Abstract: Exemplary semiconductor processing chamber showerheads may include a dielectric plate characterized by a first surface and a second surface opposite the first surface. The dielectric plate may define a plurality of apertures through the dielectric plate. The dielectric plate may define a first annular channel in the first surface of the dielectric plate, and the first annular channel may extend about the plurality of apertures. The dielectric plate may define a second annular channel in the first surface of the dielectric plate. The second annular channel may be formed radially outward from the first annular channel. The showerheads may also include a conductive material embedded within the dielectric plate and extending about the plurality of apertures without being exposed by the apertures. The conductive material may be exposed at the second annular channel.

Abstract: Gas distribution assemblies and methods for providing a flow of gases to a process station are described. The gas distribution assemblies comprise a pumping liner with a showerhead and a gas funnel positioned therein. The pumping liner has an inner wall that slants at a first angle relative to a central axis of the gas distribution assembly so that the inner wall adjacent the bottom wall of the pumping liner is closer to the central axis than the inner wall adjacent the top wall. The gas funnel and pumping liner form a plenum between the outer wall of the gas funnel, a cavity in the bottom wall of the gas funnel and the inner wall of the pumping liner.

Abstract: Apparatus and methods for providing high velocity gas flow showerheads for deposition chambers are described. The showerhead has a faceplate in contact with a backing plate that has a concave portion to provide a plenum between the backing plate and the faceplate. A plurality of thermal elements is within the concave portion of the backing plate and extends to contact the faceplate.

Abstract: Bottom-fed ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules comprise an outer cylindrical wall and an inner cylindrical wall defining a flow channel in between and a bottom wall having a top surface with a plurality of concentric elongate walls, each wall comprising an opening offset from the opening in adjacent walls defining a gas exchange zone through which a carrier gas flows in contact with the precursor.

Abstract: Gas injector inserts having a wedge-shaped housing, at least one first slot and at least one second slot are described. The housing has a first opening in the back face that is in fluid communication with the first slot in the front face and a second opening in the back face that is in fluid communication with the second slot in the front face. Each of the first slot and the second slot has an elongate axis that extends from the inner peripheral end to the outer peripheral end of the housing. The gas injector insert is configured to provide a flow of gas through the first slots at supersonic velocity. Gas distribution assemblies and processing chambers including the gas injector inserts are described.

Abstract: A film-forming apparatus for forming a predetermined film on a substrate by plasma ALD includes a chamber, a stage, a shower head having an upper electrode and a shower plate insulated from the upper electrode, a first high-frequency power supply connected to the upper electrode, and a second high-frequency power supply connected to an electrode contained in the stage. A high-frequency power is supplied from the first high-frequency power supply to the upper electrode, thereby forming a high-frequency electric field between the upper electrode and the shower plate and generating a first capacitively coupled plasma. A high-frequency power is supplied from the second high-frequency power supply to the electrode, thereby forming a high-frequency electric field between the shower plate and the electrode in the stage and generating a second capacitively coupled plasma that is independent from the first capacitively coupled plasma.

Abstract: Methods and apparatus to reduce pressure fluctuations in a chemical delivery system for a process chamber are provided herein. In some embodiments, a chemical delivery system for a process chamber, includes: a carrier gas supply; an ampoule fluidly coupled to the carrier gas supply via a first supply line, wherein the ampoule is configured to supply one or more process gases to the process chamber via a second supply line; an inlet valve disposed in line with the first supply line to control a flow of a carrier gas from the carrier gas supply to the ampoule; and a first control valve disposed in line with a pressure regulation line, wherein the pressure regulation line is fluidly coupled to the first supply line at a tee location between the carrier gas supply and the inlet valve.

Abstract: Embodiments of showerheads are provided herein. In some embodiments, a showerhead for use in a process chamber includes a gas distribution plate having an upper surface and a lower surface; a plurality of channels extending through the gas distribution plate substantially perpendicular to the lower surface; a plurality of first gas delivery holes extending from the upper surface to the lower surface between adjacent channels of the plurality of channels to deliver a first process gas through the gas distribution plate; and a plurality of second gas delivery holes extending from the plurality of channels to the lower surface to deliver a second process gas therethrough without mixing with the first process gas.

Abstract: The present disclosure relates to an apparatus for trapping a reaction by-products produced during an organic film deposition process, and an object of the present disclosure is to provide a trapping apparatus having an internal trapping tower in which disc-type trapping units, which each have structure-type trapping plates having a large surface area per unit area in order to trap reaction by-products contained in an unreacted gas introduced into the trapping apparatus after an organic film deposition process, among semiconductor manufacturing processes, is performed in the process chamber, and a trapping disc configured to concentrate a flow of the gas or disperse or discharge the gas, are vertically arranged in multiple layers, such that the trapping apparatus traps the reaction by-products in the form of a thin film in a state in which the residence time of the gas is increased and uniform temperature distribution is maintained.

Abstract: A coating apparatus and movable electrode arrangement, movable support arrangement, and application thereof are disclosed. The coating apparatus includes a reactor chamber body and a movable support arrangement. The reactor chamber body has a reactor chamber. The movable support arrangement is received in the reactor chamber and includes one or more electrodes and a movable support. The movable support is adapted for rotating relative to the reactor chamber body. At least one of the electrodes is arranged on the movable support so as for rotating together with the movable support. One or more workpieces to be coated are adapted for being held on the movable support to move together with the movable support.

