Abstract: The present invention is a single wafer reactor having a vented lower liner for heating exhaust gas. The apparatus of the present invention includes a reaction chamber. A wafer support member which divides the chamber into an upper and lower portion is positioned within the chamber. A gas outlet for exhausting gas from the chamber has a vent to exhaust gas from the lower portion of the chamber and an exhaust passage opening to exhaust gas from the upper portion of the chamber. Heated inert purge gas is fed from the lower chamber portion through the vent at a rate so as to prevent the deposition gas from condensing in the exhaust passage.

Abstract: A microwave plasma CVD apparatus comprising a hermetically sealed vacuum vessel, an evacuating means for evacuating the vacuum vessel, and microwave introducing means for introducing a microwave through a microwave transmission circuit into the vacuum vessel to produce a plasma within the vacuum vessel. The microwave transmission circuit includes a cavity resonator integrally provided with two matching circuits. The microwave plasma CVD apparatus solves all the problems in the conventional microwave plasma CVD apparatus, operates at a high rate of operation, improves working efficiency, reduces the manufacturing cost of a-Si devices, and reduces variance in performance between devices employing films deposited by the microwave plasma CVD apparatus. Since the microwave plasma CVD apparatus does not employ any large electromagnet, a film can be formed on a surface having a large area simply by selectively deciding a microwave propagation mode.

Abstract: In a chemical vapor deposition system, susceptors are supported by a pair of turntables which are disposed in a vertical and parallel arrangement. A plurality of wafers to be processed are arranged circumferentially on opposing surfaces of the susceptors, and heater units are arranged behind the turntables. Because the wall surfaces exposed to the material gas are mostly covered by the wafers to be processed, any wasteful deposition of material on the chamber surfaces can be avoided. Thus, the need to clean the surface of the chamber wall is minimized. Such material deposition is not only wasteful but also could become a source of contamination as such deposition tends to peel off.

Abstract: A semiconductor processing workpiece support which includes a detection subsystem that detects whether a wafer or other workpiece is present. The preferred arrangement uses an optical beam emitter and an optical beam detector mounted along the back side of a rotor which acts as a workpiece holder. The emitted beam passes through the workpiece holder and is reflected by any workpiece present in the Workpiece holder. The preferred units include both an optical emitter and pair of detectors. The detection is preferably able to discriminate on the basis of the angle of the reflected beam, so that a portion of the beam reflected by the workpiece holder is not considered or minimized.

Abstract: An apparatus and method for improving the performance of a vacuum coating system includes a vacuum chamber enclosing a track. The track is substantially rectangular having a top surface and a bottom surface. A pair of legs are attached to the bottom surface of the track and support the track within the vacuum chamber. The legs have a top edge engaging the bottom surface of the track and a bottom edge secured to a bottom section of the vacuum chamber. The legs extend longitudinally along the bottom surface of the track. A rail is mounted on the top surface of the track and extends along a longitudinal axis of the track. A substantially planar platter having a top face and a bottom face is supported on top of the rail. The platter is adapted to slide from side to side along the rail across the length of the track. A stage carrying an electron beam evaporator is mounted on the top face of the platter. As such, the electron beam evaporator slides with the platter across the length of the track.

Abstract: To suppress the formation of dust particles, prevent the implantation of ions into a substrate and to achieve a good plasma distribution in the vicinity of the substrate when depositing a silicon oxide film using TEOS, for example, by means of CVD on a substrate which has a large surface area, an apparatus in which plasma is generated in the reactor 12 and active species (radicals) are formed and film deposition is carried out on the substrate 11 with this active species and precursor gas in which a partitioning plate 15 in which a plurality of holes 22 has been formed is established.

Abstract: A plasma treatment system (10) is provided having an automated, in-line processing ability. The preferred embodiment is directed toward plasma treatment of PC boards (28) but is generally applicable to any substrate susceptible of plasma reaction. The plasma treatment system (10) has the primary components of a reaction chamber (14) and chamber base (16), a chamber lifting assembly (18), a conveyor input assembly (12), a push mechanism (20) and associated linear drive assembly (22), an output assembly (24), an electronic control system (26), and a vacuum and plasma generating system (27). Each of the conveyor input assembly (22), reaction chamber (14), and output assembly (24) include pairs of guide rails (34, 52, and 106, respectively) which are capable of being juxtaposably aligned relative to one another and upon which the PC boards (28) may guideably and sideably travel. The push mechanism 20 effectuates both movement and positioning of the PC boards (28) along the guide rails (34, 52, and 106).

Abstract: A vaporizing apparatus for providing a vaporized liquid precursor to a process chamber in a vapor deposition process includes a microdroplet forming device for generating microdroplets from a liquid precursor and a heated housing defining a vaporization zone having a vapor flow path from the microdroplet forming device to the process chamber. The vaporization zone receives the microdroplets and a heated carrier gas. The heated carrier gas has a temperature so as to provide the primary source of heat for vaporizing the microdroplets. A method of vaporizing liquids for vapor deposition processes includes generating microdroplets and utilizing a heated carrier gas as the primary source of heat for vaporizing the microdroplets. A vapor deposition system carrying out the method includes a heated carrier gas and a heated housing defining a heated vaporization zone. The heated housing receives the heated carrier gas.

Abstract: A liquid delivery system (10) for vaporization of a liquid pecursor to form precursor vapor for transport to a deposition zone (36).

