Abstract: Provided is an organic light emitting device including a transparent electrode in which conducting filaments are formed and a method of manufacturing the same. In the organic light emitting device, a transparent electrode of an organic light emitting device is formed by using a resistance change material which has high transmittance with respect to light in a UV wavelength range and of which resistance state is to be changed from a high resistance state into a low resistance state due to conducting filaments, which current can flow through, formed in the material if a voltage exceeding a threshold voltage inherent in a material is applied to the material, so that it is possible to obtain the transparent electrode having high transmittance with respect to light in a UV wavelength range as well as light in a visible wavelength range generated by the organic light emitting device and having high conductivity.

Abstract: An image forming apparatus includes an apparatus body, a sheet container, an image forming part to form an image, a sheet feeding rotary body to feed the recording medium, a sheet separating rotary body to contact the sheet feeding rotary body and rotate with the sheet feeding rotary body with a sheet separation nip region formed therebetween, a rotation adjusting unit to adjust rotation of the sheet separating rotary body, a sheet containing unit to contain the recording media therein, a sheet separating body storing unit disposed at one end of the sheet containing unit to store the sheet separating body therein, and a load resistance applying mechanism to apply a rotational load resistance different from a contact force generated by contacting of the sheet separating rotary body with the sheet feeding rotary body, to the sheet feeding rotary body with no rotation driving force applied thereto.

Abstract: In an inertial sensor, an acceleration sensor element section includes a first movable section configured to respond to acceleration applied thereto and a diagnosis electrode configured to displace the first movable section with an electrostatic force according to voltage application from a control circuit section. An angular velocity sensor element section includes a second movable section configured to respond to an angular velocity applied thereto and a driving electrode configured to displace the second movable section with an electrostatic force according to voltage application from the control circuit section. A voltage signal input to the driving electrode and a voltage signal input to the diagnosis electrode are the same voltage signal. The voltage signal input to the diagnosis electrode is a signal for detecting a mechanical failure. Carrier signal for detecting displacement of the first movable section has frequency higher than frequency of signal applied to the diagnosis electrode.

Abstract: A method for determining blanket performance in a printing press is provided. The printing press includes a plate cylinder having a printing plate transferring an image to a blanket on a blanket cylinder for printing on a substrate. The method includes determining an acceptable range of nip force (Fp) between a plate cylinder and a blanket cylinder in a printing unit, calculating the nip force (Fp) between the plate cylinder and blanket cylinder and determining blanket performance based on the nip force with respect to the acceptable range of nip force. A printing press is also provided.

Abstract: A bump structure for electrically coupling semiconductor components is provided. The bump structure includes a first bump on a first semiconductor component and a second bump on a second semiconductor component. The first bump has a first non-flat portion (e.g., a convex projection) and the second bump has a second non-flat portion (e.g., a concave recess). The bump structure also includes a solder joint formed between the first and second non-flat portions to electrically couple the semiconductor components.

Abstract: A semiconductor device, a method for manufacturing the same, and an electronic device including the same are provided. The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first channel layer and a first ion gel. The second transistor includes a second channel layer and a second ion gel. The first channel layer and the second channel layer may include, for example, graphene. The first ion gel and the second ion gel include different ionic liquids. The first ion gel and the second ion gel include different cations and/or different anions. One of the first transistor and the second transistor is a p-type transistor, and the other one is an n-type transistor. The combination of the first transistor and the second transistor constitutes an inverter.

Abstract: A thin film transistor (TFT) array substrate is provided that includes a TFT on a substrate. The TFT can include an active layer, gate electrode, source electrode, drain electrode, first insulating layer between the active layer and the gate electrode, and second insulating layer between the gate electrode and the source and drain electrodes. A pixel electrode is disposed on the first and second insulating layers. A capacitor including a lower electrode is disposed on a same layer as the gate electrode and an upper electrode. A third insulating layer directly between the second insulating layer and the pixel electrode and between the lower electrode and the upper electrode. A fourth insulating layer covers the source electrode, the drain electrode, and the upper electrode, and exposes the pixel electrode and can further expose a pad electrode.

Abstract: A device for transient measurement of motion resistance between test substance and one or two test surfaces, comprising a tension/compression force transducer, a speed and/or torque controlled motor with position encoder, rails for mounting a movable sled, method for applying a normal force on the test specimen and computerized data acquisition. The tension/compression force transducer is capable of measuring the transient resistance to motion of the sample mounted to the movable sled in either horizontal direction or in reversible motion oscillatory pull/pull direction at variable frequency and amplitude. The force transducer is capable of precise measurement of the full motion record of the test material from the initiation of motion to the steady state movement.

Abstract: A thin film transistor 100 according to the invention includes a gate electrode 20, a channel 44, and a gate insulating layer 34 provided between the gate electrode 20 and the channel 44 and made of oxide (possibly containing inevitable impurities; this applies to oxide hereinafter) containing lanthanum and zirconium. The channel 44 is made of channel oxide including first oxide containing indium, zinc, and zirconium (Zr) having an atomic ratio of 0.015 or more and 0.075 or less relative to indium assumed to be 1 in atomic ratio, second oxide containing indium and zirconium (Zr) having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio, or third oxide containing indium and lanthanum having an atomic ratio of 0.055 or more and 0.16 or less relative to the indium (In) assumed to be 1 in atomic ratio.

