Abstract: According to one embodiment, a semiconductor device 1 includes a temperature sensor module 10 that outputs a non-linear digital value with respect temperature and a substantial linear sensor voltage value with respect to the temperature, a storage unit 30 that stores the temperature, the digital value, and the sensor voltage value, and a controller 40 that calculates a characteristic formula using the temperature, the digital value, and the sensor voltage value stored in the storage 30, in which the temperature, the digital value, and the sensor voltage value stored in the storage unit 30 include absolute temperature under measurement of absolute temperature, the digital value at the absolute temperature, and the sensor voltage value at the absolute temperature.

Abstract: Examples of temperature measurement calibration in an additive manufacturing system are described. In one case, a method of calibrating a non-contact temperature measurement device involves applying energy from a radiation source of the additive manufacturing system to heat a reference element. The reference element is thermally coupled to a temperature sensor. A temperature reading from the temperature sensor is compared with data from the non-contact temperature measurement device to calibrate the device.

Abstract: A visually sensible indicator of temperature including electronic temperature sensing circuitry sensing at least when a temperature exceeds at least one predetermined temperature threshold and providing at least one corresponding threshold exceedance output which is sensible as heat and a heat-responsive visually sensible display which is responsive to the at least one threshold exceedance output for providing at least one visually sensible indication indicating that the temperature has exceeded the predetermined temperature threshold.

Abstract: A temperature detection module for detecting a temperature of a measurement target is provided. The temperature detection module includes a temperature sensor, and a holder for holding the temperature sensor such that movement is possible in a separation and contact direction in which the temperature sensor is separated from and brought into contact with the measurement target. The temperature sensor includes a sensor main body portion in which a temperature detection element is accommodated, and a spring portion that is integrally provided on the sensor main body portion. The spring portion is of a type that expands and contracts only in a single direction, and expands and contracts only in the separation and contact direction. The spring portion is attached to the holder and biases the temperature sensor such that a detection surface comes into contact with the measurement target.

Abstract: A thermowell assembly for use in measuring a temperature of a process fluid includes an elongate thermowell body configured to mount to a process vessel and extend into the process fluid. An elongate bore extends along a length of the thermowell body from a proximal end of the thermowell body proximate a wall of the process vessel to a sealed distal end of the thermowell body positioned in the process fluid. A side bore extends from an exterior of the thermowell assembly to the elongate bore. The side bore is positioned outside of the process vessel. A verification valve includes an inlet coupled to the side bore at the exterior of the thermowell assembly and further includes an outlet.

Abstract: In an embodiment a dew point sensor device includes a semiconductor substrate, a top layer arranged on the semiconductor substrate, a Peltier element integrated in the semiconductor substrate, a temperature sensor, a capacitor arranged at a surface of the top layer facing away from the semiconductor substrate, the temperature sensor and the capacitor being arranged so that a temperature of the capacitor is measurable by the temperature sensor, wherein the capacitor includes a plurality of capacitor elements each having a capacitance, and an electronic circuit configured for an individual determination of the capacitances and a generation of a set of binary digits, each of the binary digits corresponding to one of the capacitor elements and indicating whether the capacitance of the capacitor element is within a predefined range.

Abstract: Examples of an integrated active fiber optic temperature measuring device are disclosed. The integrated temperature measuring device comprises a fiber optic probe and an optoelectronic circuitry integrated into a single device which is then individually calibrated. The fiber optic probe has a fiber bundle with an active material at the tip of the probe. The optoelectronic circuitry is connected to the fiber optic probe. The optoelectronic circuitry includes a light source configured to provide an excitation light to the active material, a detector to detect the emitted light, a processing unit configured to determine a temperature based on a change in an emission intensity at a single wavelength range or the change in intensity ratio of two or more wavelength ranges, a lifetime decay, or a shift in emission wavelength peak of the emitted light, and a calibration means configured to calibrate the integrated active fiber optic temperature sensor.

Abstract: A method of operating a semiconductor device can include providing a multi-bit count value to a temperature sensing circuit; and generating an output having a detect logic level from the temperature sensing circuit based on an internal temperature of the semiconductor device and the count value. In some embodiments, a semiconductor device can be a dynamic random access memory (DRAM) device.

Abstract: In one aspect, a temperature sensing assembly includes a thermowell, a temperature sensor, and at least one electrically conductive element. The thermowell includes a first gas impermeable barrier element defining a first chamber and a second gas impermeable barrier element defining a second chamber. The temperature sensor is at least partially disposed within the first chamber. The at least one electrically conductive element is connected to the temperature sensor in the second chamber.

Abstract: A thermocouple capable of preventing a decrease in strength of a temperature measuring junction portion while maintaining temperature responsiveness and productivity in comparison with a conventional thermocouple. A thermocouple including two wires and a clamping member, the clamping member clamping the two wires while distal end portions of the wires being in contact with each other in parallel to provide a temperature measuring junction portion, in which when it is assumed that diameters of the two wires are d1 and d2 (where d1?d2) respectively; a length of the temperature measuring junction portion in a longitudinal direction of the two wires is L; a maximum width of the temperature measuring junction portion in a parallel direction of the two wires is D; and a maximum width in a direction orthogonal to the parallel direction in a cross section of the temperature measuring junction portion is E, the following equations are satisfied: 0.

