Abstract: A plasma deposition apparatus includes a cathode assembly including a cathode disk and a water-coolable cathode holder supporting the cathode disk, an anode assembly including a water-coolable anode holder, a substrate mounted on the anode holder to serve as an anode, and a substrate holder mounting and supporting the substrate, and a reactor for applying a potential difference between opposing surfaces of the cathode assembly and the anode assembly under a vacuum state to form plasma of a raw gas. The cathode disk comes into thermal contact with the cathode holder using at least one of a self weight and a vacuum absorption force so as to permit thermal expansion of the cathode disk.

Abstract: A sputtering target for a sputtering chamber comprises a backing plate with a sputtering plate mounted thereon. In one version, the backing plate comprises a circular plate having a front surface comprising an annular groove. The sputtering plate comprises a disk comprising a sputtering surface and a backside surface having a circular ridge that is shaped and sized to fit into the annular groove of the backing plate.

Abstract: There are provided a method for manufacturing a magnetic recording medium which is excellent in terms of both the recording and reproduction characteristics and the thermal fluctuation characteristics without reducing the density and hardness of the perpendicular magnetic layer; a magnetic recording medium; and a magnetic recording and reproducing apparatus with which an excellent recording density is achieved, wherein, in the method for manufacturing the magnetic recording medium, at least a portion of the perpendicular magnetic layer 4 is formed as a magnetic layer having a granular structure that contains Co as a major component and also contains an oxide of at least one nonmagnetic metal selected from the group consisting of Cr, Si, Ta, Al, Ti, W and Mg; a target for forming the perpendicular magnetic layer 4 by the sputtering process is prepared so as to include an oxide of Co and a compound of Co and at least one nonmagnetic metal selected from the group consisting of Cr, Si, Ta, Al, Ti, W and Mg, an

Abstract: Micro-fluid ejection devices, methods for making micro-fluid ejection heads, and micro-fluid ejection heads, including a micro-fluid ejection head. One such micro-fluid ejection head has relatively high resistance thin film heaters adjacent to a substrate. The thin film material comprises silicon, metal, and carbon (SiMC wherein M is a metal). Each thin film heater has a sheet resistance ranging from about 100 to about 600 ohms per square and a thickness ranging from about 100 to about 800 Angstroms.

Abstract: The plant is suitable to produce a semiconductor film (8) having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16 of the periodic classification of elements. The plant comprises an outer case (1) embedding a chamber (2) divided into one deposition zone (2a) and one evaporation zone (2b), which are separated by a screen (3) interrupted by at least one cylindrical transfer member provided with actuation means rotating about its axis (5). To the deposition zone (2a) a magnetron device (7) is associated, for the deposition by sputtering of at least one element for each of the groups 11 and 13 on the side surface (?) of the cylindrical member that is in the deposition zone (2a). To the evaporation zone (2b) a cell (10) for the evaporation of at least one element of the group 16 is associated, and such an evaporation zone (2b) houses a substrate (8a) on which the film (8) is produced.

Abstract: Provided is a sputtering apparatus which can form a multilayer film giving high productivity and with less spiral pattern by effective use of targets, and a method of forming multilayer film using the apparatus. An embodiment is a multilayer-film sputtering apparatus comprising: a rotatable cathode unit (30) having cathodes (7a and 7b) arranged on the same circumference with respect to the rotational center, and having a power-supply mechanism for supplying power to each cathode; a sensor (14) for detecting the position of cathode; and a rotation mechanism for rotating the cathode unit (30).

Abstract: A target is provided opposite to a wafer mounted on in a vacuum chamber, and a magnet array body is disposed above the target. In the magnet array body, ring-shaped magnet arrays are arranged to generate annular magnetic fields in the circumferential direction of the wafer, and a sputtering film formation is performed by switching between the magnetic fields.

Abstract: The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle.

Abstract: A thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system includes: a vacuum container; a target holder located inside the vacuum container; a target holder located inside the vacuum container; a substrate holder opposed to the target holder; a power source for applying a voltage between the target holder and the substrate holder; a magnetron-sputtering magnet provided behind the target holder, for generating a magnetic field having a component parallel to a target; and radio-frequency antennae for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target where the magnetic field generated by the magnetron-sputtering magnet has a strength equal to or higher than a predetermined level.

