Abstract: A chirped pulse amplification system includes one or more polarization compensator configured to compensate for polarization altering elements with the chirped pulse amplification system. The polarization compensator is responsive to a sensor configured to provide feedback to the polarization compensator. In some embodiments, the chirped pulse amplification system further includes a controller configured to automatically adjust the polarization compensator responsive to the sensor. The sensor is optionally a power sensor.

Abstract: The invention relates to a diode laser array with at least one laser bar and having at least one emitter and a heat sink array for cooling the at least one laser bar.

Abstract: A laser glass fiber with a core of the fiber composition, comprising a silicate glass host, one or more glass network modifiers, one or more glass network intermediators, and Thulium ions, Holmium ions, or a combination of Thulium ions and Holmium ions. The fiber emits laser light from 1.7 micron to 2.2 micron.

Abstract: A semiconductor laser diode apparatus capable of suppressing variation in an emission position and an emission direction of a laser beam emitted from a semiconductor laser diode element is obtained. This semiconductor laser diode apparatus includes a semiconductor laser diode element having warping along either a first direction in which a cavity extends or a second direction intersecting with the first direction and a base on which a convex side of the warping of the semiconductor laser diode element is fixed, wherein a distance between a first end of the semiconductor laser diode element in a direction of larger warping among the first and second directions and the base is smaller than a distance between a second end of the semiconductor laser diode element in the direction of the large warping among the first and second directions and the base.

Abstract: A new and useful attenuating device and method for attenuating a polarized laser beam is provided. At least one attenuating optic is located along, and is rotatable about, a polarized laser beam axis, and is configured to transmit and to reflect portions of the polarized laser beam. The attenuating optic provides predetermined attenuation of the polarized laser beam by changing the ratio between transmission and reflection of the polarized laser beam as a function of the incidence of the polarized laser beam on one or more partially reflective surfaces of the attenuating optic. The attenuating optic is rotatable about the polarized laser beam axis to control the incidence of the polarized laser beam on the one or more partially reflective surfaces of the attenuating optic, thereby to control the ratio between transmission and reflection of the polarized laser beam and provide a range of attenuation of the polarized laser beam.

Abstract: A multi-wavelength array of hybrid silicon lasers and a method of fabricating such a device. The method may include providing a silicon-on-insulator wafer; patterning waveguides in the silicon-on-insulator wafer; providing a III-V wafer comprising multiple layers; applying quantum well intermixing to obtain a plurality of regions of different bandgaps within the III-V wafer; and bonding the silicon on insulator wafer with the III-V wafer.

Abstract: A semiconductor laser has a semiconductor substrate, a lower cladding layer formed on the semiconductor substrate, an active layer disposed above the lower cladding layer, a first upper cladding layer disposed above the active layer, a second upper cladding layer disposed above the first upper cladding layer and having a mesa structure, a high-order mode filter layer formed on both side faces of the second upper cladding layer, continuously extending from the both side faces onto at least a part of a side region on both sides of the second upper cladding layer and having a band gap not exceeding a band gap of the active layer, and a block layer formed on the high-order mode filter layer and on a side region on both sides of the second upper cladding layer and including a layer having a band gap greater than a band gap of the active layer.

Abstract: Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided.

Abstract: A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer.

Abstract: A wavelength tunable laser which includes a first mirror, a diffraction grating to diffract a laser beam into a plurality of diffracted laser beams, at least one feedback waveguide, at least one second mirror. Each feedback waveguide precedes one of the second mirrors, and a phase detector to detect an error in a wavelength of a received laser beam with respect to a desired wavelength.

Abstract: A nitride semiconductor laser element includes a nitride semiconductor layer of a first conduction type, an active layer, and a nitride semiconductor layer of a second conduction type that is different from the first conduction type are laminated in that order, a cavity end face formed by the nitride semiconductor layers, and a protective film formed on the cavity end face. The nitride semiconductor layers of the first and second conduction types have layers containing Al, and the active layer has layer containing In. The protective film has a region in which an axial orientation of crystals is the same as that of the cavity end face on the nitride semiconductor layers of the first and second conduction types, and has another region in which an axial orientation of crystals is different from that of the cavity end face on the active layer.

