Abstract: An electronic device may include an antenna, a receiver, and a transmission line path that couples the antenna to the receiver. A peak detector may receive a radio-frequency signal from the transmission line path and may output a DC voltage indicative of a peak voltage level of the signal. The peak detector may include a pair of square law transistors having source-drain terminals coupled to an output of the peak detector. The peak detector may include a differential pair of transistors coupled between a power supply voltage and the output. The peak detector may include diode-connected transistors coupled between the source-drain terminals and gate terminals of the square law transistors. The diode-connected transistors may cause noise current to flow along feedback loop paths from the source-drain terminals onto the gate terminals of the square law transistors. This may remove noise from the output of the peak detector.

Abstract: An unapodized interdigital transducer apparatus, system, and associated methods. The apparatus includes a substrate, a pair of first electrodes oppositely positioned on the substrate, where an aperture is formed between the pair of first electrodes, and a plurality of variable length second electrodes arranged using a predetermined pattern defined by each second electrode in the plurality of second electrodes being coupled to one of the first electrodes in the pair of first electrodes and being configured to extend into the aperture. At least one second electrode in the plurality of second electrodes coupled to one of the first electrodes in the pair of first electrodes has the same length as at least another second electrode in the plurality of second electrodes coupled to another first electrode in the pair of first electrodes. A surface acoustic wave is generated upon application of electrical current to the pair of the first electrodes.

Abstract: In certain examples, methods and apparatus are directed to a resonator-based circuit which, in operation, has an electrically-conductive band (“band”) at least partially surrounding a center electrode which includes the piezoelectric material of the circuit's resonator. In particular examples, the band acts to electrically load vibrations near resonance and consequently, spurious mode suppression is realized. In more particular example embodiments, the band maintains TE mode while eliminating lateral spurious tones, and in one application-specific example, the resonator-based circuitry and the electrical-conductive band are to provide of facilitate piezoelectric power conversion.

Abstract: A bulk acoustic wave resonant structure and a preparation method therefor, and an acoustic wave device are provided. The bulk acoustic wave resonant structure includes: a substrate; a reflection structure, a first electrode, a piezoelectric layer and a second electrode, which are successively located on the substrate, wherein the first electrode comprises a first sub-electrode located in a first region and a second sub-electrode located in a second region other than the first region, and the piezoelectric layer respectively comes into direct contact with the first sub-electrode and the second electrode in the first region; and a first gap, which is located between the piezoelectric layer and the second sub-electrode, wherein an orthographic projection of the first gap on the substrate surrounds the first region.

Abstract: A crystal resonator is provided that includes a crystal substrate having first and second main surfaces; a first and second comb electrodes on the first main surface and that each include electrode fingers that are alternately arranged. The first comb electrode includes a first electrode finger and the second comb electrode includes a second electrode finger adjacent to the first electrode finger. Thickness shear vibration is excited at a portion overlapping with a gap between the first and second electrode fingers, depending on a potential difference between the first and second electrode fingers. A duty ratio (L1+L2 (/(2×P1) on a first main surface side is from 0.15 to 0.33 inclusive or from 0.62 to 0.82 inclusive where a width of the first electrode finger is denoted as L1, a width of the second electrode finger is and a distance between the first and second electrode fingers is P1.

Abstract: The present disclosure relates to piezoelectric resonator, a piezoelectric material for a piezoelectric resonator, and a method for manufacturing a piezoelectric resonator. In particular, it relates to piezoelectric resonator comprising a piezoelectric material, where the piezoelectric material is configured to have an improved shear wave velocity.

Abstract: A transition arrangement (100) comprising a first conductive layer (110), a second conductive layer (120), and a third conductive layer (130) in a stacked layer configuration. The first conducive layer (110) comprises a first ridge (111) arranged along a first waveguiding path, and a first metamaterial structure (113) arranged along a perimeter of the first waveguide path. The second conducive layer (120) comprises a second ridge (121) arranged along a second waveguiding path, and a second metamaterial structure (123) arranged along a perimeter of the second waveguide path. The third conductive layer (130) is arranged in between the first and the second conductive layers (110, 120). The third conductive layer comprises respective planar surfaces facing the first and the second first metamaterial structures (113,123), respectively.

