Patents Examined by Patrick Stafford
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Patent number: 8270443Abstract: A side-pumped, diode-pumped solid-state laser cavity includes a conductively cooled housing having an opening for pump radiation from a diode array in close proximity to a laser rod. The pump light is absorbed by the rod and excites the laser ions. The cavity includes a thin, diffuse reflector encircling the rod, having a shaped opening for the collection and redirection of the pump light into the rod, and a good heat conductor as the heat sink and heat conductor. A split heat sink inhibits the flow of heat from the pump diodes into the laser rod, and pre-formed air spacings are designed to provide uniform temperature distribution around the laser rod.Type: GrantFiled: January 19, 2012Date of Patent: September 18, 2012Assignee: Israel Aerospace Industries Ltd.Inventors: Ram Oron, Doron Nevo, Moshe Oron
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Patent number: 8270445Abstract: A light-emitting device is provided which includes a gain medium having an optically-active phosphosilicate glass, wherein the phosphosilicate glass includes at least one active ion dopant and from about 1 to 30 mol % of phosphorus oxide. The phosphorous oxide may be present in an effective amount for reducing any photodarkening effect and increasing the saturation energy of the system. The active ion dopant may be a rare earth dopant. The light-emitting device may include an optical waveguide, the optical waveguide including the gain medium. The optical waveguide may have a core and at least one cladding, and the gain medium having the phosphosilicate glass may be found in the core and/or in one of the cladding.Type: GrantFiled: July 15, 2008Date of Patent: September 18, 2012Assignee: Coractive High-Tech IncInventors: Bertrand Morasse, Jean-Philippe De Sandro, Eric Gagnon, Stephane Chatigny
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Patent number: 8265113Abstract: In a III-nitride semiconductor laser device, a laser structure includes a support base comprised of a hexagonal III-nitride semiconductor and having a semipolar primary surface, and a semiconductor region provided on the semipolar primary surface of the support base. An electrode is provided on the semiconductor region of the laser structure.Type: GrantFiled: July 15, 2010Date of Patent: September 11, 2012Assignee: Sumitomo Electric Industries, Ltd.Inventors: Yusuke Yoshizumi, Shimpei Takagi, Takatoshi Ikegami, Masaki Ueno, Koji Katayama
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Patent number: 8265109Abstract: A laser crystallization apparatus and method are disclosed for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In still another aspect of an embodiment of the present invention, a system and method are provided for stretching a laser pulse. In another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range. In another aspect, a system may be provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped line beam.Type: GrantFiled: April 21, 2009Date of Patent: September 11, 2012Assignee: Cymer, Inc.Inventors: Palash P. Das, Thomas Hofmann, Jesse D. Davis, Richard L. Sandstrom
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Patent number: 8265107Abstract: A laser glass fiber with a core of the fiber comprising a silicate glass host, one or more glass network modifiers, one or more glass network intermediators, and Thulium ions, Holmium ions, or a combination of Thulium ions and Holmium ions. The fiber emits laser light from 1.7 micron to 2.2 micron.Type: GrantFiled: February 1, 2012Date of Patent: September 11, 2012Assignee: AdValue Photonics, Inc.Inventors: Shibin Jiang, Tao Luo
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Patent number: 8265114Abstract: A surface emitting laser having a laminated structure has a first region and a second region. The first region is a region having at least one guided mode, a propagation mode in which light is propagated in the in-plane direction of a substrate at a laser oscillation wavelength. The second region is a region having a substrate radiation mode in which light is emitted to the side of the substrate at the laser oscillation wavelength.Type: GrantFiled: March 18, 2010Date of Patent: September 11, 2012Assignee: Canon Kabushiki KaishaInventors: Yasuhiro Nagatomo, Takeshi Uchida
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Patent number: 8260145Abstract: A transceiver architecture for wireless base stations wherein a broadband radio frequency signal is carried between at least one tower-mounted unit and a ground-based unit via optical fibers, or other non-distortive media, in either digital or analog format. Each tower-mounted unit (for both reception and transmission) has an antenna, analog amplifier and an electro-optical converter. The ground unit has ultrafast data converters and digital frequency translators, as well as signal linearizers, to compensate for nonlinear distortion in the amplifiers and optical links in both directions. In one embodiment of the invention, at least one of the digital data converters, frequency translators, and linearizers includes superconducting elements mounted on a cryocooler.Type: GrantFiled: March 12, 2009Date of Patent: September 4, 2012Inventors: Deepnarayan Gupta, Oleg Mukhanov
