Patents Examined by Norman Morgenstern
  • Patent number: 5019552
    Abstract: A method of depositing thin films by means of laser vaporization employs a long-pulse laser (Nd-glass of about one millisecond duration) with a peak power density typically in the range 10.sup.5 -10.sup.6 W/cm.sup.2. The method may be used to produce high T.sub.c superconducting films of perovskite material. In one embodiment, a few hundred nanometers thick film of YBa.sub.2 Cu.sub.3 O.sub.7-x is produced on a SrTiO.sub.3 crystal substrate in one or two pulses. In situ-recrystallization and post-annealing, both at elevated temperature and in the presence of an oxidizing agenThe invention described herein arose in the course of, or under, Contract No. DE-C03-76SF0098 between the United States Department of Energy and the University of California.
    Type: Grant
    Filed: February 20, 1990
    Date of Patent: May 28, 1991
    Assignee: The United States of America as represented by the United States Department of Energy
    Inventors: Mehdi Balooch, Donald K. Olander, Richard E. Russo
  • Patent number: 5016563
    Abstract: In a method of manufacturing a thin film of a compound oxide, different types of materials for forming the compound oxide are evaporated in vacuum. The evaporated materials are heated and deposited on a substrate to form a thin film. An oxygen ion beam having energy of 10 to 200 eV is implanted in the thin film which is being formed on the substrate. Alignment of the constituting elements is performed on the basis of a substrate temperature and energy of the oxygen ion beam, thereby causing epitaxial growth.
    Type: Grant
    Filed: August 29, 1989
    Date of Patent: May 21, 1991
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Toshiaki Murakami, Kazuyuki Moriwaki
  • Patent number: 5016567
    Abstract: A heat treatment apparatus used in the manufacturing of semiconductor devices and the like, for treating with a reaction gas substrates placed in a reaction tube of the apparatus. A support table is provided within the reaction tube, for supporting substrates during a treatment process, and is rotated during each treatment by a motor, via a shaft penetrating the reaction tube. That portion of the reaction tube which is penetrated by the shaft is provided with a journal bearing and a magnetic fluid seal member. The seal member is surrounded by an enclosing space which substantially separates the seal member from the reaction space within the reaction tube, the enclosing space and the reaction space communicating with each other via a narrow passage. During a heat treatment, a shield gas is supplied into the enclosing space, the pressure within the enclosing space being maintained at a higher level than that within the reaction space.
    Type: Grant
    Filed: August 17, 1989
    Date of Patent: May 21, 1991
    Assignee: Tel Sagami Limited
    Inventors: Katsuhiko Iwabuchi, Osamu Yokokawa, Eiichiro Takanabe
  • Patent number: 5016565
    Abstract: A microwave plasma CVD apparatus for forming a functional deposited film comprises a film-forming chamber having a discharge space, a substrate holder, and apparatus for introducing a film-forming raw material gas into the film-forming chamber, for transmitting microwaves into the film-forming chamber to apply microwave energy to the raw material gas so that the raw material gas is converted into plasma, and for simultaneously applying a bias voltage to the plasma generated in the discharge space from an external system to control the plasma potential. A mechanism is provided for temporarily suspending the application of the bias voltage in the case when abnormal discharge occurs, while monitoring the fluctuation of the bias voltage to be applied to the plasma, to thereby inhibit the occurrence of abnormal discharge.
    Type: Grant
    Filed: August 29, 1989
    Date of Patent: May 21, 1991
    Assignee: Canon Kabushiki Kaisha
    Inventors: Keishi Saitoh, Ryuji Okamura, Hirokazu Otoshi, Koichi Matsuda
  • Patent number: 5017550
    Abstract: A thin film of an oxide superconductor having a homogeneous composition and less oxygen defects is produced by independently vaporizing onto a substrate at least one material selected from the group consisting of the elements of Ia, IIa and IIIa groups of the periodic table and their compounds and one material selected from the group consisting of Cu and its compounds and irradiating the substrate with oxygen ions and depositing the vaporized materials together with oxygen on the substrate to form the thin film of the oxide superconductor.
    Type: Grant
    Filed: March 30, 1988
    Date of Patent: May 21, 1991
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Jun Shioya, Yoichi Yamaguchi, Akira Mizoguchi, Noriyuki Yoshida, Kenichi Takahashi, Kenji Miyazaki, Satoshi Takano, Noriki Hayashi
  • Patent number: 5017403
    Abstract: A planarization process and apparatus which employs plasma-enhanced chemical vapor deposition (PECVD) to form plarnarization films of dielectric or conductive carbonaceous material on step-like substrates.
