Abstract: An object of the present invention is to provide a photosensitive resin composition that can form an insulating film having low dielectric constant and low dielectric loss tangent and undergoing small changes in elongation properties in response to changes in environmental temperature. The photosensitive resin composition of the present invention contains: a polymer (A) having a structural unit (a1) represented by Formula (a1); a crosslinking agent (B); a photocation generator (C); and a compound (D) represented by Formula (D).

Abstract: A photoresist composition comprising: a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group; a second polymer comprising a first repeating unit comprising an acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a base-soluble group, wherein the base-soluble group has a pKa of less than or equal to 12, and wherein the base-soluble group does not comprise a hydroxy-substituted aryl group; a photoacid generator; and a solvent, wherein the first polymer and the second polymer are different from each other.

Abstract: A resist underlayer film-forming composition in which a coating film having high flattening properties is formed on a substrate. A resist underlayer film-forming composition including an epoxy adduct (C) obtained by reacting an epoxy group-containing compound (A) with an epoxy adduct-forming compound (B), wherein one or both of the epoxy group-containing compound (A) and the epoxy adduct-forming compound (B) contain an optionally branched alkyl group having a carbon atom number of three or more. The epoxy adduct-forming compound (B) is at least one compound selected from the group consisting of carboxylic acid (B1), carboxylic anhydride (B2), a phenol compound (B3), a hydroxyl group-containing compound (B4), a thiol compound (B5), an amino compound (B6), and an imide compound (B7). The optionally branched alkyl group having a carbon atom number of three or more is contained in the epoxy adduct-forming compound (B). The optionally branched alkyl group has a C3-19 alkyl group.

Abstract: A hard-mask forming composition that forms a hard mask that is used in lithography, the hard-mask forming composition including at least one of a compound represented by General Formula (sc-1) and a resin having a partial structure represented by General Formula (sc-p1).

Abstract: A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure, a hydrocarbon structure, and a solvent. The compound may have the photodegradable nitrogen-containing and/or photodegradable sulfur-containing structure and the hydrocarbon structure in one molecule, or may be a combination of compounds which contain the structures in separate molecules.

Abstract: A resist underlayer film material contains: one or more compounds shown by the following general formula (1); and an organic solvent. W represents an organic group with a valency of “n” having 2 to 50 carbon atoms; X represents a terminal group structure shown by the following general formula (2) or (3); when a ratio of the structure of the following general formula (2) to that of (3) is “a” to “b”, “a” and “b” satisfy the relations 0.70?a?0.99 and 0.01?b?0.30. “n” represents an integer of 1 to 10. Z represents an aromatic group with a valency of (k+1) having 6 to 20 carbon atoms. “A” represents a single bond or —O—(CH2)p—. “k” represents an integer of 1 to 5. “p” represents an integer of 1 to 10. L represents a single bond or —(CH2)r—. “1” represents 2 or 3; and “r” represents an integer of 1 to 5.

Abstract: A resist composition including a base material component (A) whose solubility in a developing solution is changed due to an action of an acid, in which the base material component (A) contains a polymer compound (A1) having a constitutional unit (a1) represented by Formula (a1-1). In the formula, R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms, Vax1 represents a single bond or a divalent linking group, na0 represents an integer of 0 to 2, and R01 represents a methyl group or an ethyl group.

Abstract: Provided are a carboxylate capable of producing a resist pattern with satisfactory CD uniformity (CDU), and a resist composition. Disclosed are a carboxylate represented by formula (I) and a resist composition: wherein Ar represents an aromatic hydrocarbon group having 6 to 18 carbon atoms which may have a substituent, X1 represents an oxygen atom or a sulfur atom, R1 represents a halogen atom or a haloalkyl group having 1 to 12 carbon atoms, R2 represents a halogen atom, a hydroxy group, a haloalkyl group having 1 to 12 carbon atoms or an alkyl group having 1 to 12 carbon atoms, —CH2— included in the haloalkyl group and the alkyl group may be replaced by —O— or —CO—, m1 represents an integer of 1 to 6, m2 represents an integer of 0 to 4, and Z+ represents an organic cation.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist underlayer over a semiconductor substrate. The photoresist underlayer includes a polymer, including a main polymer chain having pendant target groups, and pendant organic groups or photoacid generator groups. The main polymer chain is a polystyrene, a polyhydroxystyrene, a polyacrylate, a polymethylacrylate, a polymethylmethacrylate, a polyacrylic acid, a polyvinyl ester, a polymaleic ester, a poly(methacrylonitrile), or a poly(methacrylamide). Pendant target groups are selected from the group consisting of a substituted or unsubstituted: C2-C30 diol group, C1-C30 aldehyde group, and C3-C30 ketone group. Pendant organic groups are C3-C30 aliphatic or aromatic groups having at least one photosensitive functional group, and pendant photoacid generator groups are C3-C50 substituted aliphatic or aromatic groups. A photoresist layer is formed over the photoresist underlayer.