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Patent number: 8259766Abstract: A laser diode drive circuit includes: a duty control amplifier (23) that controls the duty ratio of a main signal for laser control in accordance with a duty control signal; and an AND gate (22) that outputs the duty control signal to the duty control amplifier (23), and outputs a duty control signal that controls the duty ratio of the main signal to be 0% in the duty control amplifier in accordance with a shutdown signal of a laser diode. With this structure, there is no need to input the main signal having the duty ratio controlled to a logic circuit that becomes unstable. Thus, outputs from a semiconductor laser can be shut down, and the output duty can be controlled in a stable manner.Type: GrantFiled: September 30, 2008Date of Patent: September 4, 2012Assignee: Eudyna Devices Inc.Inventor: Hidetoshi Naito
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Patent number: 8260143Abstract: A transceiver architecture for wireless base stations wherein a broadband radio frequency signal is carried between at least one tower-mounted unit and a ground-based unit via optical fibers, or other non-distortive media, in either digital or analog format. Each tower-mounted unit (for both reception and transmission) has an antenna, analog amplifier and an electro-optical converter. The ground unit has ultrafast data converters and digital frequency translators, as well as signal linearizers, to compensate for nonlinear distortion in the amplifiers and optical links in both directions. In one embodiment of the invention, at least one of the digital data converters, frequency translators, and linearizers includes superconducting elements mounted on a cryocooler.Type: GrantFiled: March 12, 2009Date of Patent: September 4, 2012Assignee: HYPRES, Inc.Inventors: Deepnarayan Gupta, Oleg Mukhanov
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Patent number: 8259763Abstract: A laser gain medium includes an optical medium configured to transmit a laser beam and having an incident face, a first face, a second face opposing to the first face; and gain media configured to amplify the laser beam while reflecting the laser beam. At least one of the gain media is joined on a first face of the optical medium as a first face gain medium, and at least one of the remaining gain media is joined on a second face of the optical medium as a second face gain medium. The laser beam is incident into the optical medium, and is amplified by the first face gain medium and the second face gain medium while being alternately reflected by the first face gain medium and the second face gain medium.Type: GrantFiled: September 23, 2011Date of Patent: September 4, 2012Assignees: Mitsubishi Heavy Industries, Ltd., Osaka UniversityInventors: Kenji Takeshita, Shinya Ishii, Tomoko Saito, Junji Kawanaka, Noriaki Miyanaga, Kazuo Imazaki, Taku Saiki, Hiroaki Furuse
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Patent number: 8260144Abstract: A transceiver architecture for wireless base stations wherein a broadband radio frequency signal is carried between at least one tower-mounted unit and a ground-based unit via optical fibers, or other non-distortive media, in either digital or analog format. Each tower-mounted unit (for both reception and transmission) has an antenna, analog amplifier and an electro-optical converter. The ground unit has ultrafast data converters and digital frequency translators, as well as signal linearizers, to compensate for nonlinear distortion in the amplifiers and optical links in both directions. In one embodiment of the invention, at least one of the digital data converters, frequency translators, and linearizers includes superconducting elements mounted on a cryocooler.Type: GrantFiled: March 12, 2009Date of Patent: September 4, 2012Assignee: Hypres Inc.Inventors: Deepnarayan Gupta, Oleg Mukhanov, Richard E. Hitt
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Patent number: 8254425Abstract: An optical device having a structured active region configured for selected wavelengths of light emissions.Type: GrantFiled: April 16, 2010Date of Patent: August 28, 2012Assignee: Soraa, Inc.Inventor: James W. Raring
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Patent number: 8254423Abstract: A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.Type: GrantFiled: June 1, 2009Date of Patent: August 28, 2012Assignee: The Regents of the University of CaliforniaInventors: Daniel A. Cohen, Steven P. DenBaars, Shuji Nakamura
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Patent number: 8254417Abstract: The present disclosure relates to a modular fiber laser system operative to controllably guide a beam which is launched from a feeding fiber into a process fiber so that the high-aperture component is coupled and guided in cladding of the process fiber, and a low-aperture component is coupled into the core of the fiber. The laser system further has a reflective element configured with light-reflecting and light-transmitting portions. The high-aperture component at least partially decouples from the cladding into the core so that the core radiates the high-aperture and low-aperture components. The high-aperture component is incident upon the light-reflecting portion and backreflected into the process fiber so that a sensor array, which is located between the feeding and process fibers, detects the reflected light.Type: GrantFiled: June 14, 2010Date of Patent: August 28, 2012Assignee: IPG Photonics CorporationInventors: Valentin Gapontsev, Valentin Fomin, Alexander Dronov, Dimitri Yagodkin
