Patents Examined by Rodney McDonald
  • Patent number: 8663433
    Abstract: A coated article is provided with at least one infrared (IR) reflecting layer. In certain embodiments, the coating is provided with at least one layer of zirconium silicon oxynitride (e.g., ZrSiOxNy), for improving the coated article's ability to block of UV radiation. The oxygen content of the layer may be adjusted in order to tune the coating's visible transmission versus UV blockage.
    Type: Grant
    Filed: October 17, 2006
    Date of Patent: March 4, 2014
    Assignees: Guardian Industries Corp., Centre Luxembourg de Recherches pour le Verre et la Ceramique S.A. (C.R.V.C.)
    Inventors: Ratchaneekorn Chonlamaitri, Anton Dietrich, Bernd Disteldorf
  • Patent number: 8663438
    Abstract: The invention relates to a target arrangement comprising a tubular-shaped carrier element and a hollow-cylindrical target having at least one target material, said target comprising at least one one-piece tube segment which at least partially surrounds the carrier element. Said carrier element and the tube segment are partially interconnected in a material fit by at least two plastically deformable compensating means. The invention also relates to a method for producing said type of target arrangement and a tubular segment.
    Type: Grant
    Filed: February 14, 2007
    Date of Patent: March 4, 2014
    Assignee: GFE Fremat GmbH
    Inventors: Grit Hüttl, Folke Steinert, Joachim Wagner
  • Patent number: 8663432
    Abstract: A magnetron sputtering apparatus of the invention includes: a sputtering chamber in which a target can be opposed to an object to be subjected to film formation; a gas introduction port facing the sputtering chamber; a magnet provided outside the sputtering chamber and opposite to the target and being rotatable about a rotation center which is eccentric with respect to center of the magnet; a sensor configured to detect a circumferential position of the magnet in a plane of rotation of the magnet; and a controller configured to start voltage application to the target to cause electrical discharge in the sputtering chamber on the basis of the circumferential position of the rotating magnet and gas pressure distribution in the sputtering chamber.
    Type: Grant
    Filed: February 6, 2009
    Date of Patent: March 4, 2014
    Assignees: Shibaura Mechatronics Corporation, Sony DADC Corporation
    Inventors: Masaaki Iwasaki, Yoshifumi Oda, Takehiro Sato
  • Patent number: 8663430
    Abstract: In the present invention, in forming a LaB6 thin film by magnetron sputtering, the single-crystal properties in the wide domain direction in the obtained LaB6 thin film are improved. In one embodiment of the present invention, in a magnetron sputtering apparatus, parallel magnetic field strength on a surface of the substrate is set to 0.1 times or less parallel magnetic field strength on a surface of the target.
    Type: Grant
    Filed: May 19, 2009
    Date of Patent: March 4, 2014
    Assignee: Canon Anelva Corporation
    Inventor: Seishi Horiguchi
  • Patent number: 8658002
    Abstract: A sputtering method includes receiving etch time information for a first substrate detected in a dry etching process, calculating a deposition time for a second substrate from the etch time information for the first substrate, and executing sputtering for the second substrate based the calculated deposition time. The thickness of the thin film deposited on the substrate in the sputter device may be uniformly maintained by using etch end point information detected in an end point detection (EPD) device. A sputtering system comprises a sputter device for executing a sputtering process for depositing a thin film on a substrate by a sputtering method, an EPD device for generating EPD information including etch time information for the substrate for a calculation of a deposition time during which the thin film is deposited, and a controller for calculating a deposition time by using the EPD information, and for controlling the sputter device based on the calculated deposition time.
    Type: Grant
    Filed: October 25, 2010
    Date of Patent: February 25, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Eu-Gene Kang, Won-Hyouk Jang
  • Patent number: 8658005
    Abstract: An electrode for an electrical-discharge surface-treatment method is molded with a metallic powder or a metallic compound powder having an average grain diameter of 6 micrometers to 10 micrometers. A coat on a surface of a workpiece is formed with a material constituting the electrode or a substance that is generated by a reaction of the material due to a pulse-like electrical discharge. The coat is built up with a material containing metal as a main constituent under conditions of a width of a current pulse for the pulse-like electrical discharge in a range of 50 microseconds to 500 microseconds and a peak of the current pulse equal to or less than 30 amperes.
    Type: Grant
    Filed: April 4, 2008
    Date of Patent: February 25, 2014
    Assignees: Mitsubishi Denki Kabushiki Kaisha, Ishikawajima-Harima Heavy Industries Co., Ltd.