Abstract: The present invention is an improved semiconductor substrate processing apparatus which includes a processing chamber having a first member, a second member and a processing region; a vacuum tight seal between said first and said second members that enables a pressure controlled environment within said processing region; and a barrier between said first and second members which separates said seal from said processing region, said barrier being substantially non-reactive with processes conducted in said processing region.

Abstract: Method for the treatment of semiconductor substrates as well as an oven-boat system for this purpose. The oven is embodied as a vertical oven and it is aimed to simultaneously treat a number of substrates arranged one above the other in a boat. To carry out the deposition and such processes at raised temperatures an uniformly as possible, that is, so that each semiconductor substrate substantially undergoes the same treatment, it is proposed on the one hand to vary the ratio of the volume limited by two consecutive armrests and on the other hand the volume limited by screening off the process area and the edge of the substrates from the insertion end of the gas to the discharge end of the gas that flows through the oven.

Abstract: Apparatuses, systems, and methods are disclosed for providing optical communications. Bragg grating used in the optical components and systems of the present invention are produced by selectively hydrogenating one or more selected sections of an optical waveguide in general, and particularly optical fiber. Selective hydrogenation can be performed by selectively establishing local conditions in a first environment conducive to introducing greater quantities of hydrogen into selected sections than into non-selected sections, which are maintained in a second environment. The extent of selective hydrogenation and the hydrogen concentration difference between selected and non-selected section of the waveguide is a function of the temperature, pressure, and time of exposure established in the first and second environments.

Abstract: An object is to make it possible to prevent electron temperature distribution from becoming uneven at surface of a process object when dimensions of the process object are large. A region division unit 30 encloses the inside of a ring-shaped discharge electrode 15 in the vicinity of that discharge electrode 15, thereby dividing the interior region of a tube-shaped vacuum vessel 11 in a direction perpendicular to the center axis Z thereof into a plasma generation region R1 and a plasma diffusion region R2, This region division unit 30 has a tube-shaped grid 301. This grid 301 has a plurality of electron passing holes and exhibits electrical conductivity. This grid 301, furthermore, is set in place concentrically with the vacuum vessel 11 so as to be positioned on the outside of a substrate W.

Abstract: A wafer lift assembly including an RF shunt is provided. An insulating rim is connected to a powered lift cylinder via a conductive screw. The head of the screw is recessed below a top surface of the rim. A cover is arranged over top of the rim and screw. The RF shunt is a layer of conductive material arranged between the rim and the cover.

Abstract: An apparatus for forming a thin film of ultra-fine particles on a base body having a fine hole or a groove with a large aspect ratio (larger than one). The ultra-fine particles are smaller than 0.1 &mgr;m in diameter and are made from evaporated material. An aerosol is formed by dispersing and floating the ultra-fine particles in a gas at a pressure higher than 102 Pa in an aerosol-forming chamber. The base body is held by a holding mechanism within a thin-film forming container. A vacuum system is connected to the thin-film forming container. The aerosol-forming chamber is placed in communication with the thin-film forming container so that the aerosol is applied onto the inner wall surface of the fine hole or the groove. As a result, the ultra-fine particles are diffused and adsorbed onto the inner wall surface.

Abstract: A dual plate gas assisted heater module having a vertically movable poppet movable between an upper and a lower subchamber has a passive heating feature which preheats a substrate prior to introducing it into a subchamber for active heating.

Abstract: An apparatus and methods for an upgraded CVD system that provides a plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides an easily removable, conveniently handled, and relatively inexpensive microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. In a preferred embodiment, the remote microwave plasma source efficiently provides a plasma without need for liquid-cooling the plasma applicator tube. In another embodiment, the present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a plasma with the ability to efficiently clean the chamber when needed.

Abstract: A substrate treating apparatus for subjecting a substrate to a treatment including a heating or cooling treatment has a plate for heating or cooling the substrate. The plate has a plurality of holes formed therein and is arranged to be positioned under the substrate. A plurality of lifter pins for moving the substrate up and down are inserted in the holes, respectively, formed in the plate, and are incorporated with the plate to be movable up and down. A plurality of springs are arranged to bias the lifter pins downward, respectively. A push-up mechanism is used for pushing up the lifter pins while being in contact with bottom ends of the lifter pins. The push-up mechanism is arranged to be separable from the lifter pins. A driving mechanism is arranged to drive the push-up mechanism.

Abstract: A fabrication equipment to form an opening plug is provided. The equipment at least includes a load/unload chamber, a degas chamber, an usual sputtering chamber, a radio frequency (RF) sputtering chamber, a physical vapor deposition (PVD) chamber, and a chemical vapor deposition (CVD). The load/unload chamber is used to load a substrate. The degas chamber is used to remove moisture on the substrate. The usual sputtering chamber is used to form an opening on the substrate. The PVD chamber is used to form a first glue layer. The RF sputtering chamber is used to remove an overhang structure on the first glue layer. The CVD chamber is used to form a second glue layer over the first glue layer.

Abstract: Apparatus for producing a wet oxygen stream for a semiconductor furnace to form oxide layers on silicon wafers. A quartz vessel with quartz chips is heated to 450° C. and a mixture of water and oxygen is introduced at the bottom of the vessel. Vaporization occurs at the input of the water and oxygen into the vessel. The output of wet oxygen as superheated stream passes through the chips and is taken from the top of the vessel to the furnace. The quartz vessel is nested in an aluminum body containing heaters to maintain constant temperature. The ratio of water vapor to oxygen in the wet stream is constant to produce layers of predictable characteristics.