Patents Examined by Norman Morgenstern
  • Method for the plasma-activated reactive deposition of electrically conductive multicomponent material from a gas phase
    Patent number: 4965090
    Abstract: Electrically conductive multicomponent material is deposited on a tubular substrate (3) by means of a PCVD method. A plasma (9) is produced between an inner electrode (13) and an outer electrode, one of which is tubular and serves as a substrate. In order to obtain multicomponent material of the desired composition, the composition of the gas phase is changed as a function of time and/or place. In particular when metalorganic starting compounds are used, PCVD of many single layers together with an intermittent, for example, Ar/O.sub.2 plasma intermediate treatment yields an efficient removal of undesired carbon or fluorine from the deposited multicomponent material already during its manufacture.
    Type: Grant
    Filed: January 4, 1989
    Date of Patent: October 23, 1990
    Assignee: U.S. Philips Corporation
    Inventors: Georg F. Gartner, Peter A. Janiel, Hans-Jurgen Lydtin
  • CaF.sub.2 passivation layers for high temperature superconductors
    Patent number: 4965244
    Abstract: A CaF.sub.2 passivation layer is applied on the surface of a superconducting oxide by evaporation which does not disrupt the superconductive properties of the superconducting oxide.
    Type: Grant
    Filed: September 19, 1988
    Date of Patent: October 23, 1990
    Assignee: Regents of the University of Minnesota
    Inventors: John H. Weaver, Robert K. Grasselli, David L. Nelson, Harry M. Meyer, III, Donald M. Hill
  • Method for preparing improved lithium-silicate glare-reducing coating for a cathode-ray tube
    Patent number: 4965096
    Abstract: An antistatic, glare-reducing coating, as for the surface of the viewing surface of a CRT is prepared by (a) warming a glass support surface above room temperature, (b) coating a surface of the warm support with an aqueous solution containing a lithium-stabilized silica sol and an inorganic metallic compound, and drying the deposited coating, (c) heating the glass support surface and the coating to a temperature of about 65.degree. C. for about 30 seconds, and (d) washing and then drying the coating.
    Type: Grant
    Filed: August 25, 1988
    Date of Patent: October 23, 1990
    Assignee: RCA Licensing Corp.
    Inventors: Samuel B. Deal, Donald W. Bartch
  • Method of producing oxide superconducting cables and coils using copper alloy filament precursors
    Patent number: 4965245
    Abstract: A method of producing a superconducting cable or a coil including an A-B-C-D system superconductor where the A includes an element of group IIIa of the Periodic Table, the B an element of group IIa of the Periodic Table, C copper, D oxygen.
    Type: Grant
    Filed: July 15, 1988
    Date of Patent: October 23, 1990
    Assignee: Fujikura Ltd.
    Inventors: Masaru Sugimoto, Osamu Kohno, Yoshimitsu Ikeno, Nobuyuki Sadakata, Mikio Nakagawa, Shin'ya Aoki, Masayuki Tan, Ryuichi Okiai, Syotaro Yoshida, Masakazu Hasegawa, Hiroshi Yamanouchi
  • Thin film-forming apparatus
    Patent number: 4962727
    Abstract: A thin film-forming apparatus includes a vessel defining a reaction chamber, a stage for holding an object for processing within the reaction chamber, and members for introducing reaction gases into the reaction chamber. The apparatus further has an electrode disposed at the periphery of the object held by the stage for capturing particles which do not contribute to the formation of a thin film on the object, and a power source for applying a direct-current voltage to the electrode. By virtue of this arrangement, the apparatus is capable of preventing adhesion of foreign particles to the object, and is thus capable of forming high-quality films with a high yield.
    Type: Grant
    Filed: July 19, 1989
    Date of Patent: October 16, 1990
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventor: Shigeru Harada
  • Method of chromizing large size articles
    Patent number: 4963395
    Abstract: A chromium coating process for coating large size articles such as boiler tubes and boiler tube assemblies, comprises the steps of: (a) mounting on a stationary foundation a retort having a removable cover; (b) covering the articles to be coated in the retort by a chromium source powder containing 3% of ammonium chloride and 42% ferrochromium, the balance consisting of alumina; (c) sealing the cover on the retort; (d) heating the retort to a uniform temperature of 2100.degree. F. for 10 hours; (e) supplying concurrent with the commencement of the heating an inert gas to the interior of the retort; (f) terminating the heating of the retort and shutting off the flow of the inert gas to the retort; (g) cooling the retort and the articles within the retort uniformly throughout to a temperature of 400.degree. F.; (h) removing the cover from the retort; (i) removing the coated articles therefrom.
    Type: Grant
    Filed: January 31, 1990
    Date of Patent: October 16, 1990
    Assignee: Combustion Engineering, Inc.
    Inventors: Everett C. Lewis, Harley A. Grant
  • High-T.sub.c superconducting unit having low contact surface resistivity and method of making.
    Patent number: 4963523
    Abstract: A low resistivity contact to a high-Tc superconductor is made by forming a contact pad on the surface of an abraded or freshly prepared superconductor by depositing an inert metal on the surface so that a surface resistivity between the surface of the high-Tc superconductor and the pad is established of less than about 1000.mu..OMEGA.-cm.sup.2 at high-Tc superconductor operating temperatures.
    Type: Grant
    Filed: November 6, 1987
    Date of Patent: October 16, 1990
    Assignees: The United States of America as represented by the Secretary of the Commerce, Westinghouse Electric Corporation
    Inventors: John W. Ekin, Armand J. Panson, Betty A. Blankenship
  • Method for producing thin metal films by vapor-deposition
    Patent number: 4963394
    Abstract: A method for producing thin metal films by vapor-deposition or vacuum metallization in a recipient wherein the partial pressure of the water vapor is set at the beginning of and during the process of vapor-deposition so that the metal layer is deposited in a controlled fashion such that the mechanical stresses occurring in the metal layer are minimum.
    Type: Grant
    Filed: April 12, 1989
    Date of Patent: October 16, 1990
    Assignee: Siemens Aktiengesellschaft
    Inventor: Josef Willer
  • Method to prevent backside growth on substrates in a vapor deposition system
    Patent number: 4963393
    Abstract: Backside growth on substrates in a vapor deposition system has been a problem resulting in cracking of the material deposited on the substrate, making replication in a vapor deposition system difficult to achieve, and requiring post deposition machining to separate the substrate-deposit from the deposition fixture. A solution to the problem is the following: the substrate is mounted on a plurality of graphite pillars, with the pillars being bonded to the substrate as near the periphery thereof as possible. A hollow body open on one side but closed on the other, and fabricated from GRAFOIL with graphite cement used as a bonding agent, is mounted on the pillars with the open end facing the substrate. The open end of the body is pressed against the substrate and sealed with a bonding agent. This completely covers the backside of the substrate and thus prevents any vapor deposition thereon.
    Type: Grant
    Filed: September 7, 1989
    Date of Patent: October 16, 1990
    Assignee: CVD Incorporated
    Inventors: Jitendra S. Goela, Roy D. Jaworski, Raymond L. Taylor
  • Chemical vapor deposition reaction apparatus having isolated reaction and buffer chambers
    Patent number: 4962726
    Abstract: In a CVD reaction apparatus having a heated reaction chamber (102) and a buffer chamber (103) connected continuously under the reaction chamber and a wafer boat elevator (114) which is to be raised to put the wafer boat (113) in the reaction chamber and brought down to the buffer chamber (103), a vertically moving shutter (122) is provided which gas-tightly isolates the buffer chamber (103) from the reaction chamber (102) during the CVD reaction process and an evacuation tube (123') having an evacuation valve (123) and an inert gas inlet tube (125') are connected to the buffer chamber (103), for maintaining the pressure of the buffer chamber higher than that of the reaction chamber.
    Type: Grant
    Filed: November 9, 1988
    Date of Patent: October 16, 1990
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Yoshinari Matsushita, Kenji Fukumoto
  • Formation of film superconductors by metallo-organic deposition
    Patent number: 4962088
    Abstract: A superconducting Y.sub.1 Ba.sub.2 Cu.sub.4 O.sub.2 thin film is formed by a metalorganic deposition method which comprises depositing a solution comprising neodecanoates of Y, Ba and Cu and a solvent having at least approximately 5 volume percent pyridine in xylene onto a substrate selected from the group consisting of strontium titanate, barium titanate, and sapphire; pyrolyzing the coated substrate to thermally decompose the neodecanoates at a temperature of about 500.degree. C. followed by a rapid thermal annealing.
    Type: Grant
    Filed: April 27, 1988
    Date of Patent: October 9, 1990
    Assignee: General Motors Corporation
    Inventors: Adolph L. Micheli, Dennis F. Dungan, Aboud H. Hamdi, Joseph V. Mantese, Ruth Carol O. Laugal
  • Production of oxidic superconductors by zone oxidation of a precursor alloy
    Patent number: 4962085
    Abstract: Discloses a process for producing oxidic superconductors having advantageously textured oxide structures which involves zone oxidizing elongated metallic precursors of the superconductors.
    Type: Grant
    Filed: April 12, 1988
    Date of Patent: October 9, 1990
    Assignee: Inco Alloys International, Inc.
    Inventors: John J. deBarbadillo, II, Gaylord D. Smith
  • Method of treating semiconductor wafers in a magnetically confined plasma at low pressure by monitoring peak to peak voltage of the plasma
    Patent number: 4960610
    Abstract: In a magnetically confined plasma, optimal pressure is found by measuring the peak to peak voltage of the plasma and looking for a distinct minimum in the peak to peak voltage. The pressure at which the minimum occurs can be used to calibrate a manometer used in the system.
    Type: Grant
    Filed: November 13, 1989
    Date of Patent: October 2, 1990
    Assignee: Tegal Corporation
    Inventor: Ole Krogh
  • Apparatus for forming a thin film
    Patent number: 4960072
    Abstract: An apparatus for forming a thin film having a vacuum container evacuated to high vacuum and receiving a gas for vapor deposition, a generation device for generating a material vapor, a counter electrode holding a substrate to be vapor-deposited, a first grid disposed between the generation device and the electrode for accelerating the vapor, and a filament for emitting thermions to ionize the vapor. The first grid and counter electrode surfaces may be curved and parallel to each other, and a second grid for accelerating the vapor, having a potential which is negative with respect to the potential of the first grid, may be placed between the first grid and the electrode, in the vicinity of the electrode, and a device may be provided for moving the first grid with respect to the electrode on a predetermined track.
    Type: Grant
    Filed: August 5, 1988
    Date of Patent: October 2, 1990
    Assignee: Ricoh Company, Ltd.
    Inventors: Wasaburo Ohta, Mikio Kinoshita, Tadao Katsuragawa
  • Resistance heater for diamond production by CVD
    Patent number: 4958592
    Abstract: A plural substrate CVD apparatus for diamond crystal production utilizes spaced apart vertical, parallel, planar substrate panels with an electrical (direct current, D.C.) resistance filament heater therebetween. A hydrogen-hydrocarbon gas mixture flows between panels to come into contact with the heater and the panels to cause diamond crystal nucleation and growth on the substrate panels. The apparatus includes means for maintaining the spaced relationship of the heater from the substrate surfaces, comprising a rod member attached to one end of the heater and tensioned by a cable passing over a pulley member and attached to a weight.
    Type: Grant
    Filed: August 22, 1988
    Date of Patent: September 25, 1990
    Assignee: General Electric Company
    Inventors: Thomas R. Anthony, Robert C. DeVries, Richard A. Engler, Robert H. Ettinger, James F. Fleischer
  • Method of patterning superconducting oxide thin films
    Patent number: 4957899
    Abstract: A method is shown of applying in accordance with a pattern thin layers of an oxidic superconductive material onto a substrate in which a copper oxidic based material that after heating is rendered superconducting at a desired service temperature is covered in a desired pattern with a composition that renders the underlying oxidic material non-superconducting.
    Type: Grant
    Filed: January 3, 1989
    Date of Patent: September 18, 1990
    Assignee: U.S. Philips Corporation
    Inventors: Maritza G. J. Heijman, Peter C. Zalm
  • Internal reactor method for chemical vapor deposition
    Patent number: 4957780
    Abstract: A chemical vapor deposition process in which an internal reactor is disposed within a chemical vapor deposition reactor including means for enclosing a reaction chamber and means for heating the reaction chamber. The position at which the internal reactor is disposed relative to the heating means is selected to provide control of the temperature within the internal reactor. At least two solid precursor materials are placed in the internal reactor and are contacted with at least one precursor gas, reactive with the solid precursor materials to produce at least two reactant gases. These gases are directed to the reaction chamber to react with one or more additional reactants.
    Type: Grant
    Filed: September 15, 1989
    Date of Patent: September 18, 1990
    Assignee: GTE Laboratories Incorporated
    Inventors: Vinod K. Sarin, Charles D'Angelo, Helen E. Rebenne
  • Deposition of boron-containing films from decaborane
    Patent number: 4957773
    Abstract: Depopsition of a boron nitride film is carried out by introducing decaborane and dry nitrogen or ammonia into a plasma-assisted chemical vapor deposition chamber. The nitrogen or ammonia partial pressure should provide an excess over the decarborane pressures for example 200 milliTorr of N.sub.2 or NH.sub.3 and 50 MilliTorr of B.sub.10 H.sub.14. Other film layers can also be produced starting from decaborane.
    Type: Grant
    Filed: February 13, 1989
    Date of Patent: September 18, 1990
    Assignee: Syracuse University
    Inventors: James T. Spencer, Peter A. Dowben, Yoon G. Kim
  • Method of manufacturing a superconducting pattern by light irradiation
    Patent number: 4957900
    Abstract: A superconducting ceramic film is deposited on a substrate sputtering. In virtue of the low thermal conductivity of ceramic, a laser beam is radiated to the ceramic film in order to remove the irradiated portion by sublimation and produce a pattern on the ceramic film.
    Type: Grant
    Filed: March 28, 1988
    Date of Patent: September 18, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Shumpei Yamazaki
  • Process of forming a film by low pressure chemical vapor deposition
    Patent number: 4956204
    Abstract: A chemical vapor deposition method is characterized in that a heating block and a surface to be deposited of a substrate are arranged to face to each other at a given distance in a closed space, a source gas is guided into the closed space and supplied between the heating block and the substrate, thereby depositing a thin film on the surface to be deposited of the substrate. A chemical vapor deposition apparatus includes a heating block arranged in a closed space, a substrate holder for holding a substrate so that a surface to be deposited of the substrate is arranged to face to the heating block at a given distance, and a device for guiding a source gas to the closed space. In this CVD apparatus, the source gas guided by the device is guided to the closed space and supplied between the heating block and the substrate, thereby depositing a thin film on the surface to be deposited of the substrate.
    Type: Grant
    Filed: March 15, 1989
    Date of Patent: September 11, 1990
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Takao Amazawa, Hiroaki Nakamura