Abstract: A resist composition containing a polymeric compound having a constitutional unit (a01) derived from a compound represented by General Formula (a0-1).

Abstract: A resist composition containing a polymeric compound having a constitutional unit (a01) derived from a compound represented by General Formula (a0-1).

Abstract: The present invention provides a coating-type composition for forming an organic film containing: a polymer having a structure shown by the following general formula (1) as a partial structure; and an organic solvent, where in the formula (1), ring structures Ar1 and Ar2 represent a benzene ring or a naphthalene ring optionally having a substituent, and W1 represents an aryl group having 6 to 30 carbon atoms and optionally having a substituent. This provides a coating-type composition for forming an organic film that can form an organic film having high pattern-curving resistance and high dry-etching resistance, the composition being excellent in solvent solubility and having a low generation of defects.

Abstract: An energy-sensitive composition including a polysilane, a base generator, and a solvent, the base generator including a compound represented by formula (b1) and a photo base generator: in which Rb1 to Rb3 each independently represents a hydrogen atom, halogen atom, hydroxyl group, mercapto group, sulfide group, silyl group, silanol group, nitro group, nitroso group, sulfonato group, phosphino group, phosphinyl group, phosphonato group or organic group; Rb4 and Rb5 each independently represent a hydrogen atom, halogen atom, hydroxyl group, mercapto group, sulfide group, silyl group, silanol group, nitro group, nitroso group, sulfino group, sulfo group, sulfonato group, phosphino group, phosphinyl group, phosphono group, phosphonato group or aliphatic group; and Rb6 represents a hydrogen atom, alkyl group or alkoxy group.

Abstract: An X-ray-sensitive film includes an acid-hydrolyzed palm mesocarp, a starch, a cellulose, a synthetic polymer, a plant hydrogel, a cyanoacrylate adhesive, glycerin, and an x-ray-sensitive dye. A method of preparing the X-ray-sensitive film includes 32.5 to 45 wt % cellulose based on a total weight of the X-ray-sensitive film, a tensile modulus of 0.75 to 2.5 GPa, a tensile strength of 75 to 125 MPa/kg·m3, a water absorption of 0.00 to 0.16% measured according to ASTM D570, a carbonate content of 100 to 200 ppm, and shows no cracks when tested according to ASTM D5419.

Abstract: A mask topology optimization method for surface plasmon near-field photolithography, including: acquiring first mask data and performing fuzzy processing and projection processing on same to obtain second mask data; performing forward calculation according to the second mask data and a preset surface plasmon near-field photolithography condition to obtain imaging data and forward field data; calculating an imaging error between the imaging data and expected imaging data; performing adjoint calculation on the second mask data to obtain adjoint field data; calculating a gradient matrix of the imaging error relative to the first mask data according to the forward field data and the adjoint field data; and updating the first mask data according to the gradient matrix, repeating the steps for iteration calculation until the optimized mask data is obtained, and outputting a final mask pattern.

Abstract: The present disclosure relates to a method of forming an etching pattern in a semiconductor manufacturing process. Unlike a conventional method of forming a four-layer structure composed of a photoresist film, an anti-reflective film, a SiON film, and an organic hard mask film on a wafer, as preparation for an etching process, the method according to the present disclosure is an innovative etching pattern forming method capable of implementing the same etching pattern as is formed by the conventional method, using a double-layer structure composed of a photoresist film and a multifunctional organic-inorganic mask film.

Abstract: An organometallic compound represented by Formula 1: M(L1)n1(L2)n2??Formula 1 wherein in Formula 1, M, L1, L2, n1, and n2 are the same as described in the specification.

Abstract: Disclosed are platinum or palladium complexes featuring tetradentate ligands with at least one side that has an NN binding motif are disclosed. The disclosed organometallic compounds have a structure of where M is Pt or Pd. Also provided are formulations comprising these organometallic compounds. Further provided are OLEDs and related consumer products that utilize these organometallic compounds.

