Patents Examined by Peter B. Kim
  • Patent number: 11656554
    Abstract: The present invention provides an exposure apparatus that exposes a substrate via an original, including an illumination optical system configured to illuminate the original, and a projection optical system configured to project a pattern of the original onto the substrate, wherein the illumination optical system illuminates the original by illumination light which includes a first portion that enters an incident pupil of the projection optical system and a second portion which enters a region outside the incident pupil, and the first portion and the second portion are separated from each other on an incident pupil plane of the projection optical system.
    Type: Grant
    Filed: October 13, 2020
    Date of Patent: May 23, 2023
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Yuhei Sumiyoshi, Daisuke Kobayashi
  • Patent number: 11656555
    Abstract: An illumination adjustment apparatus, to adjust a cross slot illumination of a beam in a lithographic apparatus, includes a plurality of fingers to adjust the cross slot illumination to conform to a selected intensity profile. Each finger has a distal edge that includes at least two segments. The two segments form an indentation of the distal edge.
    Type: Grant
    Filed: April 14, 2020
    Date of Patent: May 23, 2023
    Assignees: ASML HOLDING N.V., ASML NETHERLANDS B V
    Inventors: Janardan Nath, Kalyan Kumar Mankala, Todd R. Downey, Joseph Harry Lyons, Ozer Unluhisarcikli, Alexander Harris Ledbetter, Nicholas Stephen Apone, Tian Gang
  • Patent number: 11644756
    Abstract: Methods and systems for determining information for a specimen are provided. Certain embodiments relate to bump height 3D inspection and metrology using deep learning artificial intelligence. For example, one embodiment includes a deep learning (DL) model configured for predicting height of one or more 3D structures formed on a specimen based on one or more images of the specimen generated by an imaging subsystem. One or more computer systems are configured for determining information for the specimen based on the predicted height. Determining the information may include, for example, determining if any of the 3D structures are defective based on the predicted height. In another example, the information determined for the specimen may include an average height metric for the one or more 3D structures.
    Type: Grant
    Filed: August 4, 2021
    Date of Patent: May 9, 2023
    Assignee: KLA Corp.
    Inventors: Scott A. Young, Kris Bhaskar, Lena Nicolaides
  • Patent number: 11640116
    Abstract: A method including determining a type of structural asymmetry of the target from measured values of the target, and performing a simulation of optical measurement of the target to determine a value of an asymmetry parameter associated with the asymmetry type. A method including performing a simulation of optical measurement of a target to determine a value of an asymmetry parameter associated with a type of structural asymmetry of the target determined from measured values of the target, and analyzing a sensitivity of the asymmetry parameter to change in a target formation parameter associated with the target. A method including determining a structural asymmetry parameter of a target using a measured parameter of radiation diffracted by the target, and determining a property of a measurement beam of the target based on the structural asymmetry parameter that is least sensitive to change in a target formation parameter associated with the target.
    Type: Grant
    Filed: June 5, 2020
    Date of Patent: May 2, 2023
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Arie Jeffrey Den Boef, Kaustuve Bhattacharyya
  • Patent number: 11640118
    Abstract: A method of pattern alignment is provided. The method includes identifying a reference pattern positioned below a working surface of a wafer. The wafer is exposed to a first pattern of actinic radiation. The first pattern is a first component of a composite pattern. The first pattern of actinic radiation is aligned using the reference pattern. The wafer is exposed to a second pattern of actinic radiation. The second pattern is a second component of the composite pattern and exposed adjacent to the first pattern. The second pattern of actinic radiation is aligned with the first pattern of actinic radiation using the reference pattern.
    Type: Grant
    Filed: August 17, 2021
    Date of Patent: May 2, 2023
    Assignee: Tokyo Electron Limited
    Inventor: Anton J. Devilliers
  • Patent number: 11635680
    Abstract: An overlay pattern includes a light-transmitting region and a first light-proof region. The first light-proof region and the light-transmitting region are arranged on a same plane, and an area of the first light-proof region is larger than an area of the light-transmitting region. An orthographic projection of the first light-proof region on the plane and an orthographic projection of the light-transmitting region on the plane do not overlap and form a first rectangular region.
    Type: Grant
    Filed: August 18, 2021
    Date of Patent: April 25, 2023
    Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
    Inventor: Mei-Li Wang
  • Patent number: 11635390
    Abstract: To suitably determine a measurement cycle at which to measure cracks that occur in structures formed from concrete or the like.
