Patents Examined by Shrive P. Beck
  • Patent number: 6616974
    Abstract: The invention relates to a form for the rotary machine printing, coating or imprinting of web-shaped materials and a method of producing the form wherein at a carrier having a cylindrical surface area an elastomer layer is attached which after curing at the outer circumference thereof is machined and engaged to result in a cylindrical shape. Furthermore the invention is characterized in that the elastomer layer is formed of a hot cure single-constituent or two-constituent silicone polymer.
    Type: Grant
    Filed: November 8, 1999
    Date of Patent: September 9, 2003
    Assignee: Polywest Kunstofftechnik Saueressig & Partner GmbH & Co. KG
    Inventors: Heinz Lorig, Jörg Richard, Klaus Langerbeins, Alfred Ernst Link
  • Patent number: 6613151
    Abstract: Vapor deposition of a uniform thickness thin film of lubricant on at least one surface of a substrate, comprises the steps of: (a) providing an apparatus comprising: (i) a chamber having an interior space maintained below atmospheric pressure; (ii) a substrate loader/unloader for supplying the interior space with at least one substrate and for withdrawing at least one substrate from the interior space; (iii) at least one lubricant vapor source for supplying the interior space with a stream of lubricant vapor; and (iv) a substrate transporter/conveyor for continuously moving at least one substrate past the stream of vapor from the at least one lubricant vapor source; (b) supplying the interior space with a substrate having at least one surface; (c) continuously moving the substrate past the stream of lubricant vapor and depositing a uniform thickness thin film of the lubricant on the at least one surface; and (d) withdrawing the lubricant-coated substrate from the interior space.
    Type: Grant
    Filed: March 6, 2001
    Date of Patent: September 2, 2003
    Assignee: Seagate Technology LLC
    Inventors: Michael Joseph Stirniman, Paul Stephen McLeod
  • Patent number: 6613399
    Abstract: Disclosed herein is a process for producing a printed substrate, comprising a step of applying droplets of a liquid containing a material for a desired component to be formed on a substrate to the surface of the substrate to form the component on the substrate, wherein the process comprises, prior to the step of applying the droplets to the substrate surface, a step of subjecting the substrate to a surface treatment in such a manner that the contact angle of the droplet applied with the surface of the substrate falls within a range of from 20° to 50°.
    Type: Grant
    Filed: March 23, 1998
    Date of Patent: September 2, 2003
    Assignee: Canon Kabushiki Kaisha
    Inventors: Masahiko Miyamoto, Mitsutoshi Hasegawa, Kazuhiro Sando, Kazuya Shigeoka, Masato Yamanobe, Takayuki Teshima, Toshifumi Yoshioka
  • Patent number: 6613396
    Abstract: An optical disc and its manufacturing method in which humps may be prohibited from being formed on an outer rim area of the disc to assure optimum surface properties of a light transmitting layer of the disc to contribute to further increase in recording capacity. On a substrate 2 of an optical disc 1 are sequentially formed a recording portion 6 and a light transmitting layer 5. The light falls on the light transmitting layer 5 to record and/or reproduce information signals for a signal recording area 6a of the substrate 2. The radial distance D from the outermost rim of the substrate 2 to the signal recording area 6a is selected to be larger than the radial width L of a hump 5a formed on the outer rim of the light transmitting layer 5. The hump 5a has a height h from the surface of the light transmitting layer 5 not larger than 70 &mgr;m.
    Type: Grant
    Filed: April 19, 2000
    Date of Patent: September 2, 2003
    Assignee: Sony Corporation
    Inventors: Masato Nishida, Tetsuhiro Sakamoto, Toshiyuki Kashiwagi, Motohiro Furuki
  • Patent number: 6613242
    Abstract: Ruthenium, osmium and their oxides can be etched simply and rapidly by supplying an atomic oxygen-donating gas, typically ozone, to the aforementioned metals and their oxides through catalysis between the metals and their reactors and application of the catalysis not only to the etching but also to chamber cleaning ensures stable operation of reactors and production of high quality devices.
    Type: Grant
    Filed: October 23, 2001
    Date of Patent: September 2, 2003
    Inventors: Miwako Nakahara, Toshiyuki Arai, Shigeru Ohno, Takashi Yunogami, Sukeyoshi Tsunekawa, Kazuto Watanabe
  • Patent number: 6613691
    Abstract: An oxide etching process, particular useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. The invention preferably uses the unsaturated 4-carbon fluorocarbons, specifically hexafluorobutadiene (C4F6), which has a below 10°C. and is commercially available. The hexafluorobutadiene together with argon is excited into a high-density plasma in a reactor which inductively couples plasma source power into the chamber and RF biases the pedestal electrode supporting the wafer. Preferably, a two-step etch is used process is used in which the above etching gas is used in the main step to provide a good vertical profile and a more strongly polymerizing fluorocarbon such as difluoromethane (CH2F2) is added in the over etch to protect the nitride corner.