Abstract: A positive photosensitive resin composition including: (A) an alkali-soluble resin containing at least one or more structures selected from a polyimide structure, a polybenzoxazole structure, a polyamide-imide structure, and a precursor structure thereof; (B) a crosslinkable polymer compound containing a structural unit represented by the following general formula (1) and having a group crosslinked with the component (A); and (C) a compound having a quinonediazide structure for serving as a photosensitizer to generate an acid by light and increase a dissolution speed to an alkaline aqueous solution, the resin composition and a positive photosensitive dry film derived therefrom that enable formation of a fine pattern and high resolution, have excellent mechanical characteristics even when cured at low temperatures, and have no degradation in adhesive force between before and after a high temperature and high humidity test.

Abstract: Provided are a condensed cyclic compound and an organic light-emitting device. The condensed cyclic compound is represented by Formula 1: Details about the constituents of Formula 1 is disclosed.

Abstract: A composition that includes: a homo-N-trans (HNT) iridium complex having an iridium atom, and a first ligand, a second ligand, and a third ligand that are bonded to the iridium atom, the second ligand having the same structure as the first ligand, the third ligand having a different structure from the first and second ligands; and an isomer of the iridium complex, the isomer having an iridium atom, a fourth ligand, a fifth ligand, and the third ligand, the fourth ligand being a ligand represented by the same rational formula as that of the first ligand, and the fifth ligand being a ligand represented by the same rational formula as that of the second ligand. The composition ratio of the isomer relative to a total of the iridium complex and the isomer is 1.5% or more.

Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion.

Abstract: A carboxylate represented by formula (I), a quencher and a resist composition including the same: wherein R1, R2 and R3 each represent a halogen atom, an alkyl fluoride group or a hydrocarbon group which may have a substituent, —CH2— included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO2—, m1 represents an integer of 0 to 5, m2 represents an integer of 0 to 4, m3 represents an integer of 0 to 3, and X1 represents a single bond, —CH2—, —O—, —S—, —CO—, —SO— or —SO2—.

Abstract: An organic electroluminescence device, comprising: an anode, an emitting layer, a first electron-transporting layer, a second electron-transporting layer and a cathode in this order, wherein the second electron-transporting layer comprises a compound represented by the following formula (1), and the emitting layer comprises a compound represented by the following formula (10).

Abstract: The present invention includes a new series of heteroleptic iridium complexes that demonstrate high efficiency in OLED device.

Abstract: A method for building an etching-free hybrid nonlinear waveguide composed of a polymer and an ion-implanted nonlinear crystal is provided. A nonlinear crystal is pretreated, and subjected to ion implantation to obtain an ion-implanted nonlinear crystal. The ion-implanted nonlinear crystal is spin-coated with a photoresist, and subjected to electron beam exposure, heating, and developing, so as to obtain a hybrid optical waveguide composed of a polymer and a nonlinear crystal.

Abstract: As described herein, photosensitive composition comprises RSnL3, where R is a hydrocarbyl ligand with 1-20 carbon atoms and one or more silicon and/or germanium heteroatoms and L is an acetylide ligand (—C?CA, where A is a silyl group with 0 to 6 carbon atoms or an organo group with 1 to 10 carbon atoms). Methods are described wherein photosensitive compositions are synthesized by reacting RX, where X is a halide, and MSnL3, where M is an alkali metal, alkali earth metal or a pseudo-alkali earth metal, L is an acetylide or a dialkylamide. The radiation sensitive compositions are effective for radiation based patterning, such as with EUV light.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A), and an organic solvent. The polymer is crosslinked by dehydrogenative coupling reaction involving hydrogen atoms located at the trityl position on the fluorene ring in each partial structure.

Abstract: A method for manufacturing a semiconductor device includes forming a photoresist layer comprising a photoresist composition over a substrate to form a photoresist-coated substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern in the photoresist layer. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist layer exposing a portion of the substrate, and a purge gas is applied to the patterned photoresist layer.