Abstract: In a method of manufacturing an optical system that comprises at least one beam deflection unit, at least one diaphragm element, and at least one holder for fixing the beam deflection element and the diaphragm element in a predefined arrangement relative to one another, the beam deflection element and a screening element are provided. The beam deflection element and the screening element are fixed by means of the holder such that the actual arrangement of the screening element relative to the beam deflection element corresponds to the predefined arrangement of the diaphragm element relative to the beam deflection element. The beam deflection element is irradiated by the processing light beams such that after a deflection by the beam deflection element the processing light beams are incident on a functional zone of the screening element and change its optical properties by energy emission.

Abstract: A driving optical system is used to observe a disturbance of a wavefront of reference light received from a target and generate a wavefront in a conjugate relationship with the wavefront. A plurality of control signals are generated on a basis of a plurality of Zernike coefficients calculated as a Zernike polynomial which approximates the wavefront disturbance in order to respectively drive a plurality of deformable mirrors included in the driving optical system. An adaptive optical system is provided which can optically compensate a wavefront disturbance derived from an atmospheric fluctuation even in a case of radiating laser light to a target moving at a high speed.

Abstract: Methods and systems for a light source arrangement supporting direct coupling to a photonically enabled complementary metal-oxide semiconductor (CMOS) chip are disclosed. The arrangement may include a laser, a microlens, a turning mirror, reciprocal and/or non-reciprocal polarization rotators, and an optical bench. The laser may generate an optical signal that may be focused utilizing the microlens. The optical signal may be reflected at an angle defined by the turning mirror, and may be transmitted out of the light source arrangement to one or more grating couplers in the chip. The laser may include a feedback insensitive laser. The light source arrangement may include two electro-thermal interfaces between the optical bench, the laser, and a lid affixed to the optical bench. The turning mirror may be integrated in a lid affixed to the optical bench or may be integrated in the optical bench.

Abstract: A device including a plurality of epitaxial chips is disclosed. An epitaxial chip can have one or more of a light source and a detector, where the detector can be configured to measure the optical properties of the light emitted by a light source. In some examples, one or more epitaxial chips can have one or more optical properties that differ from other epitaxial chips. The epitaxial chips can be dependently operable. For example, the detector located on one epitaxial chip can be configured for measuring the optical properties of light emitted by a light source located on another epitaxial chip by way of one or more optical signals. The collection of epitaxial chips can also allow detection of a plurality of laser outputs, where two or more epitaxial chips can have different material and/or optical properties.

Abstract: An optoelectronic device that includes at least one adjustable optical damping member arranged upstream of a photodetector and damps the optical radiation passing to the photodetector. The device is configured so that an electrical output of an amplifier is connected directly or indirectly to the adjustable optical damping member. An output signal of the amplifier or a control signal formed therewith drives the optical damping member, and the photodetector, the amplifier and the damping member are integrated in the same semiconductor substrate.

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.

Abstract: An optical sensor includes at least one pair of a light source and a photodetector, the light source and the photodetector facing each other and having an opening between the light source and the photodetector; and a base substrate disposed on or below the at least one pair of the light source and the photodetector, the base substrate including a contact sensor positioned in an area corresponding to the opening.

Abstract: The present disclosure provides an electronic packaging structure. A photonic die is disposed on an electronic package, and an optical guide die is not disposed on the electronic package. As the optical guide die malfunctions, only the optical guide die, rather than the whole electronic package and the photonic die, which may still function well, needs to be replaced. Therefore, the replacement cost is reduced, and the lifespan of the electronic packaging structure is increased. The present disclosure also provides a method for manufacturing the electronic packaging structure.

Abstract: Aspects of the subject disclosure may include, for example, a photodetecting device that includes a bottom gate, a bilayer semiconductor formed on the bottom gate, and a top gate above the bilayer semiconductor comprising a polymer electrolyte. Other embodiments are disclosed.

Abstract: A detector for determining a position of at least one object is disclosed and includes at least one sensor element having a matrix of optical sensors, the optical sensors each having a light-sensitive area. Each optical sensor is designed to generate at least one sensor signal in response to an illumination of its respective light-sensitive area by a light beam propagating from the object to the detector. The sensor element is adapted to determine at least one reflection image. The detector also includes at least one evaluation device adapted to select at least one reflection feature of the reflection image at least one first image position in the reflection image. The evaluation device is adapted to determine at least one reference feature in at least one reference image and at least one second image position in the reference image corresponding to the at least one reflection feature.

