Abstract: A sulfonate compound having formula (1) is novel wherein R1 to R3 are H, F or C1-20 alkyl or fluoroalkyl, at least one of R1 to R3 contains F.

Abstract: There is provided a fluorine-containing copolymer having an aliphatic monocyclic structure in the polymer trunk chain which has a number average molecular weight of from 500 to 1,000,000 and is represented by the formula (Ma): -(M1)-(M2a)-(N)—??(Ma) in which the structural unit M1 is a structural unit derived from an ethylenic monomer having 2 or 3 carbon atoms and at least one fluorine atom, the structural unit M2a is at least one structural unit which introduces an aliphatic monocyclic structure in the polymer trunk chain and is represented by the formula (a): wherein R1 is at least one hydrocarbon group selected from the group consisting of a divalent hydrocarbon group having 1 to 8 carbon atoms and constituting a ring which may be further substituted with a hydrocarbon group or a fluorine-containing alkyl group and a divalent hydrocarbon group having ether bond which has the sum of carbon atoms and oxygen atoms of 2 to 8, constitutes a ring and may be further substituted with a hydrocarbon group o

Abstract: The present invention provides image-forming compositions and photosensitive lithographic plates which are excellent in sensitivity to infrared radiation, latitude of development, treatable area in m2, and printing durability. Specifically, the present invention provides an image-forming composition comprising (A) a polymeric compound obtainable by the addition reaction of a resinous polymer having one or more phenolic hydroxyl groups with a silane coupling agent of the following general formula (1) or (2), (B) an acid generator, (C) an infrared absorber, and (D) an alkali-soluble resin, and a photosensitive lithographic plate having this image-forming composition applied onto a substrate.

Abstract: A photopolymerizable composition comprising a polymer having a radical polymerizable group and a unit represented by the following formula (I): wherein Q1 represents a cyano group or COX2; X1 and X2 each independently represent —R— or a halogen atom, R represents a hetero atom; Ra and Rb each independently represent a hydrogen atom, a halogen atom, a cyano group or an organic residual group; X1 and X2 may be taken together to form a cyclic structure; Ra and Rb may be taken together to form a cyclic structure; and X1 and Ra or Rb may be taken together to form a cyclic structure.

Abstract: The photosensitive polymer includes a first monomer which is norbornene ester having C1 to C12 aliphatic alcohol as a substituent, and a second monomer which is maleic anhydride. A chemically amplified photoresist composition, containing the photosensitive polymer, has an improved etching resistance and adhesion to underlying layer materials, and exhibits wettability to developing solutions.

Abstract: Photoacid generator salts comprising photoactive cationic moieties and segmented, highly fluorinated-hydrocarbon anionic moieties are disclosed which provide high photoacid strength and can be tailored for solubility and polarity. The present invention further relates to photoacid generators as they are used in photoinitiated acid-catalyzed processes for uses such as photoresists for microlithography and photopolymerization.

Abstract: The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 5 and a second unit represented by a general formula of the following Chemical Formula 6: wherein R1, R2, R3, R7, R8 and R9 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5, R6 and R11 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; R12 is a fluorine atom, or a straight-chain fluoridated alkyl group or a branched or cyclic fluoridated alkyl group with a

Abstract: A monitoring method for photoresist regeneration, a process and a system for the same are provided. In the photoresist regeneration process of the invention, the solid content and viscosity of photoresist are adjusted by condensation under reduced pressure or dilution with photoresist thinner until the final solid content and viscosity reach the predetermined values thereof obtained through the quantification equation of the invention and then the waste photoresist is caused to pass through filters for removing pollution particles contained therein, such that the regenerated photoresist is acquired.

Abstract: Disclosed are an organic anti-reflective coating polymer having a structure represented by the following formula I which is introduced to the top portion of photoresist, its preparation method and an anti-reflective coating composition, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF or 157 nm VUV light source. More particularly, the present invention provides an organic anti-reflective coating polymer capable of protecting a photoresist from amine to improve the stability of a post exposure delay and to minimize pattern distortion caused by a swing phenomenon during a patterning process, its preparation method and an anti-reflective coating composition comprising the same. [formula I] wherein each of m and n is an integer ranging from 5 to 5,000.

Abstract: A method is described for reducing the space width of holes in a first resist pattern and simultaneously removing unwanted holes to change the pattern density in the resulting second pattern. This technique provides holes with a uniform space width as small as 100 nm or less that is independent of pattern density in the second pattern. A positive resist is patterned to form holes with a first pattern density and first space width. A water soluble negative resist is coated over the first resist and selectively exposed to form a second patterned layer consisting of water insoluble plugs in unwanted holes in the first pattern and a thin water insoluble layer on the first resist pattern in unexposed portions. The plugs may form dense and isolated hole arrays while the thin insoluble layer reduces space width to the same extent in remaining holes in the second pattern.

