Abstract: An integrated fluxgate device, which includes a magnetic core, an excitation coil, and a sense coil. The magnetic core has a longitudinal edge and a terminal edge. The excitation coil coils around the longitudinal edge of the magnetic core, and the excitation coil has a first number of excitation coil members within a proximity of the terminal edge. The sense coil coils around the longitudinal edge of the magnetic core, and the sense coil has a second number of sense coil members within the proximity of the terminal edge. For reducing fluxgate noise, the second number of sense coil members may be less than the first number of excitation coil members within the proximity of the terminal edge.

Abstract: Stacked semiconductor die assemblies with die substrate extensions are disclosed herein. In one embodiment, a semiconductor die assembly can include a package substrate, a first die mounted to the package substrate, and a second die mounted to the first die. The first die includes a first die substrate, and the second die includes a second die substrate attached to the first die substrate. At least one of the first and second dies includes a semiconductor substrate and a die substrate extension adjacent the semiconductor substrate. The die substrate extension comprises a mold material that at least partially defines a planform.

Abstract: Chip packages and electronic devices are provided that include a heat sink flexibly interfaced with a die for enhanced temperature control. In one example, a solid state electronic assembly is provided that includes a first integrated circuit (IC) die mounted to a substrate and a heat sink mounted over the first IC die. The heat sink includes a thermally conductive plate and a first thermal carrier. The first thermal carrier has a first end mechanically fixed to the conductive plate. The first thermal carrier has a second end cantilevered from the conductive plate. The second end is in conductive contact with a top surface of the first IC die.

Abstract: The present invention is to provide a dicing-tape integrated film for the backside of a semiconductor that is capable of suppressing the increase of the peel strength between the dicing tape and the film for the backside of a flip-chip semiconductor due to heating. The dicing-tape integrated film for the backside of a semiconductor has a dicing tape having a substrate and a pressure-sensitive adhesive layer formed on the substrate and a film for the backside of a flip-chip semiconductor formed on the pressure-sensitive adhesive layer of the dicing tape, in which the difference (?2??1) of the surface free energy ?2 and the surface free energy ?1 is 10 mJ/m2 or more, where ?1 represents the surface free energy of the pressure-sensitive adhesive layer and ?2 represents the surface free energy of the film for the backside of a flip-chip semiconductor.

Abstract: A package includes a die, which includes a semiconductor substrate, a plurality of through-vias penetrating through the semiconductor substrate, a seal ring overlapping and connected to the plurality of through-vias, and a plurality of electrical connectors underlying the semiconductor substrate and connected to the seal ring. An interposer is underlying and bonded to the die. The interposer includes a substrate, and a plurality of metal lines over the substrate. The plurality of metal lines is electrically coupled to the plurality of electrical connectors. Each of the plurality metal lines has a first portion overlapped by the first die, and a second portion misaligned with the die. A thermal conductive block encircles the die, and is mounted on the plurality of metal lines of the interposer.

Abstract: A semiconductor package structure and a manufacturing method thereof are provided. The semiconductor package structure includes a redistribution structure, at least one package structure and a second encapsulant. The redistribution structure has a first surface and a second surface opposite to the first surface. The package structure is over the first surface and includes at least one die, a first encapsulant, a redistribution layer, and a plurality of second conductive terminals. The die has a plurality of first conductive terminals thereon. The first encapsulant encapsulates the die and exposes at least part of the first conductive terminals. The redistribution layer is over the first encapsulant and is electrically connected to the first conductive terminals. The second conductive terminals are electrically connected between the redistribution layer and the redistribution structure. The second encapsulant, encapsulates the package structure and exposes at least part of the second conductive terminals.

Abstract: A semiconductor device comprises a first metal lead frame portion with a chip mounting surface, a second metal lead frame portion, and a semiconductor chip with a first surface facing and attached to the chip mounting surface of the first metal lead frame part and a second surface facing away from the chip mounting surface of the first metal lead frame part. A connector portion is electrical connected to the second metal lead frame portion and is attached to the second surface of the semiconductor chip. The connector portion covers the entirety of a planar area of the semiconductor chip when viewed along a direction orthogonal to second surface of the semiconductor chip.

Abstract: A semiconductor device includes a lead frame site including a die attach region and corrugated metal leads around the die attach region. Each of the corrugated metal leads includes two or more corrugations. Each of the two or more corrugations includes a first flat horizontal portion, a first vertical portion with a first end directly adjacent and connected to a first end of the first flat horizontal portion, a second flat horizontal portion with a first end directly adjacent and connected to a second end of the first vertical portion, and a second vertical portion with a first end directly adjacent and connected to a second end of the second flat horizontal portion. The first flat horizontal portion is in a different plane than the second flat horizontal portion.

Abstract: A solder bump structure for a ball grid array (BGA) includes at least one under bump metal (UBM) layer and a solder bump formed over the at least one UBM layer. The solder bump has a bump width and a bump height and the ratio of the bump height over the bump width is less than 1.

Abstract: One or more embodiments are directed to semiconductor packages that include a pillar and bump structures. The semiconductor packages include a die that has recess at a perimeter of the semiconductor die. The semiconductor package includes an encapsulation layer that is located over the semiconductor die filling the recess and surrounding side surfaces of the pillars. The package may be formed on a wafer with a plurality of die and may be singulated into a plurality of packages.