    Type: Grant
    Filed: February 11, 2021
    Date of Patent: April 25, 2023
    Assignee: 3M Innovative Properties Company
    Inventors: Tasuku Nakayama, Kazuma Nuno
  • Patent number: 11619876
    Abstract: Disclosed is a system of inspecting a pattern defect in a scanning-type reflective extreme ultraviolet (EUV) mask. The system may include a photoelectron generator, a source light generator configured to generate a coherent EUV light from electrons generated by the photoelectron generator, a mask positioning structure configured to move the reflective EUV mask, an optic module placed on the mask positioning structure and configured to reflect and focus the EUV light, a zoneplate lens array configured to focus the EUV light on the reflective EUV mask, and a detection array placed near the zoneplate lens array to measure an energy of light reflected from the mask. The entire pattern region of the reflective EUV mask may be inspected by moving the reflective EUV mask using the mask positioning structure to more efficiently inspect a pattern defect in the EUV mask.
    Type: Grant
    Filed: November 11, 2021
    Date of Patent: April 4, 2023
    Assignees: SAMSUNG ELECTRONICS CO., LTD., E-SOL, Inc.
    Inventor: Donggun Lee
  • Patent number: 11604416
    Abstract: A laser processing method of performing laser processing on a transparent material that is transparent to ultraviolet light by using a laser processing system includes: performing relative positioning of a transfer position of a transfer image and the transparent material in an optical axis direction of a pulse laser beam so that the transfer position is set at a position inside the transparent material at a predetermined depth ?Zsf from a surface of the transparent material in the optical axis direction; and irradiating the transparent material with the pulse laser beam having a pulse width of 1 ns to 100 ns inclusive and a beam diameter of 10 ?m to 150 ?m inclusive at the transfer position.
    Type: Grant
    Filed: October 26, 2021
    Date of Patent: March 14, 2023
    Assignee: Gigaphoton Inc.
    Inventors: Koji Kakizaki, Masakazu Kobayashi, Akira Suwa, Osamu Wakabayashi
  • Patent number: 11604419
    Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.
    Type: Grant
    Filed: April 27, 2021
    Date of Patent: March 14, 2023
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Joannes Jitse Venselaar, Anagnostis Tsiatmas, Samee Ur Rehman, Paul Christiaan Hinnen, Jean-Pierre Agnes Henricus Marie Vaessen, Nicolas Mauricio Weiss, Gonzalo Roberto Sanguinetti, Thomai Zacharopoulou, Martijn Maria Zaal
  • Patent number: 11579532
    Abstract: In corner sections of first to fourth quadrants whose origin point is a center of an upper surface of a stage, three each of two-dimensional heads are provided. The three each of two-dimensional heads include one first head and two second heads. The stage is driven, while measuring a position of the stage using three first heads that face a two-dimensional grating of a scale plate provided above the stage from the four first heads, and during the driving, difference data of measurement values of the two second heads with respect to the first head in a measurement direction are taken in for head groups to which the three first heads belong, respectively, and using the difference data, grid errors are calibrated.
    Type: Grant
    Filed: December 28, 2021
    Date of Patent: February 14, 2023
    Assignee: NIKON CORPORATION
    Inventor: Yuichi Shibazaki
  • Patent number: 11579536
    Abstract: An information processing apparatus includes an acquisition unit configured to acquire process information about a substrate process, the process information including process data and a process condition, and a display control unit configured to control a display on a display apparatus based on the process information acquired by the acquisition unit, wherein the display control unit selectively displays, on the display apparatus, a first screen that displays the process data of a lot including a plurality of substrates on a lot-by-lot basis and a second screen that displays the process data of a first lot on a substrate-by-substrate basis, the first lot being a lot designated by a user from the lot displayed on the first screen.
    Type: Grant
    Filed: April 23, 2021
    Date of Patent: February 14, 2023
    Assignee: Canon Kabushiki Kaisha
    Inventors: Takahiro Takiguchi, Kenta Kita
  • Patent number: 11574939
    Abstract: Disclosed are a method for manufacturing an array substrate, an array substrate and a display device. The method includes the following operations: sequentially forming a gate, a gate insulation layer, an active layer, an ohmic contact layer and a metal layer on a base substrate; forming a photolithography mask on the metal layer, a thickness of the photolithography mask being between 1.7 ?m and 1.8 ?m; exposing the photolithography mask through a mask plate to make a uniformity of the photolithography mask in a half-exposed area of the mask plate reach a preset uniformity; and manufacturing the array substrate based on the exposed photolithography mask.
    Type: Grant
    Filed: January 27, 2021
    Date of Patent: February 7, 2023
    Assignees: BEIHAI HKC OPTOELECTRONICS TECHNOLOGY CO., LTD., HKC Corporation Limited
    Inventors: Yuming Xia, En-tsung Cho, Wei Li
  • Patent number: 11567416
    Abstract: An inspection apparatus includes: first and second stage parts on which a housing container housing substrates is mounted; first and second inspection parts having an imaging unit imaging the substrate; a first transfer region provided with a first transfer mechanism performing a first operation of transferring the substrate between the first stage part and the first inspection part; and a second transfer region provided with a second transfer mechanism performing a second operation of transferring the substrate between the second stage part and the second inspection part. In plan view, the first and second stage part are at positions not overlapping with each other, the first and second inspection part are at positions not overlapping with each other, and the first and second transfer region are at positions different from each other so as to perform the first and second operation in parallel.
