Abstract: A system for depositing a layer of metal onto a substrate through a chemical vapor deposition process comprises a process chamber for receiving and processing a substrate. A vaporizer element is positioned in a vaporization space of the chamber adjacent the process space, and is operable for being heated to a temperature sufficient to vaporize a liquid metal-containing precursor, such as a copper precursor, into a process gas for delivery to said process space. A nozzle is positioned opposite the vaporizer element and is connectable to a liquid metal-containing precursor supply to atomize and direct the liquid metal-containing precursor into the vaporization space and against the vaporizer element. A gas-dispersing element is positioned between the vaporization space and the process space to disperse the gas into the process space and proximate the substrate.

Abstract: Disclosed is an improved parylene deposition chamber wherein reactive monomer vapors enter the chamber tangentially so as to create a rotational flow of vapor within the interior of the chamber. A substrate support fixture is positioned within the chamber and rotated in a direction counter to the rotational flow of vapor. An annular space exists between the outer edge of the fixture and the inner wall of the chamber so as to allow the rotating vapor to descend freely within the chamber. Waste of parylene chemicals is minimized by eliminating the need for the positioning of baffles within the chamber.

Abstract: In an annealing apparatus for processing semiconductor wafers one by one, a hermetic process chamber has a work table having an upper surface on which a wafer is placed. A shower head is disposed to supply a process gas into the process chamber from a position opposing the upper surface of the work table. An exhaust chamber is connected to the bottom portion of the process chamber through an inlet opening below the work table. The inlet opening has a planar contour smaller than that of the work table. The planar contours of the work table and the opening are arranged almost concentrically with each other. An exhaust mechanism is connected to the exhaust chamber, so the process chamber is exhausted through the exhaust chamber.

Abstract: A vaporizing apparatus and method for providing a vaporized liquid precursor to a process chamber in a vapor deposition process includes a microdroplet forming device for generating microdroplets from a liquid precursor and a heated housing defining a vaporization zone having a vapor flow path from the microdroplet forming device to the process chamber. The vaporization zone receives the microdroplets and a heated carrier gas. The heated carrier gas has a temperature so as to provide the primary source of heat for vaporizing the microdroplets. The vaporized liquid precursor is then directed to the process chamber from the heated vaporization zone.

Abstract: A wafer level interconnecting mechanism for assembling and packaging multiple MEMS devices (modules), using microfabricated, interlocking, mechanical joints to interconnect different modules and to create miniature devices. Various devices can be fabricated using these joints, including fiber-optic switches, xyz translational stages, push-n-lock locking mechanisms, slide-n-lock locking mechanisms, t-locking joints, fluidic interconnects, on/off valves, optical fiber couplers with xy adjustments, specimen holders, and membrane stops.

Abstract: A process system comprises cassette housing chambers 33A and 33B, each of which houses therein a cassette C having housed an object W to be processed, and process chambers 26A through 26D for carrying out a predetermined process for the object W. The cassette housing chambers 30A and 30B are connected to the process chambers 26A through 26D via a transfer chamber 28. In the transfer chamber 28, there are provided a first transfer unit 32 for delivering the object W between the cassette housing chambers 30A and 30B and the transfer chambers 26A through 26D, and a second transfer unit 34 for delivering the object W between the process chambers 20A through 26D and the transfer chamber 28. In the overlapping range 36 of transfer ranges of the first and second transfer units 32 and 34, an aligning unit 38 for aligning the object W is arranged.

Abstract: An independent, self contained apparatus for operation within a vacuum chamber. A sealed enclosure is located in the chamber. The enclosure contains its own atmosphere independent of the vacuum in the chamber. A motor, power unit, and controls are located entirely within the enclosure. They do not have a direct structural connection outside of the enclosure in any way that would effect the atmosphere within the enclosure. The motor, power unit, and controls drive a spinner plate located outside the enclosure but within the vacuum chamber.

Abstract: This invention relates to an improved apparatus for treating the surface of particles by plasma-activated gas species to modify the particle surfaces.

Abstract: An apparatus to determine the pressure within the furnace during thermal gradient forced flow processes as well as other CVI/CVD processes is disclosed. Further, a method to measure the pressure is also described.

Abstract: An apparatus is provided for treating a wafer under fabrication with an erosive plasma, in a contamination controlled environment. The apparatus includes a chamber for containing the wafer to be treated by the plasma, and for isolating the wafer from contaminants external to the chamber during treatment. The chamber also includes one or more plasma erosion resistive screws. Each screw has a shaft secured within the chamber so that the shaft is unexposed to the plasma, and a raised head which is integral with, and made of the same material as, the shaft. The head has a continuous, surface shape with a reduced number of edges so as to reduce the accumulation of charge thereon, thereby resisting erosion by the plasma.

Abstract: A mobile cellular tumble coater and method is provided to coat articles with materials suitable for coating by vapor deposition under vacuum conditions. The mobile cellular tumble coater comprises multiple mobile part cells disposed on a hollow cylindrical chamber of an inner support base positioned within a coating chamber of a coating apparatus. Each mobile part cell comprises a hollow portion with an outer wall having multiple through holes large enough to permit vapors of coating material to flow into the mobile part cell and small enough to contain the articles therein. In an embodiment of invention, the mobile part cells are removably attached to the inner support base by rigid cables in such a manner that enables the mobile part cells to swing from the inner support base.

