Abstract: In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a processing space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first gas supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.

Abstract: A showerhead is configured to be mounted inside a processing chamber and provide a processing gas onto a semiconductor wafer inside the processing chamber. The showerhead includes a supply plenum, a faceplate, and an electrode plate assembly. The faceplate is disposed at a side of the supply plenum. The electrode plate assembly is disposed between a gas source and the supply plenum. The electrode plate assembly includes a first plate having a unitary construction and having a plurality of first gas holes, and a second plate having a unitary construction and having a plurality of second gas holes. The second plate is located between the first plate and the supply plenum and separated from the first plate. The plurality of second gas holes are partially overlapped but misaligned with the plurality of first gas holes. A semiconductor apparatus having the same and a semiconductor process are also provided.

Abstract: The present inventors have conceived of a multi-stage process gas delivery system for use in a substrate processing apparatus. In certain implementations, a first process gas may first be delivered to a substrate in a substrate processing chamber. A second process gas may be delivered, at a later time, to the substrate to aid in the even dosing of the substrate. Delivery of the first process gas and the second process gas may cease at the same time or may cease at separate times.

Abstract: Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

Abstract: Outer distribution rings and gas distribution apparatus with outer distribution rings to deliver a gas flow to a process region of a process chamber are described. The outer distribution rings include at least one plenum in fluid communication with a plurality of openings forming a plurality of trenches to allow gas to flow from the plenum through the openings and down an inner peripheral face of the outer distribution ring.

Abstract: An apparatus for plasma atomic layer deposition includes a tubular, insulating injector adhesion preventive member mountable to a gas-introducing opening section from inside a film forming chamber, a tubular, insulating exhaust adhesion preventive member mountable to an exhaust opening section from inside the film forming chamber, and an insulating film forming chamber adhesion preventive member mountable to an inner wall side of the film forming chamber. The injector adhesion preventive member and the exhaust adhesion preventive member are separated from each of a plate electrode and a counter electrode side, and the film forming chamber adhesion preventive member is disposed on each side of the injector adhesion preventive member and the exhaust adhesion preventive member to be separated from each of the plate electrode and the counter electrode side. The apparatus further includes an upper and lower inert-gas supply port that purges inert gas toward inside the film forming chamber.

Abstract: A device for atomic layer deposition includes: an injector installed to an opening of a film deposition chamber; and an injector adhesion preventive member installed by insertion into the opening, wherein the injector includes an injector raw material gas supply path, an injector reactant gas supply path, and an injector inert gas supply path, the respective paths being partitioned from each other, the injector adhesion preventive member includes an adhesion preventive member raw material gas supply path, an adhesion preventive member reactant gas supply path, and an adhesion preventive member inert gas supply path, the respective paths being partitioned from each other, and the adhesion preventive member inert gas supply path is provided such that the inert gas flows in a clearance between an outer peripheral side of the injector adhesion preventive member and an inner peripheral side of the opening.

Abstract: A cleaning apparatus of an exhaust path of a process reaction chamber used in a manufacturing of articles including a semiconductor or an LCD. The cleaning apparatus of the exhaust path includes a housing having an inflow pipe, connected to an upstream end of the exhaust path, an outflow pipe, connected to a downstream end of the exhaust path, and a connecting pipe disposed between the inflow pipe and the outflow pipe. A radio frequency generator in the housing applies radio frequency power to the inflow pipe and to the outflow pipe via respective coils. Plasma induced within the inflow and outflow pipes from RF power applied via the respective coils causes the generation of radicals from the exhaust gas flowing within. The radicals act to dislodge accumulated particulates within the exhaust path downstream of the cleaning apparatus.

Abstract: A deposition unit for a thin film deposition system includes one or more of deposition heads and a gas manifold. Each deposition head includes an output face having a plurality of gas openings, a mounting face including a plurality of deposition head gas ports, and connecting gas passages. The gas manifold includes an attachment face having one or more interface regions, each interface region including a plurality of manifold gas ports in positions corresponding to the deposition head gas ports. Each deposition head is fastened to the gas manifold in an interface region with sealing elements positioned between the manifold gas ports and the deposition head gas ports. The mounting face of each deposition head and the attachment face of the gas manifold include alignment features for aligning each deposition head with the interface region of the gas manifold.

Abstract: Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

Abstract: A gas distribution system is disclosed in order to obtain better film uniformity on a wafer. The better film uniformity may be achieved by utilizing an expansion plenum and a plurality of, for example, proportioning valves to ensure an equalized pressure or flow along each gas line disposed above the wafer.

Abstract: The present invention relates to an equipment front end module (EFEM) configured to perform wafer transfer between process equipment and a wafer storage device that stores wafers. More particularly, the present invention relates to an equipment front end module (EFEM), in which harmful substances such as fumes, etc. are prevented from accumulating on an exhaust unit to maintain cleanness in a wafer transfer chamber at a high level, thus preventing contamination in the wafer transfer chamber.

Abstract: A chamber lid assembly includes: a central channel having an upper portion and a lower portion and extending along a central axis; a housing at least partially defining a first and a second annular channel, each fluidly coupled to the central channel; a first plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the first annular channel and the central channel; a second plurality of apertures disposed along a horizontal plane through the housing to provide a multi-aperture inlet between the second annular channel and the central channel, wherein the first and the second plurality of apertures are angled differently with respect to the central axis so as to induce opposing rotational flow of gases about the central axis; and a tapered bottom surface extending from the lower portion of the central channel to a peripheral portion of the chamber lid assembly.

Abstract: A first device is provided. The device includes a print head. The print head further includes a first nozzle hermetically sealed to a first source of gas. The first nozzle has an aperture having a smallest dimension of 0.5 to 500 microns in a direction perpendicular to a flow direction of the first nozzle. At a distance from the aperture into the first nozzle that is 5 times the smallest dimension of the aperture of the first nozzle, the smallest dimension perpendicular to the flow direction is at least twice the smallest dimension of the aperture of the first nozzle.

Abstract: Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD).

Abstract: A gas supply system includes a first device to a third device. A plurality of integral units of the first device is configured to select one or more gases from one or more gas sources and supply the selected gases. The second device is configured to distribute plural gases from the integral units and supply the distributed gases while controlling flow rates of the distributed gases. The third device is configured to exhaust the gases within the gas supply system to a gas exhaust device.

Abstract: A nozzle for uniform plasma processing comprises an inlet portion and an outlet portion. The inlet portion has a side surface substantially parallel to a vertical axis. The inlet portion comprises a plurality of gas channels. The outlet portion is coupled to the inlet portion. The outlet portion comprises a plurality of outlets. At least one of the outlets is at an angle other than a right angle relative to the vertical axis.

Abstract: An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

Abstract: A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

Abstract: Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.