Abstract: A metal bump structure for use in a driver IC includes a metal bump disposed on a matrix, an optional capping layer disposed on the metal bump to completely cover the metal bump and a protective layer disposed on the metal bump to completely cover and protect the metal bump or the optional capping layer and so that the metal bump is not exposed to an ambient atmosphere. The protective layer or the optional capping layer may have a fringe disposed on the matrix.

Abstract: Embodiments of the present disclosure describe integrated circuit (IC) package assemblies and methods of fabricating IC package assemblies. These embodiments include dies embedded in embedding substrates to provide larger pitch interconnects to facilitate coupling to substrates or circuit boards through flip chip techniques. The embedding substrates may contain conductive pathways for coupling die contacts to larger pitch contacts located on the embedding substrate. By embedding the dies in the embedding substrates, dies having smaller pitch contacts can be used in package assemblies with larger pitch components without the need for silicon interposers and without having to utilize more stringent pick and place operations. Other embodiments may be described and/or claimed.

Abstract: A leadframe matrix for mounting and packaging semiconductor dice includes a plurality of leadframes each including leads arranged along peripheral sides thereof. An interconnecting leadframe portion connects a first peripheral side of a first one of the plurality of leadframes to a second peripheral side of a second one of the plurality of leadframes. The leads along the first peripheral side include partially etched portions. The partially etched portions of the leads are at least partially contiguous with and connected to the interconnecting leadframe portions.

Abstract: A fan-out semiconductor package includes: a first interconnection member having a through-hole; a first semiconductor chip disposed in the through-hole and having an active surface having connection pads disposed thereon and an inactive surface; a first encapsulant encapsulating at least portions of the first interconnection member and the first semiconductor chip; a second interconnection member disposed on the first interconnection member and the first semiconductor chip; a second semiconductor chip disposed on the first encapsulant and having an active surface having connection pads disposed thereon; and a second encapsulant encapsulating at least portions of the second semiconductor chip.

Abstract: Various embodiments provide method of manufacturing a semiconductor component, wherein the method comprises providing a layer stack comprising a carrier and a thinned wafer comprising a metallization layer on one side, wherein the thinned wafer is placed on a first side of the carrier; forming an encapsulation encapsulating the layer stack at least partially; and subsequently thinning the carrier from a second side of the carrier, wherein the second side is opposite to the first side of the carrier.

Abstract: In accordance with the present invention, there are provided heat dispersing articles, assemblies containing same, methods for the preparation thereof, and various uses therefor. In one aspect of the present invention, there are provided heat dispersing articles. In another aspect of the present invention, there are provided methods for producing the above-referenced articles. In yet another aspect of the present invention, there are provided assemblies containing the above-referenced articles. In still another aspect of the present invention, there are provided methods for making the above-referenced assemblies. In yet another aspect, there are provided methods to dissipate the heat generated by portable electronic devices.

Abstract: Apparatuses relating generally to a microelectronic package having protection from interference are disclosed. In an apparatus thereof, a substrate has an upper surface and a lower surface opposite the upper surface and has a ground plane. A first microelectronic device is coupled to the upper surface of the substrate. Wire bond wires are coupled to the ground plane for conducting the interference thereto and extending away from the upper surface of the substrate. A first portion of the wire bond wires is positioned to provide a shielding region for the first microelectronic device with respect to the interference. A second portion of the wire bond wires is not positioned to provide the shielding region. A second microelectronic device is coupled to the substrate and located outside of the shielding region. A conductive surface is over the first portion of the wire bond wires for covering the shielding region.

Abstract: A package includes a die, which includes a semiconductor substrate, a plurality of through-vias penetrating through the semiconductor substrate, a seal ring overlapping and connected to the plurality of through-vias, and a plurality of electrical connectors underlying the semiconductor substrate and connected to the seal ring. An interposer is underlying and bonded to the die. The interposer includes a substrate, and a plurality of metal lines over the substrate. The plurality of metal lines is electrically coupled to the plurality of electrical connectors. Each of the plurality metal lines has a first portion overlapped by the first die, and a second portion misaligned with the die. A heat spreader encircles the die and the interposer. A wire includes a first end bonded to one of the plurality of metal lines, and a second end bonded to the heat spreader.

Abstract: A package includes a device die, a through-via having a sand timer profile, and a molding material molding the device die and the through-via therein, wherein a top surface of the molding material is substantially level with a top surface of the device die. A dielectric layer overlaps the molding material and the device die. A plurality of redistribution lines (RDLs) extends into the dielectric layer to electrically couple to the device die and the through-via.

Abstract: A semiconductor package structure and a fabrication method thereof are provided. The fabrication method comprises: providing a substrate strip, the substrate strip comprising a plurality of substrate units which comprise a substrate unit; disposing a plurality of chips on the plurality of substrate units; disposing a packaging encapsulant on the substrate strip to encapsulate the chips; forming a warp-resistant layer on a top surface of the packaging encapsulant; and dividing the substrate strip to separate the plurality of substrate units to further fabricate a plurality of semiconductor package structures which comprise a semiconductor package structure comprising the substrate unit, wherein the warp-resistant layer is formed of a selected material with a selected thickness to make a variation of warpage of the semiconductor package structure at a temperature between 25° C. and 260° C. to be smaller than 560 ?m.