Abstract: In one example embodiment, a semiconductor system includes a first chip configured to generate first temperature information of the first chip, the first temperature information being based on at least one temperature measurement using at least one first temperature sensor. The semiconductor system further includes a second chip including a second temperature sensor configured to be controlled based on at least the first temperature information.

Abstract: A substrate treatment method in accordance with an exemplary embodiment includes: heating a substrate, for a substrate treatment process, so that a temperature of the substrate reaches a target temperature; calculating the temperature of the substrate using a sensor located facing the substrate while heating the substrate; and controlling an operation of a heating part configured to heat the substrate according to the temperature calculated from the calculating the temperature, wherein the calculating the temperature comprises: measuring a total radiant energy (Et) radiated from the substrate using the sensor; calculating a corrected total emissivity (?t0) by applying a correction value for correcting the total emissivity (?t) which is the emissivity of the radiant energy (Et); and calculating the temperature (Ts) of the substrate using the total radiant energy (Et) and the corrected total emissivity (?t0).

Abstract: The invention relates to detecting a composition of a sample or contamination in liquids by detecting corresponding changes in their thermal properties. In a disclosed arrangement, an apparatus is provided comprising a first probe element configured to provide a first surface in direct contact with the sample and a second surface that is not in direct contact with the sample. A measurement system measures a rate of heat transfer through the first surface. A processing unit analyses the measured rate of heat transfer in order to detect a heat transfer characteristic of the sample that is indicative of a composition of the sample.

Abstract: Exemplary systems for detecting water include: a light source positioned to transmit thermal radiation through a sample; a lens assembly positioned to: receive the thermal radiation transmitted through the sample; and focus the transmitted thermal radiation onto a filter positioned between the lens assembly and a detector; and a cooling subsystem for cooling the filter and the detector to a temperature below that of the sample. The filter (1) selectively transmits first portions of the thermal radiation received from the lens assembly and characterized by a wavelength at least partially overlapping a predefined water absorption band and/or a predefined water absorption line; and (2) selectively blocks second portions of the thermal radiation received from the lens assembly and characterized by a wavelength outside the predefined water absorption band and/or the predefined water absorption line. Methods for detecting presence of water in a sample are also disclosed.

Abstract: A temperature sensing assembly includes first and second temperature sensors disposed within an elongate mineral insulated conductive sheath. A junction point of the first temperature sensor is electrically connected to the conductive sheath. The second temperature sensor is electrically isolated from the conductive sheath. Measurements obtained from the electrically isolated temperature sensor can be used to test insulation resistance of the assembly or temperature indications from the electrically isolated temperature sensor can be compared to measurements taken from the electrically connected junction point to take a variety of corrective actions during use of the temperature sensing assembly, such as adjusting the installation of the assembly or applying correction factors to measurements obtained from one of the temperature sensors.

Abstract: A system for monitoring a junction temperature of a semiconductor device includes a sensing resistor electrically coupled to a source terminal of the semiconductor device in a gate loop of the semiconductor device. The system includes a detection circuit electrically coupled to the gate loop of the semiconductor device and configured to measure a voltage difference across the sensing resistor. The system also includes an electronic control unit electrically coupled to the gate loop and the detection circuit. The electronic control unit is configured to determine a first gate current peak during a switching process of the semiconductor device, wherein the first gate current peak is determined based on the voltage detected by the detection circuit. The electronic control unit is configured to determine the junction temperature based on the first gate current peak.

Abstract: Methods for thermographic inspection of structures are disclosed. An example method includes positioning at least one of a heat source or a camera in a cavity defined by a first side of a structure of an aircraft and positioning the other one of the heat source or the camera at a second side of the structure opposite the first side; applying heat to the least one of the first side or the second side of the structure; measuring thermal energy emitted from the other one of the first side or the second side opposite the heat source; and identifying a defect or inclusion of the structure based on the measured thermal energy.

Abstract: Techniques for determining a temperature measurement of a junction of a power switch are described. A current can be applied to a control node, e.g., gate terminal, of the power switch, such as a field-effect transistor (FET) or an insulated-gate bipolar transistor (IGBT), while the power switch is in a steady-state region in which a gate-to-source voltage (e.g., FET) or a gate-to-emitter voltage (e.g., IGBT) of the power switch is constant. While in the steady-state region, the temperature measurements can be performed, thereby ensuring accuracy of the measurement.

Abstract: The surface temperature of a portable device is estimated. The portable device includes a sensor for detecting the internal temperature of the portable device. The portable device also includes circuitry for estimating the surface temperature, using the internal temperature and an ambient temperature of the portable device as input to a circuit model. The circuit model describes thermal behaviors of the portable device. The circuitry is operative to identify a scenario in which the portable device operates, and determine the ambient temperature using the scenario and at least the internal temperature.

Abstract: Temperature monitoring devices have a primary body with an inner circular perimeter, a temperature monitoring segment held by the primary body, the temperature monitoring segment comprising an inwardly extending thermal probe, and a fastener assembly segment held by the primary body at a location that is circumferentially spaced apart from the temperature monitoring segment. The fastener assembly segment has a circumferentially extending bracket that can be radially extended in a direction that is toward the inner circular perimeter of the device.