Abstract: Optically isolated micromachined (MEMS) switches and related methods are described. The optically isolated MEMS switches described herein may be used to provide isolation between electronic devices. For example, the optically isolated MEMS switches of the types described herein can enable the use of separate grounds between the receiving electronic device and the control circuitry. Isolation of high-voltage signals and high-voltage power supplies can be achieved by using an optical isolator and a MEMS switch, where the optical isolator controls the state of the MEMS switch. In some embodiments, utilizing optical isolators to provide high voltages, the need for electric high-voltage sources such as high-voltage power supplies and charge pumps may be removed, thus removing the cause of potential damage to the receiving electronic device. In one example, the optical isolator and the MEMS switch may be co-packaged on the same substrate.

Abstract: A three-terminal avalanche photodiode provides a first controllable voltage drop across a light absorbing region and a second, independently controllable, voltage drop across a photocurrent amplifying region. The absorbing region may also have a different composition from the amplifying region, allowing further independent optimization of the two functional regions. An insulating layer blocks leakage paths, redirecting photocurrent toward the region(s) of highest avalanche gain. The resulting high-gain, low-bias avalanche photodiodes may be fabricated in integrated optical circuits using commercial CMOS processes, operated by power supplies common to mature computer architecture, and used for optical interconnects, light sensing, and other applications.

Abstract: Embodiments of the invention provide an improved biosensor for biological or chemical analysis. According to embodiments of the invention, backside illumination (BSI) complementary metal-oxide-semiconductor (CMOS) image sensors can be used to effectively analyze and measure fluorescence or chemiluminescence of a sample. This measured value can be used to help identify a sample. Embodiments of the invention also provide methods of manufacturing an improved biosensor for biological or chemical analysis and systems and methods of DNA sequencing.

Abstract: In order to provide an optical encoder with high resolution, the optical encoder includes: a rotary scale provided with a grating pattern having a first radial pattern and a plurality of concentric circular patterns disposed at predetermined intervals; and a light receiving element which detects a first interference fringe formed by the first pattern having a first period in the circumferential direction, a second interference fringe which is diffracted in a direction of the first interference fringe by a grating pattern having a second period in the circumferential direction disposed at a different radial position so that the second interference fringe has a period closer to the first period than the second period.

Abstract: An exemplary non-invasive measurement system includes a single-photon counting camera and a processor. The single-photon counting camera includes an array of SPAD detectors configured to detect, during a sequence of gated time intervals, coherent continuous light that exits a body after the light enters and scatters within the body, and output a plurality of electronic signals representative of the detected light. The processor is configured to generate, based on the electronic signals, a sequence of speckle pattern image frames corresponding to the gated time intervals. Other exemplary non-invasive measurement systems are also described.

Abstract: Methods and systems for germanium-on-silicon photodetectors without germanium layer contacts are disclosed and may include, in a semiconductor die having a photodetector, where the photodetector includes an n-type silicon layer, a germanium layer, a p-type silicon layer, and a metal contact on each of the n-type silicon layer and the p-type silicon layer: receiving an optical signal, absorbing the optical signal in the germanium layer, generating an electrical signal from the absorbed optical signal, and communicating the electrical signal out of the photodetector via the n-type silicon layer and the p-type silicon layer. The photodetector may include a horizontal or vertical junction double heterostructure where the germanium layer is above the n-type and p-type silicon layers. An intrinsically-doped silicon layer may be below the germanium layer between the n-type silicon layer and the p-type silicon layer. A top portion of the germanium layer may be p-doped.

Abstract: A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.

Abstract: There is provided an optical system comprising a light conduit. The light conduit comprises a first light pipe, a second light pipe, and a first bridge to mechanically couple the first light pipe to the second light pipe. The first light pipe has a first inlet to receive a first input light signal and a first outlet to emit at least a portion of the first input light signal to form a first output light signal. Moreover, the second light pipe has a second inlet to receive a second input light signal and a second outlet to emit at least a portion of the second input light signal to form a second output light signal. Furthermore, the first bridge has a first end mechanically coupled to the first light pipe and a second end mechanically coupled to the second light pipe.

Abstract: A device for cancelling undesired fractions in a detected signal may include a first region having an output node and including a light sensitive sensor configured to detect a first signal and an analogue to digital converter coupled to the output node. A second region may be switchably coupled to the first region based on a first control signal to the first region. The second region may include a storage device configured to store a signal based on the detection of the first signal. The second region may include an output node coupled to the sensor. The second may be configured to provide a compensation signal based on the stored signal to the light sensitive sensor during detection of a second signal.

Abstract: The invention relates to a sensor device for scanning laser processing of a workpiece by means of a laser beam deflected about a pivot point, said device comprising a holding device and at least two sensors, wherein the holding device is formed by a matrix- or honeycomb-shaped arrangement of sleeves, consisting of individual sleeves whose sleeve axes intersect at a point of intersection (P) outside the holding device, and the at least two sensors each being arranged in one of the sleeves such that their sensor axis coincides with the sleeve axis. The holding device advantageously is a monolithic component produced in a generative manufacturing process.

