Abstract: Chromium dioxide is deposited as a ferromagnetic layer onto selected portions of a substrate or over the entire substrate. Chromium hexacarbonyl vapor is introduced into a vacuum deposition chamber at e.g. 10 milliTorr and oxygen is introduced at e.g. 15 to 100 milliTorr. A UV laser beam is focused onto the substrate to form the CrO.sub.2 layer photolytically. The CrO.sub.2 layer can also be deposited by RF plasma deposition. This technique can also be employed for depositing MoC.sub.2, WC.sub.2, Mo.sub.2 .phi..sub.3, MoO.sub.2 or WO.sub.2. Magnetic recording or memory devices are produced without the high failure rate typical of the prior art sputtering technique.

Abstract: A method for manufacturing metallic structures on inorganic non-conductive substrates, in which desired structures to be produced on the upper faces of the substrates are covered with screen means and the objects are then subjected to the action of reactive halogen-containing gases in a glow-discharge zone. Then the screen means are removed from the objects and they are metallized by known physical methods.

Abstract: An apparatus for growing a compound semiconductor layer by metal organic chemical vapor deposition (MOCVD) is disclosed. Utilizing the apparatus, the semiconductor layer of uniform thickness and uniform composition can be grown. The apparatus includes a plurality of vent pipes which spout a mixed gas of source material gases and a dilution gas into a reactor chamber, vertical to a substrate surface. The apparatus also includes a gas supply system in which a gas flow rate through each vent pipe is made to be controllable individually by a flow controlling device. In addition, a controller is operatively connected to the flow controlling devices, so that automatic growth of a semiconductor layer of a high quality can be achieved. When two source material gases used are mutually too reactive and deposits are formed within the gas supply system, two separate gas supply systems for these two gases are demonstrated to be effective.

Abstract: An apparatus for the treatment of wafers in the manufacture of semiconductor elements in the form of a process buffer through which a plurality of wafers travel at the same time to various treatment stations and which cooperates with a transport apparatus for the wafers. The apparatus has a shaft magazine, in which the treatment stations, each for one wafer, are disposed spaced apart from and above one another. The shaft magazine is provided with a loading and unloading opening, and the treatment stations are movable individually into the vicinity of the loading and unloading opening. The apparatus occupies less surface area in the process line for the manufacture of semiconductor elements, enables treatment of the wafers independent of external factors, and can be used for various types of treatment of the wafers in the manufacture of semiconductor elements.

Abstract: A process for producing a protective film on a magnesium based metallic substrate comprising producing successive deposits by vapor phase chemical deposition of at least one intermediate layer of metallic aluminum, and at least one surface layer of metallic oxide, and for the intermediate aluminum layer using a precursor chosen of triisobutylaluminum, heating the substrate to a temperature between 250.degree. C. and 320.degree. C., and for the surface layer selecting an appropriate precursor, heating the substrate to an appropriate temperature and introducing the precursor vapor to produce a protective film having a high surface hardness and strong adherence to the magnesium based substrate with high inertness in the electrochemical series, and forming an effective protection under both static and dynamic conditions.

Abstract: Methods for selectively applying a diffusion aluminide coating to the surface of a metal article while keeping other article surfaces free of the coating are described. The method includes the steps of injection molding a mixture of materials onto the surfaces which are to be kept free of coating; the material comprises solid particles effective in preventing deposition of the coating onto the surfaces and a moldable amorphous thermoplastic resin; it contains no volatilizable solvents. The mixture is applied to the article surface to a thickness of about 5 millimeters. It is useful in pack diffusion as well as vapor phase diffusion aluminide coating operations.

Abstract: A process is disclosed for forming a substantially pure layer of an implantable element in a substrate material by (a) selecting an implantable element and a substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation.

Abstract: In a vacuum evaporation method for depositing a thin film on a substrate by heating a sublimable source material under vacuum to vaporize it, the source material is subjectd to vaporization in an unsintered state. Electron-beam heating may be employed. The primary advantage of avoiding precedent sintering of the source material is great reduction in scattering of fine particles of the source material in the vacuum chamber. Consequently the deposited film has an even and smooth surface. A representative of the sublimable source material is a II-VI compound semiconductor such as ZnS used as the host material of an electroluminescent phosphor. Thin-film electroluminsecent devices produced by using the vacuum evaporation method according to the invention possess improved reliability.

Abstract: The present invention pertains to a method of preparing particles of superconducting ceramic powders, which method comprises:(a) dissolving the soluble salts of the cations in aqueous medium;(b) obtaining a solution having pH of between about 4 and 7 by optionally treating the aqueous medium with ammonia, or ammonium hydroxide;(c) atomizing the solution of step (b) onto liquid nitrogen at about -196.degree. C.;(d) removing the liquid nitrogen by evaporation;(e) removing the water by sublimation at reduced pressure;(f) heating the solid residue of step (e) at 40-60.degree. C. at reduced pressure;(g) calcining the solid residue in flowing oxygen or air at temperature of between about 200.degree. to 895.degree. C.; and(h) cooling the solid at a temperature of between about 900.degree. C. and ambient temperature in sufficient air or oxygen and recovering the superconducting powder having an average diameter of between about 0.1 and 10 microns.

