Abstract: Provided is an information processing apparatus that includes an estimation unit and a correction unit. The estimation unit estimates a motion vector of a distance measurement target based on distance information on a distance to the distance measurement target input from a distance measuring device that measures the distance to the distance measurement target and motion information of the distance measuring device input from a motion detection device that detects a motion of the distance measuring device. The correction unit corrects the distance information based on the motion vector of the distance measurement target estimated by the estimation unit.

Abstract: A method includes irradiating a target structure with sequential illumination shots, directing scattered beams from the target structure towards an imaging detector, generating a detection signal using the imaging detector, and determining a property of the target structure based on at least the detection signal. An integration time for each illumination shot of the sequential illumination shots is selected so to reduce a low frequency error.

Abstract: Disclosed is a metrology system comprising: a pre-alignment metrology tool operable to measure a plurality of targets on a substrate to obtain measurement data; and a processing unit. The processing unit is operable to: process said measurement data to determine for each target at least one position distribution which describes variation of said position value over at least part of said target; and determine a measurement correction from said at least one position distribution which corrects for within-target variation in each of said targets, said measurement correction for correcting measurements performed by an alignment sensor.

Abstract: Reticle pods include inner pods where motion limiting features restrict translational motion of the cover and the baseplate relative to one another. The motion limiting features are in addition to gross alignment features included in the inner pod. The motion limiting features resist the translational motion before the gross alignment features would resist the motion. Motion limiting features can include elastic bodies providing friction against contact surfaces, or pins received on elastic contact surfaces or in diaphragms or motion limiting cups.

Abstract: The disclosure addresses provision of a pellicle demounting method having excellent property with respect to reduction of contamination of a photomask. A method of demounting a pellicle, the method is provided which includes: providing a stack including a photomask, a pellicle frame, and a pellicle film that are arranged in this order; providing an electrode; and a demounting step including disposing the stack and the electrode such that the pellicle film in the stack and the electrode face each other, and applying a voltage to the electrode to generate an electrostatic attractive force, which attracts the pellicle film in a direction toward the electrode, thereby demounting the pellicle film from the photomask in the stack.

Abstract: A measurement device acquires first point cloud data at a first measurement position and second point cloud data at a second measurement position; determines a rotation axis for positional adjustment; determines, based on the rotation axis, the first point cloud data, and the second point cloud data, an evaluation function indicating a region that is a union set of one or more columnar bodies as an evaluation function representing desirability of a positional adjustment result; and calculates a positional adjustment parameter that optimizes the evaluation function based on the rotation axis, the first point cloud data, and the second point cloud data.

Abstract: The present disclosure generally relates to a system and a method for detecting a defect in a specimen. More particularly, the present disclosure relates to a lithography exposure system and a method for detecting a dispensing error in a wafer The present disclosure provides a system for detecting a defect in a specimen having a lithography exposure tool including a measurement unit and a stage, the measurement unit is configured to obtain topography data of the specimen placed on the stage by illumination of a surface of the specimen with an optical signal, and a processor configured to generate a statistical data from the topography data and produce a defect notification if the statistical data is outside of a control limit.

Abstract: An object holder configured to support an object, the object holder comprising: a core body comprising a plurality of burls having distal ends in a support plane for supporting the object; an electrostatic sheet between the burls, the electrostatic sheet comprising an electrode sandwiched between dielectric layers; and a circumferential barrier for reducing outflow of gas escaping from space between the object and the core body.

Abstract: A system for monitoring and controlling an EUV light source includes a first temperature sensor, a signal processor, and a process controller. The first temperature sensor includes a portion inserted into a space surrounded by a plurality of vanes through a vane of the plurality of vanes, and obtains an ambient temperature that decreases with time as a function of tin contamination coating on the inserted portion. The signal processor determines an excess tin debris deposition on the vane based on the obtained chamber ambient temperature. The process controller activates a vane cleaning action upon being informed of the excess tin debris deposition by the signal processor, thereby improving availability of the EUV light source tool and reducing risks of tin pollution on other tools such as a reticle.

Abstract: Methods and apparatus for detecting metrology data are provided herein. For example, an apparatus comprises a substrate support configured to support a substrate and another substrate disposed on the substrate, an incoherent light source configured to transmit an illumination beam through the substrate and the another substrate, a set of optics configured to direct the illumination beam when transmitted through the substrate and the another substrate, an actuator operably coupled to the substrate support and configured to move the substrate and another substrate back and forth in a scanning pattern, and a sensor operably coupled to the actuator, synchronized therewith, and configured to receive the illumination beam from the set of optics to obtain subsurface images of the substrate and the another substrate.

