Abstract: The following resist composition which is excellent particularly in transparency to light beams and dry etching properties and gives a resist pattern excellent in sensitivity, resolution, evenness, heat resistance, etc., as a chemical amplification type resist, is presented. A resist composition which comprises a fluoropolymer (A) having repeating units represented by a structure formed by the cyclopolymerization of one molecule of a fluorinated diene and one molecule of a monoene, in which the monoene unit in each repeating unit has a blocked acid group capable of regenerating the acid group by the action of an acid, an acid-generating compound (B) which generates an acid upon irradiation with light, and an organic solvent (C).

Abstract: The present invention relates to a novel negative working deep uv photoresist that is developable in an aqueous alkaline solution, and comprises a fluorinated polymer, photoactive compound and a crosslinking agent. The photoresist composition is particularly useful for patterning with exposure wavelengths of 193 nm and 157 nm.

Abstract: The present invention relates to a cross-linker for use in a photoresist which is suitable for a photolithography process using KrF (248 ru), ArF (193 nm), E-beam, ion beam or EUV light source. According to the present invention, preferred cross-linkers comprise a copolymer having repeating units derived from: (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride.

Abstract: The present invention provides a photoresist monomer represented by the following formula 2; a photoresist copolymer represented by the following formula 100; and a photoresist composition containing the same. wherein, R1 and R2 are independently —COOH or —R—COOH; and R is a substituted or unsubstituted (C1-C10) alkyl. wherein, R1 and R2 are independently —COOH or —R—COOH ; R is a substituted or unsubstituted (C1-C10) alkyl; R3 is —COOR* or —R′COOR*; R* is an acid labile group; R′ is a substituted or unsubstituted (C1-C10) alkyl; R4 is H or R3; R5 is a substituted or unsubstituted (C1-C10) alkyl; and a:b:c is the polymerization ratio of the comonomer.

Abstract: A positive-tone or negative-tone radiation sensitive resin composition comprising (A) a photoacid generator represented by the following formula (1-1) or (1-2): wherein R1, R2, R5, and R6 are an alkyl group , R3 and R7 are a hydroxyl group or —OR4 (wherein R4 is an organic group), A1− and A2− indicate a monovalent anion, a and c denote an integer of 4-7, and b and d an integer of 0-7. The positive-tone resin composition further comprises (B1) an acid-cleavable group-containing resin or (B2) an alkali-soluble resin and an alkali solubility control agent, and the negative-tone radiation sensitive resin composition further comprises (C) an alkali-soluble resin and (D) a crosslinking agent. The resin compositions are highly sensitive and exhibit superior resolution and pattern forming performance.

Abstract: A lithographic structure and method of fabrication and use thereof having a plurality of layers at least one of which is a an RCHX layer which comprises a material having structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti and combinations thereof and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F and a layer of an energy active material. The RCHX layers are useful as hardmask layers, anti-reflection layers and hardmask anti-reflection layers. The RCHX layer can be vapor-deposited and patterned by patterning the energy active material and transferring the pattern to the RCHX layer.

Abstract: A tool and method for placing an identifying mark on a semiconductor wafer has a bundle of optical fibers that can be illuminated in a pattern representing an identifying character. Light from the fibers is focused on a photoresist layer during wafer manufacture and a pattern of dots is etched into the wafer to represent the character. The dots are too small to be seen with the human eye but the character can be read by a human or by a machine. The character is etched as part of a conventional etch step in manufacturing the wafer and it is easily repeated as a series of manufacturing steps obscure the original mark.

Abstract: A novel ester compound having an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl group as the protective group is provided as well as a polymer comprising units of the ester compound. The polymer is used as a base resin to formulate a resist composition having a higher sensitivity, resolution and etching resistance than conventional resist compositions.

Abstract: According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.

Abstract: An adhesive in the form of a patterned film is disclosed, which is obtained from a photositive resin composition and exhibits satisfactory adhesive properties even when used for electronic parts of various shapes having a rugged surface. The adhesive is obtained from a photosensitive polyimide resin precursor which, after pattern formation, melts upon heating. The adhesive has a melt viscosity at 250 ° C. from 1,000 to 1,000,000 Pa·s.

Abstract: A positive photoresist composition comprising (a) an acid-decomposable polysiloxane having a structural unit represented by formula (IV): wherein Z′ is a phenyl ring substituted with an acid-decomposable group and (b) a compound which decomposes upon exposure to generate an acid.

