Abstract: A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

Abstract: An array substrate and a display device having the array substrate are provided. The array substrate comprises a display region and a non-display region disposed at the periphery of the display region. The non-display region comprises a gate driver region (GOA region), which comprises a first patterned metal layer formed on a base substrate, a first insulating layer formed on the first patterned metal layer, a second patterned metal layer formed on the first insulating layer, a second insulating layer covering the second patterned metal layer, and a third patterned metal layer formed at a side of the second insulating layer away from the base substrate. The third patterned metal layer comprises a plurality of metal wires insulated from each other and connected to the first patterned metal layer and the second patterned metal layer respectively by through holes and used as connecting lines between elements of the gate driver.

Abstract: A method of forming a semiconductor structure is provided. The method including forming a first vertical channel on a first layer of source/drain material that is perpendicular relative to the first vertical channel, and forming a first source/drain semiconductor structure by removing one or more portions of the first layer of source/drain material such that i) the first source/drain semiconductor structure has a vertical side that is substantially planar with a vertical side of the first vertical channel and ii) a width of the source/drain is greater than a width of the first vertical channel, wherein the first source/drain semiconductor structure extends perpendicularly from its vertical side farther than the first vertical channel extends perpendicularly from its vertical side.

Abstract: A display apparatus may include a substrate having a first bending area between a first area and a second area, the first bending area to be bent with a first bending axis that extends along a first direction, as a center; a first inorganic insulating layer on the substrate and having a first opening corresponding to the first bending area; a first organic material layer filling at least a portion of the first opening; and a first conductive layer that extends from the first area to the second area through the first bending area and is on the first organic material layer. The first organic material layer may have a concavo-convex surface at least in a portion of an upper surface thereof. At least a portion of the first conductive layer may extend along a third direction forming an angle of about 0° to about 90° with the first direction.

Abstract: Discussed is an organic light emitting display device. The organic light emitting display device according to an embodiment includes a first emission part between a first electrode and a second electrode and a second emission part on the first emission part. The first emission part includes a first hole transport layer, a first emission layer, and a first electron transport layer, and the second emission part includes a second hole transport layer, a second emission layer, and a second electron transport layer. The second emission layer includes at least two zones including a hole-type host and an electron-type host, and a zone among the at least two zones closer to the first electrode than the second electrode, a ratio of the mixed host to the electron-type host is higher than a ratio of the mixed host to the hole-type host in the zone.

Abstract: Some embodiments of the present disclosure provide a microelectromechanical systems (MEMS). The MEMS includes a semiconductive block. The semiconductive block includes a protruding structure. The protruding structure includes a bottom surface. The semiconductive block includes a sensing structure. A semiconductive substrate includes a conductive region. The conductive region includes a first surface under the sensing structure. The first surface is substantially coplanar with the bottom surface. A dielectric region includes a second surface not disposed over the first surface.

Abstract: A conductive line structure includes two conductive lines in a layout. The two cut lines are over at least a part of the two conductive lines in the layout. The cut lines designate cut sections of the two conductive lines and the cut lines are spaced from each other within a fabrication process limit. The two cut lines are connected in the layout. The two conductive lines are patterned over a substrate in a physical integrated circuit using the two connected parallel cut lines. The two conductive lines are electrically conductive.

Abstract: A display device, including a substrate having a first region and second regions; transistors on the substrate in the first region and the second regions; first electrodes each connected to the transistors; an organic emission layer on the first electrodes; and second electrodes on the organic emission layer, molecular weights of organic materials of the organic emission layer in the first region and the organic emission layer in the second regions being different from each other.

Abstract: A machine tool includes an operation evaluation section that evaluates an operation thereof and a machine learning device that performs the machine learning of a movement amount of an axis thereof. The machine learning device calculates a reward based on state data including the output of the operation evaluation section, performs the machine learning of the determination of the movement amount of the axis, and determines the movement amount of the axis based on a machine learning result and outputs the determined movement amount. The machine learning device performs the machine learning of the determination of the movement amount of the axis based on the determined movement amount of the axis, the acquired state data, and the calculated reward.

Abstract: A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover. The organic film is removed by utilizing low adhesion of an interface between the organic compound-containing layer and the electrode terminal, whereby the electrode terminal can be exposed without damage to the electrode terminal.

Abstract: An organic light-emitting panel includes a reflective electrode, a functional layer, having a single or multi-layer structure, located on the reflective electrode, an organic light-emitting layer located on the functional layer, a transparent electrode located above the organic light-emitting layer, a low refractive index layer located on the transparent electrode, and a first thin-film sealing layer located on the low refractive index layer. The low refractive index layer has a lower refractive index than both the transparent electrode and the first thin-film sealing layer. Difference between respective refractive indices of the low refractive index layer and the transparent electrode is 0.4-1.1. Difference between respective refractive indices of the low refractive index layer and the first thin-film sealing layer is 0.1-0.8. The low refractive index layer has thickness of 20-130 nm.

Abstract: An actuator system includes a motor, a ballscrew assembly coupled to the motor, a no back brake device coupled to the ballscrew assembly, and a sensor coupled to the ballscrew assembly. The sensor is configured to acquire load data regarding a load applied to the no back brake device. A control module is configured to determine an estimated coefficient of friction for the no back brake device based on the load data, and transmit an alert signal based on determining that the estimated coefficient of friction is outside a predetermined range. The control module is coupled with the sensor and includes a processor coupled with a non-transitory processor-readable medium storing processor executable code.

Abstract: An organic light-emitting diode (OLED) structure includes an organic light-emitting diode having a first electrode, one or more layers of organic material disposed on at least a portion of the first electrode, and a second electrode disposed on at least a portion of the one or more layers of organic material. At least a portion of a tether extending from a periphery of the organic light-emitting diode. The organic light-emitting diodes can be printable organic light-emitting diode structures that are micro transfer printed over a display substrate to form a display.

Abstract: In an organic electroluminescence (EL) display panel including: a substrate that is flexible and is made of a resin material; a plurality of light-emitting elements that are disposed on the substrate and are spaced away from one another; and a plurality of wire units that are disposed on the substrate and establish electrical connection between the plurality of light-emitting elements, a first region of the substrate that is below the light-emitting elements has greater stiffness than a second region of the substrate that is a remainder of the substrate.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a cavity disposed in a substrate and enclosed by a first surface and a second surface opposite to the first surface. The semiconductor structure also includes a first electrode pair having a first electrode on the first surface and a second electrode on the second surface. The first electrode pair is configured to measure a first spacing between the first surface and the second surface. The semiconductor structure further includes a second electrode pair having a third electrode on the first surface and a fourth electrode on the second surface. The second electrode pair is configured to measure a second spacing between the first surface and the second surface.