Abstract: An metallographic system comprising a programmable controller, a robotic arm, a specimen clamping or holding device, a sectioning saw, a mounting station, a polishing station, a specimen preparation station, and an analyzer for examining the specimen.

Abstract: The invention provides a micro-electro-mechanical device which includes a substrate, an electrode, and a diaphragm. The electrode includes plural vent holes. The diaphragm is disposed above and in parallel to the electrode, to form a capacitive sensor with the electrode. The diaphragm includes plural ribs protruding upward and/or downward from the diaphragm; the ribs are respectively disposed in correspondence to the plural vent holes and do not overlap nor contact the electrode. A method for making the micro-electro-mechanical device is also provided according to the present invention.

Abstract: A power device integrated on a semiconductor substrate and having a plurality of conductive bridges within a trench gate structure. In an embodiment, a semiconductor substrate includes a trench having sidewalls and a bottom, the walls and bottom are covered with a first insulating coating layer which then also includes a conductive gate structure. An embodiment provides the formation of the conductive gate structure with covering at least the sidewalls with a second conductive coating layer of a first conductive material. This results in a conductive central region of a second conductive material having a different resistivity than the first conductive material forming a plurality of conductive bridges between said second conductive coating layer and said conductive central region.

Abstract: There is provided an image forming apparatus including a casing which includes one side wall extending in a vertical direction and has a first opening; and a discharge portion which receives a recording medium having a developer image formed thereon, and a cassette which accommodates recording media and is removably mounted to the casing. The casing further includes a tray which is disposed near the one side wall and receives a recording medium to be transported into the casing through the first opening. The tray is rotatable between a first position where the tray is bent so as to cover at least part of the one side wall and the discharge portion and a second position where the tray extends so as to be separated from the one side wall and receives a recording medium to be supplied into the casing through the first opening.

Abstract: An apparatus for metering fluid in a subterranean well includes an electric submersible pump having a motor, a seal section and a pump assembly and a metering assembly. The metering assembly includes an upper pipe section with an outer diameter, the upper pipe section having an upper pressure sensing means, and a lower pipe section with an outer diameter smaller than the outer diameter of the upper pipe section, the lower pipe section having a lower pressure sensing means. A power cable is in electronic communication with the electric submersible pump and with the metering assembly.

Abstract: A novel semiconductor transistor is presented. The semiconductor structure has a gate region forming a channel with repetitive patterns in the direction perpendicular to the current flow, so that the portion of its channel that is not strictly planar contributes to a significant reduction of the silicon area occupied by the device. It offers the advantage of lower on-resistance for the same silicon area while improving on its dynamic performances. The additional cost to shape the channel region of the device in periodic repetitive patterns is minimum, which makes the present invention easy to implement in any conventional CMOS process technology and very cost effective.

Abstract: Recessed access transistor devices used with semiconductor devices may include gate electrodes having materials with multiple work functions, materials that are electrically isolated from each other and supplied with two or more voltage supplies, or materials that create a diode junction within the gate electrode.

Abstract: A sensor and its fabrication method are provided, the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein: the TFT device is a top gate TFT; the photodiode sensing device includes: a bias electrode and a bias electrode pin connected with the bias electrode, both of which are disposed on the base substrate; a photodiode disposed on the bias electrode and a transparent electrode disposed on the photodiode and connected with the source electrode.

Abstract: An example system for receiving gas expelled from a core sample of a formation may include a tubular element. A core chamber may be disposed within the first tubular element. A gas and drilling fluid separator may be in fluid communication with the core chamber. The tubular element may be an inner barrel assembly of a core sample assembly that is disposed within a borehole. A core sample may be contained within the inner barrel assembly and may be retrieved at the surface. Gas may be expelled from the core sample as it is retrieved, and the gas and drilling fluid separator may separate the expelled gas from suspension with a drilling fluid for analysis.

Abstract: An image forming apparatus includes a discharge tray; a printing unit; a stacking controlling unit that determines a front side value related to toner amount on a front side of a sheet and a back side value related to toner amount on a back side, determines an absolute value of difference between the front side value and the back side value for each sheet, determines a correction value of each sheet based on the absolute value and correction value data, adds the correction value to a predetermined value for determining a corrected count value of each sheet, integrates the corrected count value, and detects full of the discharge tray when the integrated value reaches a predetermined upper limit value; and a storage unit for storing the correction value data in which the correction value is determined corresponding to the absolute value.

Abstract: Steps for manufacturing an organic electroluminescent display device that can form an electrode pattern with high precision include forming a first insulating layer on a substrate and forming a first patterning layer, and forming a second patterning layer. The steps for manufacturing the organic electroluminescent display device further include forming a trench portion and forming an electrode layer on the second patterning layer and in the trench portion. In the step of forming the trench portion, an end of the first patterning layer exposed within the trench portion is etched to an outside more than an end of the second patterning layer exposed within the trench portion in a plan view, and in the step of forming the electrode layer, the electrode layer formed within the trench portion is isolated from the electrode layer formed outside of the trench portion.