Abstract: Provided is a film forming apparatus including a placement stage; a processing container that defines a processing chamber which accommodates the placement stage and includes a first region and a second region; a gas supply section that supplies a precursor gas to the first region; and a plasma generation section that generates plasma of a reactive gas in the second region. The plasma generation section includes: at least one waveguide that defines a wave guiding path above the placement stage and above the second region, a microwave generator connected to the at least one waveguide, and a plurality of protrusions made of a dielectric material. The protrusions pass through a plurality of openings formed in a lower conductive part of the at least one waveguide to extend into the second region. The protrusions are arranged in a radial direction with respect an axis of the placement stage.

Abstract: In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to peform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring.

Abstract: The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses.

Abstract: A sample stage includes plural pushup pins that move a sample up/down above the stage, a recessed and protruding dielectric film on which the sample is loaded, a feeding port disposed on the film and through which gas is fed to a gap between the sample and the film, and openings of through-holes in which the pushup pins are housed, and the stage is connected to a feeding and evacuation conduit including a feeding path that communicates with the port and through which gas fed to the gap flows, an evacuation path that communicates with the opening and through which gas fed to the gap is discharged, and a connection path through which the feeding path and the evacuation path communicate. With communication between the feeding path and the evacuation path via the connection path interrupted, gas from the feeding path is fed to the gap and into the through-hole via the gap.

Abstract: Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.

Abstract: A substrate processing apparatus includes a process chamber in which etching by a corrosive gas is performed to remove a film formed therein after a film formation process, a susceptor disposed in the process chamber and having a substrate loading portion, a stationary shaft passing through the susceptor, a first securing member securing the susceptor at an upper side, a second securing member securing the susceptor at a lower side, a pressing member disposed below the susceptor to urge the stationary shaft in a downward direction while urging the second securing member in an upward direction, and a stopping member formed above the susceptor and engaged with the stationary shaft to urge the first securing member in cooperation with the pressing member. The susceptor, the first securing member and the stopping member are made of a material having corrosion resistance higher than the pressing member.

Abstract: A polycrystalline CaF2 member includes a combined assembly of a plurality of polycrystalline bodies made from CaF2 that are pressure bonded together.

Abstract: The plasma processing apparatus includes: a processing chamber disposed inside a vacuum vessel; a first high-frequency power supply outputting a first high-frequency power for supplying an electric field to generate a plasma for use in processing a sample to be processed inside the processing chamber; a sample stage disposed inside the processing chamber with the sample placed on an upper surface thereof; a second high-frequency power supply intermittently outputting a second high-frequency power for generating a bias potential to an electrode disposed inside the sample stage and capable of variably adjusting the output time; and a function to adjust operation of the plasma processing apparatus using a result of detection of a temporal change in waveform of current or voltage in a transient state of the second high-frequency power in synchronism with start of the intermittent output of the second high-frequency power.

Abstract: The present disclosure provides a substrate support assembly includes a substrate pedestal having an upper surface for receiving and supporting a substrate, a cover plate disposed on the substrate support pedestal, and two or more lift pins movably disposed through the substrate support pedestal and the cover plate. The cover plate includes a disk body having a central opening. The two or more lift pins are self supportive. Each of the two or more lift pins comprises one or more contact pads, and the contact pads of the lift pins extend into to the central opening of the cover plate to receive and support a substrate at an edge region of the substrate.

Abstract: A plasma processing apparatus includes a plasma generation chamber in which plasma active species are generated, a process chamber configured to accommodate processing target objects stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber, a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas being introduced from one end of the plasma source gas supply pipe and discharged through gas discharge holes formed in the plasma source gas supply pipe in the vertical direction, and a pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber. A size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction.

Abstract: A substrate processing apparatus includes: a processing vessel configured to be vacuumed; a holding unit configured to hold a plurality of substrates and to be inserted into or separated from the processing vessel; a gas supply unit configured to supply gas into the processing vessel; a plasma generation box partitioned and formed by a plasma partition wall; an inductively coupled electrode located at an outer sidewall of the plasma generation box along its length direction; a high frequency power supply connected to the inductively coupled electrode through a feed line; and a ground electrode located outside the plasma generation box and between the processing vessel and the inductively coupled electrode and arranged in the vicinity of the outer sidewall of the plasma generation box or at least partially in contact with the outer sidewall.

Abstract: Provided is a substrate processing apparatus.

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

Abstract: A microwave antenna includes a first spiral conduit having a first conduit end, first plural ports in a floor of the first spiral conduit spaced apart along the length of the first spiral conduit; an axial conduit coupled to a rotatable stage; and a distributor waveguide comprising an input coupled to the axial conduit and a first output coupled to the first conduit end.

Abstract: Disclosed is a deposition apparatus. The deposition apparatus includes a susceptor into which reactive gas is introduced, and a wafer holder provided in the susceptor to receive a substrate or a wafer. The wafer holder comprises a gas feeding part provided at a lateral side of the wafer holder.

Abstract: An apparatus and method for initiating a process gas plasma. A conductive plate having a plurality of conductive fingers is positioned in a microwave applicator. An arc forms between the conductive fingers to initiate the formation of a plasma. A transport mechanism may convey process materials through the plasma. A spray port may be provided to expel processed materials.

Abstract: A device for plasma depositing a thin film of a barrier material on an internal wall of a container includes: an electromagnetic wave generator; a cavity connected to the generator and made of a conductive material; a chamber positioned in the cavity and made of a material that is transparent to electromagnetic waves coming from the generator; and openings made in the cavity and oriented parallel to one another.

Abstract: According to a first aspect, the present invention relates to a device for depositing a high temperature superconductor onto a substrate in vacuum comprising a refilling device for containing a stock of high temperature superconductor material, an evaporation device, that evaporates the high temperature superconductor material within an evaporation zone by means of an energy transferring medium, and a conveyor that transports the high temperature superconductor material continuously from the refilling device to the evaporation zone in such a way that the high temperature superconductor material delivered into the evaporation zone is evaporated essentially without residues.

Abstract: An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source has a segmented configuration with high and low radiation segments and produces a generally ring-shaped array of energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. An antenna for the source is provided having concentrated conductor segments through which current flows in one or more high efficiency portions that produce high magnetic fields that couple through the high-transparency shield segments into the chamber, while alternating low efficiency conductor segments permit magnetic fields to pass through or between the conductors and deliver only weak fields, which are aligned with opaque shield sections and couple insignificant energy to the plasma.