Abstract: Systems, methods and devices are for optical imaging are described. A system includes a light source and a light detection unit. The light source includes a light-emitting device and a first spectral filter opposite the light emitting device. The first spectral filter includes at least one dielectric filter and has a first angular dependence of a transmission passband. The light source further includes at least one reflector adjacent side surfaces of the light emitting device. The light detection unit includes an optical sensor and a second spectral filter opposite the optical sensor. The second spatial filter has a second angular dependence of a transmission passband that is matched to the first angular dependence.

Abstract: Various embodiments of sensors are described that exhibit several spectral features that together offer coverage of a wavelength range corresponding to the desired strain dynamic range (or temperature range) of a system. The spectral features arise from a Fabry-Perot interferometer formed by two overlapping chirped FBGs, the free-spectral range (FSR) of which varies with wavelength. The spectral features may be differentiated due to a combination of spacing and slope of the overlapped, chirped gratings.

Abstract: A method of operating an electro-optic sensor includes disposing at least a portion of the electro-optic sensor in a liquid chamber, providing light from a light source of the electro-optic sensor at a first intensity, driving a light detector of the electro-optic sensor at a first sensitivity level, receiving, via the light detector, a first amount of light from the light source; determining whether liquid is present in the liquid chamber according to the first amount of light, providing light from the light source at a second intensity, driving the light detector at a second sensitivity level, receiving, via the light detector, a second amount of light from the light source, and/or confirming whether liquid is present in the liquid chamber according to the second amount of light. The first sensitivity level may be different from the second sensitivity level.

Abstract: An optical concentration measurement device includes an LED light source, alight receiving unit having a rectangular light receiving surface and outputting a detection signal representing intensity of received light, and light guiding units guiding light emitted by the LED light source to the light receiving unit, wherein a shape on the rectangular light receiving surface of light radiated on the light receiving surface is rectangular, the optical concentration measurement device measures concentration of an object to be measured existing in a light path formed by the light guiding units, based on the detection signal output from the light receiving unit, and the light guiding units guide light at a diffraction limit or greater in such a way that area of the light on the rectangular light receiving surface is ½ or less of area of the rectangular light receiving surface.

Abstract: A sensor has plurality of pixels arranged in a plurality of rows and columns with row control circuitry for controlling which one of said rows is activated and column control circuitry for controlling which of said pixels in said activated row is to be activated. The column circuitry has memory configured to store information indication as to which of the pixels are defective, wherein each of the pixels has a photodiode and a plurality of transistors which control the activation of the photodiode. A first transistor is configured to be controlled by a column enable signal while a second transistor is configured to be controlled by a row select signal.

Abstract: Provided is a position detection sensor. In a first pixel part, as an incident position is closer to a first end of a first pixel pair group in a second direction, an intensity of a first electric signal decreases. In a second pixel part, as the incident position is closer to the first end, an intensity of a second electric signal increases. In a third pixel part, as the incident position is closer to a second end of a second pixel pair group in a first direction, an intensity of a third electric signal decreases. In a fourth pixel part, as the incident position is closer to the second end, an intensity of a fourth electric signal increases. A calculation unit calculates a second position on the basis of the first and second electric signals, and calculates a first position on the basis of the third and fourth electric signals.

Abstract: An analog-to-digital converter comprises a sigma-delta modulator; and an ADC filter configured to store a plurality of partial sums as respective entries in a plurality of lookup tables, retrieve at least one of the plurality of partial sums based on an output of the sigma-delta modulator, and calculate a filter output by adding retrieved ones of the plurality of partial sums together.

Abstract: An imaging device comprises a first chip that includes a first semiconductor substrate including a photoelectric conversion region. The first chip includes a first insulating layer including a first multilayer wiring electrically connected to the photoelectric conversion region. The first multilayer wiring includes a first vertical signal line (VSL1) to output a first pixel signal, and a first wiring. The imaging device includes a second chip including a second semiconductor substrate including a logic circuit. The second chip includes a second insulating layer including a second multilayer wiring electrically connected to the logic circuit. The second multilayer wiring includes a second wiring. The first chip and the second chip are bonded to one another, and, in a plan view, the first wiring and the second wiring overlap with at least a portion of the first vertical signal line (VSL1).

Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

Abstract: An imaging apparatus includes a plurality of pixels, a signal holding unit, first and second control electrodes. Each of the plurality of pixels includes a photoelectric conversion unit, and an amplification element to amplify signals based on signal charges generated by the photoelectric conversion unit, in which the plurality of pixels output signals for performing a phase contrast detection type of focal point detection. The signal holding unit is in an electrical pathway between an output node of the photoelectric conversion unit and an input node of the amplification element, in which signals for performing the phase contrast detection type of focal point detection are held. The first control electrode is configured to transfer a signal of the photoelectric conversion unit to the signal holding unit. The second control electrode is configured to transfer a signal for performing the phase difference detection type of focal point detection.