Abstract: A multifunctional photoinitiator is obtainable as the reaction product of a multifunctional core material containing two or more reactive groups and a photoinitiator or a derivative thereof. The photoinitiator or its derivative has a reactive group capable of reacting with the reactive groups of the multifunctional core.

Abstract: A positive photosensitive composition comprising (A) a compound which generates an acid upon irradiation with an actinic ray or radiation, and (B-1) a resin having a group which is decomposed by the action of an acid to increase solubility in an alkaline developing solution and containing at least one structure represented by formulae (I), (II) and (III)

Abstract: A resist pattern is formed on stacked first and second conductive films. After second conductive film is patterned, the patterning of first conductive film follows without removing the remaining resist pattern. Resist pattern is completely removed by etching before the patterning of first conductive film is completed. Thereafter, etching is continued using second conductive film as a mask, and the patterning of first conductive film is completed. Thus, a method of forming a pattern for the semiconductor device in which minute interconnection pattern having a stacked structure is formed without an increase in the number of processing steps can be provided.

Abstract: Biradical initiators and methods using the same are disclosed. Polymerization of compositions which include the compounds of the invention may be activated by irradiating the composition with radiation.

Abstract: A novel ester compound having an exo-form 2-alkylbicyclo[2.2.1]heptan-2-yl group as the protective group is provided as well as a polymer comprising units of the ester compound. The polymer is used as a base resin to formulate a resist composition having a higher sensitivity, resolution and etching resistance than conventional resist compositions.

Abstract: Disclosed is a novel positive-working chemical-amplification photoresist composition capable of giving an extremely finely patterned resist layer in the manufacturing process of semiconductor devices and a method for forming a finely patterned resist layer therewith. The photoresist composition comprises: (A) 100 parts by weight of a copolymeric resin consisting of from 50 to 85% by moles of (a) hydroxyl group-containing styrene units, from 15 to 35% by moles of (b) styrene units and from 2 to 20% by moles of (c) tert-butyl (meth)acrylate units; and (B) from 1 to 20 parts by weight of a radiation-sensitive acid-generating agent which is an onium salt containing a fluoroalkyl sulfonate ion having 1 to 10 carbon atoms as the anion such as diphenyliodonium trifluoromethane sulfonate.

Abstract: Compounds of the formula I in which R1 is C1-C4alkyl, R2 is hydrogen, C1-C4alkyl or C1-C4alkoxy and R3, R3, R4, R5, R6, and R7 independently of one another are hydrogen, halogen, C1-C20alkyl, cyclopentyl, cyclohexyl, C2-C12alkenyl, C2-C18 alkyl which is interrupted by one or more oxygen atoms, or are phenyl-substituted C1-C4alkyl, or are phenyl which is unsubstituted or is mono- or disubstituted by C1-C4alkyl and/or C1-C4alkoxy, with the provisos that at least one of the radicals R3, R4, R5, R6 and R7 is other than hydrogen and that, if R1 and R2 are methyl, R3 and R6 are not methyl, and mixtures of such compounds with &agr;-hydroxy ketones, benzophenones and &agr;-amino ketones, are suitable as photoinitiators.

Abstract: A method for manufacturing a photoresist pattern that defines an opening having a small size, and a method for manufacturing a semiconductor device using the same are provided. A photoresist pattern defining the opening can be formed using a photoresist composition that includes either polymer mixture I containing a polymer A in which an acid-labile di-alkyl malonate group is pendant to the polymer backbone, and a polymer B in which a group that thermally decomposes at a temperature lower than the glass transition temperature of the polymer B itself is pendant to the polymer backbone, or polymer mixture II containing the polymer B and a polymer C including a (meth)acrylate as a monomer, as a main component. The size of the opening then can be reduced by thermal flowing the photoresist pattern.

Abstract: A photosensitive resin composition which comprises (1) a particulate copolymer comprising 10-99.8% by mole of the unit of (i) an aliphatic conjugated diene monomer, 0.1-30% by mole of the unit of (ii) a monomer having one polymerizable unsaturated group and an amino group, 0.1-20% by mole of the unit of (iii) a monomer having at least two polymerizable unsaturated groups and 0-40% by mole of the unit of (iv) a copolymerizable other monomer having one polymerizable unsaturated group, (2) a photopolymerizable unsaturated monomer and (3) a photopolymerization initiator typically represented by 9-fluorenone or 2-i-propylthioxanthone. A photosensitive resin composition is provided which can be developed by using water, has a low hardness and high resilience, and is excellent in balance of properties.