Abstract: A composition that includes: a homo-N-trans (HNT) iridium complex having an iridium atom, and a first ligand, a second ligand, and a third ligand that are bonded to the iridium atom, the second ligand having the same structure as the first ligand, the third ligand having a different structure from the first and second ligands; and an isomer of the iridium complex, the isomer having an iridium atom, a fourth ligand, a fifth ligand, and the third ligand, the fourth ligand being a ligand represented by the same rational formula as that of the first ligand, and the fifth ligand being a ligand represented by the same rational formula as that of the second ligand. The composition ratio of the isomer relative to a total of the iridium complex and the isomer is 1.5% or more.

Abstract: In the context of forming radiation patternable structures especially for EUV patterning, wafer structures are described comprising a substrate having a smooth top surface and a radiation sensitive organometallic coating having an average thickness of no more than 100 nm and no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion. Corresponding methods for forming a low defect coating comprise spin coating a purified radiation sensitive organometallic resist solution onto a wafer using a spin coater system comprising a delivery line and a delivery nozzle connected to the delivery line to form a coated wafer, and drying the coated wafer to form a radiation sensitive organometallic coating having no more than about 1 defect per square centimeter with a defect size of greater than 48 nm, evaluated with a 3 mm edge exclusion.

Abstract: A carboxylate represented by formula (I), a quencher and a resist composition including the same: wherein R1, R2 and R3 each represent a halogen atom, an alkyl fluoride group or a hydrocarbon group which may have a substituent, —CH2— included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO2—, m1 represents an integer of 0 to 5, m2 represents an integer of 0 to 4, m3 represents an integer of 0 to 3, and X1 represents a single bond, —CH2—, —O—, —S—, —CO—, —SO— or —SO2—.

Abstract: An organic electroluminescence device, comprising: an anode, an emitting layer, a first electron-transporting layer, a second electron-transporting layer and a cathode in this order, wherein the second electron-transporting layer comprises a compound represented by the following formula (1), and the emitting layer comprises a compound represented by the following formula (10).

Abstract: The present invention includes a new series of heteroleptic iridium complexes that demonstrate high efficiency in OLED device.

Abstract: A method for building an etching-free hybrid nonlinear waveguide composed of a polymer and an ion-implanted nonlinear crystal is provided. A nonlinear crystal is pretreated, and subjected to ion implantation to obtain an ion-implanted nonlinear crystal. The ion-implanted nonlinear crystal is spin-coated with a photoresist, and subjected to electron beam exposure, heating, and developing, so as to obtain a hybrid optical waveguide composed of a polymer and a nonlinear crystal.

Abstract: As described herein, photosensitive composition comprises RSnL3, where R is a hydrocarbyl ligand with 1-20 carbon atoms and one or more silicon and/or germanium heteroatoms and L is an acetylide ligand (—C?CA, where A is a silyl group with 0 to 6 carbon atoms or an organo group with 1 to 10 carbon atoms). Methods are described wherein photosensitive compositions are synthesized by reacting RX, where X is a halide, and MSnL3, where M is an alkali metal, alkali earth metal or a pseudo-alkali earth metal, L is an acetylide or a dialkylamide. The radiation sensitive compositions are effective for radiation based patterning, such as with EUV light.

Abstract: A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A), and an organic solvent. The polymer is crosslinked by dehydrogenative coupling reaction involving hydrogen atoms located at the trityl position on the fluorene ring in each partial structure.

Abstract: A method for manufacturing a semiconductor device includes forming a photoresist layer comprising a photoresist composition over a substrate to form a photoresist-coated substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern in the photoresist layer. The latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist layer exposing a portion of the substrate, and a purge gas is applied to the patterned photoresist layer.

Abstract: Disclosed is a benzazole derivative having a heteroaryl group, wherein the benzazole derivative having the heteroaryl group is represented by Chemical Formula 1. Also disclosed is an organic electroluminescence device including an organic layer containing the benzazole derivative having the heteroaryl group: wherein, each of Z1, X1, X2, X3, Ar1, Ar2, Ar3, m1, m2 and q is the same as defined in the specification.