Abstract: A radiation-sensitive resin composition includes a resin having a partial structure represented by formula (1). R1 and R2 each independently represent a substituted or unsubstituted chain aliphatic hydrocarbon group having 1 to 6 carbon atoms or a substituted or unsubstituted alicyclic hydrocarbon group having 3 to 6 carbon atoms, or R1 and R2 are bonded to each other to form a part of a 3- to 6-membered cyclic structure together with the carbon atom to which R1 and R2 are bonded; R3 represents a monovalent alicyclic hydrocarbon group having 4 to 20 carbon atoms and containing a fluorine atom. No fluorine atom is bonded to carbon atoms located at ?-, ?- and ?-positions of the carbon atom to which R1 and R2 are bonded; and No fluorine atom is bonded to carbon atoms located at ?- and ?-positions of the carbon atom to which R3 is bonded.

Abstract: A photoresist composition comprising a polymer, a photoacid generator, an additive comprising a tertiary carbon atom as a ring-forming atom of a lactone ring, and a solvent.

Abstract: A coating composition comprising a crosslinkable polyester polymer comprising an isocyanurate group and a crosslinkable group; a crosslinker; and an acid catalyst, wherein at least one of the crosslinkable polyester polymer and the crosslinker comprises an iodine-containing polymer.

Abstract: A positive resist material contains a base polymer containing: a repeating unit having two carboxyl groups whose hydrogen atoms are substituted with two tertiary carbon atoms each bonded to a double bond or triple bond; and a repeating unit having an acid generator shown by any of the following formulae (b1) to (b3). Thus, the present invention provides: a positive resist material having higher sensitivity than conventional positive resist materials, and smaller dimensional variation; and a patterning process using this inventive positive resist material.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin including a repeating unit represented by Formula (1) and capable of increasing a polarity by an action of an acid.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a repeating unit having a group in which a phenolic hydroxyl group is protected with an acid-leaving group; a first photoacid generator that generates an acid having a pKa of ?2.00 to 2.00, in which in a case where the acid thus generated is a carboxylic acid, a pKa of the carboxylic acid is ?2.00 or more and less than 1.00; and a second photoacid generator that generates a carboxylic acid having a pKa of 1.00 or more.

Abstract: Provided are a curable composition including a compound represented by Formula (1) or Formula (2), a curable compound, and a solvent; a film formed of the curable composition; a near-infrared cut filter; a solid-state imaging element; an image display device; an infrared sensor; and a camera module. In the formulae, X1 to X5 each independently represent O, S, or a dicyanomethylene group, and R1 to R5 each independently represent a group represented by Formula (R2), and the like, in which at least one of R1 or R2 is the group represented by Formula (R2) and at least one of R3 or R4 is the group represented by Formula (R2).

Abstract: There is provided a manufacturing method for a cured substance, which makes it possible to obtain a cured substance having excellent breaking elongation, a manufacturing method for a laminate, including the manufacturing method for a cured substance, a manufacturing method for a semiconductor device, including the manufacturing method for a cured substance or the manufacturing method for a laminate, and there is provided a treatment liquid that is used in the manufacturing method for a cured substance. The manufacturing method for a cured substance includes a film forming step of applying a resin composition containing a precursor of a cyclization resin onto a base material to form a film, a treatment step of bringing a treatment liquid into contact with the film, and a heating step of heating the film after the treatment step, in which the treatment liquid contains at least one compound selected from the group consisting of a basic compound having an amide group and a base generator having an amide group.

Abstract: Provided is a copolymer that can be favorably used as a main chain scission-type positive resist that has excellent heat resistance and that can form a resist pattern having excellent resolution and clarity. The copolymer includes a monomer unit (A) represented by the following formula (I) and a monomer unit (B) represented by the following formula (II), and has a molecular weight distribution of 1.7 or less. In the formulae, L is a single bond or a divalent linking group, Ar is an optionally substituted aromatic ring group, R1 is an alkyl group, R2 is an alkyl group, a halogen atom, or a haloalkyl group, p is an integer of not less than 0 and not more than 5, and in a case in which more than one R2 is present, each R2 may be the same or different.

Abstract: A method includes forming a photoresist layer over a wafer. The photoresist layer is exposed to a pattern of radiation using a photomask. The photoresist layer is developed after the photoresist layer is exposed to the pattern of radiation. The photomask includes a substrate and at least one opaque main feature. The substrate has a recessed region recessed from a first surface of the substrate and has a first width. The at least one opaque main feature protrudes from the first surface of the substrate and has a second width greater than the first width of the recessed region of the substrate. A height of the at least one opaque main feature is greater than a depth of the recess region of the substrate.

Abstract: A resist composition that contains a base material component exhibiting changed solubility in a developing solution under action of acid and a compound (D0) represented by General Formula (d0), in which R01, R02, R03, and R04 each independently represents a hydrogen atom, a hydroxy group, a halogen atom, or an alkyl group; alternatively, R01 and R02, R02 and R03, or R03 and R04 are bonded to each other to form an aromatic ring; R05 represents a hydrogen atom or an alkyl group; Y represents a group that forms an alicyclic group together with a carbon atom *C; provided that at least one of the carbon atoms that form the alicyclic group is substituted with an ether bond, a thioether bond, a carbonyl group, a sulfinyl group, or a sulfonyl group; m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation.