Abstract: Method and system for generating electromagnetic radiation wherein one or more attributes of the electromagnetic radiation are adjusted based on a characteristic of the object being illuminated. The object characteristic can be obtained based on a sensed property of the object and used to adjust the attribute(s) of the electromagnetic radiation accordingly.

Abstract: A medium detection apparatus is provided with: a light emitting section adapted to emit light; a light receiving section adapted to detect reflected light and output an output value in accordance with an amount of the reflected light; a medium supporting section adapted to support a medium and having a diffusing section adapted to diffuse the light emitted from the light emitting section; and a controller adapted to detect an edge of the medium based on a difference between the output value of the light receiving section when the light receiving section detects light reflected from the medium and the output value of the light receiving section when the light receiving section detects light reflected from the medium supporting section.

Abstract: An image processing apparatus uses a camera to pick up images of an image pickup target illuminated by a transmission type illumination, via optical filters, and then allows a spectral characteristic estimating section and a pigment amount estimating section to calculate a physical amount relating to the image pickup target for each pixel of the image pickup target, on the basis of the picked-up multiple band images. On this occasion, the image processing apparatus uses the optical filters the number of which is equal to the number of independent components of the calculated physical amount.

Abstract: A multi-beam photoelectric sensor is disclosed which can be fabricated by selecting the length of a light projection/light-receiving columnar member and the number and pitches of optical axes in accordance with the width of a hazardous area of an object or the diameter of the minimum object to be detected. A projector string or a photo-detector string includes an optical module string having an alignment of a plurality of optical modules with an optical system for one optical axis, a light projection circuit for one optical axis and a plurality of flip-flops corresponding to one stage of a shift register, integrated with each other, and a flat cable. The flip-flops in the adjacent optical modules are connected in cascade by the adjacent module conduction wires thereby to make up a shift register. The optical modules making the optical module string are sequentially activated by the data sequentially sent by the shift register.

Abstract: A semiconductor image sensor utilizing a metal mesh filter to transmit light of a specific wavelength to a photoconversion device, and method of making said image sensor. Semiconductor image sensor pixel cells using varied metal mesh filters may be arranged in a Bayer pattern for color imaging. As a result, the need for using conventional polymer color filters in image sensor applications is eliminated.

Abstract: A three-dimensional imaging resonator and method therefor provides improved surface height measurement capability in optical measuring systems. A resonator including a surface of interest in a resonant image path is coupled to an external multi-pixel detector that detects an image of intensity of light reflected from or transmitted through the resonator. An imaging system is included in the resonator to image a region of a surface of interest on another reflector forming part of the resonator. By changing an effective cavity length of the resonator, the image is “scanned” in a direction perpendicular to the other reflector and a processing system stores information corresponding to resonance peaks to achieve a mapping of feature height above the surface of interest. The resonator effective cavity length can be changed by sweeping the illumination wavelength or by mechanically or otherwise altering the optical length of the resonator.

Abstract: In a method and system to provide high intensity photic stimulation to disable target subjects, a high intensity light source is activated by trigger signals to produce light flashes in commanded patterns of duration and frequency. A user views a field illuminated through a shutter viewer such as shutter goggles. The goggles are gated to a light blocking state in response to trigger pulses. The light blocking state has a wider time width than the light flashes from the light source produced in response to the trigger pulses to avoid the need for close synchronization. The target subjects are exposed to the high intensity light flashes while the light flashes are blocked from the view of users. Due to a low duty cycle, the users' view through the shutter goggles is unaffected by the intermittent opacity of the shutter goggles.

Abstract: A semiconductor color sensor implemented without the use of color filters. Fabricating photodiodes using different semiconductor materials provide photodiodes with different sensitivities vs. wavelengths. A first embodiment uses photodiodes with different junction depths. A shallow junction depth produces a photodiode with its sensitivity peak in shorter wavelengths, while a deeper junction depth produces a photodiode with its sensitivity peak in longer wavelengths. Amorphous as well as crystalline structures may be used. A second embodiment uses photodiodes with different materials, such as Silicon-Germanium (SiGe) which has a longer wavelength peak sensitivity, and Silicon (Si) which has a shorter wavelength peak sensitivity in comparison. More than two photodiodes having different wavelength sensitivities may be used. Sensing current ratios between pairs of diodes allows color balance to be maintained.

Abstract: An optical wireless local area network using line of sight optical links. The base station and terminal stations are provided with optical transceivers which include a transmitter array and detector array. The transmitter array consists of an array of resonant cavity light emitting diodes integrated using flip-chip technology with a CMOS driver circuit. The driver circuit includes constant bias, current peaking and charge extraction. The driver circuitry is compact and can be confined within a region underlying the corresponding light source. The detector array consists of an array of photo diodes, provided with sense circuitry consisting of a pre-amplifier and post-amplifier. The diodes and sense circuitry are also integrated using a flip-chip technique. The light emitter and the detector may include adaptive optical elements to steer and/or focus the light beams.

Abstract: A resonator method and system for distinguishing characteristics of surface features or contaminants provides improved inspection or surface feature detection capability in scanning optical systems. A resonator including a surface of interest in the resonant path is coupled to a detector that detects light leaving the resonator. Changes in the resonance peak positions and peak intensities are evaluated against known changes for standard scatters in order to determine the material characteristics of an artifact at the surface of interest that causes a resonance change. The lateral size of the artifact is determined by de-convolving a known illumination spot size with the changing resonance characteristics, and the standard scatterer data is selected in conformity with the determined artifact size.

Abstract: Microelectronic imaging units and methods for manufacturing the microelectronic imaging units. In one embodiment, an imaging unit includes a support member, an imaging die attached to the support member, and a driving member attached to the imaging die and the support member. The imaging die includes an image sensor, an integrated circuit operably coupled to the image sensor, and a plurality of external contacts operably coupled to the integrated circuit. The driving member is configured to selectively move the imaging die relative to the support member. For example, the image sensor can define a focal plane, and the driving member can move the imaging die along an axis in the focal plane.

Abstract: A microlens structure includes lower lens layers on a substrate. A sputtered layer of glass, such as silicon oxide, is applied over the lower lens layers at an angle away from normal to form upper lens layers that increase the effective focal length of the microlens structure. The upper lens layers can be deposited in an aspherical shape with radii of curvature longer than the lower lens layers. As a result, small microlenses can be provided with longer focal lengths. The microlenses are arranged in arrays for use in imaging devices.

Abstract: A vehicle rearview mirror system includes an electro-optic reflective element, an ambient light sensor that is operable to sense ambient light, a glare light sensor that is operable to sense glare light and a circuit that is responsive to the ambient glare light sensors which establishes a reflectance level of the reflective element. The circuit includes a sensor-responsive device and a controller. The sensor-responsive device produces an output that is a function of light sensed by glare and ambient light sensors. The controller connects one of the glare and ambient light sensors at a time with the sensor-responsive device to establish glare and ambient light levels and thereby the reflectance level of the reflective element. The mirror system may include a display operable to project light through the reflective element and may control the intensity of the display as a function of the glare light and ambient light.

Abstract: A pixel circuit for an image sensor uses a common reset transistor for resetting both of a photodiode node and a memory node. Respective transfer gates connect the common reset transistor to the photodiode node and to the memory node, and connect photodiode node and the memory node to each other. A source follower enabled with a row select gate provides a readout signal from the memory node. The use of the common reset transistor and the operational timing of the circuit elements improves fixed pattern noise arising from transistor feedthroughs in the pixel circuit.

Abstract: A light conversion apparatus has a germanium-based photodiode, and a polysilicon-based receiving electrode for receiving light to be converted by the photodiode. The receiving electrode is coupled with the photodiode and permits the received light to substantially pass through it to the photodiode. The photodiode is capable of converting the received light into an electrical signal.

Abstract: An optical bench is provided, as are a thin optical pickup that employs the optical bench, and a method of manufacturing the optical bench. The optical bench includes a light source for generating light for recording and reproducing information to and from an optical disc, a light source stand on which the light source is mounted, a mirror adjacent to the light source stand, and a bottom surface at a lower point than the light source stand and between the light source stand and the mirror surface. Sides of the light source stand besides the side facing the mirror are connected to the surface of the substrate by a flat sloped surface. Along the sloped surface, two electrodes for supplying power to the light source are connected to the light source stand. Since the metal wirings are formed along the sloped surface without trenches or windings between the light source stand and the silicon substrate, no disconnection of metal lines at a corner occurs.

Abstract: Disclosed herein is a solid-state imaging apparatus including: a pixel section having a plurality of pixels arranged in a two-dimensional matrix, each containing an amplification means for amplifying signal of a photoelectric conversion device; horizontal and vertical read circuits for reading pixel signals in pixel units from the pixel section; and load means provided respectively at opposite locations with the pixel section between, the load means serving as one unit of load on the amplification means of each pixel arranged on each column line.

Abstract: A microlens structure includes lower lens layers on a substrate. A sputtered layer of glass, such as silicon oxide, is applied over the lower lens layers at an angle away from normal to form upper lens layers that increase the effective focal length of the microlens structure. The upper lens layers can be deposited in an aspherical shape with radii of curvature longer than the lower lens layers. As a result, small microlenses can be provided with longer focal lengths. The microlenses are arranged in arrays for use in imaging devices.

Abstract: An electron sensing device for receiving electrons from an output surface of an electron gain device has a silicon die including an active surface area for positioning below the output surface of an electron gain device. The silicon die also includes a silicon step formed below and surrounding the active surface area, and a first array of bond pads formed on the silicon step for providing output signals from the silicon die. When the electron sensing device is positioned below the electron gain device, a tight vertical clearance is formed between the output surface of the electron gain device and the active surface area of the electron sensing device.

Abstract: Methods and apparatus for improving the resolution of an electronic imaging device having an array of pixels. Sub-pixel dimension movements between an object and the array of pixels are made, and an image is formed at each position. Resulting shifted images are combined to yield an effective resolution corresponding to an array having smaller pixels. Such methods and apparatus allow optical systems with existing pixel devices to form effective images of smaller feature sizes.