Abstract: A grounding cap module includes a main body, a frame portion, and a cap portion. The main body includes a first opening penetrating the main body and a grounding portion disposed on a periphery of the main body and configured to be electrically grounded. The frame portion is disposed on the main body and includes a second opening aligned with the first opening. The cap portion is disposed on the frame portion and covers the second opening, wherein the first opening, the second opening and the cap portion define a receiving cavity. A gas injection device and an etching apparatus using the same are also provided.

Abstract: A substrate processing system for treating a substrate includes a manifold and a plurality of injector assemblies located in a processing chamber. Each of the plurality of injector assemblies is in fluid communication with the manifold and includes a valve including an inlet and an outlet. A dose controller is configured to communicate with the valve in each of the plurality of injector assemblies and adjust a pulse width supplied to the valve in each of the plurality of injector assemblies based on at least one of manufacturing differences between the valves in each of the plurality of injector assemblies and non-uniformities of the valves in each of the plurality of injector assemblies to cause a desired dose to be supplied from the valve in each of the plurality of injector assemblies.

Abstract: A shower head assembly of an atomic layer deposition device has a first trapezoidal column component, a second trapezoidal column component and a column component, wherein a first bottom edge of the first trapezoidal column component is connected to a second top edge of the second trapezoidal column component, and a second bottom edge of the second trapezoidal column component is connected to a top edge of the column component. The first trapezoidal column component has a first bottom dimension distance, the second trapezoidal column component has a second vertical distance, and the column component has a column vertical distance, wherein a ratio of the column vertical distance to the second vertical distance is greater than or equal to 1.2, and a total distance of the second vertical distance and the column vertical distance is less than the first bottom dimension distance.

Abstract: Gas injectors for providing uniform flow of fluid are provided herein. The gas injector includes a plenum body. The plenum body includes a recess, a protrusion adjacent to the recess and extending laterally away from the plenum body, and a plurality of nozzles extending laterally from an exterior surface of the plenum body. The plenum body has a plurality of holes in an exterior wall of the plenum body. Each nozzle is in fluid communication with an interior volume of the plenum body. By directing the flow of fluid, the gas injector provides for a uniform deposition.

Abstract: A parallelepipedal low-pressure plasma chamber body of glass is disclosed. The low-pressure plasma chamber may have electrodes at opposing sides of the low-pressure plasma chamber body. Furthermore, the low-pressure plasma chamber may have at opposing sides a door and a rear wall closure. The door and rear wall closure may in each case have at least one media connection in order to achieve a uniform gas flow in the low-pressure plasma chamber. The door may be assembled on the collar of the low-pressure plasma chamber body which extends radially away from the longitudinal axis of the low-pressure plasma chamber body. The low-pressure plasma chamber body is preferably produced using the pressing method or blow-and-blow method, in an analogous manner to industrial glass bottle production.

Abstract: A photoresist coating device includes a liquid vaporization module and a photoresist coating module. The liquid vaporization module is for converting a liquid photoresist into a gaseous photoresist and conveying the gaseous photoresist to a photoresist coating module. The photoresist coating module comprises a vapor coating unit, a cover plate and a carrying table, in which the vapor coating unit comprises a vapor channel and a vapor spray hole, in which the vapor spray hole is provided through the cover plate; the carrying table is for loading a substrate; and the cover plate is provided on a side of the carrying table close to the substrate. The vapor coating unit acquires the gaseous photoresist through the vapor channel and conveys the gaseous photoresist to a surface to be coated of the substrate on the carrying table through the vapor spray hole to form a photoresist coating.

Abstract: A faceplate of a showerhead has a bottom side that faces a plasma generation region and a top side that faces a plenum into which a process gas is supplied during operation of a substrate processing system. The faceplate includes apertures formed through the bottom side and openings formed through the top side. Each of the apertures is formed to extend through a portion of an overall thickness of the faceplate to intersect with at least one of the openings to form a corresponding flow path for process gas through the faceplate. Each of the apertures has a cross-section that has a hollow cathode discharge suppression dimension in at least one direction. Each of the openings has a cross-section that has a smallest cross-sectional dimension that is greater than the hollow cathode discharge suppression dimension.

Abstract: Certain embodiments of the present disclosure relate to chamber liners, processing chambers that include chamber liners, and methods of using the same. In one embodiment, a processing chamber comprises a chamber body defining an interior volume and comprising an access port for inserting a substrate into the interior volume; a cathode assembly configured to generate a plasma within the interior volume; and a chamber liner comprising a smooth interior surface that is radially symmetric about a vertical axis of the chamber body. The chamber liner is configured to move between a loading position and an operation position.

Abstract: Embodiments described herein include an applicator frame for a processing chamber. In an embodiment, the applicator frame comprises a first major surface of the applicator frame and a second major surface of the applicator frame opposite the first major surface. In an embodiment, the applicator frame further comprises a through hole, wherein the through hole extends entirely through the applicator frame. In an embodiment, the applicator frame also comprises a lateral channel embedded in the applicator frame. In an embodiment the lateral channel intersects the through hole.

Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.