Abstract: A sputtering apparatus includes a substrate holder which holds a substrate to be rotatable in the plane direction of the processing surface of the substrate, a substrate-side magnet which is arranged around the substrate and forms a magnetic field on the processing surface of the substrate, a cathode which is arranged diagonally above the substrate and receives discharge power, a position detection unit which detects the rotational position of the substrate, and a controller which controls the discharge power in accordance with the rotational position detected by the position detection unit.

Abstract: A medical implant has a microscopically rough outer coating that serves to bond the implant to animal tissue. The coating is applied to the implant by physical vapor deposition. The coating preferable is applied via a generally oblique coating flux or a low energy coating flux. In some embodiments, the coating has pores. The pores can contain a drug, which can diffuse over a period of time. The coating may be partially nonporous to protect the implant from corrosion. The coating can have an outer porous layer that can bond with animal tissue easily.

Abstract: A sputtering apparatus includes a substrate holder, a magnetic field applying unit, and target mounting table. The substrate holder includes a first stage which can mount a substrate and can rotate about a first rotating shaft, a second stage which can rotate about a second rotating shaft shifted from the first rotating shaft, a spinning unit which rotates the first stage about the first rotating shaft, and a revolving unit which revolves the first stage about the second rotating shaft. The magnetic field applying unit applies a magnetic field in a specific direction to the substrate. The target mounting table can mount a target configured to deposit a film on the substrate. The spinning unit rotates the first stage in a direction opposite to that of the rotation of the revolving unit, and rotates the first stage so as to maintain the specific direction of the magnetic field.

Abstract: The invention is related to a process to apply a heater function to a plastic glass that was made of a polycarbonate. The process includes a sputtering process that allows producing high performance heater function on a plastic glass. Another aspect of the invention is the plastic glass mirrors produced by the inventive process.

Abstract: Disclosed are apparatus and method embodiments for achieving etch and/or deposition selectivity in vias and trenches of a semiconductor wafer. That is, deposition coverage in the bottom of each via of a semiconductor wafer differs from the coverage in the bottom of each trench of such wafer. The selectivity may be configured so as to result in punch through in each via without damaging the dielectric material at the bottom of each trench or the like. In this configuration, the coverage amount deposited in each trench is greater than the coverage amount deposited in each via.

Abstract: A high strength composite particle comprised of a series of incrementally applied resin microlayer coatings such that each of the microlayer partial coatings are interleaved with each other is described. Methods of making the composite particles, as well as methods of using such particles as a proppant in oil and gas well hydraulic fracturing are also described.

Abstract: The sputtering apparatus has: a vacuum chamber in which a substrate is disposed; a cathode unit which is disposed inside the vacuum chamber so as to lie opposite to the substrate. The cathode unit has mounted a bottomed cylindrical target material from a bottom side thereof into at least one recessed portion formed in one surface of a holder, and has assembled therein a magnetic field generator for generating a magnetic field in an inside space of the target material.

Abstract: A metallic nanoparticle coated microporous substrate, the process for preparing the same and uses thereof are described.

Abstract: A support device for a magnetron arrangement with a rotating target includes a housing with a drive shaft mounted to rotate in the housing. An end of the drive shaft accessible from outside of the housing connects to the rotating target and another end lies within the housing for introduction of a torque. An electric motor with a stator and a rotor is arranged within the housing to generate a torque.

Abstract: A layer system that can be annealed comprises a transparent substrate, preferably a glass substrate, and a first layer sequence which is applied directly to the substrate or to one or more bottom layers that are deposited onto the substrate. The layer sequence includes a substrate-proximal blocking layer, a selective layer and a substrate-distal blocking layer. Also provided is a method for producing a layer system that can be annealed and has a sufficient quality even under critical climatic conditions and/or undefined conditions of the substrate. During the heat treatment (annealing, bending), the color location of the layer system is maintained substantially stable and the color location can be widely varied at a low emissivity of the layer system. For this purpose, a first dielectric intermediate layer is interposed between the substrate-proximal blocking layer and the selective layer and is configured as a substoichiometric gradient layer.

Abstract: Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm2, using sputter pressures of less than about 40 mTorr and preferably less than about 10 mTorr, using sputter gasses with molecular weight greater than that of neon, using cooling apparatus having a coolant flow rate at least greater than 2.5 gallons per minute and a coolant temperature less than about 25° C., using a magnetron sputtering system having a magnetron placed a sufficient distance from a silver selenide sputter target so as to maintain a sputter target temperature of less than about 350° C. and preferably below about 250° C.