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Patent number: 8249119Abstract: Apparatus comprising an optical fiber laser having at least two laser cores and means arranged to combine laser output from the at least two laser cores at a first end of the optical fiber laser to produce a combined laser output having one or more beat signals.Type: GrantFiled: February 2, 2009Date of Patent: August 21, 2012Assignee: Qinetiq LimitedInventors: David Maurice Taylor, David Mark Benton, Charlotte R H Bennett, Laurent Michaille, Terence John Shepherd
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Patent number: 8249124Abstract: Various embodiments of an optical switch device are provided. In one embodiment, the optical switch device includes a substrate. A photonic crystal, having a dielectric material, is applied on the substrate. An optical gain layer, having an optical gain material, is disposed above the photonic crystal. The photonic crystal is formed with a second-order distributed feedback structure to emit laser light perpendicular to a plane of the photonic crystal and a first-order distributed feedback structure adapted for reflecting light in the plane of the photonic crystal back into the second-order distributed feedback structure. The first-order distributed feedback structure at least one of fully surrounds the second-order distributed feedback structure and is arranged on two opposing edges of the second-order distributed feedback structure.Type: GrantFiled: April 14, 2010Date of Patent: August 21, 2012Assignee: International Business Machines CorporationInventors: Rainer F. Mahrt, Nikolaj Moll, Thilo H. C. Stoeferle
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Patent number: 8249121Abstract: A laser system having separately electrically operable cavities for emitting modulated narrow linewidth light with first, second and third mirror structures separated by a first active region between the first and the second and by a second active region between the second and the third. The second mirror structure has twenty of more periods of mirror pairs.Type: GrantFiled: June 17, 2011Date of Patent: August 21, 2012Assignee: Vixar, Inc.Inventors: Mary K. Brenner, Klein L. Johnson
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Patent number: 8243768Abstract: A semiconductor diffraction grating device includes a semiconductor substrate having a principal surface, a semiconductor core layer and a semiconductor cladding layer provided on the principal surface, and a chirped grating structure provided between the semiconductor core layer and the semiconductor cladding layer. The chirped grating structure includes a first region, a second region, and a third region arranged in that order in a predetermined axis direction, the first, second, and third regions including a plurality of projections constituting a chirped grating. The plurality of projections are provided at placement positions arranged with a predetermined pitch in the predetermined axis direction. The coupling coefficient ? of the chirped grating monotonically increases in the predetermined axis direction to a predetermined value in the first region, remains flat in the second region, and monotonically decreases in the predetermined axis direction from the predetermined value in the third region.Type: GrantFiled: October 12, 2010Date of Patent: August 14, 2012Assignee: Sumitomo Electric Industries, Ltd.Inventor: Michio Murata
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Patent number: 8238391Abstract: This invention provides a p-type group III nitride semiconductor, with good p-type properties, having a composition expressed by AlXGaYInZN in which each of X, Y and Z indicates a rational number satisfying a relationship of X+Y+Z=1.0, even if Al content is as high as 1.0>X?0.5. It is achieved that a proportion of a hole concentration at 30° C. to an acceptor impurity atom concentration is 0.001 or more in the p-type group III nitride semiconductor of the invention, by doping acceptor impurity atoms such as Mg in concentration of 5×1018 to 1×1020 cm?3 using the method, for example, MOCVD with attention not to incorporate an impurity atom other than the acceptor impurity atom or not to form dislocation in the crystal when producing the group III nitride semiconductor expressed by the above composition.Type: GrantFiled: March 21, 2008Date of Patent: August 7, 2012Assignee: Tokuyama CorporationInventors: Toru Kinoshita, Hiroyuki Yanagi, Kazuya Takada
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Patent number: 8238395Abstract: A automatic power control loop comprises a photo diode used for sensing a light intensity of a laser diode to generate a feedback current, a switch selector used for selecting one among a plurality of predetermined currents according to a control signal generated by a controller, a transducer used for transferring a current different between the feedback current and the selected predetermined current into a load voltage, a comparator used for comparing the load voltage with a reference voltage to generate a comparison signal, a counter used for counting a count value according to the comparison signal and the control signal, and a laser diode driver used for generating a corresponding bias current in response to the count value to drive the laser diode. Thereby, the bias current will be adjusted within an allowable range, so that the light source of the laser diode can maintain a constant light intensity.Type: GrantFiled: July 19, 2011Date of Patent: August 7, 2012Assignee: TM Technology, Inc.Inventors: Chih-yang Wang, Chi-Ping Wang