Abstract: Disclosed is a method and device for compensating a bias voltage on a wafer disposed over an electrostatic chuck in a processing chamber of a plasma processing system. The plasma processing system includes an electrostatic and RF power supplies that are coupled to the electrostatic chuck. The bias compensation device includes a voltage converter, a storage unit, and a voltage adjusting circuitry. The voltage converter is coupled to the electrostatic chuck for detecting a voltage Vpp of the electrostatic chuck. The voltage converter converts the detected voltage to a lower voltage Vref. The storage unit stores a predetermined slope and a predetermined offset of a calibration curve, which is derived by fitting a plurality of wafer bias voltages as a function of electrostatic chuck voltages.

Abstract: A reaction assembly of a vapor-phase deposition system includes a reaction chamber leading to a gullet outlet, and a sheath leading to a sheath outlet. The gullet outlet and the sheath outlet at the distal end of the reaction assembly, the distal end including a compound nozzle. The reaction assembly generates a compound gas stream for projection from the compound nozzle towards a target substrate. The compound gas stream includes a reagent gas stream and a sheath gas stream, wherein the sheath gas stream at least partially envelopes the reagent gas stream. Methods for generating and delivering a compound gas stream, and for performing vapor-phase deposition, are also disclosed.

Abstract: The present invention provides an apparatus and method, for plasma assisted processing of a workpiece, which provides for separate control of species density within a processing plasma. The present invention has a processing chamber and at least one collateral chamber. The collateral chamber is capable of generating a collateral plasma and delivering it to the processing chamber. To control the densities of the particle species within the processing chamber the present invention may have: a filter interposed between the collateral chamber and the processing chamber, primary chamber source power, several collateral chambers providing separate inputs to the processing chamber, or combinations thereof. Collateral plasma may be: filtered, combined with primary chamber generated plasma, combined with another collateral plasma, or combinations thereof to separately control the densities of the species comprising the processing plasma.

Abstract: A protective shield and a semiconductor processing system including a protective shield is provided. The shield includes a frame assembly including a pair of spaced end walls and a pair of side walls extending between and mounted to the end walls, and a plurality of shield bodies carried by the frame assembly. Each of the shield bodies includes a base having a continuous unit frame, a perforated sheet carried by said continuous frame, a plenum between the base and the perforated sheet, and a gas delivery device for delivering an inert gas to the plenum at a flow rate such that the gas diffuses through the perforated sheet.

Abstract: A method and apparatus for reducing particle contamination on wafers is disclosed. The method includes providing a semiconductor furnace system having an ideal reaction chamber, an electrostatic generator, a conducting wire, and a conductive ring. Moreover, an insulating layer is coated over the entire wafer boat carrier, that is part of the reaction chamber. Charges with a first polarity are generated after a reaction process carried out inside the chamber and before the “vacuum breaking” stage. These charges spread evenly across the entire exposed surface of the wafer boat carrier and repulse particles carrying the same polarity away from the wafers that are in process.

Abstract: An evacuation system having a long service life, a compact configuration and high reliability is disclosed. The system enables the process gases to be reused, so that the overall costs of capital investment and operation are reduced. The system comprises a processing chamber, and a vacuum pump communicating with the processing chamber by way of an evacuation conduit for evacuating the processing chamber. The evacuation conduit are provided with not less than two trapping devices arranged in series and operating at different temperatures for capturing different components contained in an exhaust gas discharged from the processing chamber.

Abstract: A cold wall reactor having inner and outer walls defining an annular reactor cell. A susceptor is rotatably mounted in the cell, and received wafers to be treated by gases flowing axially through the cell. The outer wall of the reactor is normally cooled, but is heated by a suitable furnace to provide a hot wall reactor when cleaning of the cell is required.

Abstract: A method and apparatus for forming a low dielectric constant polymeric film on a substrate, by liquid delivery of a parylene precursor reagent, in the form of an organic solution or a neat liquid, subsequent flash vaporization of the neat liquid or organic solution, pyrolytic “cracking” of the precursor to form the reactive monomer and/or reactive radical species, and condensation and polymerization of the monomer and/or reactive radical species to form a low dielectric constant polymeric film on the substrate. The low dielectric constant polymeric film may comprise a parylene film, formed from a precursor such as [2.2]paracyclophane, an alkyl- and/or halo-substituted derivative thereof, or an analogous compound of a p-xylene derivative.

Abstract: A reactor for processing a substrate includes a first housing defining a processing chamber and supporting a light source and a second housing rotatably supported in the first housing and adapted to rotatably support the substrate in the processing chamber. A heater for heating the substrate is supported by the first housing and is enclosed in the second housing. The reactor further includes at least one gas injector for injecting at least one gas into the processing chamber onto a discrete area of the substrate and a photon density sensor extending into the first housing for measuring the temperature of the substrate. The photon density sensor is adapted to move between a first position wherein the photon density sensor is directed to the light source and a second position wherein the photon density sensor is positioned for directing toward the substrate. Preferably, the communication cables comprise optical communication cables, for example sapphire or quartz communication cables.