Abstract: A photoresist composition for a resist flow process and a method for forming a contact hole using the same. When a photoresist composition comprising a crosslinking agent of following Formula 1 or Formula 2, is used for a photoresist pattern formation process, it improves resist flow properties, L/S pattern resolution and contrast ratio. wherein R1, R2, R3 and R4 individually represent H or substituted or unsubstituted linear or branched (C1-C10) alkyl. wherein R5, R6 and R7 individually represent H, substituted or unsubstituted linear or branched (C1-C10) alkyl or substituted or unsubstituted linear or branched (C1-C10) alkoxy.

Abstract: A positive resist composition comprising: (A) a resin which comprises a repeating unit represented by the following formula (I): wherein R1 represents a hydrogen atom or an alkyl group, A1 represents a single bond or a linking group, R2 represents an alkylene group, and X represents an alkoxy group or a hydroxyl group, and exhibits an increased rate of dissolution in an alkali developing solution by an action of an acid; and (B) a compound capable of generating an acid on exposure to active light rays or a radiation.

Abstract: A negative resist composition, comprising: (a) silicon-containing polymer with pendant fused moieties selected from the group consisting of fused aliphatic moieties, homocyclic fused aromatic moieties, and heterocyclic fused aromatic and sites for reaction with a crosslinking agent, (b) an acid-sensitive crosslinking agent, and (c) a radiation-sensitive acid generator is provided. The resist composition is used to form a patterned material layer in a substrate.

Abstract: A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III) as described in the specification or (B-2) a resin having at least one monovalent polyalicyclic group represented by formula (Ib) as described in the specification and a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution. The positive photosensitive composition containing the resin according to the present invention has high transmittance to far ultraviolet light particularly having a wavelength of 220 nm or less and exhibits good dry etching resistance.

Abstract: The present invention provides a sulfonium salt represented by the following formula (I): wherein Q1, Q2 and Q3 each independently represent hydrogen, hydroxy, alkyl having 1 to 6 carbon atoms, or alkoxy having 1 to 6 carbon atoms, but all of Q1, Q2 and Q3 are not the same; and Q4 and Q5 each independently represent perfluoroalkyl having 1 to 8 carbon atoms. The present invention also provides a chemical amplifying type positive resist composition having the sulfonium salt above and a resin which contains a structural unit having a group that is unstable to acid and which is insoluble or slightly soluble by itself in an aqueous alkali, but becomes soluble in the aqueous alkali by an action of acid. The present invention further provides a polymerization initiator composition having the sulfonium salt above and a sensitizer.

Abstract: The present invention provides a cross-linker monomer of formula 1, a photoresist polymer derived from a monomer comprising the same, and a photoresist composition comprising the photoresist polymer. The cross-linking unit of the photoresist polymer can be hydrolyzed (or degraded or broken) by an acid generated from a photoacid generator on the exposed region. It is believed that this acid degradation of the cross-linking unit increases the contrast ratio between the exposed region and the unexposed region. The photoresist composition of the present invention has improved pattern profile, enhanced adhesiveness, excellent resolution, sensitivity, durability and reproducibility. where A, B, R1, R2, R3, R4, R5, R6 and k are as defined herein.

Abstract: New photoacid generator systems that comprise a sensitizer compound and one or more photoacid generator compounds are provided and photoresist compositions that comprise such systems. Photoacid generator systems of the invention are particularly useful as photoactive components of photoresists imaged at short wavelengths such as 248 nm, 193 nm and 157 nm.

Abstract: A positive photosensitive composition comprising (A1) a compound that generates an alkanesulfonic acid in which the &agr;-position is substituted with a fluorine atom upon irradiation of an actinic ray or radiation, (A2) an onium salt of an alkanesulfonic acid in which the &agr;-position is not substituted with a fluorine atom, and (B) a resin that has a monocyclic or polycyclic alicyclic hydrocarbon structure and is decomposed by the action of an acid to increase a solubility rate in an alkali developing solution.

Abstract: A positive radiation-sensitive composition comprising: (a) a resin whose solubility in an alkali developer increases by the action of an acid; (b) a compound which generates a carboxylic acid having a molecular weight of 100 or less upon irradiation with an actinic ray or a radiant ray; (c) a surfactant; and (d) a solvent.

Abstract: Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, X1, X2, Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8, l and m are as defined in the specification of the invention.

