Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a repeating unit having a group in which a phenolic hydroxyl group is protected with an acid-leaving group; a first photoacid generator that generates an acid having a pKa of ?2.00 to 2.00, in which in a case where the acid thus generated is a carboxylic acid, a pKa of the carboxylic acid is ?2.00 or more and less than 1.00; and a second photoacid generator that generates a carboxylic acid having a pKa of 1.00 or more.

Abstract: Provided are a curable composition including a compound represented by Formula (1) or Formula (2), a curable compound, and a solvent; a film formed of the curable composition; a near-infrared cut filter; a solid-state imaging element; an image display device; an infrared sensor; and a camera module. In the formulae, X1 to X5 each independently represent O, S, or a dicyanomethylene group, and R1 to R5 each independently represent a group represented by Formula (R2), and the like, in which at least one of R1 or R2 is the group represented by Formula (R2) and at least one of R3 or R4 is the group represented by Formula (R2).

Abstract: There is provided a manufacturing method for a cured substance, which makes it possible to obtain a cured substance having excellent breaking elongation, a manufacturing method for a laminate, including the manufacturing method for a cured substance, a manufacturing method for a semiconductor device, including the manufacturing method for a cured substance or the manufacturing method for a laminate, and there is provided a treatment liquid that is used in the manufacturing method for a cured substance. The manufacturing method for a cured substance includes a film forming step of applying a resin composition containing a precursor of a cyclization resin onto a base material to form a film, a treatment step of bringing a treatment liquid into contact with the film, and a heating step of heating the film after the treatment step, in which the treatment liquid contains at least one compound selected from the group consisting of a basic compound having an amide group and a base generator having an amide group.

Abstract: Provided is a copolymer that can be favorably used as a main chain scission-type positive resist that has excellent heat resistance and that can form a resist pattern having excellent resolution and clarity. The copolymer includes a monomer unit (A) represented by the following formula (I) and a monomer unit (B) represented by the following formula (II), and has a molecular weight distribution of 1.7 or less. In the formulae, L is a single bond or a divalent linking group, Ar is an optionally substituted aromatic ring group, R1 is an alkyl group, R2 is an alkyl group, a halogen atom, or a haloalkyl group, p is an integer of not less than 0 and not more than 5, and in a case in which more than one R2 is present, each R2 may be the same or different.

Abstract: A method includes forming a photoresist layer over a wafer. The photoresist layer is exposed to a pattern of radiation using a photomask. The photoresist layer is developed after the photoresist layer is exposed to the pattern of radiation. The photomask includes a substrate and at least one opaque main feature. The substrate has a recessed region recessed from a first surface of the substrate and has a first width. The at least one opaque main feature protrudes from the first surface of the substrate and has a second width greater than the first width of the recessed region of the substrate. A height of the at least one opaque main feature is greater than a depth of the recess region of the substrate.

Abstract: A resist composition that contains a base material component exhibiting changed solubility in a developing solution under action of acid and a compound (D0) represented by General Formula (d0), in which R01, R02, R03, and R04 each independently represents a hydrogen atom, a hydroxy group, a halogen atom, or an alkyl group; alternatively, R01 and R02, R02 and R03, or R03 and R04 are bonded to each other to form an aromatic ring; R05 represents a hydrogen atom or an alkyl group; Y represents a group that forms an alicyclic group together with a carbon atom *C; provided that at least one of the carbon atoms that form the alicyclic group is substituted with an ether bond, a thioether bond, a carbonyl group, a sulfinyl group, or a sulfonyl group; m represents an integer of 1 or more, and Mm+ represents an m-valent organic cation.

Abstract: The present invention relates to a method for manufacturing a part comprising at least one three-dimensional metallised pattern overlying a local enamel underlayer.

Abstract: A material for forming an organic film, including: a polymer having a structure shown by the following general formula (1A) as a partial structure; and an organic solvent, where in the general formula (1A), W1 represents a tetravalent organic group, W2 represents a single bond or a linking group shown by the following formula (1B), R1 represents a hydrogen atom or a monovalent organic group having 1 to 10 carbon atoms, n1 represents an integer of 0 or 1, and n2 and n3 satisfy 0?n2?6,0?n3?6, and 1?n2+n3?6, and where R2 and R3 each independently represent hydrogen or an organic group having 1 to 30 carbon atoms, and the organic group R2 and the organic group R3 optionally bond to each other within a molecule to form a cyclic organic group.