Abstract: Disclosed is a photosensitive resin composition for forming a laser engravable printing element, comprising: (a) 100 parts by weight of a resin which is a plastomer at 20° C., wherein the resin has a number average molecular weight (Mn) of from 1,000 to 100,000 and has a polymerizable unsaturated group in an amount such that the average number of the polymerizable unsaturated group per molecule is at least 0.7, (b) 5 to 200 parts by weight, relative to 100 parts by weight of resin (a), of an organic compound having an Mn of less than 1,000 and having at least one polymerizable unsaturated group per molecule, and (c) 1 to 100 parts by weight, relative to 100 parts by weight of resin (a), of an inorganic porous material. Also disclosed is a laser engravable printing element formed from the above-mentioned resin composition.

Abstract: A photosensitive composition comprising a compound that generates an acid upon irradiation of an actinic ray or radiation (Component A), a resin that is decomposed by the action of an acid to increase solubility in an alkali developing solution (Component B), a performance adjusting agent (Component C) and a solvent (Component D), wherein a, b, c and d, which represents contents of Component A, Component B, Component C and Component D in terms of part by weight respectively, satisfy formulae (1) and (2) shown below, provided that c may be 0 (a+b+c)/(a+b+c+d)=0.03 to 0.10??(1) [(Number of aromatic ring included in molecule of Component A+1)×a]/(a+b+c)=0.05 to 0.80.

Abstract: Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer represented by Formula 1 and a photoresist composition containing the same have excellent etching resistance, thermal resistance and adhesive property, and high affinity to an developing solution, thereby improving LER (line edge roughness). wherein X1, X2, X3, R1, R2, R3, R4, R5, m, n, o, a, b, c, d and e are as defined in the description.

Abstract: The present invention provides novel alicyclic-esterified norbornene carboxylates monomers, polymers and photoresist compositions that comprise the polymers as a resin binder component. Methods for synthesis of the monomers and polymers of the invention are also provided. The photoresist compositions of the invention can provide highly resolved relief images upon exposure to short wavelengths, including sub-300 and sub-200 nm wavelengths such as 193 nm and 157 nm.

Abstract: The present invention aims to provide a near-infrared absorption film having excellent near-infrared blocking properties and visible light transparency over a wide wavelength range, and attractive appearance. It further aims to provide a near-infrared absorption film having excellent near-infrared blocking properties, visible light transparency, good appearance and excellent durability such as anti-deterioration properties. The film may comprise a transparent substrate, and a near-infrared absorption layer containing a cyanine compound represented by the formula (1), and a diimonium compound. wherein, in the formula (1), A is a divalent bonding group comprising ethylene. R1 and R2 are monovalent groups comprising a carbon atom. X? is a monovalent anion. The film may also comprise a transparent substrate, and a near-infrared absorption layer containing a layer containing the cyanine compound represented by the formula (1) and a layer containing a diimonium compound.

Abstract: A photosensitive resin composition which, when exposed to light through a photomask and then developed, can form a pattern comprising a polyimide film having a thickness of 20 ?m or larger with high resolution; and a use of the composition, in particular, a method of forming a pattern comprising the polyimide film. The photosensitive resin composition comprises (a) a poly(amic acid), (b) a specific 1,4-dihydropyridine derivative, and (c) a specific imide acrylate compound.

Abstract: A resist composition comprising a blend of a cyclic polymer having alcoholic groups as soluble groups and a polymer having carboxyl or hexafluoroalcohol groups whose hydrogen atoms are replaced by acid labile groups as a base resin forms a resist film which is improved in transparency, alkali dissolution contrast and plasma etching resistance.

Abstract: The present invention relates to a novel photoresist composition that can be developed with an aqueous alkaline solution, and is capable of being imaged at exposure wavelengths in the deep ultraviolet. The invention also relates to a process for imaging the novel photoresist as well as novel photoacid generators. The novel photoresist comprises a) a polymer containing an acid labile group, and b) a novel mixture of photoactive compounds, where the mixture comprises a lower absorbing compound selected from structure 1 and 2, and a higher absorbing compound selected from structure 4 and 5, where, R1 and R2 R5, R6, R7, R8, and R9 are defined herein; m=1–5; X? is an anion, and Ar is selected from naphthyl, anthracyl, and structure 3, where R30, R31, R32, R33, and R34 are defined herein.

Abstract: Anti-reflective compositions and methods of using those compositions to form circuits are provided. The compositions comprise a polymer dissolved or dispersed in a solvent system. In one embodiment, the compositions comprise less than about 0.3% by weight of a strong acid. In another embodiment, the weight ratio of strong acid to weak acid in the composition is from about 0:100 to about 25:75. Examples of preferred weak acid compounds include phenolic compounds (e.g., Bisphenol S, Bisphenol A, ?-cyano-4-hydroxycinnamic acid), carboxylic acids (e.g., acetic acid), phosphoric acid, and cyano compounds. The polymer and other ingredients are preferably physically mixed in a solvent system. The resulting compositions are spin bowl compatible (i.e., they do not crosslink prior to the bake stages of the microlithographic processes or during storage at room temperature).

Abstract: Provided are a resist material having markedly high resolution and etching resistance of a practically usable level, and being useful for fine microfabrication; a patterning method using the resist material; and a polymer useful as a base resin for the resist material. More specifically, provided are a polymer having a weight-average molecular weight of 1,000 to 500,000, which comprises one or more repeating units selected from the group consisting of repeating units represented by formulae (1) to (3) below; and one or more repeating units of the formula (4) below; and a resist material containing the polymer.