Abstract: A polishing apparatus capable of performing multi-stage polishing of a substrate, such as wafer, is disclosed. The polishing apparatus includes: a plurality of polishing tables each for supporting a polishing pad; a plurality of polishing heads each configured to press a substrate against the polishing pad; and a transporting device configured to transport the substrate to at least two of the plurality of polishing heads. The plurality of polishing heads have different structures.

Abstract: A method that includes at least a CMP step of subjecting both a Si surface (1a) and a C surface (1b) of an SiC substrate (1) to double-sided polishing using a CMP (Chemical Mechanical Polishing) method with a C surface/Si surface processing selectivity ratio of 3.0 or greater.

Abstract: To provide a means by which polishing rate can further be improved in a polishing composition to be used for an application of polishing an object to be polished containing a metal element or a semimetal element. Oxo acid containing a metal element or a semimetal element, and water are contained in a polishing composition to be used for an application of polishing an object to be polished containing a metal element or a semimetal element.

Abstract: A method for manufacturing a SiC substrate is provided. The method includes: a sacrificial film-forming process of forming a sacrificial film on a surface of a SiC substrate in a film thickness that is equal to or greater than a maximum height difference of the surface; a sacrificial film planarization process of planarizing a surface of the sacrificial film by mechanical processing; and a SiC substrate planarization process of performing dry etching under conditions in which etching selectivity between the SiC substrate and the sacrificial film is in a range of 0.5 to 2.0 so as to remove the sacrificial film and so as to planarize the surface of the SiC substrate.

Abstract: Epitaxial lift off systems and methods are presented. In one embodiment a tape is disposed on the opposite side of the epitaxial material than the substrate is used to hold the epitaxial material during the etching and removal steps of the ELO process. In various embodiments, the apparatus for removing the ELO film from the substrates without damaging the ELO film may include an etchant reservoir, substrate handling and tape handling mechanisms, including mechanisms to manipulate (e.g., cause tension, peel, widen the etch gap, etc.) the lift off component during the lift off process.

Abstract: Disclosed herein is a method of forming a structure, comprising forming a mandrel layer over a substrate, masking the mandrel layer with a first mask and performing a first etch on the mandrel layer, the first etch forming a first opening exposing a first portion of the substrate. The mandrel layer is masked with a second mask and a second etch is performed on the mandrel layer. The second etch forms a second opening exposing a second portion of the substrate, and also forms a protective layer on the first portion of the substrate and in the first opening.

Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

Abstract: A method of making a colored biocidal multi-layer structure includes providing a first layer of a first color and locating a biocidal second layer on or over the first layer. The biocidal second layer has a second color different from the first color.

Abstract: A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.

Abstract: A high-efficiency and high-quality acidic cupric chloride etchant for printed circuit board, which contains cupric chloride, a sub-etchant and an oxidant, where the sub-etchant includes (in percentage by weight) 1%-36.5% of Hcl; 0.01%-45% of one or more compounds selected from FeCl3, FeCl2, Fe, FeO and Fe2O3. The etchant is used in connection with an automatic detection and charging control during the etching process to ensure the concentration of copper ions, the concentration of dissociated hydrogen ions and the oxidation-reduction potential in the solution arriving at set numerical values.

Abstract: One illustrative method disclosed herein includes, among other things, forming an inverted, generally T-shaped mandrel feature having a base mandrel structure and a substantially vertically oriented fin mandrel structure, the base mandrel structure having a lateral width that is greater than a lateral width of the fin mandrel structure, forming a sidewall spacer adjacent the sidewalls of the base mandrel structure and the fin mandrel structure, performing at least one etching process to remove portions of the inverted, generally T-shaped mandrel feature not covered by a sidewall spacer, wherein, after the etching process is completed, the sidewall spacers and remaining portions of the mandrel feature, collectively, define a fin pattern, and performing at least one additional process operation to form a plurality of fins in the substrate that correspond to the fin pattern.

Abstract: A method includes passing a chemical solution through a metal-ion absorber, wherein metal ions in the metal-ion absorber are trapped by the metal-ion absorber. The chemical solution exiting out of the metal-ion absorber is then used to etch a metal-containing region, wherein the metal-containing region includes a metal that is of a same element type as the metal ions.