Abstract: Acoustic impedance tuning in a wireless transmission circuit (a.k.a. wireless device) is provided. In aspects discussed herein, the wireless transmission circuit includes an acoustic load-line tuning circuit that can be configured to adapt a load-line impedance presenting to a power amplifier circuit. In embodiments disclosed herein, the acoustic load-line tuning circuit can be dynamically controlled to provide impedance matching between a power amplifier circuit and other load-line circuits (e.g., filter circuits, antenna switch circuits, and/or antenna circuits). As a result, it is possible to reduce a signal reflection resulting from an impedance mismatch between the power amplifier circuit and the load-line circuits, thus helping to improve performance of the wireless transmission circuit.

Abstract: An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, and an IDT electrode including busbars and electrode fingers, and a mass-adding film on the piezoelectric layer. In plan view as seen in a stacking direction in which the support and the piezoelectric layer are stacked, an acoustic reflector overlaps at least a portion of the IDT electrode. d/p is less than or equal to about 0.5, where d is a thickness of the piezoelectric layer and p is a center-to-center distance between adjacent electrode fingers. A region in which adjacent electrode fingers overlap each other when seen from an electrode-finger-facing direction is a crossing region. Regions between the crossing region and the pair of busbars include first and second gap regions. The mass-adding film overlaps the gap region in plan view and is on the second main surface of the piezoelectric layer.

Abstract: A coplanar waveguide (CPW) structure on a micro-electromechanical system (MEMS) device may comprise a glass device substrate that hosts a MEMS component on a first surface of the glass device substrate. The glass device substrate may have an associated set of metal layers that are used for fabrication of the MEMS component. The CPW structure may further comprise a glass cap having a top metal layer and a bottom metal layer. The CPW structure may further comprise a CPW signal path on the first surface of the glass device substrate, and a CPW ground plane on the first surface of the glass device substrate along a side of the CPW signal path. The CPW ground plane may comprise the bottom metal layer of the glass cap and at least one metal layer of the set of metal layers that are used for fabrication of the at least one MEMS component.

Abstract: A method of making a surface acoustic wave package includes bonding a piezoelectric layer over a substrate and attaching a metal structure over the substrate, with the piezoelectric layer positioned between at least a portion of the substrate and at least a portion of the metal structure. The method also includes removing (e.g., etching) an outer boundary of the piezoelectric layer so that a resulting outer edge of the piezoelectric layer is spaced inward of an inner edge of the metal package (e.g., the piezoelectric layer does not contact the metal package). The method inhibit damage to the piezoelectric layer due to a stress differential between the substrate and the thermally conductive structure during a packaging process.

Abstract: According to one embodiment, a transmission line includes first and second conductive lines, first and second conductive layers and a first conductive member. At least a part of the first conductive line extends in a first direction. The second conductive line is electrically connected to the first conductive line. At least a part of the second conductive line extends along the first direction. The second conductive layer is electrically connected to the first conductive layer. The second conductive layer includes a first partial region, a second partial region, and a third partial region. A direction from the first partial region to the third partial region and a direction from the second partial region to the third partial region are along the first direction. The second conductive line is between the first conductive layer and the third partial region in a second direction crossing the first direction.

Abstract: A tracker module is provided that includes a module laminate, an IC chip disposed at the module laminate, and a filter circuit including a plurality of inductors. The IC chip includes at least one switch included in a switched-capacitor circuit and at least one switch included in a supply modulator. The plurality of inductors include a first inductor and a second inductor that are disposed at the module laminate. The first inductor and the second inductor are adjacent to each other. A magnetic flux direction of the first inductor and a magnetic flux direction of the second inductor are perpendicular to each other.

Abstract: An acoustic wave device assembly is disclosed. The acoustic wave device assembly can include a first acoustic wave device that includes a first substrate, a first piezoelectric layer, a first solid acoustic mirror that is disposed between the first substrate and the first piezoelectric layer, and a first interdigital transducer electrode that is embedded in the piezoelectric layer. The acoustic wave device assembly can include a second acoustic wave device that includes a second substrate, a second piezoelectric layer, a second solid acoustic mirror that is disposed between the second substrate and the second piezoelectric layer, and a second interdigital transducer electrode that is in contact with the second piezoelectric layer. The second acoustic wave device is stacked over the first acoustic wave device. The first acoustic wave device and the second acoustic wave device are spaced by a spacer assembly such that a cavity is formed between the first acoustic wave device and the second acoustic wave device.

Abstract: An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, and a functional electrode on the piezoelectric layer and including at least one pair of electrodes. The support includes a cavity portion overlapping at least a portion of the functional electrode in plan view. The piezoelectric layer includes a membrane portion overlapping the cavity portion in plan view, and a supported portion supported by the support. A boundary covering electrode is provided on the piezoelectric layer over an entire or substantially an entire portion overlapping a boundary between the membrane portion and the supported portion in plan view.

Abstract: A digital phase shifter (100) includes a bend-type connection unit (e.g., a connection unit (20-1)) connecting a first digital phase shift circuit (e.g., a digital phase shift circuit (10-10)) located at an end portion of a first digital phase shift circuit group and a second digital phase shift circuit (e.g., a digital phase shift circuit (10-11)) located at an end portion of a second digital phase shift circuit group, and a capacitor (50) is connected in parallel to at least one of a first connection line of the connection unit (20), a position in the vicinity of a connection position between signal lines of two adjacent digital phase shift circuits (10) constituting the first digital phase shift circuit group, and a position in the vicinity of a connection position between signal lines of two adjacent digital phase shift circuits (10) constituting the second digital phase shift circuit group.

Abstract: Sub-threshold current reduction circuit (SCRC) switches and related apparatuses and methods are disclosed. An apparatus includes a first set of SCRC switches and a second set of SCRC switches electrically connected between power supply lines and power reception lines. The first set of SCRC switches is configured to electrically connect the power supply lines to the power reception lines in the first operational mode and the second operational mode. The second set of SCRC switches is configured to electrically connect the power supply lines to the power reception lines in the first operational mode and electrically isolate the power supply lines from the power reception lines in the second operational mode. Activation of the first set of SCRC switches is staggered in time with activation of the second set of SCRC switches. The second set of SCRC switches is spaced among the first set of SCRC switches.

Abstract: Disclosed are a Cartesian curve configuration-based bulk acoustic wave resonator and a bulk acoustic wave filter, belonging to the technical field of resonators. The Cartesian curve configuration-based bulk acoustic wave resonator includes a substrate, a support layer, a bottom electrode, a piezoelectric layer, and a top electrode stacked sequentially, with a cavity disposed between the substrate and the support layer. Contour shapes of overlapping portions of the bottom electrode and the piezoelectric layer and of overlapping portions of the piezoelectric layer and the top electrode are both symmetrical closed figures and the closed figure is comprised of at least one Cartesian curve. The Cartesian curve configuration-based bulk acoustic wave resonator according to the present disclosure allows the resonator to generate fewer vibration nodes, thereby reducing energy loss and greatly improving the performance of the resonator.

Abstract: Aspects include high q resonator devices and associated systems and methods. In one aspect, a device includes first and second busbars. The device includes a first electrode finger coupled to the first busbar and extending in a first direction towards the second busbar without touching the second busbar, where the first electrode finger comprises a finger tip having a first shape, a first stub electrode finger coupled to the second busbar and extending in a second direction opposite the first direction towards the finger tip of the first electrode finger, where the first stub electrode finger comprises a first end coupled to the second busbar and a second end, and where the second end comprises a stub tip having a second shape different than the first shape.

Abstract: The present disclosure provides a reading device for superconducting qubit, including a qubit, a reading cavity and a Josephson junction, where the qubit is coupled with the reading cavity through the Josephson junction.