Abstract: A photolithographic mask for patterning a photosensitive material, in particular on a wafer, has at least one structure region for imaging a structure on the photosensitive material, and an absorber structure for absorbing incident radiation. At least one structure region is provided and has at least one thin protective coating of only a few atomic layers made of chemically and mechanically resistive material selected from Al2O3, Ta2O5, ZrO2, and HfO2formed by atomic layer chemical vapor deposition (ALCVD) so that the protective coating constitutes a negligible alteration of nominal or critical dimensions for the structure region, and in which additional absorption or reflection losses are negligibly low. In this way, the photolithographic mask can be cleaned chemically and/or mechanically, without the structure regions being attacked and damaged by the chemical and/or mechanical cleaning media. Furthermore, a plurality of methods are possible for fabricating this photolithographic mask.

Abstract: During the lithographic exposure of layers to be patterned on semiconductor products, use is made of masks whose mask pattern is imaged on a reduced scale, with the aid of an imaging optical arrangement, onto the layer to be patterned. After the patterning of the mask layer, a membrane is placed onto the mask with a membrane holder in order to keep dust or other contaminants in the air away from the plane of the mask layer during the exposure. When the mask and the membrane holder are mounted, manufacturing-dictated height deviations thereof lead to subsequent distortion of the mask structure of the mask layer, which is transferred to the semiconductor product by means of the lithography. Here, the height tolerances of the mask and of the membrane holder are measured and a corrected mask pattern is calculated, the mask structures of which are offset in the lateral direction such that the mask distortions resulting from the mounting of the membrane holder are compensated for.

Abstract: A photomask with desired illumination conditions can be constructed by combining a base pattern of openings with an assist pattern which includes openings that are offset from respectively corresponding openings of the base pattern by a preset angular distance.

Abstract: The present invention generally relates to improved binary half tone (“BHT”) photomasks and microscopic three-dimensional structures (e.g., MEMS, micro-optics, photonics, micro-structures and other three-dimensional, microscopic devices) made from such BHT photomasks. More particularly, the present invention provides a method for designing a BHT photomask layout, transferring the layout to a BHT photomask and fabricating three-dimensional microscopic structures using the BHT photomask designed by the method of the present invention. In this regard, the method of designing a BHT photomask layout comprises the steps of generating at least two pixels, dividing each of the pixels into sub-pixels having a variable length in a first axis and fixed length in a second axis, and arraying the pixels to form a pattern for transmitting light through the pixels so as to form a continuous tone, aerial light image.

Abstract: A method for fabricating a photomask for an integrated circuit. The method includes, for example, providing a substrate with at least one trench, providing a prepatterned surface at the bottom of the trench, and providing a multilayer coating over the substrate. As a result, the multilayer coating forms a reflection region on the surface of the substrate outside the trench and a non-reflection region in the trench. The invention additionally provides a corresponding photomask.

Abstract: The relative surface area sizes of portions having distinct phase-shift and transmission of light of a pattern on a phase-shift mask substantially obey the condition that the product of surface area and transmission of the electrical field strength is the same for all of the portions. Then, frequency doubling occurs due to vanishing zero order diffraction orders and in the case of high-transition attenuated phase-shift masks a large first order diffraction amplitude reveals an even an improved as compared with conventional phase-shift masks. Two-dimensional matrix-like structures particularly on attenuated or halftone phase-shift masks can be arranged to image high-density patterns on a semiconductor wafer. The duty cycles of pattern matrices can be chosen being different from one in two orthogonal directions nevertheless leading to frequency doubling.

Abstract: A bilayer hardmask 26 is used to manufacture a mask 10, which is can be implemented to pattern a resist 165 on a semiconductor wafer 150. In one embodiment, the bilayer hardmask 26 has two layers: a first hardmask layer 28 and a second hardmask layer 30. The first hardmask layer 28 may be carbon and can be etched selective to the overlying second hardmask layer 30 and an underlying absorber structure 20. In one embodiment, the second hardmask layer 30 is a transparent layer of SiON, SiN, or SiO2. The bilayer hardmask 26 allows for a thinner resist to be used during fabrication of the mask 10.

Abstract: Non-uniformity and image shortening are substantially reduced in an image printed on a substrate using a photolithographic mask in which the mask pattern includes at least one lines and spaces array adjacent to at least one clear region. At least one line feature is incorporated within the clear region of the mask pattern and is disposed in proximity to the lines and spaces array. The line feature has a line width that is smaller than a minimum resolution of the optical projection system. The image is printed by illuminating the photolithographic mask and projecting light transmitted through the photolithographic mask onto the substrate using the optical projection system.

Abstract: A phase shift mask having transmission properties that are dependent at least in part on an intensity of an incident light beam. The phase shift mask has a mask substrate that is substantially transparent to the incident light beam. A first phase shift layer is disposed on the mask substrate. The first phase shift layer has a refractive index that is nonlinear with the intensity of the incident light beam. The refractive index of the first phase shift layer changes with the intensity of the incident light beam on the phase shift mask. By using a first phase shift layer on the phase shift mask that has a refractive index that is non linear with the intensity of the incident light beam, properties of a light beam transmitted through the first phase shift layer, such as interference patterns in the transmitted light beam, can be adjusted by adjusting the intensity of the incident light beam.