Abstract: A chemically amplified resist composition is provided comprising an acid generator and a quencher comprising a salt compound consisting of a nitrogen-containing cation and a 1,1,1,3,3,3-hexafluoro-2-propoxide anion having a trifluoromethyl, hydrocarbylcarbonyl or hydrocarbyloxycarbonyl group bonded thereto. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: A resist composition that contains a base material component (A), a first acid generator, and a second acid generator, the first acid generator is a compound represented by General Formula (b1), the second acid generator is a compound (B2) having an anion moiety having a molar volume of 250 cm3/mol or less, and the molar volume of the anion moiety of the compound (B2) is smaller than the molar volume of the anion moiety of the compound (B1). In the formula, Rb0 represents a specific condensed cyclic group, Yb0 represents a divalent linking group, Vb0 represents a single bond, Rc1 represents an aryl group having an electron-withdrawing group, Rc2 and Rc3 each independently represent an aryl group or are bonded to each other to form a ring together with a sulfur atom in the formula.

Abstract: A resist composition comprising a base polymer and a quencher in the form of a heterocyclic amine compound having a tertiary ester structure offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

Abstract: A radiation-sensitive composition contains: particles that include a metal oxide, a cation that includes a metal, an anion. The anion is preferably a conjugated base of an acid and the acid has preferably a pKa of no greater than 3. The content of the particles in terms of solid content equivalent is preferably no less than 50% by mass, and more preferably no less than 70% by mass. The hydrodynamic radius of the particles as determined by a dynamic light scattering analysis is preferably no greater than 10 nm. The total content of the cation and the anion with respect to 100 parts by mass of the particles is preferably no less than 5 parts by mass. The acid is preferably sulfonic acid, nitric acid, organic azinic acid, disulfonylimidic acid or a combination thereof.

Abstract: A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate, a hard mask layer formed over the bottom layer, a material layer formed over the hard mask layer, and a photoresist layer formed over the material layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, where the developing removes portions of the photoresist layer and the material layer in a single step without substantially removing portions of the hard mask layer, and etching the hard mask layer using the photoresist layer as an etch mask. The material layer may include acidic moieties and/or acid-generating molecules. The material layer may also include photo-sensitive moieties and crosslinking agents.

Abstract: An alternating copolymer including a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a0-2) represented by general formula (a0-2) in which Rp01 represents a hydrogen atom or the like; Vp01 represents a single bond or a divalent linking group; Rp02 and Rp03 each independently represents a hydrocarbon group which may have a substituent, or Rp02 and Rp03 are mutually bonded to form a ring; Rp04 represents a hydrogen atom, a C1-C5 alkyl group or a C1-C5 halogenated alkyl group; Rp05 represents an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a cyano group or a hydroxy group; Rp06 represents a linear or branched aliphatic hydrocarbon group; and m represents an integer of 0 to 4

Abstract: A resist composition comprising an iodized base polymer and an iodized benzene ring-containing quencher has a high sensitivity and improved LWR and CDU.

Abstract: Provided is an anti-reflection coating composition. The anti-reflection coating composition includes an active component and a solvent B. The active component includes a matting resin A, a catalyst C, and a crosslinking agent D. The weight average molecular weight of the matting resin A is less than or equal to 20000. Also provided is use of the anti-reflection coating composition.

Abstract: Embodiments provided herewith are directed to self-assembled methods of preparing a patterned surface for sequencing applications including, for example, a patterned flow cell or a patterned surface for digital fluidic devices. The methods utilize photolithography to create a patterned surface with a plurality of microscale or nanoscale contours, separated by hydrophobic interstitial regions, without the need of oxygen plasma treatment during the photolithography process. In addition, the methods avoid the use of any chemical or mechanical polishing steps after the deposition of a gel material to the contours.

Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.

Abstract: A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more, A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)??Formula(1) Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.

Abstract: An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate.