The mesa structure has a first reflector, a second reflector, and an active cavity material structure disposed between the first and second reflectors. The mesa structure defines an optical window through which the VCSEL is configured to emit light. The mesa structure further includes a passivation layer disposed at least within the optical window. The passivation layer is designed to seal the mesa structure to reduce the humidity sensitivity of the VCSEL and to protect the VCSEL from contaminants. The passivation layer also provides an improvement in overshoot control, broader modulation bandwidth, and faster pulsing of the VCSEL such that the VCSEL may provide a high speed, high bandwidth signal with controlled overshoot and dumping behavior.

Abstract: This invention provides a current self-checking regulation circuit based on voltage calibration including a bandgap reference unit, a self-calibration unit, a detection and regulation unit, current mirror units, and a current mirror control unit. The bandgap reference unit is configured to generate a voltage signal, the self-calibration unit is configured to respond to a digital signal of the detection and regulation unit and calibrate the voltage signal of the bandgap reference unit. The detection and regulation unit samples the reference current signal and a mirror current signal of the regulation group current mirror unit and generate a digital control signal according to the reference current signal. and the reference group current mirror unit responds to the digital control signal and outputs a regulated bias current signal meeting needs of the laser driver.