Abstract: Particular embodiments of the present disclosure bring an SHG crystal, or other type of wavelength conversion device, into close proximity with a laser source to eliminate the need for coupling optics, reduce the number of package components, and reduce package volume. According to one embodiment of the present disclosure, an optical package is provided comprising a laser source subassembly comprising a laser base and a wavelength conversion device subassembly comprising a converter base. The bonding interface of the laser base is bonded the complementary bonding interface of the converter base such that the laser output face can be proximity-coupled to the converter input face at an predetermined interfacial spacing x. Additional embodiments are disclosed and claimed.

Abstract: A DFB quantum cascade laser element that can reliably CW-oscillate a single-mode light even at room temperature or a temperature in proximity thereof is provided. In a quantum cascade laser element 1, a top-grating approach for which a diffraction grating 7 is formed on a laminate 3 is adopted, and thus in comparison with a buried-grating approach, deterioration in temperature characteristics of the laser element and decline in the yield and reproducibility are suppressed. In addition, since the thickness of a cladding layer 5 located between an active layer 4 and the diffraction grating 7 is within a range of 42±10% of the oscillation wavelength, weakening of light seeping from the active layer 4 to the diffraction grating 7 or an increase in light leakage is prevented. Consequently, by the quantum cascade laser element 1, a single-mode light can be reliably CW-oscillated even at room temperature or a temperature in proximity thereof.

Abstract: A semiconductor laser according to the present invention comprises a ?/2 dielectric film (?:in-medium wavelength of a dielectric film, for example, SiO2, Si3N4, Al2O3, and AIN) in contact with an facet of a resonator; and a first dielectric double layered film disposed on the dielectric film, which includes a first layer of a-Si and a second layer of a material having a refractive index lower than that of a-Si. The first layer has a thickness) ¼ of a in-medium wavelength of a-Si, and the second layer has a thickness ¼ of a in-medium wavelength of the second layer. Therefore, it is possible to firmly stack the first dielectric double layered film and form a high reflectance film with high yield.

Abstract: An ultra-short pulse laser system comprising an amplifying laser medium for producing a laser emission, a laser resonator having at least one resonator mirror and a pump source has a gas-filled section with a filling gas, the latter consisting of a single gas or a filling gas mixture differing from the composition of air, whose nonlinear refractive index n2 substantially corresponds to that of air and which has a rotational Raman effect which is smaller in comparison with air.

Abstract: A semiconductor laser diode apparatus capable of suppressing difficulty in handling of the semiconductor laser diode also when the width of a semiconductor laser diode portion is small is obtained. This method of fabricating a semiconductor laser diode apparatus includes steps of forming a plurality of first semiconductor laser diode portions on a first substrate at a prescribed interval in a second direction intersecting with a first direction in which cavities extend, bonding one or some of the plurality of first semiconductor laser diode portions to a second substrate, separating the one or some of the plurality of first semiconductor laser diode portions bonded to the second substrate from the first substrate; and dividing the second substrate along the second direction.

Abstract: A tunable laser cavity for selectively emitting laser light having a first wavelength and a second wavelength using pump light emitted by a pump light source.

Abstract: A method of driving an ultrashort pulse and ultrahigh power laser diode device having a simple composition and a simple structure is provided. In the method of driving a laser diode device, light is injected from a light injection means into a laser diode device driven by a pulse current having a value 10 or more times as large as a value of a threshold current.

Abstract: A bar-shaped semiconductor laser chip that can hold down a variation in oscillation wavelength is provided. The bar-shaped semiconductor laser chip has a nitride semiconductor substrate and a semiconductor layer formed on the main surface of the nitride semiconductor substrate and including a plurality of laser chip portions. The plurality of laser chip portions are arrayed in the [11-20] direction. The main surface of the nitride semiconductor substrate is a (0001) plane having an off-angle in the direction along the [11-20] direction. The central part of the main surface of the nitride semiconductor substrate has an off-angle of 0.05±0.1 degrees from the (0001) plane in the direction along the [11-20] direction.

Abstract: A light emitting apparatus includes a surface emitting laser and a ceramic package. The surface emitting laser has a common electrode on the back surface thereof and is mounted on the ceramic package via the common electrode. The common electrode of the surface emitting laser is electrically connected to a mount portion of the ceramic package. The mount portion is electrically connected to a back-surface electrode on the back surface of the ceramic package. The mount portion is also thermally connected to a back-surface heat-dissipating electrode on the back surface of the ceramic package via a penetrating electrode that penetrates the ceramic package. The surface emitting laser is spaced apart from the penetrating electrode in order to prevent inclination in light-emitted direction. The back-surface heat-dissipating electrode prevents destruction of a soldered portion when the light emitting apparatus is mounted on a substrate by soldering.