Abstract: An acousto-optic deflector includes a body of material through which a laser beam to be modulated passes. The material has an acoustic attenuation in the range of 0.15 to 1.0 dB/?s-GHz2 and operates in a UV range of about 150 to 400 nm. A transducer is bonded to the body of material to launch a wave. An electronic driver drives the transducer.

Abstract: A laser with a spectral converter. The novel laser includes a spectral converter adapted to absorb electromagnetic energy in a first frequency band and re-emit energy in a second frequency band, and a laser gain medium adapted to absorb the re-emitted energy and output laser energy. The spectral converter includes a plurality of quantum dots having an emission spectrum matching an absorption spectrum of the gain medium. In an illustrative embodiment, the spectral converter is adapted to convert broadband energy to narrowband energy, and the gain medium is a REI-doped solid-state laser gain medium.

Abstract: A semiconductor laser device includes an n-type clad layer, an active layer, and a p-type clad layer having a ridge and wing regions. The wing regions are provided with a first trench present on one side of the ridge and a second trench provided on the other side thereof being interposed therebetween. A reflectivity Rf at a front end face of a resonator, a reflectivity Rr at a rear end face of the resonator, a minimum value W1 of a width of the first trench in a region adjacent to the front end face, a minimum value W2 of a width of the second trench in the region adjacent to the front end face, a width W3 of the first trench at the rear end face, and a width W4 of the second trench at the rear end face satisfy Rf<Rr, W1<W3, and W2<W4. A width Wf of the ridge at the front end face, and a width Wr of the ridge at the rear end face satisfy Wf>Wr. The ridge includes a region where a width decreases with distance from the front end side toward the rear end side.

Abstract: In a semiconductor laser, in order to realize a desired oscillation wavelength efficiently by adjusting the oscillation wavelength of the laser with sufficient accuracy even when the oscillation wavelength of a manufactured laser deviates from a design value, for example, due to the manufacturing errors and the like in the manufacturing of the laser, there is provided a semiconductor laser comprising a semiconductor substrate, a semiconductor stacking body including a waveguide formed on the semiconductor substrate, and a diffraction grating, wherein the diffraction grating is formed along the waveguide so as to appear in the surface of the semiconductor stacking body.

Abstract: A VCSEL with a structure able to reduce the scattering within the optical cavity and its manufacturing method are disclosed. The VCSEL of the present invention provides, on the semiconductor substrate, the first DBR, the active layer, the p-type spacer layer, the heavily doped p-type mesa, the heavily doped n-type layer, the first n-type spacer and the second DBR in this order. The heavily doped n-type layer, which is formed so as to cover the p-type spacer layer and the heavily doped p-type mesa, forms the tunnel junction with respect to the heavily doped p-type mesa. Because the height, which is appeared in the surface of the n-type spacer layer, reflects the height of the heavily doped p-type mesa and is comparatively small, the light scattering between the second DBR and the n-type spacer layer is suppressed.

Abstract: A semiconductor laser is a distributed feedback semiconductor laser in which the lasing wavelength can be changed, and includes a semiconductor substrate and a semiconductor layer portion provided on the substrate and including first and second active layers and an intermediate layer that optically couples the first active layer and the second active layer. The first active layer, the intermediate layer, and the second active layer are arranged in that order in a predetermined axis direction. The semiconductor laser further includes a diffraction grating that is optically coupled with the first and second active layers of the semiconductor layer portion, a first electrode and a second electrode for injecting carriers into the first active layer and the second active layer, respectively, and a third electrode for supplying the intermediate layer with a current. The grating extends in the predetermined axis direction and has a period that is uniform in the predetermined axis direction.

Abstract: On a first region that is a part of one main face of a semiconductor substrate 1, a first semiconductor laser structure 10 is formed so as to have a first lower cladding layer 3, a first active layer 4 with a first quantum well structure and first upper cladding layers 5, 7, which are layered in this order from the semiconductor substrate side, thereby forming a first resonator. On a second region that is different from the first region, a second semiconductor laser structure 20 is formed so as to have a second lower cladding layer 13, a second active layer 14 with a second quantum well structure and a second upper cladding layer 15, 17, which are layered in this order, thereby forming a second resonator. End face coating films 31, 32 are formed on facets of the first and the second resonators, and a nitrogen-containing layer 30 is formed between the facets of the first and the second resonators and the facet coating film.

Abstract: A quantum cascade laser structure in accordance with the invention comprises a number of cascades (100), each of which comprises a number of alternately arranged quantum wells (110a to 110j) and barrier layers (105 to 105j). The material of at least one quantum well (110a to 110j) as well as the material of at least one barrier layer (105 to 105j) is under mechanical strain, with the respective strain being either a tensile strain or a compression strain. The quantum wells (110a to 110j) and barrier layers (105 to 105j) are engineered in the quantum cascade laser structure in accordance with the invention so that existing strains are largely compensated within a cascade (100). In the quantum cascade laser structure in accordance with the invention, each material of the quantum wells (110a to 110j) has only one constituent material and the material of at least one barrier layer (105d, 105e, 105f) has at least two constituent materials (111a, 111b, 112a, 112b, 113a, 113b).

Abstract: A semiconductor laser device has a red laser element and an infrared laser element on a substrate. The red laser element has a double hetero structure in which an InGaP-based or AlGaInP-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. The infrared laser element has a double hetero structure in which a GaAs-based or AlGaAs-based active layer is interposed between a first conductivity type cladding layer and a second conductivity type cladding layer having a ridge. Provided that a first electrode formed over the second conductivity type cladding layer has a width W1 in a direction perpendicular to a cavity length direction and a second electrode formed over the second conductivity type cladding layer has a width W2 in a direction perpendicular to a cavity length direction, the relations of W1>W2 and 80 ?m?W2?60 ?m are satisfied.