    Type: Grant
    Filed: April 13, 1989
    Date of Patent: May 21, 1991
    Assignee: Massachusetts Institute of Technology
    Inventors: Stella W. Pang, Mark W. Horn
  • Patent number: 5017404
    Abstract: A plasma process and apparatus are provided for coating one or more planar substrates by a plasma-induced chemical vapor deposition in which plasma electrodes provide a plurality of overlapping plasma columns which extend over the entire surface of the substrate to be coated. A plurality of plasma electrodes are fixed in planes above, between, or below the substrates, and the individual plasma electrodes can be separately controlled. With a plasma pulse/CVD process, the spacing and angle between the substrates can be varied to alter the thickness of the coating. The process can be used for coating large area, planar vitreous bodies with multilayer optical coatings.
    Type: Grant
    Filed: September 6, 1989
    Date of Patent: May 21, 1991
    Assignee: Schott Glaswerke
    Inventors: Volker Paquet, Ulrich Ackermann, Heniz-W. Etzkorn, Ralf T. Kersten, Uwe Rutze
  • Patent number: 5015621
    Abstract: A superconducting ceramic powder of Bi/Sr/Ca/Cu/O system are formed in a film and the c-axes are uniformly aligned with the normal of the film. The alignment of the axes is accomplished by dripping ethylalcohol containing the ceramic powder into ethyl alcohol contained in a reservoir. The ceramic powder is settled on a substrate arranged in the reservoir in film form. After removing ethylalcohol, the ceramic film is fired.
    Type: Grant
    Filed: May 24, 1989
    Date of Patent: May 14, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Yasuhiko Takemura
  • Patent number: 5015620
    Abstract: A high-T.sub.c superconductor contact unit having low interface resistivity is disclosed, as is a method for making the unit. An inert metal is deposited on the surface of the superconductor, which surface is preferably non-degraded, to form a unit with the surface of the superconductor, and where temperatures as high as 500.degree. C. to 700.degree. C. can be tolerated, the unit is oxygen annealed to establish a still lower surface resistivity between the surface of the high-T.sub.c superconductor and the inert metal, including a low surface resistivity of about 10.sup.-10 .OMEGA.-cm.sup.2 at high-T.sub.c superconductor operating temperatures. The superconductor is a metal-oxide superconductor, and may be rare earth, thallium, or bismuth based.
    Type: Grant
    Filed: November 22, 1988
    Date of Patent: May 14, 1991
    Assignees: The United States of America as represented by the Secretary of Commerce, Westinghouse Electric Corporation
    Inventors: John W. Ekin, Armand J. Panson, Betty A. Blankenship
  • Patent number: 5015493
    Abstract: A process and apparatus for coating conductive workpieces by ionized vapors with the assistance of a glow discharge includes providing a periodically pulsed input of energy for the discharge so that stress on the parts is reduced and a smooth coating results. Either a constant or periodic magnetic field is superimposed to influence the coating process for better results and better handling.
    Type: Grant
    Filed: January 11, 1988
    Date of Patent: May 14, 1991
    Inventor: Reinar Gruen
  • Patent number: 5015508
    Abstract: Following the application of plastic extrudate to transmission medium being moved along a path of travel to provide an insulative covering, the covered medium is moved through a cooling medium and then through an air wipe device (20). The air wipe device, which is effective to remove any of the cooling medium remaining on an outer surface of the cover, comprises a helically extending manifold (42). Spaced along inner surfaces (51, 52) of the manifold are a plurality of sets of orifices (50--50) from which air is directed into engagement with the moving transmission medium. Each set of orifices is arranged to direct streams of air toward the path of travel and hence into engagement with the transmission medium in a manner such that cooling medium is removed from the entire outer surface of the transmission medium. Also each set of orifices is such that the air which is directed toward the moving transmission media does not reengage the air wipe device.
    Type: Grant
    Filed: August 25, 1989
    Date of Patent: May 14, 1991
    Assignee: AT&T Bell Laboratories
    Inventor: Jerry L. Glenn
  • Patent number: 5015494
    Abstract: A cyclotron resonance chemical vapor deposition method of making a diamond or diamond-like material on a substrate characterized by the use of a higher pressure range of 0.1 to 300 torr, where the substrate is approximately positioned where a standing wave of the applied microwave established in a reaction chamber attains a maximum value.
    Type: Grant
    Filed: March 28, 1989
    Date of Patent: May 14, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 5013580
    Abstract: Video recording/play-back heads concerning rotating heads subjected to wear are disclosed. The structure of this head is such that the active part of the magnetic head as well as the drum are coated with a wear-resistant layer.
