Abstract: Disclosed is a laser device. The laser device includes a pulse generator which irradiates a laser beam between a high reflector mirror and an output coupler mirror to amplify and resonate the laser beam, a pulse output section which receives a laser beam pulse amplified and resonated through the output coupler mirror to output the laser beam pulse, and a Q switch which moves backward or forward in a direction perpendicular to a path of the laser beam formed between the pulse generator and the high reflector mirror. The output coupler mirror includes first and second mirrors provided on a base plate. Positions of the first and second mirrors are selectively changed as the Q switch moves backward or forward.

Abstract: A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

Abstract: A surface-emitting laser device is disclosed that includes a substrate connected to a heat sink; a first reflective layer formed of a semiconductor distributed Bragg reflector on the substrate; a first cavity spacer layer formed in contact with the first reflective layer; an active layer formed in contact with the first cavity spacer layer; a second cavity spacer layer formed in contact with the active layer; and a second reflective layer formed of a semiconductor distributed Bragg reflector in contact with the second cavity spacer layer. The first cavity spacer layer includes a semiconductor material having a thermal conductivity greater than the thermal conductivity of a semiconductor material forming the second cavity spacer layer.

Abstract: Systems, apparatus, devices and methods for pumping rod shaped solid state lasers with interchangeable arrays of diode laser pump sources that allows for rapid change of the diode laser array pump source without affecting or altering the solid state laser resonator. An embodiment includes a roof top structure having a light scattering reflection roof-top portion, sides with an interior specular reflecting surface and base opposite the top portion. The cavity includes a laser rod within the top portion of the structure positioned between opposing side walls, laser rod optics, and a pump source connected with the base plate to pump the laser rod. The pump cavity can include a mechanism for automating the rapid interchangeability of the pump source.

Abstract: A light emission device includes: first and second clad layers sandwiching an active layer; a first electrode connected with the first clad layer; and second electrodes connected with the second clad layer, at least part of the active layer forms gain areas corresponding to the second electrodes, the gain areas extend from a first side to a second side of the active layer while inclined to a vertical of the first side, at least first and second gain areas form a set of gain areas and a plurality of sets are provided, the first and second gain areas in each set are disposed perpendicular to a direction extending from the first side to the second side, the second electrodes above the first gain areas are interconnected by a first common electrode, and the second electrodes above the second gain areas are interconnected by a second common electrode.

Abstract: A method for deriving precise control over laser power of an optical pickup unit (OPU) includes: providing an analog-to-digital converter (ADC) within an automatic power calibration (APC) circuit to derive a path gain and/or a path offset from the APC circuit; and selectively performing compensation according to the gain and/or the path offset, in order to maintain precision of a relationship between the laser power and a target command utilized for controlling the laser power. An associated APC circuit comprising an ADC and at least one compensation module is further provided. The ADC is utilized for deriving a path gain and/or a path offset from the APC circuit. The compensation module is utilized for selectively performing compensation according to the path gain and/or the path offset, in order to control the laser power by a target command.

Abstract: A method of making a nitride semiconductor laser comprises forming a first InGaN film for an active layer on a gallium nitride based semiconductor region, and the first InGaN film has a first thickness. In the formation of the first InGaN film, a first gallium raw material, a first indium raw material, and a first nitrogen raw material are supplied to a reactor to deposit a first InGaN for forming the first InGaN film at a first temperature, and the first InGaN has a thickness thinner than the first thickness. Next, the first InGaN is heat-treated at a second temperature lower than the first temperature in the reactor, while supplying a second indium raw material and a second nitrogen raw material to the reactor. Then, after the heat treatment, a second InGaN is deposited at least once to form the first InGaN film.

Abstract: An MO-PA fiber laser having a master oscillator; and a first power amplifier which uses as a gain medium, a rare earth-doped optical fiber which is connected to a later stage of the master oscillator, wherein the MO-PA fiber laser has a wavelength conversion portion between the master oscillator and the power amplifier, and has a wavelength filter between the wavelength conversion portion and the master oscillator which only allows wavelength components of pulse light emitted from the master oscillator to pass, thereby making it possible to prevent breakage to a fiber laser which is caused by reflection light without using high-cost optical components.

Abstract: An active photonic device assembly comprising a substrate and a waveguide entity provided on the substrate. The active photonic device assembly further comprises a contact layer of a first III/V material epitaxially grown laterally on top of the waveguide entity from opening fillings in turn provided on a substrate surface. An active photonic device is provided on the contact layer.

Abstract: A pulse of laser light is switched out of a pulse train and spatially dispersed into its constituent wavelengths. The pulse is collimated to a suitable size and then diffracted by high groove density multilayer dielectric gratings. This imparts a different angle to each individual wavelength so that, when brought to the far field with a lens, the colors have spread out in a linear arrangement. The distance between wavelengths (resolution) can be tailored for the specific laser and application by altering the number of times the beam strikes the diffraction gratings, the groove density of the gratings and the focal length of the lens. End portions of the linear arrangement are each directed to a respective detector, which converts the signal to a 1 if the level meets a set-point, and a 0 if the level does not. If both detectors produces a 1, then the pulse train is allowed to propagate into an optical system.