    Inventors: Akihiro Goto, Masao Akiyoshi, Katsuhiro Matsuo, Hiroyuki Ochiai, Mitsutoshi Watanabe, Takashi Furukawa
  • Patent number: 8658009
    Abstract: This Cu alloy sputtering target includes, in terms of atomic percent: Al: 1% to 10%; and Ca: 0.1% to 2%, with the balance being Cu and 1% or less of inevitable impurities. This thin film transistor includes: a gate electrode layer joined to the surface of a glass substrate through an adhesion layer; a gate insulating layer; a Si semiconductor layer; an n-type Si semiconductor layer; a barrier layer; a wire layer composed of a drain electrode layer and a source electrode layer, both of which are mutually divided; a passivation layer; and a transparent electrode layer, wherein the barrier layer is formed by sputtering under an oxidizing atmosphere using the Cu alloy sputtering target.
    Type: Grant
    Filed: October 22, 2009
    Date of Patent: February 25, 2014
    Assignees: Mitsubishi Materials Corporation, Ulvac, Inc.
    Inventors: Kazunari Maki, Kenichi Yaguchi, Yosuke Nakasato, Satoru Mori
  • Patent number: 8658010
    Abstract: An apparatus for the application of coatings in a vacuum comprising a plasma duct surrounded by a magnetic deflecting system communicating with a first plasma source and a coating chamber in which a substrate holder is arranged off of an optical axis of the plasma source, has at least one deflecting electrode mounted on one or more walls of the plasma duct. In one embodiment an isolated repelling or repelling electrode is positioned in the plasma duct downstream of the deflecting electrode where the tangential component of a deflecting magnetic field is strongest, connected to the positive pole of a current source which allows the isolated electrode current to be varied independently and increased above the level of the anode current. The deflecting electrode may serve as a getter pump to improve pumping efficiency and divert metal ions from the plasma flow.
    Type: Grant
    Filed: January 28, 2010
    Date of Patent: February 25, 2014
    Assignee: G & H Technologies, LLC
    Inventor: Vladimir Gorokhovsky
  • Patent number: 8652306
    Abstract: To provide a method for manufacturing a mask blank capable of manufacturing a high quality mask blank that suppresses generation of defects in a thin film for forming a mask pattern with high yields, a method for manufacturing a transfer mask that manufactures the thin film of the mask blank by patterning, and a sputtering target used for manufacturing the mask blank. By using the sputtering target containing silicon and having a hardness of 900 HV or more in Vickers' hardness, the thin film for forming the mask pattern on a substrate is formed by sputtering, and the high quality mask blank that suppresses generating of defects is manufactured, and further the transfer mask is manufactured by patterning the thin film.
    Type: Grant
    Filed: August 19, 2003
    Date of Patent: February 18, 2014
    Assignee: Hoya Corporation
    Inventor: Masaru Mitsui
  • Patent number: 8636876
    Abstract: In accordance with the present invention, deposition of LiCoO2 layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO2 with a desired <101> or <003> orientation. Some embodiments of the deposition address the need for high rate deposition of LiCoO2 films, which can be utilized as the cathode layer in a solid state rechargeable Li battery. Embodiments of the process according to the present invention can eliminate the high temperature (>700° C.) anneal step that is conventionally needed to crystallize the LiCoO2 layer.
    Type: Grant
    Filed: December 7, 2005
    Date of Patent: January 28, 2014
    Inventors: Hongmei Zhang, Richard E. Demaray
  • Patent number: 8623182
    Abstract: A continuous vacuum sputtering method includes the steps of providing a substrate; providing a continuous vacuum sputtering machine comprising a depositing chamber. The depositing chamber comprising at least one vacuum chamber, each vacuum chamber having a cathodic arc emitting source located therein; the substrate being loaded in the continuous vacuum sputtering machine; depositing a coating on the substrate by cathodic arc deposition using the cathodic arc emitting source.
    Type: Grant
    Filed: April 29, 2011
    Date of Patent: January 7, 2014
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventors: Hsin-Pei Chang, Wen-Rong Chen, Huann-Wu Chiang, Lone-Wen Tai, Cheng-Shi Chen
  • Patent number: 8585872
    Abstract: A sputtering apparatus for ensuring high target utilization efficiency is provided. The sputtering apparatus 1 of the present invention comprises a moving means 28a, 28b so that first and second magnet members 23a, 23b can be moved by the moving means 28a, 28b in planes parallel to the surfaces of first and second targets 21a, 21b. When the first and second magnet members 23a, 23b move, magnetic field lines as well as deeply eroded regions on the surfaces of the first and second targets 21a, 21b also move, whereby large areas on the surfaces of the first and second targets 21a, 21b are sputtered.
    Type: Grant
    Filed: January 28, 2008
    Date of Patent: November 19, 2013
    Assignee: ULVAC, Inc.