Abstract: An apparatus and method are disclosed for decreasing the spectral bandwidth of a semiconductor laser, such as a vertical cavity surface emitting laser.

Abstract: An array of optically coupled cavities (called micro-cavities) of a semiconductor laser are defined by either an etch and/or by a native oxide of an aluminum-bearing III-V semiconductor material and are arranged serially end-to-end along the longitudinal direction. An etch and/or native oxide defines a refractive index change for the longitudinal optical mode and confines the optical field within the micro-cavities, resulting in reflection and optical feedback distributed periodically along the laser stripe in the form of an optically coupled micro-cavity. The wavelength of emission of the laser is controlled by a combination of the length of the optical micro-cavities and the spacing between adjacent optical micro-cavities. Single-longitudinal-mode operation is exhibited over an extended drive current range. In one embodiment, two or more linear arrays of end-coupled micro-cavities are arranged in the longitudinal axis of the laser cavity to obtain a tunable laser.

Abstract: A method and structure for producing lasers having good optical wavefront characteristics, such as are needed for optical storage includes providing a laser wherein an output beam emerging from the laser front facet is essentially unobstructed by the edges of the semiconductor chip in order to prevent detrimental beam distortions. The semiconductor laser structure is epitaxially grown on a substrate with at least a lower cladding layer, an active layer, an upper cladding layer, and a contact layer. Dry etching through a lithographically defined mask produces a laser mesa of length lc and width bm. Another sequence of lithography and etching is used to form a ridge structure with width won top of the mesa. The etching step also forming mirrors, or facets, on the ends of the laser waveguide structures. The length ls and width bs of the chip can be selected as convenient values equal to or longer than the waveguide length lc and mesa width bm, respectively.

Abstract: The apparatus for extending or lengthening a laser pulse has a beam splitter. An incident laser pulse is split by the beam splitter into at least one first partial pulse and a second partial pulse. The first partial pulse is conducted through a delaying travel path section with a number of reflectors. The apparatus is characterized by a plurality of the variable delaying travel path sections which produce different length laser beam pulses from a single incident laser pulse.

Abstract: A method for producing high optical power density. Laser beams emitted from a plurality of laser bars are combined by spatial multiplexing to become substantially parallel with an optical axis. Each single laser bar includes one or more diode lasers. The slow axes of adjacent diode lasers of the single laser bar are substantially parallel with each other and the adjacent diode lasers emitting substantially to the same direction. The laser bars are arranged in two or more sectors around the optical axis. The width of the effective light-emitting near-field of at least one of the laser bars is less than 2.5 millimeters in the direction of the slow axis of the diode lasers of the at least one laser bar.

Abstract: A passively mode-locked, figure-eight laser is formed of all normal dispersion fiber, eliminating the need for using anomalous dispersion fiber. The fiber is selected to be polarization maintaining, with the remaining components of the laser (couplers, isolator, gain fiber) also formed as polarization maintaining elements. In one embodiment, a section of Yb-doped fiber is used as the gain element. An external modulation component (amplitude or phase) is preferably used to initiate the passive mode locking.

Abstract: The apparatus includes a diode laser and a current source interconnected with the diode laser. Two independent circuits in the current source are configured to limit current flowing through the diode laser. A first current limiter circuit configured to limit a current output from the current source to an anode of the diode laser, and an independent second current limiter circuit configured to limit a current return from a cathode of the diode laser to the current source so that laser output power does not exceed a specified maximum regardless of a single fault in either the first or second current limiter circuits.

Abstract: VCSEL array with a structure in which vertical cavity surface emitting devices are arranged on a substrate. The VCSEL array includes first and second optical devices. The second optical device receives light that is directed parallel to the substrate and emitted from the first optical device and converts the light into an electric signal when a voltage applied to the second optical device is switched to a reverse bias. The second optical device emits light that is directed parallel to the substrate when a voltage applied to the second optical device is switched to a forward bias.

Abstract: A narrow-band laser device for exposure apparatus that allows to reduce damage to, and to hence extend the life of, optical elements such as chamber windows, output coupling mirrors or the like. A ring resonator is provided in an amplification stage laser of the narrow-band laser device for exposure apparatus that comprises an oscillation stage laser and an amplification stage laser. An OC, a high reflection mirror and a high reflection mirror are arranged to be offset, for instance, relative to a longitudinal direction axis of discharge electrodes. As a result, the beam width of laser light injected through the OC of the amplification stage laser becomes wider as the beam shifts inside the ring resonator, in each round trip within the ring resonator. The energy density of laser light in the optical elements of the amplification stage laser becomes reduced thereby, thus prolonging the life of the optical elements.

Abstract: It is aimed to suppress a local increase of an energy density per unit time in a nonlinear crystal. A fundamental wave emitted from a fundamental wave laser light source is condensed by a condenser lens and incident on a nonlinear crystal 11 having a poled structure. By displacing a focus position of a fundamental wave 50 by means of a scanning mirror 21, a local increase of the energy density per unit time in the nonlinear crystal 11 is suppressed.

Abstract: There are disclosed compounds for assisting triplet absorption in a laser, such as a pulsed-dye laser, the compounds comprising at least one molecule chosen from nitroxides and nitrones. In one embodiment, the disclosed compounds may be mixed with the dye of a dye laser in an amount sufficient to assist in triplet absorption. In one embodiment, the nitroxide compound comprises tempol[4-hydroxy-2,2,6,6-tetramethyl-piperidinyloxy, free radical]. Also disclosed are methods of using the disclosed compounds to control the triplet absorption of a dye laser or improve the performance or life span of a gaseous or solid laser.