Abstract: Designs and techniques for constructing and operating femtosecond pulse lasers are provided. One example of a laser engine includes an oscillator that generates and outputs a beam of femtosecond seed pulses, a stretcher-compressor that stretches a duration of the seed pulses, and an amplifier that receives the stretched seed pulses, amplifies an amplitude of selected stretched seed pulses to create amplified stretched pulses, and outputs a laser beam of amplified stretched pulses back to the stretcher-compressor that compresses their duration and outputs a laser beam of femtosecond pulses. The amplifier includes a dispersion controller that compensates a dispersion of the amplified stretched pulses, making the repetition rate of the laser adjustable between procedures or according to the speed of scanning. The laser engine can be compact with a total optical path of less than 500 meters, and have a low number of optical elements, e.g. less than 50.

Abstract: An integrated semiconductor optical-emitting device includes a surface-emission laser diode and an EA-type semiconductor optical modulator integrated commonly on a GaAs substrate in a direction perpendicular to the GaAs substrate.

Abstract: A surface-emitting laser element includes a substrate; a plurality of semiconductor layers laminated on the substrate, the plural semiconductor layers including a resonator structural body including an active layer and semiconductor multilayer film reflection mirrors having the resonator structural body sandwiched therebetween; an electrode provided in such a manner as to surround a emitting region on a surface of the surface-emitting laser element from which light is emitted; and a dielectric film provided in the emitting region such that a reflection ratio of a peripheral part of the emitting region is different from a reflection ratio of a center part of the emitting region. Edge portions that are near edges of the dielectric film are tilted with respect to the surface.

Abstract: A side emitting semiconductor package includes a two-sided electric circuit formed on a silicon substrate of the package, and a plurality of semiconductor light emitting devices bonded on two bilateral surfaces of the electric circuit to provide a surface mounted device with two light emitting sides.

Abstract: A high power integrated fiber laser system includes cascaded amplifiers that utilize low numerical aperture fiber amplifiers. The system is rugged and lightweight.

Abstract: An optical fiber component comprises an optical fiber that transmits light; and a coreless fiber that is connected to the end surface of the optical fiber and prevents foreign matter from adhering to the end surface of the optical fiber. The optical fiber and the coreless fiber are connected by fusing one end surface of the coreless fiber to the end surface of the optical fiber. The core section on the end surface of the optical fiber is no longer exposed to the air. Moreover, the power density of light that is input at the core of the optical fiber is greatly reduced more than when there is no coreless fiber, so it is possible to prevent compounds of C, H and O from adhering to the core of the optical fiber.

Abstract: The invention relates to a laser system including a nonlinear crystal having a first length portion and a second length portion. The nonlinear crystal disposed to receive input light from the laser for converting the input light into frequency converted light; wherein the nonlinear crystal is configured so that the first length portion of the nonlinear crystal is phase matching for the input light and the frequency converted light, and the second length portion of the nonlinear crystal is phase mismatching for the input light and the frequency converted light. Phase mismatching means may include a temperature controlling board, a clamp, or electrodes.

Abstract: There is provided a mode-locked laser device including: a resonator; a solid-state laser medium that is disposed in the resonator and outputs oscillation light in accordance with the incidence of excitation light; a saturable absorber that is disposed in the resonator and induces soliton mode-locking; a group velocity dispersion correction component that is disposed in the resonator and controls group velocity dispersion in the resonator; and an excitation portion that causes excitation light to be incident at the solid-state laser medium, wherein a resonator length of the resonator is at least a resonator length with which soliton mode-locking is inducible and is less than a resonator length with which non-soliton mode-locking is inducible.

Abstract: A gallium nitride-based semiconductor optical device is provided that includes an indium-containing gallium nitride-based semiconductor layer that exhibit low piezoelectric effect and high crystal quality. The gallium nitride-based semiconductor optical device 11a includes a GaN support base 13, a GaN-based semiconductor region 15, and well layers 19. A primary surface 13a tilts from a surface orthogonal to a reference axis that extends in a direction from one crystal axis of the m-axis and the a-axis of GaN toward the other crystal axis. The tilt angle AOFF is 0.05 degree or more to less than 15 degrees. The angle AOFF is equal to the angle defined by a vector VM and a vector VN. The inclination of the primary surface is shown by a typical m-plane SM and m-axis vector VM. The GaN-based semiconductor region 15 is provided on the primary surface 13a. In the well layers 19 in an active layer 17, both the m-plane and the a-plane of the well layers 19 tilt from a normal axis AN of the primary surface 13a.

Abstract: A diode pumped solid-state laser for high shock, high vibration environments such as those found in laser ignition systems for artillery systems.