    Inventors: Satoru Takasawa, Sadayuki Ukishima, Noriaki Tani, Satoru Ishibashi
  • Patent number: 8585874
    Abstract: Disclosed is a method of preparing a positive active material for a lithium battery. The method comprises: depositing a positive active material on an electrode on a substrate (1); and putting metal chips on a metal oxides target and performing a sputtering process, thereby depositing mixed metal-oxides on the positive active material (2). In another aspect, the method comprises: preparing an electrode active material; preparing a precursor solution including the electrode active material; and printing the precursor solution on the substrate, and evaporating a solvent at a temperature of 80-120° C.
    Type: Grant
    Filed: November 25, 2009
    Date of Patent: November 19, 2013
    Assignee: Korea Institue of Science and Technology
    Inventors: Kyung Yoon Chung, Byung Won Cho, Seong-rae Lee, Hwa Young Lee, Ji-Ae Choi
  • Patent number: 8585877
    Abstract: For providing control of two-step or a multi-step deposition process, a method and a corresponding deposition system is provided comprising providing a deposition process having at least two sub-processes employing different sets of process parameters, wherein each set of process parameters comprises at least one process parameter. The method comprises controllably generating an actual value for at least one first process parameter by taking into account at least one previous value of the respective first process parameter, wherein each first process parameter is a process parameter of said at least two sets of process parameters.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: November 19, 2013
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Roland Jaeger, Frank Wagenbreth, Frank Koschinsky
  • Patent number: 8580094
    Abstract: Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc.
    Type: Grant
    Filed: June 20, 2011
    Date of Patent: November 12, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Rongjun Wang, Sally Lou, Muhammad Rasheed, Jianxin Lei, Xianmin Tang, Srinivas Gandikota, Ryan Hanson, Tza-Jing Gung, Keith A. Miller, Thanh X. Nguyen
  • Patent number: 8574410
    Abstract: A high power impulse magnetron sputtering apparatus and method using a vacuum chamber with a magnetron target and a substrate positioned in the vacuum chamber. A field coil being positioned between the magnetron target and substrate, and a pulsed power supply and/or a coil bias power supply connected to the field coil. The pulsed power supply connected to the field coil, and the pulsed power supply outputting power pulse widths of greater that 100 ?s.
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: November 5, 2013
    Assignee: The Regents of the University of California
    Inventor: Andre Anders
  • Patent number: 8574412
    Abstract: A magnetron sputtering device includes a main body and a magnet mounting system for receiving magnets. The magnet mounting system comprises a first annular member, a second annular member coaxially encasing the first member, a third annular member coaxially encasing the second member, a first driving device connected to the first annular member, a second driving device connected to the second annular member, and a third driving device connected to the third annular member. The first driving device, the second driving device, and the third driving device are respectively configured for driving the first annular member, the second annular member, and the third annular member to move along an axis of the first annular member.
    Type: Grant
    Filed: December 13, 2010
    Date of Patent: November 5, 2013
    Assignee: Hon Hai Precision Industry Co., Ltd.
    Inventor: Shao-Kai Pei
  • Patent number: 8562800
    Abstract: A plasma processing apparatus using a plasma generating apparatus by which droplets mixed in plasma can be efficiently removed and surface processing precision can be improved in film formation wherein high purity plasma is used. A droplet removing portion arranged in a plasma advancing path is composed of a straight plasma advancing tube (P0) connected to a plasma generating portion (A); a first plasma advancing tube (P1) connected to the straight plasma advancing tube (P0) in a bent manner; a second plasma advancing tube (P2) connected to a finishing end of the first plasma advancing tube (P1) by being inclinedly arranged at a predetermined inclination angle with respect to the tube axis of the first plasma advancing tube; and a third plasma advancing tube (P3), which is connected to the finishing end of the second plasma advancing tube (P2) in a bent manner and discharges plasma from a plasma outlet.
    Type: Grant
    Filed: March 25, 2009
    Date of Patent: October 22, 2013
    Assignee: Ferrotec Corporation
    Inventor: Yuichi Shiina
  • Patent number: 8562794
    Abstract: To provide a process for producing an EUV mask blank, capable of reducing foreign matter attributable to a sputtering target, and a process for producing a substrate with a functional film for such a mask blank.
    Type: Grant
    Filed: December 14, 2010
    Date of Patent: October 22, 2013
    Assignee: Asahi Glass Company, Limited
    Inventor: Junichi Kageyama
  • Patent number: 8551300
    Abstract: A coated article, and a corresponding method of making the same are provided. The coated article includes a coating supported by a substrate, the coating including a thin metal or metal nitride contact layer (e.g., NiCr, Ni, Cr, CrNx or NiCrNx) located directly between and contacting an infrared (IR) reflecting layer (e.g., Ag) and an oxide barrier layer (e.g., NiCrOx).
    Type: Grant
    Filed: October 21, 2005
    Date of Patent: October 8, 2013
    Assignee: Guardian Industries Corp.
    Inventor: Grzegorz Stachowiak