    Type: Grant
    Filed: October 26, 1988
    Date of Patent: May 7, 1991
    Assignee: Thomson-CSF
    Inventors: Paul-Louis Meunier, Jean-Marie Mackowski, Jean-Luc Rolland
  • Patent number: 5013579
    Abstract: A cyclotron resonance chemical vapor deposition method for coating mechanical component parts, in which the method is particularly advantageous in coating for parts having substantially flat surfaces and corners which are subject to wear. The method includes disposing the parts in a reaction chamber, inputting a reactive gas into the reaction chamber and exciting the reactive gas in the reaction chamber by applying microwave electromagnetic energy in the presence of a magnetic field. A layer is deposited on the corners and flat surfaces of the parts by chemical vapor reaction such that the layer at the corners is thicker than that on the flat surfaces due to the concentration of the electric field at the corners, thus providing more wear resistance at the corners.
    Type: Grant
    Filed: September 26, 1989
    Date of Patent: May 7, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shunpei Yamazaki
  • Patent number: 5013399
    Abstract: A method of preparing a support for a lithographic printing plate is described, which comprises roughening the support surface by laser irradiation performed under the condition that the support is placed in a liquid or in a gaseous atmosphere, thereby achieving improved stain resistance upon printing and excellent printing press life.
    Type: Grant
    Filed: October 16, 1989
    Date of Patent: May 7, 1991
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Akio Uesugi, Tsutomu Kakei, Shinichiro Minato
  • Patent number: 5011710
    Abstract: Surfaces of a structure are treated from a walkway within an enclosure suspended from the structure. The enclosure has a downwardly-converging cross section terminating in a vacuum conveyor for collecting and removing particles accumulating from the blasting process. The enclosure is preferably provided in modules. The vacuum conveyor removes the particulate material for transfer to conventional separating and re-cycling equipment. the enclosure and walkway are moveably suspended from transverse guideways secured to the structure.
    Type: Grant
    Filed: November 10, 1988
    Date of Patent: April 30, 1991
    Inventor: John F. Harrison
  • Patent number: 5010842
    Abstract: Apparatus for forming a thin film on a substrate surface by a CVD (Chemical Vapor Deposition) method which includes diffusing pipes for diffusing and supplying a first reactive gas, and uniformizing plates for supplying uniformly an active species formed through excitation of a second reactive gas. The first reactive gas and the active species are mixed uniformly with each other, and the resultant uniform mixture is supplied uniformly to the substrate surface, whereby a uniform film deposition rate is obtained in a reaction zone in which the thin film is formed, and a uniform thin film is formed over the entire substrate surface even when the area of the substrate surface is large.
    Type: Grant
    Filed: June 7, 1989
    Date of Patent: April 30, 1991
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Masao Oda, Yoshimi Kinoshita, Masahiro Hayama
  • Patent number: 5011823
    Abstract: Superconductive oxide bodies such as wires, ribbons, rods, and other bulk bodies can be fabricated by a process that comprises melting precursor material, cooling at least of the melt such that a solid body of a desired shape results, and heat treating the solid body in an oxygen-containing atmosphere. The precursor material exemplarily is in the form of pressed superconductive oxide powder. The re-solidified superconductive material is relatively dense, typically textured, with relatively large grain size, and has improved properties, e.g., higher critical current density. An exemplary technique for melting of the precursor material is zone melting.
    Type: Grant
    Filed: November 27, 1987
    Date of Patent: April 30, 1991
    Assignee: AT&T Bell Laboratories
    Inventors: Sungho Jin, Richard C. Sherwood, Thomas H. Tiefel
  • Patent number: 5009937
    Abstract: A composition for controlling sapstain and mold on wood having 20% more of moisture comprises an aqueous solution containing at least 0.05% by weight of chlorothalonil and borax in a quantity between 3 and 9 times greater than the weight of the chlorothalonil. The composition is applied to wood by dipping or spraying.
    Type: Grant
    Filed: September 7, 1989
    Date of Patent: April 23, 1991
    Assignee: Chapman Chemical Company
    Inventors: Michael H. West, Gregg Overman
  • Patent number: RE33599
    Abstract: A process and product is presented for obtaining selective areas of distinctive appearance, i.e., matting on synthetic coverings. This process includes, depositing a polymer coating which contains at least one first initiator for polymerization onto at least a first selected area or zone on an expandable or nonexpandable support substrate. Next, at least one second coating comprised of a crosslinkable monomer containing at least one second polymerization initiator is deposited onto a second selected area on the substrate. This second area or zone may encompass at least a portion of the first area. The first and second initiators should be triggered by distinct "spectral zones", i.e., a range of temperature conditions, frequency conditions, etc. capable of decomposing the initiator to form free radicals or ions needed for chain propagation in a polymerization reaction.
    Type: Grant
    Filed: September 11, 1987
    Date of Patent: May 28, 1991
    Assignee: Eurofloor S.A.
    Inventors: Jean-Francois Courtoy, Daniel Marchal