Abstract: Radically photopolymerizable compositions comprising (a) at least one ethylenically unsaturated photopolymerizable compound; (b) as photoinitiator, at least one compound of formulae (I, II, III, IV, V and/or VI), wherein m is 0 or 1; n is 0, 1, 2 or 3; x is 1 or 2; R1 is inter alia phenyl, naphthyl, anthracyl or phenanthryl, a heteroaryl radical, C2-C12alkenyl, C4-C8cycloalkenyl, or C6-C12bicycloalkenyl; R′1 is inter alia C2-C12alkylene, or phenylene; R2 has one of the meanings of R1 or inter alia is phenyl; y is 1 or 2; R3 if x is 1 inter alia is C1-C18alkylsulfonyl, or phenyl-C1-C3alkylsulfonyl, R3 if x is 2, is for example C2-C12alkylenedisulfonyl; R4 and R5 inter alia are hydrogen, halogen, or C1-C8alkyl; R6, R7, R8 inter alia are hydrogen, R26Y—, or phenyl; R9 inter alia is C5-C8cycloalkyl, or phenyl; A is for example —S—, —O—, or —NR10—; Q is C1-C8-alkylene optionally interrupted by —O—; X is —O— or —NR9—; R10 inter alia

Abstract: A positive resist composition comprising: (A) a polymer having a silicon atom in a side chain thereof, which is insoluble or sparingly soluble in an aqueous alkali solution and becomes soluble in an aqueous alkali solution by an action of an acid; and (B) an acid generator capable of generating an acid on exposure to active light rays or a radiation, which is represented by the formula (I) defined in the present specification.

Abstract: A composition for an anti-reflective coating or a radiation absorbing coating which can form an anti-reflective coating or a radiation absorbing coating having high absorption to exposed radiation in the range of 100 to 450 nm, no diffusion of photo-generated acid to anti-reflective coating and so on, no intermixing of resist and anti-reflective coating layer, good shelf-life stability, and good step coverage and novel compounds and polymers being preferably used in the composition are disclosed. The composition contains an acrylic or methacrylic compound or polymer with an isocyanate or thioisocyanate group bonded through an alkylene group to a side chain thereof or with an amino or hydroxyl group-containing organic chromophore which absorbs radiation in the range of 100 to 450 nm wavelength and is bonded, for example, through an alkylene group to the isocyanate or thioisocyanate group. Resist patters with high resolution are formed on a substrate.

Abstract: The invention provides new photoresist compositions that contain a resin binder and a blend of photoacid generators. Photoacid generator blends of the invention produce photoacids that differ in acid strength and/or size.

Abstract: Provided are a fluorine-containing photosensitive polymer having a hydrate structure and a resist composition including the photosensitive polymer.

Abstract: The present invention provides photoresist materials for use in photolithography at wavelengths less than about 248 nm. More particularly, the photoresists of the invention are particularly suited for use in 157 nm lithography. A photoresist composition of the invention includes a polymer having at least one monomeric unit having an aromatic moiety. The monomeric unit further includes at least a group, such as an electron withdrawing group, attached to the aromatic moiety. The attached group includes at least one CF bond. The polymer further includes an acidic hydroxyl group. A photoresist composition of the invention can have an absorbance in a range of 1-5 &mgr;m−1 at 157 nm, rendering it particularly suitable for use as a single layer resist in 157 nm lithography.

Abstract: The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of image-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.

Abstract: The negative resist composition comprises (1) a film-forming polymer which is itself soluble in basic aqueous solutions, and contains a first monomer unit with an alkali-soluble group in the molecule and a second monomer unit with an alcohol structure on the side chain which is capable of reacting with the alkali-soluble group, and (2) a photo acid generator which, when decomposed by absorption of image-forming radiation, is capable of generating an acid that can induce reaction between the alcohol structure of the second monomer unit and the alkali-soluble group of the first monomer unit, or protect the alkali-soluble group of the first monomer unit. The resist composition can form intricate negative resist patterns with practical sensitivity and no swelling.

Abstract: A polymer blend is provided for use in a lithographic photoresist composition, particularly a chemical amplification photoresist. In a preferred embodiment, the polymer blend is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including wavelengths of 157 nm, 193 nm and 248 nm, and has improved sensitivity and resolution. Processes for preparing and using the polymer blend are also provided, as are lithographic photoresist compositions that contain the polymer blend.

Abstract: The present invention provides a positive photoresist composition for far ultraviolet exposure, which comprises a polymer having at least one of a repeating unit represented by formula (Ia) and a repeating unit represented by formula (Ib), and a repeating unit represented by formula (II), and having a group capable of decomposing by the action of an acid: wherein R1 and R2 each represents hydrogen atom, a cyano group, a hydroxyl group, —COOH, —COOR5, —CO—NH—R6, —CO—NH—SO2—R6, an alkyl group, an alkoxy group, a cyclic hydrocarbon group or a —Y group, X represents —O—, —S—, —NH—, —NHSO2— or —NHSO2NH—, A represents a single bond or a divalent linking group, Z2 represents —O— or —N(R3)—, R11 and R12 each represents a hydrogen atom, a cyano group, a halogen atom or an alkyl group, Z1 represents an atomic group necessary for forming an alicyclic structure