Abstract: A method and system for forming a planar cross-section view for an electron microscope. The method comprises directing an ion beam from an ion source toward a first surface of a sample to mill at least a portion of the sample; milling the first surface, using the ion beam, to expose a second surface in which the end of the second surface distal to the ion source is milled to a greater depth relative to a reference depth than the end of the first surface proximal to the ion source; directing an electron beam from an electron source to the second surface; and forming an image of the second surface by detecting the interaction of the electron beam with the second surface. Embodiments also include planarzing the first surface of the sample prior to forming a cross-section.

Abstract: A method of producing a multilayer magnetoelectronic device and a related device. The method includes depositing a multilayer structure including at least two ferromagnetic layers disposed one on top of the other and each having a magnetic anisotropy with a corresponding magnetic moment. A magnetization curve is specified for the magnetoelectronic device. The number of ferromagnetic layers and, for each of the ferromagnetic layers, the magnetic moment and the magnetic hardness for obtaining the specified magnetization curve are determined. For each of the ferromagnetic layers a magnetic material, a thickness, an azimuthal angle and an angle of incidence are determined for obtaining the determined magnetic moment and magnetic hardness of the respective ferromagnetic layer. The multilayer structure is deposited using the determined material, thickness, azimuthal angle and angle of incidence for each of the ferromagnetic layers.

Abstract: Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

Abstract: A sputtering target that includes at least two consolidated blocks, each block including an alloy including molybdenum in an amount greater than about 30 percent by weight and at least one additional alloying ingredient; and a joint between the at least two consolidated blocks, the joint being free of any microstructure due to an added bonding agent (e.g., powder, foil or otherwise), and being essentially free of any visible joint line the target that is greater than about 200 ?m width (e.g., less than about 50 ?m width). A process for making the target includes hot isostatically pressing, below a temperature of 1080° C., consolidated perform blocks that may be surface prepared (e.g., roughened to a predetermined roughness value) prior to pressing.

Abstract: Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support designed to support a substrate having a given width, including: an annular band configured to rest on a lower ledge of the substrate support; an inner lip extending upwardly from an inner edge of the annular band, wherein an inner surface of the inner lip and an inner surface of the annular band together form a central opening having a width that is less than the given width, and wherein a depth between an upper surface of the annular band and an upper surface of the inner lip is between about 24 mm and about 38 mm; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

Abstract: A system and method of ion milling performed in a plasma etch system including a plasma etch chamber, multiple process gas sources coupled to the plasma etch chamber, a radio frequency bias source and a controller. The plasma etch chamber including a substrate support. The substrate support being a non-pivoting and non-rotating substrate support. The substrate support capable of supporting a substrate to be processed on a top surface of the substrate support without use of a mechanical clamp device. The plasma etch chamber also including an upper electrode disposed opposite from the top surface of the substrate support. The radio frequency bias source is coupled to the substrate support. The controller is coupled to the plasma etch chamber, the multiple process gas sources and the radio frequency bias source. The controller including logic stored on computer readable media for performing an ion milling process in the plasma etch chamber.

Abstract: A gas intake device of magnetron sputtering vacuum chamber and a magnetron sputtering apparatus with the gas intake device, the gas intake device of magnetron sputtering vacuum chamber comprises a gas mixing box configured to receive and mix the gas, a gas intake box configured to introduce the gas into a vacuum chamber, and a connecting pipe configured to connect with the two boxes, the gas mixing box has one or more gas intake pipes. The gas intake device can increase the distribution uniformity after the gas enters inside the vacuum chamber, effectively decrease the impact force to the precision equipment(s) in the vacuum chamber, and extend the service life of the apparatus.

Abstract: The present disclosure is directed to a material layer deposition system. The material layer deposition system includes a wafer pedestal configured to support at least one wafer within a confinement shield structure and a target carrier structure positioned above the wafer pedestal at an opposite side of the confinement shield structure. The target carrier structure is configured to support a sputtering target. The material layer deposition system further includes a collimator disposed within the confinement shield structure between the wafer pedestal and the target carrier structure, an electrical power source coupled to the collimator to supply electrical power, and a control system configured to control the electrical power source coupled to the collimator.

Abstract: In accordance with the present invention, deposition of LiCoO2 layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO2 with a desired <101> or <003> orientation. Some embodiments of the deposition address the need for high rate deposition of LiCoO2 films, which can be utilized as the cathode layer in a solid state rechargeable Li battery. Embodiments of the process according to the present invention can eliminate the high temperature (>700° C.) anneal step that is conventionally needed to crystallize the LiCoO2 layer.

Abstract: This disclosure describes systems and methods for regulating the density and kinetic energy of ions in a sputtering deposition chamber. A pulsed DC waveform with a modulated RF signal is generated and applied to the sputtering chamber. Upon termination of a cycle of the pulsed DC waveform, a reverse voltage spike is generated. This reverse voltage spike reverses the polarity of the cathode and anode of the sputtering chamber for some period of time. A reverse voltage limiting circuit is provided so as to limit the reverse voltage spike to a selected reverse voltage threshold. A controller may be employed to control the timing and duration of the application of the DC waveform, the timing and duration of the RF waveform, and the engagement of the reverse limiting circuit.