    Type: Grant
    Filed: June 29, 2021
    Date of Patent: January 31, 2023
    Assignee: Tokyo Electron Limited
    Inventors: Toru Tokimatsu, Takuya Tani, Takashi Murakami
  • Patent number: 11561467
    Abstract: A reflectivity and transmittance measuring device includes: an EUV light source for outputting EUV light with a wavelength ranging from 5 nm to 15 nm; a multilayer reflection zone plate having an EUV reflection multilayer film, which is a planar substrate, and a zone plate pattern; and an EUV lighting unit for creating EUV illumination light by obtaining 1st diffraction light reflected after radiating EUV light output from the EUV light source to the multilayer reflection zone plate.
    Type: Grant
    Filed: January 7, 2022
    Date of Patent: January 24, 2023
    Assignee: ESOL Inc.
    Inventor: Dong Gun Lee
  • Patent number: 11561477
    Abstract: A method including: obtaining data based an optical proximity correction for a spatially shifted version of a training design pattern; and training a machine learning model configured to predict optical proximity corrections for design patterns using data regarding the training design pattern and the data based on the optical proximity correction for the spatially shifted version of the training design pattern.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: January 24, 2023
    Assignee: ASML Netherlands B.V.
    Inventors: Jing Su, Yen-Wen Lu, Ya Luo
  • Patent number: 11556067
    Abstract: A contamination trap for use in a debris mitigation system of a radiation source, the contamination trap comprising a plurality of vanes configured to trap fuel debris emitted from a plasma formation region of the radiation source; wherein at least one vane or each vane of the plurality of vanes comprises a material comprising a thermal conductivity above 30 W m?1K?1.
    Type: Grant
    Filed: March 10, 2020
    Date of Patent: January 17, 2023
    Assignee: ASML Netherlands B.V.
    Inventors: Sander Catharina Reinier Derks, Daniel Jozef Maria Direcks, Maurice Wilhelmus Leonardus Hendricus Feijts, Pieter Gerardus Mathijs Hoeijmakers, Katja Cornelia Joanna Clasina Moors, Violeta Navarro Paredes, William Peter Van Drent, Jan Steven Christiaan Westerlaken
  • Patent number: 11556061
    Abstract: A multiple charged particle beam writing apparatus includes a margined block region generation circuit to generate plural margined block regions each formed by adding a margin region to the periphery of each block region of plural block regions obtained by dividing the writing region of the target object, a detection circuit to detect a defective beam in multiple charged particle beams, a specifying circuit to specify, for each defective beam detected, a position irradiated with the defective beam, and an affiliation determination circuit to determine a margined block region, in the plural margined block regions, to which the position irradiated with the defective beam belongs, based on conditions set according to a sub-block region, in plural sub-block regions acquired by dividing the margined block region, in which the position irradiated with the defective beam in the multiple charged particle beams is located.
    Type: Grant
    Filed: September 24, 2021
    Date of Patent: January 17, 2023
    Assignee: NuFlare Technology, Inc.
    Inventors: Yasuo Kato, Ryoh Kawana
  • Patent number: 11550229
    Abstract: A method of treating a surface of a reticle includes retrieving a reticle from a reticle library and transferring the reticle to a treatment device. The surface of the reticle is treated in the treatment device by irradiating the surface of the reticle with UV radiation while ozone fluid is over the surface of the reticle for a predetermined irradiation time. After the treatment, the reticle is transferred to an exposure device for lithography operation to generate a photo resist pattern on a wafer. A surface of the wafer is imaged to generate an image of the photo resist pattern on the wafer. The generated image of the photo resist pattern is analyzed to determine critical dimension uniformity (CDU) of the photo resist pattern. The predetermined irradiation time is increased if the CDU does not satisfy a threshold CDU.
    Type: Grant
    Filed: June 18, 2021
    Date of Patent: January 10, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi-Chen Su, Tzu-Yi Wang, Ta-Cheng Lien
  • Patent number: 11543793
    Abstract: Embodiments of the invention include methods and structures for controlling developer critical dimension (DCD) variations across a wafer surface. Aspects of the invention include an apparatus having developer tubing and an internal cam. The internal cam is coupled to a fixed axis. A flexible divider is positioned between the developer tubing and the internal cam. The flexible divider is coupled to the internal cam such that rotation of the internal cam about the fixed axis is operable to change an inner diameter of the developer tubing.
    Type: Grant
    Filed: November 22, 2019
    Date of Patent: January 3, 2023
    Assignee: International Business Machines Corporation
    Inventors: Richard C. Johnson, Hao Tang, Yongan Xu