Abstract: An electromagnetic wave detection apparatus (10) includes an irradiator (11), a first detector (17), a propagation unit (20), a memory (13), and a controller (14). The irradiator (11) irradiates electromagnetic waves. The first detector (17) detects reflected waves of the electromagnetic waves irradiated onto an object (ob). The propagation unit (20) includes propagation elements (px). By irradiation position of the electromagnetic waves irradiated onto the object (ob), the propagation elements (px) switch between propagating and not propagating the reflected waves of the electromagnetic waves towards the first detector (17). The memory (13) stores related information. The controller (14) updates the related information based on the position of the propagation element (px) that is propagating the reflected waves toward the first detector (17) when the first detector (17) detects the reflected waves.

Abstract: A photodetector includes a first cell for converting incident light into electric charges, the first cell including a first semiconductor layer, a second semiconductor layer and a first substrate interposing the first semiconductor layer with the second semiconductor layer; and a second cell for converting incident light into electric charges, the second cell including a third semiconductor layer, a fourth semiconductor layer, and a second substrate interposing the third semiconductor layer with the fourth semiconductor layer; wherein the second substrate is larger in thickness than the first substrate.

Abstract: In one example, an apparatus comprises: a lens assembly comprising one or more polymer layers, each layer including a lens portion and an extension portion and an image sensor positioned below the lens assembly and bonded to the lens assembly via a bonding layer and configured to sense light that passes through the lens portion of the one or more polymer layers.

Abstract: A threshold detection circuit includes a plurality of capacitors. A plurality of switching circuits is coupled to the capacitors such that a first end of each of the capacitors is coupled to a corresponding photon sensor during detection intervals, and the first end of each capacitor is coupled to a variable initialization value during reset intervals. A threshold number of the capacitors are initialized to a first value and the remaining capacitors are initialized to a second value during reset intervals. A comparator is coupled to a second of the capacitors to generate a detection event in response to the threshold number of photon sensors sensing one or more incident photons during detection intervals.

Abstract: A display device including a display panel having a first area, a second area spaced from the first area, and a bending area disposed between the first and second areas, a first sensing pattern overlapped with the first area, a second sensing pattern spaced apart from the first sensing pattern and overlapped with the second area, and a first non-functional pattern overlapped with the bending area and spaced apart from each of the first and second sensing patterns.

Abstract: A scanning system can include an illuminator, configured to produce an illuminating beam, and a fixation unit, configured to mechanically support a sample to be measured within the illuminating beam. The illuminating beam can reflect off the sample to produce reflected light. The system can further include a sensor, positioned angularly away from the illuminator, configured to receive the reflected light. The illuminating beam can include a wavelength spectrum having a FWHM less than 100 nm. In some examples, the fixation unit can be positioned based, in part, on a position of the illuminator and the sensor. In some examples, the sensor can include at least one imaging element that produces an image of the sample. In some examples, the illuminating beam can include a calibration pattern. In some examples, the illuminating beam and the reflected light can be angularly separated between ten degrees and fifteen degrees.

Abstract: A method for determining an amount of ambient light illumination is disclosed. The method includes: estimating a contribution per color component in an optical sensing region of an input frame to be displayed on a display device, wherein the optical sensing region corresponds to a location of an optical sensor in the display device, wherein the input frame comprises digital information for each color component for each pixel of the input frame; causing the optical sensor to detect an amount of illumination in the optical sensing region based on illuminating the display device with a representation of the input frame; and determining the amount of ambient light illumination based on the estimated contribution per color component in the optical sensing region of the input frame and the amount of illumination in the optical sensing region detected by the optical sensor.

Abstract: Embodiments of a system and method are disclosed. In an embodiment, a LiDAR (Light Detection and Ranging) system that can include a sensor circuit comprising a controller unit, a transmitter, a gating circuit, and a receiver element, wherein the gating circuit is connected to the controller unit and to the receiver element, wherein signals detected by the sensor circuit correspond to at least one physical object located in an operating region with respect to a location of the sensor circuit and based on multiple measurements. The gating circuit can range-gate the receiver element based on a range-gating waveform, and the controller unit can provide a phase-delay parameter for phase shifting the range-gating waveform with different phase values relative to a light signal transmitted by the transmitter for different measurements by the sensor circuit.

Abstract: The present invention provides a photoelectric conversion element including a photoelectric conversion film having a narrow half-width of absorption peak and an excellent photoelectric conversion efficiency, and an imaging element, an optical sensor, and a compound. The photoelectric conversion element according to the present invention includes a conductive film, a photoelectric conversion film, and a transparent conductive film, in this order, in which the photoelectric conversion film contains a compound represented by Formula (1).

Abstract: A photodetection circuit includes a single photon avalanche diode (SPAD) having a cathode coupled to a high voltage supply through a quench resistance and an anode coupled to a first node, a capacitive deep trench isolation capacitor coupled between the first node and ground, and a first n-channel transistor. The first n-channel transistor has a drain coupled to the first node, a source coupled to ground, and a gate coupled to a resistance control signal. A second n-channel transistor has a drain coupled to the first node, a source coupled to ground, and a gate coupled to a second node. An inverter has an input coupled to the first node and an output coupled to an intermediate node. A current starved inverter has an input coupled to the intermediate node and an output coupled to the second node.