Abstract: The work load spent on designing a trench-type, Levenson-type phase shift mask is lightened and the working time for the designing process is shortened. A pattern 11, having a plurality of apertures, is designed by means of a designing tool 10. In a database 30 are prepared optimal functions that indicate optimal combinations of undercut amounts Uc and bias correction amounts ? according to each set of dimension conditions. An optimal function extraction tool 20 extracts optimal functions Fp and Fs that are matched with dimension conditions Mp and Ms on pattern 11, and determining tool 40 determines optimal values of the undercut amount Uc and the bias correction amount ? based on the extracted optimal function. A three-dimensional structure determining tool 50 determines a three-dimensional structural body 13, having a depth d and the undercut amount Uc, for an aperture by which the phase of transmitted light is shifted by 180 degrees.

Abstract: There is provided a pellicle for lithography which has at least, a pellicle film for dustproof protection, a pellicle frame to which the pellicle film is adhered, an adhesive layer provided on one end face of the pellicle frame in order to adhere the pellicle film, and a sticking layer formed on another end face of the pellicle frame, wherein the pellicle film is formed by a die coating machine and a method for producing it. There can be provided a relatively large-sized pellicle for lithography which has a pellicle film with little unevenness of film thickness and with a uniform and high light transmission can be produced easily and at low cost, compared with those using the conventional spin coater.

Abstract: A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a half-tone phase-shift photomask by forming patterns to be transferred to a wafer on a photomask blank for a chromium-containing half-tone phase-shift mask. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.

Abstract: The invention relates to a method for the production of masks, in particular for the production of alternating phase shift masks (1), or of chromeless phase shift masks or phase shift masks structured by quartz etching, respectively, as well as to a mask (1), in particular photomask, for the production of semiconductor devices, comprising at least one product field area (6a) and a compensation structure (5) positioned outside the product field area (6a), wherein the compensation structure (5) comprises at least one electroconductive region (8b) that is electrically connected with the product field area (6a).

Abstract: A crystallization apparatus includes a mask and an illumination system which illuminates the mask with a light beam, the light beam from the illumination system becoming a light beam having a light intensity distribution with an inverse peak pattern when transmitted through the mask, and irradiating a polycrystal semiconductor film or an amorphous semiconductor film, thereby generating a crystallized semiconductor film. The mask includes a light absorption layer having light absorption characteristics according to the light intensity distribution with the inverse peak pattern.

Abstract: A mask pattern 40 including a light-shielding portion 41 constituted by a light-shielding film made of a chromium film or the like and phase shifters 42 and 43 is formed on a transparent substrate 30. The phase shifters 42 and 43 generate a phase difference of 180 degrees with respect to exposure light between the phase shifters and the transparent substrate 30. A first light intensity generated in a light-shielded image formation region corresponding to the mask pattern 40 on an exposed material by the exposure light transmitted through the phase shifters 42 and 43 is not more than four times a second light intensity generated in the light-shielded image formation region by the exposure light that is transmitted through the periphery of the mask pattern 40 on the transparent substrate 30 and goes into the back side of the mask pattern 40.

Abstract: A reflective optical mirror for semiconductor fabrication includes a capping layer above a reflective multilayer sequence. A doping is provided for the capping layer and an artificial oxide layer is grown on the capping layer with the aid of hydrogen peroxide, in particular in the presence of a catalyst. The artificially grown oxide layer is more homogeneous than a naturally grown oxide and thereby improves optical properties of the mirror during a lithographic exposure of semiconductor products.

Abstract: A method of fabricating a photomask having improved critical dimension (CD) uniformity that meets or exceeds 90 nanometer technology requirements. The method includes the steps of: providing a transparent substrate covered with a layer of opaque material and a layer of photoresist; patterning the layer of photoresist to expose an area of the layer of opaque material that has a shape that follows a contour of a main pattern area to be defined by the layer of opaque material; removing the exposed area to define the layer of opaque material into the main pattern area and an area that surrounds the main pattern area; removing the patterned layer of photoresist; and removing the surrounding area of the layer of opaque material.

Abstract: A halftone phase-shift mask blank, in which the phase shifter film is composed of two layers, a low-transmission layer having a principal function of transmittance control, and a high-transmission layer having a principal function of phase shift control, the extinction coefficient K1 of the low-transmission layer and the extinction coefficient K2 of the high-transmission layer satisfy K2<K1?3.0 at an exposure wavelength ? falling between 140 nm and 200 nm, and the thickness d1 of the low-transmission layer satisfies 0.001?K1d1/??0.500 at the exposure wavelength ?.

Abstract: A reflective reticle includes reflective regions of different phases, with one of the reflective regions being, for example, 180 degrees out of phase with another region. The reflective reticle also includes absorptive regions, which may be placed between reflective regions of opposite phases. The reticle may include a reflector, made up of multiple reflective layers, atop a substrate of absorptive material. The reflector may have some of the reflective areas removed in the phase-shift regions, and substantially all of the reflective layers removed in the absorptive regions. The reticle may allow for greater resolution extreme ultraviolet (EUV) lithography.

Abstract: A mask pattern to be provided on a transparent substrate 2 includes a semi-light-shielding portion 3 which transmits exposure light in the same phase as that of the light-transmitting portion 4 and a phase shifter 5 which transmits exposure light in a phase opposite to that of the light-transmitting portion 4. The semi-light-shielding portion 3 has a transmittance which allows exposure light to be partially transmitted. The phase shifter 5 is provided in a region of the mask pattern in which light transmitted through the phase shifter 5 can cancel part of the light transmitted through the light-transmitting portion 4 and the semi-light-transmitting portion 3.