Abstract: The invention comprises applying to a substrate a precursor of an organo-metallic compound, the precursor preferably consists of one or more pairs of ligand substituted Group III and V elements. The precursor is decomposed and deposits onto a receiving layer held at the decomposing temperature of the vaporized material.

Abstract: The conductivity of ground ferrophosphorus particles is increased by contacting the particles with an aqueous solution of hypophosphorus acid, preferably at a temperature between room temperature and about 50.degree.C. The particles are then washed and dried and can be mixed with resinous binders to formulate coating compositions. The coating compositions are particularly useful for coating galvanized steel that is to be welded.

Abstract: A cyclotron resonance chemical vapor deposition method of making a boron nitride or a boron nitride in combination with carbon on a substrate, characterized by the use of a higher pressure range of 0.1 to 300 torr, where the substrate is substantially positioned where a standing wave of the applied microwave established in a reaction chamber attains a maximum value.

Abstract: In a method of manufacturing a device comprising a film of an oxide superconducting material which comprises an alkaline earth metal, another metal component, copper and oxygen. A superconductor precursor material comprising copper oxide, alkaline earth metal fluoride and another metal or metal oxide, is provided on a substrate in the form of a film. The film is covered with a diffusion barrier against water in accordance with a pattern which is complementary to a desired pattern of superconducting material. Subsequently, the superconducting material is formed in the uncovered portions of the pattern by means of a treatment at an increased temperature in the presence of water and oxygen.

Abstract: A method of electroless deposition of gold from a solution onto ceramic oxide superconducting particles is characterized by the steps: (1) adding gold chloride to organic solvent-optional reducing agent for the gold chloride to provide a gold solution, (2) mixing the ceramic oxide superconducting particles with the gold solution, to provide a suspension, (3) optionally adding reducing agent for the gold chloride, (4) stirring and heating the suspension to deposit a layer of gold metal on the particles, and (5) separating the particles.

Abstract: The present invention provides an apparatus and method for laser direct writing of materials onto a receiving substrate using a high power pulsed laser. The invention includes a pulsed laser light source, a receiving substrate, disposed opposite the pulsed laser light source, and an optically transparent source support substrate positioned between the receiving substrate and the pulsed laser light source, wherein a surface of the optically transparent source support substrate facing the receiving substrate has coated thereon a thin film of material to be deposited on the receiving substrate. Laser direct writing using the invention is accomplished by impinging the thin film of material with a pulsed laser light from the pulsed laser light source causing material to be selectively "blown off" the optically transparent source support substrate and deposited onto the surface of the receiving substrate.

Abstract: Fibrous glass substrates are coated with a substantially unhydrolyzed, hydrolyzable mixture of a silicon alkoxide and a titanium alkoxide and the coating is then hydrolyzed and cured. This provides the glass substrate with a long flex-life, abrasion resistant coating making the fibers of utility for use in forming filter bags.

Abstract: A pressure sensitive adhesive is prepared by the polymerization of an appropriate acrylic ester formulation of the type that includes an ethylenically unsaturated monomer having a polar group, and at least part of such polymerization is accomplished by photopolymerization using a source of ultraviolet radiation that provides a substantial portion of its ultraviolet radiation in the wavelength band of from about 280 to about 350 nm and a light intensity at the surface of the formuation being polymerized of no more than about 4.0 milliwatts/cm.sup.2.

Abstract: A method for fabricating thin smooth films of a planar metal oxide superconductor is disclosed. Fabrication of the superconductor film comprises depositing, on a substrate, a film of the planar metal oxide superconductor having a thickness greater than desired, and thinning at least a portion of the superconductor film to the desired thickness. In a particular embodiment of the method, thinning comprises exposing the superconductor film to a low energy ion beam directed at grazing incidence to the superconductor surface. Thin superconductor films fabricated in accordance with this method typically have substantially smooth surfaces and can have relatively low RF loss. These films can be advantageously used, inter alia, in RF striplines, microwave cavities and waveguides, bolometers, SQUIDs, and other Josephson junction devices.

Abstract: A method for coating interior capillary column surfaces, or packing material of a packed column, used for gas chromatography, with a stationary polymer phase that is cross-linked by exposing it to a low-temperature plasma that is uniformly distributed over the column or packing material for a predetermined period of time to effect the desired degree of cross-linking of the coating.

Abstract: Disclosed is a method for forming silver coatings on material, particularly ceramic filter material. The surface is first sensitized by applying thereto a solution comprising a silver ammonia complex and a solution comprising a reducing agent. This forms a thin silver coating which is then silver plated.