Abstract: Methods of inspecting a material include moving the material and identifying a defect location of a defect. Methods include moving a camera along a second travel path in a second travel direction such that a field of view (FOV) of the camera moves relative to the material along the second travel path to match the defect location. Methods include passing the defect through the field of view (FOV) as the material moves and capturing images of the defect with the camera as the material moves and the defect moves through the FOV. The images include a first image of a first major surface, a second image of a second major surface, and a third image of an intermediate portion of the material between the first major surface and the second major surface. Methods include reviewing the plurality of images to characterize the defect.

Abstract: An overlay error measurement method includes disposing a lower-layer pattern over a substrate that includes disposing a first pattern having a first plurality of first sub-patterns extending in a first interval along a first direction and being arranged with a first pitch in a second direction crossing the first direction. The method includes disposing a second pattern having a second plurality of second sub-patterns extending in a second interval along the first direction and being arranged with a second pitch, smaller than the first pitch, in the second direction crossing the first direction. The second sub-patterns are disposed interleaved between the first sub-patterns. The method includes disposing an upper-layer pattern including a third pattern having the first pitch and at least partially overlapping with the lower-layer pattern over the lower-layer pattern and determining an overlay error between the lower-layer pattern and the upper-layer pattern.

Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.

Abstract: The present disclosure includes edge defect detection via image analytics. A method includes identifying an image of an edge of a susceptor pocket formed by a susceptor of a substrate processing system. The method further includes predicting, based on the image, whether property values of the edge of the susceptor meet threshold values. The method further includes, responsive to the property values of the edge meeting threshold values, causing performance of a corrective action associated with the susceptor.

Abstract: An optical sensing device includes a first sensor, a second sensor, a third sensor and a fourth sensor for sensing light to generate a first sensing signal, a second sensing signal, a third sensing signal and a fourth sensing signal, respectively. A spectrum of a coating of the first sensor includes a first peak of a X spectrum. A spectrum of a coating of the second sensor includes a second peak of the X spectrum. A spectrum of a coating of the third sensor includes a Y spectrum. A spectrum of a coating of the fourth sensor includes a Z spectrum. The first sensing signal and the second sensing signal are used to determine a X output value. The third sensing signal and the fourth sensing signal are used to determine a Y output value and a Z output value, respectively.

Abstract: A system for oblique incidence nanopatterning a sample using a grating beam-splitter is disclosed. The system also includes a grating beam-splitter on a tip-tilt adjustable mount. The system also includes a photoresist coated sample mounted on a tip-tilt-z adjustable mount. The system also includes an alignment system to allow adjustment of the tip-tilt adjustable mounts so that a surface of the grating beam-splitter and a surface of the photoresist coated sample are substantially parallel. The system also includes a laser operating at a wavelength suitable for exposure of the photoresist. The system also includes an optical system to deliver a laser beam at oblique incidence to the grating beam-splitter to expose the photoresist coated sample. The system also includes means to control an exposure dose of the laser beam. A system using two grating beam-splitters to provide increased alignment tolerance is also disclosed.

Abstract: An ingot evaluation method and a detecting apparatus are provided. Defect information of a wafer is obtained from an ingot. The defect information includes a position of at least one defect identified by optical detection. A center-of-gravity position of the defect is determined according to the defect information. Uniformity of the defect is evaluated according to the center-of-gravity position. The uniformity is related to quality of a processed wafer.

Abstract: A method including: obtaining data based an optical proximity correction for a spatially shifted version of a training design pattern; and training a machine learning model configured to predict optical proximity corrections for design patterns using data regarding the training design pattern and the data based on the optical proximity correction for the spatially shifted version of the training design pattern.

Abstract: A reticle carrier described herein is configured to quickly discharge the residual charge on a reticle so as to reduce, minimize, and/or prevent particles in the reticle carrier from being attracted to and/or transferred to the reticle. In particular, the reticle carrier may be configured to provide reduced capacitance between an inner baseplate of the reticle carrier and the reticle. The reduction in capacitance may reduce the resistance-capacitance (RC) time constant for discharging the residual charge on the reticle, which may increase the discharge speed for discharging the residual charge through support pins of the reticle carrier. The increase in discharge speed may reduce the likelihood that an electrostatic force in the reticle carrier may attract particles in the reticle carrier to the reticle.

Abstract: Disclosed is a method of improving a measurement of a parameter of interest. The method comprises obtaining metrology data comprising a plurality of measured values of the parameter of interest, relating to one or more targets on a substrate, each measured value relating to a different measurement combination of a target of said one or more targets and a measurement condition used to measure that target and asymmetry metric data relating to asymmetry for said one or more targets. A respective relationship is determined for each of said measurement combinations relating a true value for the parameter of interest to the asymmetry metric data, based on an assumption that there is a common true value for the parameter of interest over said measurement combinations. These relationships are used to improve a measurement of the parameter of interest.