Abstract: A method including forming a line pattern in a substrate includes using a plurality of longitudinally spaced projecting features formed along respective guide lines as a template in forming a plurality of directed self-assembled (DSA) lines that individually comprise at least one of (a): the spaced projecting features and DSA material longitudinally there-between, and (b): are laterally between and laterally spaced from immediately adjacent of the guide lines. Substrate material elevationally inward of and laterally between the DSA lines may be processed using the DSA lines as a mask.

Abstract: A solution is characteristic in being an etching method that processes a surface of a target object by corroding the surface by a corrosive, and the etching method includes: a resist forming step of forming a resist on the surface using resist liquid by ink jet printing the resist liquid on the surface; a surface corroding step of corroding a portion of the surface where the resist is not formed by bringing the corrosive into contact with a surface side of the target object where the resist has been formed in the resist forming step; and a resist detaching step of detaching the resist from the surface after the surface corroding step, wherein the resist forming step is a step of forming the resist by the resist liquid containing monofunctional monomers or monofunctional oligomers, and polyfunctional monomers or polyfunctional oligomers.

Abstract: In a plasma processing apparatus of an exemplary embodiment, energy of microwaves is introduced from an antenna into the processing container through a dielectric window. The plasma processing apparatus includes a central introducing unit and a peripheral introducing unit. A central introduction port of the central introducing unit injects a gas just below the dielectric window. A plurality of peripheral introduction ports of the peripheral introducing unit injects a gas towards a periphery of the placement region. The central introducing unit is connected to with a plurality of first gas sources including a reactive gas source and a rare gas source through a plurality of first flow rate control units. The peripheral introducing unit is connected to with a plurality of second gas sources including a reactive gas source and a rare gas source through a plurality of second flow rate control units.

Abstract: In a plasma etching method for forming a hole in an etching target film, a process of generating a plasma of a processing gas containing at least CxFy gas and a rare gas having a mass smaller than a mass of Ar gas into the processing chamber in the processing chamber by switching on a high frequency power application unit under a first condition and a process of extinguishing the plasma of the processing gas in the processing chamber by switching off the high frequency power application unit under a second condition are alternately repeated. A negative DC voltage from a DC power supply is applied such that an absolute value of the negative DC voltage of the second condition becomes greater than an absolute value of the negative DC voltage of the first condition.

Abstract: A stable etching process is realized at an earlier stage by specifying the combination of wavelength and time interval, which exhibits a minimum prediction error of etching processing result within a short period. For this, the combination of wavelength and time interval is generated from wavelength band of plasma emission generated upon etching of the specimen, the prediction error upon prediction of etching process result is calculated with respect to each combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, the prediction error is further calculated by changing the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits the minimum value of calculated prediction error is selected as the wavelength and the time interval used for predicting the etching processing process.

Abstract: The invention relates to a method for improving the mechanical strength of a ceramic matrix composite material of the SiC/SiC type, this composite material being obtained by (a) forming a fiber preform from 3rd generation silicon carbide fibers and (b) forming a ceramic matrix around the fiber preform, this ceramic matrix comprising silicon carbide. The method comprises a chemical etching treatment of the surface of the fibers by bringing said fibers into contact with a solution comprising an oxidizer, this treatment being carried out before step (a) or between steps (a) and (b).

Abstract: In an example of a method for making a hollow carbon material, a carbon black particle is obtained. The carbon black particle has a concentric crystallite structure with an at least partially amorphous carbon core and a graphitic carbon shell surrounding the at least partially amorphous carbon core. The carbon black particle is exposed to any of a heat treatment, a chemical treatment, or an electrochemical treatment which removes the at least partially amorphous carbon core to form the hollow carbon material.

Abstract: A method of manufacturing a magnetoresistive-based device using a plurality of hard masks. The magnetoresistive-based device includes magnetic material layers formed between a first electrically conductive layer and a second electrically conductive layer, the magnetic materials layers including a tunnel barrier layer formed between a first magnetic materials layer and a second magnetic materials layer. In one embodiment, the method may include removing the first electrically conductive layer and the first magnetic materials layer unprotected by a first hard mask, to form a first electrode and a first magnetic materials, respectively, and removing the tunnel barrier layer and the second magnetic materials layer unprotected by a second hard mask to form a tunnel barrier and second magnetic materials, and the second electrically conductive layer unprotected by the second hard mask to form, and a second electrode.