Abstract: A chemically amplified resist composition is provided comprising an acid generator and a quencher comprising a salt compound consisting of a nitrogen-containing cation and a 1,1,1,3,3,3-hexafluoro-2-propoxide anion having a trifluoromethyl, hydrocarbylcarbonyl or hydrocarbyloxycarbonyl group bonded thereto. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: A resist composition that contains a base material component (A), a first acid generator, and a second acid generator, the first acid generator is a compound represented by General Formula (b1), the second acid generator is a compound (B2) having an anion moiety having a molar volume of 250 cm3/mol or less, and the molar volume of the anion moiety of the compound (B2) is smaller than the molar volume of the anion moiety of the compound (B1). In the formula, Rb0 represents a specific condensed cyclic group, Yb0 represents a divalent linking group, Vb0 represents a single bond, Rc1 represents an aryl group having an electron-withdrawing group, Rc2 and Rc3 each independently represent an aryl group or are bonded to each other to form a ring together with a sulfur atom in the formula.

Abstract: A resist composition comprising a base polymer and a quencher in the form of a heterocyclic amine compound having a tertiary ester structure offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

Abstract: A radiation-sensitive composition contains: particles that include a metal oxide, a cation that includes a metal, an anion. The anion is preferably a conjugated base of an acid and the acid has preferably a pKa of no greater than 3. The content of the particles in terms of solid content equivalent is preferably no less than 50% by mass, and more preferably no less than 70% by mass. The hydrodynamic radius of the particles as determined by a dynamic light scattering analysis is preferably no greater than 10 nm. The total content of the cation and the anion with respect to 100 parts by mass of the particles is preferably no less than 5 parts by mass. The acid is preferably sulfonic acid, nitric acid, organic azinic acid, disulfonylimidic acid or a combination thereof.

Abstract: A method includes providing a layered structure on a substrate, the layered structure including a bottom layer formed over the substrate, a hard mask layer formed over the bottom layer, a material layer formed over the hard mask layer, and a photoresist layer formed over the material layer, exposing the photoresist layer to a radiation source, developing the photoresist layer, where the developing removes portions of the photoresist layer and the material layer in a single step without substantially removing portions of the hard mask layer, and etching the hard mask layer using the photoresist layer as an etch mask. The material layer may include acidic moieties and/or acid-generating molecules. The material layer may also include photo-sensitive moieties and crosslinking agents.

Abstract: An alternating copolymer including a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a0-2) represented by general formula (a0-2) in which Rp01 represents a hydrogen atom or the like; Vp01 represents a single bond or a divalent linking group; Rp02 and Rp03 each independently represents a hydrocarbon group which may have a substituent, or Rp02 and Rp03 are mutually bonded to form a ring; Rp04 represents a hydrogen atom, a C1-C5 alkyl group or a C1-C5 halogenated alkyl group; Rp05 represents an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a cyano group or a hydroxy group; Rp06 represents a linear or branched aliphatic hydrocarbon group; and m represents an integer of 0 to 4

Abstract: A resist composition comprising an iodized base polymer and an iodized benzene ring-containing quencher has a high sensitivity and improved LWR and CDU.

Abstract: Provided is an anti-reflection coating composition. The anti-reflection coating composition includes an active component and a solvent B. The active component includes a matting resin A, a catalyst C, and a crosslinking agent D. The weight average molecular weight of the matting resin A is less than or equal to 20000. Also provided is use of the anti-reflection coating composition.

Abstract: A method includes forming a bottom layer over a semiconductor substrate, where the bottom layer includes a polymer bonded to a first cross-linker and a second cross-linker, the first cross-linker being configured to be activated by ultraviolet (UV) radiation and the second cross-linker being configured to be activated by heat at a first temperature. The method then proceeds to exposing the bottom layer to a UV source to activate the first cross-linker, resulting in an exposed bottom layer, where the exposing activates the first cross-linker. The method further includes baking the exposed bottom layer, where the baking activates the second cross-linker.

Abstract: A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Requirements 1 to 3, Requirement 1: The A value determined by Formula (1) is 0.14 or more, A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)??Formula(1) Requirement 2: The concentration of solid contents in the photosensitive composition for EUV light is 5.0% by mass or less, Requirement 3: The content of the photoacid generator is 5% to 50% by mass with respect to the total solid content in the photosensitive composition for EUV light.