Abstract: Provided is a target assembly which is manufactured by bonding a Li-containing oxide sputtering target and an Al-based or Cu-based backing plate through a bonding material. The Li-containing oxide target assembly does not undergo warping or cracking during the bonding. The Li-containing oxide target assembly according to the present invention is manufactured by bonding a Li-containing oxide sputtering target to a backing plate via a bonding material, and has bending strength of 20 MPa or larger.

Abstract: A sputtering apparatus includes a sputtering cathode and a target overlying the sputtering cathode. A shield overlies the target and forms an aperture configured to direct sputtering particles onto a substrate. The shield includes a lower shield portion overlying the target, a channel outlet overlying the lower shield portion, and an upper shield portion overlying the channel. In some embodiments the shield includes a first shield and a second shield. The first shield includes a front gas injection outlet. The second shield overlies the first shield and forms the aperture. In various embodiments, the second shield is operable to adjust plasma confinement between the first shield and the second shield.

Abstract: A fabrication method that includes cryogenically cooling a multi-layered structure, which includes a barrier layer, in a multi-purpose chamber having a single enclosure around at least one sputtering target and a substrate support. The method also includes depositing a ferromagnetic layer over the barrier layer of the cryogenically cooled multi-layered structure in the single enclosure when the multi-layered structure is supported on the substrate support.

Abstract: An improved method of controlling topographical variations when milling a cross-section of a structure, which can be used to reduce topographical variation on a cross-section of a write-head in order to improve the accuracy of metrology applications. Topographical variation is reduced by using a protective layer that comprises a material having mill rates at higher incidence angles that closely approximate the mill rates of the structure at those higher incidence angles. Topographical variation can be intentionally introduced by using a protective layer that comprises a material having mill rates at higher incidence angles that do not closely approximate the mill rates of the structure at those higher incidence angles.

Abstract: The invention relates to a method for coating work pieces in a vacuum treatment system having a first electrode embodied as a target, which is part of an arc vaporization source. Using the first electrode, an arc is operated with an arc current and vaporizes material. A bias voltage is applied to a bias electrode, which includes a second electrode that is embodied as a work piece holder, together with the work pieces. Metal ion bombardment is carried out either to pretreat the work pieces or in at least one transition from one layer to an adjacent layer of a multilayer system, so that neither a significant material removal nor a significant material buildup occurs, but instead, introduces metal ions into a substrate surface or into a layer of a multilayer system.

Abstract: A method of generating a highly ionized plasma in a plasma chamber. A neutral gas is provided to be ionized in the plasma chamber at pressure below 50 Pa. At least one high energy high power electrical pulse is supplied with power equal or larger than 100 kW and energy equal or larger than 10 J, to at least one magnetron cathode in connection with a target in the plasma chamber. A highly ionized plasma is produced directly from the neutral gas in a plasma volume such that the plasma volume cross section increases during a current rise period. Atoms are sputtered from the target with the highly ionized plasma. At least part of the sputtered atoms are ionized.

Abstract: A system for use in coating an interior surface of an object is provided. The system includes a vacuum chamber enclosure defining an interior configured to receive the object, and a cathode coupled to the vacuum chamber enclosure. The cathode is fabricated from a coating material and has an outer surface. The cathode is configured such that when a current is applied to the cathode, an arc is formed on the outer surface and the coating material is removed from the cathode to form a cloud of coating material. The system also includes a collimator configured to be positioned between the cathode and the object configured to focus the cloud into a beam of coating material and to direct the beam towards the object, and a magnet configured to alter a path of the beam such that the beam is directed towards the interior surface of the object.

Abstract: A system and method for treating a substrate in a reaction chamber. A transfer chamber is arranged between a first lock and a second lock, wherein the second lock is provided between the transfer chamber and the reaction chamber. A substrate is transferred into the transfer chamber through the first lock, and the first lock is closed. In a next step, the transfer chamber is flooded with the same gas as in the reaction chamber and the pressure and temperature of the gaseous atmosphere in the transfer chamber is controlled to be the same as in the reaction chamber. Then, the second lock is opened and the substrate is transferred from the transfer chamber into the reaction chamber to treat the substrate. A computer program product for carrying out the above method.

Abstract: A cylindrical sputtering target includes a plurality of cylindrical sintered compacts adjacent to each other while having a space therebetween. The plurality of cylindrical sintered compacts have a relative density of 99.7% or higher and 99.9% or lower. The plurality of cylindrical sintered compacts adjacent to each other have a difference therebetween in the relative density of 0.1% or smaller.

Abstract: A magnetic field forming apparatus includes a support member having a first side and a second side coupling a first end to a second end and an axis of rotation between the first end and the second end; a first body coupled to the first end of the support member and extending away from the first side of the support member, wherein the first body has a plurality of first magnets coupled to a bottom of the first body; a second body rotatably coupled to the second end of the support member and extending away from the second side of the support member, wherein the second body has a plurality of second magnets coupled to a bottom of the second body, wherein the plurality of the first magnets are disposed about 180 degrees from the plurality of second magnets with respect to the axis of rotation of the support member.