Abstract: The present invention relates to wavelength tunable DBR semiconductor laser devices in which light waves generated from a plurality of laser portions (or laser channels) are combined. This type of semiconductor laser device requires that the laser channels together cover an entire desired wavelength range, allowing the oscillation wavelength to be continuously varied over this range. However, to accomplish this, it is necessary to employ highly accurate crystal growth and process techniques. Furthermore, the length of the gain region must be reduced to increase the range over which the oscillation wavelength can be continuously varied, making it difficult to achieve laser oscillation. Two laser channels operate in combination, and a combiner combines the light waves emitted from these laser portions (or laser channels) so as to cover one entire wavelength range.

Abstract: A semiconductor laser device includes a package having a front surface, a rear surface and an outer peripheral surface; a semiconductor laser element and a light receiving element provided on the front surface; a plurality of leads arranged in spaced relation on the front surface as extending outward from the package; and an optical element supported above the front surface with its optical axis perpendicular to the front surface for guiding a laser beam emitted from the semiconductor laser element toward an object and guiding light reflected on the object to the light receiving element; wherein the outer peripheral surface is configured so as to be fitted in a cylindrical hole having an axis parallel to the optical axis of the optical element, and has a recess extending from the front surface to the rear surface, and the leads are bent as extending from the front surface and passing through the recess with distal portions thereof extending along the optical axis of the optical element and with proximal ends

Abstract: Two thin-clad laser diodes are disposed to form a stack-type diode laser device. The diodes emit two beams that are substantially parallel and in proximity such that they share many fiberoptic systems designed for a single beam. The diodes are coupled by leaky waves through top surfaces. The leaky waves are generated by a thin metal contact layer or diffractive gratings. The stack-type device is employed for single-mode power enhancement and tunable lasers.

Abstract: A traveling-wave ring laser resonator includes one or more gain-elements for generating fundamental radiation and three optically nonlinear crystals. A portion of the fundamental radiation is converted to second-harmonic radiation in a first of the crystals. Remaining fundamental radiation and the second-harmonic radiation traverse a second of the optically nonlinear crystals where a portion of each is converted to third-harmonic radiation. Fundamental and second-harmonic radiation pass through the third of the optically nonlinear crystals where most of the second-harmonic radiation is converted back to fundamental radiation. The third-harmonic radiation can be delivered from the resonator as output radiation or mixed with the fundamental radiation in a fourth optically nonlinear crystal to generate fourth harmonic radiation. An optical parametric oscillator arrangement is also disclosed.

Abstract: A chip carrier having improver thermal properties, wherein the chip carrier may be formed having waist section, and a first transverse end portion joined to the waist section. A first surface of the carrier being configured to receive a chip thereon, and a second surface of the carrier configured to be coupled to a thermal control unit to provide cooling of the carrier and chip. The chip carrier may have a second transverse end portion joined to the waist portion in certain embodiments.

Abstract: A distributed feedback laser comprising a guide layer is disclosed and includes a plurality of waveguides connected in a stepped multi-branch structure, the guide layer serving as a transmission medium for light having a predetermined wavelength, and an active layer, formed on the guide layer, for oscillating light, wherein light is branched according to a predetermined ratio while proceeding from a higher waveguide to a lower waveguide within the guide layer.

Abstract: An apparatus and method are disclosed for operating a narrow band short pulse duration gas discharge laser output light pulse beam producing system, producing a beam comprising laser output light pulses at a selected pulse repetition rate, which may comprise: a dispersive center wavelength selection optic selecting at least one center wavelength for each pulse determined at least in part by the angle of incidence of the laser light pulse beam containing the respective pulse on the dispersive wavelength selection optic; a tuning mechanism operative to select at least one angle of incidence of a first spatially defined portion of the laser light pulse beam containing the respective pulse upon the dispersive center wavelength selection optic; and, the tuning mechanism comprising a variably refractive optical element defining a plurality of refractive angular displacements of the first spatially defined portion of the laser light pulse beam passing through the variably refractive optical element at one of a plura

Abstract: A method and apparatus is provided for producing near-diffraction-limited laser light, or amplifying near-diffraction-limited light, in diode pumped alkali vapor photonic-band-gap fiber lasers or amplifiers. Laser light is both substantially generated and propagated in an alkali gas instead of a solid, allowing the nonlinear and damage limitations of conventional solid core fibers to be circumvented. Alkali vapor is introduced into the center hole of a photonic-band-gap fiber, which can then be pumped with light from a pump laser and operated as an oscillator with a seed beam, or can be configured as an amplifier.

Abstract: A new class of lasers is provided that can be pumped by conventional high-power, multi-mode, broadband 1-D and 2-D laser diode arrays with spectral widths greater than 0.01 nm, where the pumped laser gain medium comprises an atomic vapor of one the alkali elements (Li, Na, K, Rb or Cs), buffered with a mixture of rare-gas (He, Ar, Kr, Ne or Xe) and selected molecular gases. The alkali atom gain medium is pumped at a wavelength matching the wavelength of the 2S1/2–2P3/2 electric-dipole-allowed transition (the D2 transition). After kinetic relaxation of pump excitation to the excited 2P1/2 electronic level, laser emission takes place on the 2P1/2–2S1/2 transition (the D1 transition).

Abstract: Controller calibration methods for use with sampled grating distributed Bragg reflector SGDBR laser (102) is presented. An exemplary method includes conducting a two-dimensional mirror current scam of each front mirror current setting and back mirror current setting for a sampled grating distributed Bragg reflector SGBDR laser(102) to produce laser setting data corresponding to each front mirror current setting and back mirror current setting to generate a reference optical signal (114) of the SGDBR laser (102). A channel operating point is determined for each channel within the two-dimensional scan data. A fix up of the operating point to substantially minimize wavelength and power error can also be performed. A two-dimensional control surface is characterized at the channel operating point for each channel. A lookup table for controlling the SGDBR (102) laser is generated from the operating point currents, locker values and two-dimensional control surface data from each channel.

Abstract: A method and device for tuning the wavelength of an optoelectronic component arrangement including at least two optoelectronic components. The characteristic wavelength for each optoelectronic component is adjusted using a respective resistance device which is connected between a common voltage/power source and a respective heating device associated with each optoelectronic component. Heating capacity is modified by changing the overall resistance of the respective resistance device (RM) in order to adjust wavelength. The wavelength of semiconductor lasers, filters, wavelength multiplexers and waveguides may be tuned.

Abstract: A vertical cavity surface emitting laser having an oxidizable layer oxidized with enhanced lateral oxidation. The oxidation may involve adding oxygen in the form of a fluid, with or without other fluid such as water vapor, in the oxidizing environment, and/or in the layer to be oxidized. This oxidation approach may be used for layers with relatively low aluminum content such as in InP based structures, or with high aluminum content such as in GaAs based structures.

Abstract: In order to improve a pumping light source for laser-active media comprising an outer member enclosing a gas discharge medium, a first electrode acting as a cathode and having a first electrode end located within the outer member, a second electrode acting as an anode and having a second electrode end located within the outer member and a gas discharge chamber located within the outer member between the electrode ends facing one another, in such a manner that the service life thereof is longer it is suggested that the first electrode end be essentially cooled by radiation and that a predominantly diffuse gas discharge be formed proceeding from an areally extended surface area located at the first electrode end.

Abstract: A pumping module is provided with a first square rod group including a first square rod having two heat sinking surfaces normal to a direction of y axis perpendicular to an optical axis, and a second square rod having two heat sinking surfaces normal to a direction of x axis perpendicular to the optical axis and the direction of the y axis, and a second square rod group including a third square rod having two heat sinking surfaces normal to the direction of the y axis and a fourth square rod having two heat sinking surfaces normal to the direction of the x axis. A polarization rotator is disposed between the first and second square rod groups, for rotating a polarization of laser light passing therethrough by 90 degrees.

Abstract: In a tunable optical source, a diffraction device 115 is used to provide wavelength selective feedback to a laser diode 100. The diffraction device 115 is at least partially fabricated in a material whose refractive index is controllable so as to control the diffraction performance of the device. This allows the diffraction device 115 to be used in tuning the optical source, potentially without using moving parts. For instance, the refractive index can be controlled using a temperature change across material of the device 115. The diffraction device 115 can be mounted in free space in an external cavity with respect to the laser diode 100. Novel forms of diffraction device 115 are described. Tunable optical sources of this type can be used for instance in communications, particularly wavelength division multiplexing.

Abstract: An oil-free pulser design can be used to produce an excimer or molecular fluorine laser system that is lighter, cheaper to produce, and simpler than existing systems. Such designs allow a relatively low DC voltage to be applied to a main transformer, allowing the pulser to be run without oil cooling. This relatively low voltage can be increased to the necessary voltage level, such as on the order to 12 kV to 15 kV, needed to drive the laser system. This transference can be accomplished using standard components, such as a pair of capacitor elements that are pulse-charged in parallel, but can be discharged in series following a reversal of charge on one of the capacitor elements.

Abstract: A solid state, laser light control device (20, 30) and material (10), and methods of producing same. The device (20, 30) and material (10) consist essentially of a host material (14) which contains: a dopant species (16) at a first valence state (a), the concentration of which increases with distance from the surface (18); and the same dopant species (16) at a second valence state (b), the concentration which decreases with distance from the surface (18). The method comprises the steps of: obtaining a doped solid state material (14); exposing the solid state material (14) to elevated temperature, for a period of time, in an oxidizing or reducing atmosphere. The elevated temperature and time of exposure are selected to change the valence state (a) of the dopant (16) in direct proportion to distance from the surface (18) of the solid state material (16).

Abstract: A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer.

Abstract: There is provided a harmonic generator generates high power laser light and can be modulated at high modulation rate. The semiconductor laser emits a first output light when a bias current is supplied, and a second output light when a modulating current is superposed to the bias current. On of the first output lights has a wavelength inside of a wavelength tolerance of phase-matching of the wavelength-converting element. The other has a wavelength outside of the wavelength tolerance of phase-matching.

Abstract: An optical output control circuit has a semiconductor laser for supplying a modulating electric current and a bias electric current thereto, a modulating electric current supplying device for supplying the modulating electric current on the basis of an inputted modulating signal, and a bias electric current supplying device for supplying the bias electric current. A first temperature correcting device for increasing the modulating electric current with a rise in ambient temperature is arranged in the modulating electric current supplying device, and a second temperature correcting circuit for increasing the bias electric current with the rise in ambient temperature is arranged in the bias electric current supplying device.