Abstract: Embodiments provided herewith are directed to self-assembled methods of preparing a patterned surface for sequencing applications including, for example, a patterned flow cell or a patterned surface for digital fluidic devices. The methods utilize photolithography to create a patterned surface with a plurality of microscale or nanoscale contours, separated by hydrophobic interstitial regions, without the need of oxygen plasma treatment during the photolithography process. In addition, the methods avoid the use of any chemical or mechanical polishing steps after the deposition of a gel material to the contours.

Abstract: An object of the present invention is to provide: a compound containing an imide group which is not only cured under film formation conditions of inert gas as well as air, generates no by-product and has excellent heat resistance and properties of filling and planarizing a pattern formed on a substrate, but can also form an organic underlayer film with favorable adhesion to a substrate.

Abstract: The present invention can provide a salt capable of producing a resist pattern with satisfactory CD uniformity (CDU), and a resist composition.

Abstract: A photocurable composition for forming coating film having flattening properties on a substrate, with high fillability into patterns and capability of forming a coating film that is free from thermal shrinkage, which contains at least one compound that contains a photodegradable nitrogen-containing and/or sulfur-containing structure, a hydrocarbon structure, and a solvent. A compound which contains at least one photodegradable structure in one molecule. A compound which contains the photodegradable structures, and the hydrocarbon structure in one molecule, or a combination of compounds which contain the structures in separate molecules. The hydrocarbon structure is a saturated or unsaturated, linear, branched or cyclic hydrocarbon group having a carbon atom number of 1 to 40.

Abstract: A material for forming an organic film contains a polymer having a repeating unit shown by the following general formula (1), and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; W1 represents a divalent organic group having 2 to 20 carbon atoms and no aromatic ring, and a methylene group constituting the organic group is optionally substituted with an oxygen atom or a carbonyl group; and W2 represents a divalent organic group having 6 to 80 carbon atoms and at least one or more aromatic rings. This invention provides: an organic film material being excellent in film formability and enabling high etching resistance and excellent twisting resistance and filling property; a patterning process using this material; and a polymer suitable for such an organic film material.

Abstract: The composition contains a compound and a solvent. The compound includes a group represented by formula (1). The compound has a molecular weight of no less than 200 and has a percentage content of carbon atoms of no less than 40% by mass. In the formula (1), R1 and R2 each independently represent a hydrogen atom, a fluorine atom, a monovalent hydrocarbon group having 1 to 20 carbon atoms or a monovalent fluorinated hydrocarbon group having 1 to 20 carbon atoms, or R1 and R2 taken together represent a part of an alicyclic structure having 3 to 20 ring atoms constituted together with the carbon atom to which R1 and R2 bond; Ar1 represents a group obtained by removing (n+3) hydrogen atoms from an arene or heteroarene having 6 to 20 ring atoms; and X represents an oxygen atom, —CR3R4—, —CR3R4—O— or —O—CR3R4—.

Abstract: A composition comprising (A) a polymer comprising recurring units (a1) having a carboxyl group protected with an acid labile group and recurring units (a2) having a cyclic ester, cyclic carbonate or cyclic sulfonate structure, (B) a thermal acid generator, and (C) an organic solvent is suited to form a protective film between a substrate and a resist film. Even when a metal-containing resist film is used, the protective film is effective for preventing the substrate from metal contamination.

Abstract: There is provided a highly sensitive colorant-containing photosensitive resin composition that can form an excellent crack resistant cured product for use in the formation of organic EL element barrier ribs. One embodiment of the photosensitive resin composition for use in organic EL element barrier ribs comprises: (A) a binder resin; (B) a phenolic hydroxyl group-containing compound having a molecular weight of 260 to 5,000 and a phenolic hydroxyl group equivalent of 80 to 155; (C) a radiation sensitive compound; and (D) a colorant selected from the group consisting of black dyes and black pigments.

Abstract: A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Conditions 1 and 2, Condition 1: The A value determined by Formula (1) is 0.14 or more, A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)??Formula (1): Condition 2: The concentration of the solid content in the photosensitive composition for EUV light is 2.5% by mass or less.

Abstract: A resin composition includes a resin A, a resin C, and a solvent. The resin A includes a sulfonic-acid-group-containing structural unit in an amount exceeding 5 mol % with respect to total structural units included in the resin A. The resin A has a content of a fluorine atom of 30 mass % or less with respect to a total mass of the resin A. The resin C includes a fluorine atom in a larger content per unit mass than the content of a fluorine atom per unit mass in the resin A. A content of the resin A in the resin composition is lower than a content of the resin C in the resin composition in terms of mass.