Abstract: A system for implanting ions into a target element including a source arrangement for producing an ion beam; a beam analyzing arrangement for receiving the ion beam and selectively separating various ion species in the beam on the basis of mass to produce an analyzed beam; and a beam resolving arrangement disposed in the path of the analyzed beam for permitting a preselected ion species to pass to the target element. The analyzing arrangement has an ion dispersion plane associated therewith. The source arrangement has an associated ion emitting envelope including an area of substantial extension in a plane parallel to the ion dispersion plane and producing ions entering said analyzing arrangement which are travelling substantially either toward or from a common apparent line object lying in a plane perpendicular to the ion dispersion plane.

Abstract: A method of photographically recording at high speed the far field pattern of a high energy infrared laser beam over a selected period of time for providing rapid repetitive samples of information on beam parameters such as far field beam intensity, jitter, and absolute beam size and power. A sample from a high energy infrared laser beam is directed into an enclosure that is light tight to visible radiation and contains an operating lensless movie camera loaded with suitable movie film. The infrared beam is focused on the film plane of the camera so that consecutive frames of the film are irradiated by the infrared beam each time the camera shutter is open. The period of irradiation is of sufficient duration to sensitize the film to visible radiation in the areas where the infrared radiation impinges on the film. The position of the camera shutter is detected and an electrical trigger signal generated just before the shutter is closed for each frame.

Abstract: The invention relates to a movable enclosure for the replacement and transportation of contaminated parts, as well as to a complementary confinement casing. The enclosure comprises a confinement body in which is received a cylinder having at least two cavities. Each cavity contains a gripping head, which can be introduced into an opening of the body and intended to be tightly arranged in the extension of the housing of a part to be replaced. The locking of the part onto the head is obtained by manipulating a pull handle located in the handling rod and used for displacement of each gripping head in its cavity. Application to interventions on nuclear installations located in confinement cells.

Abstract: An apparatus for electron beam lithography comprises at least one mask equipped with a polygonal aperture to be subjected to an electron beam from an electron beam generator, an electron lens system for demagnifying and imaging the polygonal aperture of the mask, and a solenoid coil for electron beam rotation adjustment placed between the mask and the final-stage electron lens.

Abstract: Apparatus for flood exposing deep ultraviolet (DUV) photoresist material from a xenon lamp source providing pulsed radiation in the DUV range formed into an annular beam by a paraboloid reflector. The radiation beam is substantially collimated with a preferred divergence of 4.degree. for mask (imaging) development. Wafers having single-layer or multi-layer photoresist material sensitive to UV radiation are flood exposed to achieve, with high resolution, imaging, even if the photoresist layers are thin. The apparatus is also used to cure DUV-sensitive photoresist material with the radiation beam having the same or preferably greater divergence. The photoresist material is flood exposed for either imaging or curing that is both rapid and uniform.

Abstract: An electron beam pattern transfer system is disclosed which includes a photoelectric transducing mask disposed within a vacuum container and adapted to transfer a photoelectron beam pattern corresponding to a pattern of the mask onto a sample according to an amount of an incident light, a DC voltage generator connected to vary a voltage applied between the mask and the sample, and a focusing coil of a superconductive magnet for creating a magnetic field of a predetermined intensity between the mask and the sample. When a mask-to-sample distance and/or magnetic field intensity varies undesirably, the variation is electrically detected by detectors. In order to compensate for the defocusing of the photoelectron beam pattern on the sample due to the above-mentioned variation, a microprocessor automatically calculates an amount of correction with respect to the intensity of the electric field between the mask and the sample, on a real-time basis and supplies its control signal to the DC voltage generator.

Abstract: A wafer having chips for determining the position of the wafer, at least one of the chips comprising a plurality of first-direction line groups formed on one side portion of the chip and a plurality of second-direction line groups formed on the other region of the chip, the first-direction line groups and the second-direction line groups being orthogonal to each other, each of the first-direction line groups comprising one first-direction main mark and one first-direction code mark expressing the position of the one first-direction main mark, each of the second-direction line groups comprising one second-direction main mark and one second-direction code mark, whereby, by scanning only one of the first-direction line groups and only one of the second-direction line groups by means of an electron beam, the position of the wafer is determined.

Abstract: Focused ion beam microfabrication column (10) produces an ion beam from ion source (12), focuses the beam by objective lens (24) onto the plane of electrode (36). ExB filter (44) separates out the ion species at a low energy portion of the beam. The beam of selected species is first accelerated by energy central lens (38) which has a controllable potential for controlling the final beam energy to the target. The beam is accelerated by final accelerator lens (54) and is demagnified and focused on the target by that lens. Beam deflector (64) deflects the beam for programmed ion beam work on the target (60).

Abstract: The present invention device is used for curing photopolymerizable products and includes a converging type cold mirror, an ultraviolet light source, a heat absorber behind the cold mirror, a back deflector behind the heat absorber, and a blocker tube and an ultraviolet light permeable window located in front of the ultraviolet light source. The various elements are arranged so as to provide four different air channels (two longitudinal currents and two cross currents) for cooling, enabling the device to be operated at greatly reduced temperatures as compared to prior art air cooled devices.