Abstract: Provided is a compound of Formula 1: wherein: Cy1 and Cy2 are each independently an aromatic hydrocarbon ring or aromatic hetero ring that is substituted or unsubstituted; R1 to R9 are each independently hydrogen, deuterium, a halogen group, a cyano group, a nitro group, or a substituted or unsubstituted: silyl, alkyl, alkoxy, cycloalkyl, aryl, amine, or heterocyclic group; m1 is 0 to 3, and m2 and m3 are each 0 to 5; when m1 to m3 are each 2 or more, the substituents in the parenthesis are the same or different; and Z1 to Z4 are each independently CH or N, and n1 and n2 are each 0 to 2, and when Z1 to Z4 are each CH, n1+n2 is 2 to 4, and when one or more of Z1 to Z4 are N, n1+n2 is 1 to 4, and an organic light emitting device including the same.

Abstract: The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition which is excellent in LER performance and a collapse suppressing ability. Furthermore, the present invention provides a resist film, a pattern forming method, and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of an embodiment of the present invention includes a resin having a polarity that increases by the action of an acid; and a compound that generates an acid upon irradiation with actinic rays or radiation, in which the resin has a repeating unit represented by General Formula (B-1).

Abstract: Provided is a positive resist composition for EUV lithography that can form a resist film having high sensitivity to extreme ultraviolet light. The positive resist composition contains a solvent and a copolymer that includes a monomer unit (A) represented by general formula (I) and a monomer unit (B) represented by general formula (II). In the formulae, R1 indicates an organic group including 5 or more fluorine atoms, le indicates a hydrogen atom, a fluorine atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, R3 indicates a hydrogen atom, an unsubstituted alkyl group, or a fluorine atom-substituted alkyl group, p and q are each an integer of 0 to 5, and p+q=5.

Abstract: A resist underlayer composition includes (A) a polymer including a structural unit represented by Chemical Formula 1, a compound represented by Chemical Formula 2, or a combination thereof; (B) a polymer including a structure in which at least one moiety represented by Chemical Formula 3 or Chemical Formula 4 and a moiety represented by Chemical Formula 7 are bound to each other; and (C) a solvent:

Abstract: Disclosed are a photoacid generator, a photoresist composition including the same, and a method of preparing the photoacid generator. The photoacid generator may include a compound represented by Formula 1: wherein, in Formula 1, CY, A1, A2, and B are respectively described in the specification.

Abstract: A polymer compound including a repeating unit represented by Formula 1: wherein, in Formula 1, groups and variables are the same as described in the specification.

Abstract: Provided are a near-infrared light-emitting diode including an osmium (Os)-containing organometallic compound and a device including the near-infrared light-emitting diode. The near-infrared light-emitting diode includes: a first electrode; a second electrode; and an organic layer between the first electrode and the second electrode, where the organic layer includes a near-infrared light-emitting layer, the near-infrared light-emitting layer includes the osmium (Os)-containing organometallic compound.

Abstract: A positive resist composition comprising a base polymer comprising repeat units having the structure of a sulfonium salt of a substituted or unsubstituted salicylic acid exhibits a high sensitivity, high resolution, low edge roughness and small size variation, and forms a pattern of good profile after exposure and development.

Abstract: Provided is a compound of Formula 1: Ar1 to Ar4 are each independently hydrogen, deuterium, a halogen group, a nitrile group, or a substituted or unsubstituted: silyl, boron, alkyl, alkenyl, alkynyl, alkoxy, aryloxy, cycloalkyl, aryl, or heterocyclic group, or adjacent groups are bonded together to form a substituted or unsubstituted aliphatic hydrocarbon ring; A1 and A2 are each independently hydrogen, deuterium, a halogen group, a nitrile group, or a substituted or unsubstituted: silyl, boron, alkyl, alkenyl, alkynyl, alkoxy, aryloxy, cycloalkyl, aryl, or heterocyclic group, or are bonded together to form a substituted or unsubstituted ring; R1 to R3 are each independently hydrogen, deuterium, a halogen group, a nitrile group, or a substituted or unsubstituted; silyl, boron, alkyl, alkenyl, alkynyl, alkoxy, aryloxy, cycloalkyl, aryl, amine, or heterocyclic group; and n1 to n3 are each 0 to 3, and 2 or more, the substituents are the same as or different from each other, and an organic light emitting d

Abstract: Novel Pt tetradentate complexes having Pt—O bond is disclosed. These complexes are useful as emitters in phosphorescent OLEDs.