Abstract: An ion implantation apparatus and method are disclosed for reducing contamination of doubly-charged ions by singly-charged ions. A liner, with a grooved or smooth surface, formed of beryllium or graphite reduces secondary electron scattering into the ion beam. Solid red phosphorus reduces the operating vacuum thereby reducing contamination.

Abstract: A method is described by means of which a UV radiation beam is modified by passing a stream of a gas around the radiation source. The device for carrying out this method includes a gas duct connectable at its inlet to a source of gas such as a hot-air blower. A UV-radiation source with a reflector is located at the outlet of the duct so as to permit passage of a stream of gas in the direction of the emitted radiation beam and a part of the gas stream is deflected around the source. A baffle plate permeable to radiation is located in front of the radiation source to create an increased dynamic gas pressure.

Abstract: An analysis system for a scanning electron microscope having a backscattered electron detector. The output of the detector is amplified, processed by an analogue to digital converter, multi-channel analyser, and digital conversion and processing circuit to generate a signal indicative of the atomic number factor of the specimen. Calculation of stoichiometric valence combinations of non-elemental specimens is also disclosed. A calibration device is also disclosed.

Abstract: A minaturized self limiting corona generator for charging a receiver surface includes a plurality of corona emitting wires housed in respective biased conductive shields with the wires being spaced farther from the receiver surface than the wire-to-shield spacing in order to provide self limiting of surface potential on the receiver surface.

Abstract: Disclosed is a method for measuring the position of a silicon wafer as a workpiece to be exposed. The method is suitably used in an electron beam exposure system. A wafer has a plurality of chip alignment marks which respectively designate a plurality of chip field areas, included in a dicing line area. When the wafer is contained ion a holder and is fixed in the exposure system, edge portions of the wafer are partially scanned with the electron beam to roughly measure the position of the wafer. In accordance with this wafer position data, a wafer surface portion required for detecting only the marks is defined within the dicing line area. In the mark detection with the electron beam, the electron beam irradiates only the defined wafer surface portion of the wafer surface, thereby providing highly precise measurement of the wafer position and avoiding undesirable irritation of the circuit formation area.

Abstract: Two lens focused ion beam column (10) has an accelerating lens (20) which carries a potential to focus an image of the liquid metal ion source (14) on the mass analyzer slit (26) with a magnification of about unity. Munro lens (36) accelerates the beam of selected ion species and demagnifies the image through a long working distance to provide an ion writing spot of less than about 1000 .ANG. size.

Abstract: A magnetic rotator lens for rotating the momenta of particles transverse to the direction of the beam is disclosed. The rotator lens includes a solenoid axially aligned with the beam and employs a magnetic permeable flux return structure surrounding the solenoid. The flux return structure includes beam entrance and exit plates with magnetic permeable and charged particle permeable portions forming the beam entrance and exit ports of the magnetic lens. In a typical example, the beam entrance magnetic permeable and beam permeable portion of the pole piece structure is formed by a grid of magnetic permeable members. The magnetic permeable and beam permeable portions of the pole structures terminate the axial magnetic field without introducing any substantial transverse components to the magnetic field which would otherwise produce undesired rotation of the beam shape.

Abstract: In a method of and an apparatus for handling a charged particle beam, at least one of a signal representative of the astigmatism and a signal for correction of the astigmatism is obtained by computation on the basis of values detected under a certain condition from signal particles derived from an object which is moved repeatedly at least two directions with respect to a charged particle beam. The amount and direction of astigmatism thus computed are displayed respectively for manual correction. Astigmatism correction and focusing can be also carried out automatically.

Abstract: A radiation dispersing cavity has its interior surface covered by a plurality of deformations, each of which acts as a dispersing element which is small with respect to the effective diameter of the cavity and yet large with respect to the wavelengths processed by the integrating cavity. The interior surface of the cavity is coated with a material which provides the proper reflectivity for the wavelengths of interest.

Abstract: An ion mobility spectrometer system with improved specificity. The ion mobility spectrometer has a reaction chamber and a drift chamber, an ionization source disposed in the reaction chamber, an injection grid separating said reaction and drift chambers, a collector electrode disposed in the drift chamber and a sample input injecting the sample and carrier into the reaction chamber.A source injects acetone and/or carbon tetrachloride as reagents into the carrier gas prior to entering the sample input. The acetone reactant forms a dimer ion in the positive ion spectrum which impedes the clustering of water and provides a narrow fixed peak in the ion spectrum which serves as a reference point in the ion spectrum for the algorithm used in the electronic control unit generating an output characteristic of the sample. The carbon tetrachloride reactant forms a (H.sub.2 O).sub.n Cl.sup.- ion which provides a reference in the negative ion spectrum for the algorithm used in the electronic control unit.

Abstract: A variable axis immersion lens electron beam projection system shifts the electron beam while eliminating rapidly changing fields, eddy currents and stray magnetic fields in the target area. The electron beam projection system includes an electron beam source and a deflection means. A variable axes immersion lens for focusing the electron beam includes an upper pole piece, and a lower pole piece having a non-zero bore section, a zero bore section and an opening therebetween for inserting the target into the lens. The variable axis immersion lens provides an axial magnetic projection field which has zero first derivative in the vicinity of the target area. A magnetic compensation yoke, positioned within the bore of the upper pole piece produces a magnetic compensation field which is proportional to the first derivative of the axial magnetic projection field.