    Type: Grant
    Filed: September 29, 2000
    Date of Patent: September 2, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Raymond Hung, Joseph P. Caulfield, Hongching Shan, Ruiping Wang, Gerald Z. Yin
  • Patent number: 6613391
    Abstract: A process to render flame- and fireproof surfaces and materials and inhibit the spread of fire on materials of various, and diverse, chemical nature and affinity, using one basic fire and flame retardant material, with wide ranging chemical affinity. Preparations are non toxic, for professional and household use, in a stable colloidal dispersion. Intumescent mixtures include a base comprising a source of phosphoric acid, a charring agent and a blowing agent, further comprising flame spread reduction materials, thermal resistance enhancers, thermal transmission reduction and refractory, elasticity, water resistant materials, and combinations thereof. Preparations are further treated with activated bipolar chemicals to change their chemical affinity, to make them applicable to synthetic and metallic substrates and surfaces as well. to be used on buidling materials, furniture, home furnishings, rubber, electric wires, walls, toys, etc.
    Type: Grant
    Filed: January 27, 2000
    Date of Patent: September 2, 2003
    Inventor: Henry Gang
  • Patent number: 6610211
    Abstract: The invention encompasses methods of processing internal surfaces of a chemical vapor deposition reactor. In one implementation, material is deposited over internal surfaces of a chemical vapor deposition reactor while processing semiconductor substrates therein. The deposited material is treated with atomic oxygen. After the treating, at least some of the deposited material is etched from the reactor internal surfaces. In one embodiment, first etching is conducted of some of the deposited material from the reactor internal surfaces. After the first etching, remaining deposited material is treated with atomic oxygen. After the treating, second etching is conducted of at least some of the remaining deposited material from the reactor internal surfaces. In one embodiment, the deposited material is first treated with atomic oxygen. After the first treating, first etching is conducted of some of the deposited material from the reactor internal surfaces.
    Type: Grant
    Filed: March 1, 2000
    Date of Patent: August 26, 2003
    Assignee: Micron Technology, Inc.
    Inventors: F. Daniel Gealy, Husam N. Al-Shareef, Scott Jeffrey DeBoer
  • Patent number: 6610350
    Abstract: A method of modifying a surface of an ophthalmic lens, includes the steps of: generating plasma at an atmospheric pressure between electrodes of a plasma generating device; and blowing the plasma from the plasma generating device by introducing a gas between the electrodes. The ophthalmic lens, which is located outside the plasma generating device, is irradiated with the plasma blown out from the plasma generating device to modify the surface of the ophthalmic lens to form a final ophthalmic lens product.
    Type: Grant
    Filed: October 1, 2001
    Date of Patent: August 26, 2003
    Assignee: Menicon Co., Ltd.
    Inventors: Hiroaki Suzuki, Yuuji Gotou, Kazuhiko Nakada
  • Patent number: 6607673
    Abstract: A cylinder array of diamond having a dent in its cylinder top face is manufactured by subjecting a cylinder array of diamond to a plasma etching.
    Type: Grant
    Filed: August 17, 2001
    Date of Patent: August 19, 2003
    Assignee: The University of Tokyo
    Inventors: Akira Fujishima, Hideki Masuda
  • Patent number: 6607788
    Abstract: The invention embraces basecoating compositions comprising as binder constituents (i) an acrylate dispersion having a content of from 30 to 60% by weight of C1-C8-alkyl (meth)acrylate-containing monomers, from 30 to 60% by weight of vinylaromatic monomers and from 0.5 to 10% by weight of (meth)acrylic acid in the polymer, and (ii) a dispersion of a polymer which is obtainable by subjecting an ethylenically unsaturated monomer or a mixture of ethylenically unsaturated monomers to free-radical polymerization in the presence of a water-insoluble initiator or of a mixture of water-insoluble initiators and in an aqueous dispersion of a polyurethane resin which has a number-average molecular weight Mn of from 1000 to 30,000 daltons and comprises on average from 0.05 to 1.
    Type: Grant
    Filed: April 18, 2000
    Date of Patent: August 19, 2003
    Assignee: BASF Coatings AG
    Inventors: Egon Wegner, Gudrun Wiemann, Ekkehard Sapper, Harald Angermüller
  • Patent number: 6605315
    Abstract: The object of the present invention is to provide a bonding paste applicator and a method of applying a bonding paste which allow satisfactory paste applying quality and excellent operability to be realized. A bonding paste application method for applying a bonding paste by making a drawing with a paste applying nozzle made to move to a position, where a chip is mounted on a substrate, comprises the steps of storing in advance in a storing unit 46 a drawing pattern for controlling each of X, Y and Z axes to move a paste applying nozzle and a drawing pattern setting table 53 to show a category corresponding to the size of a chip to be bonded, selecting a drawing pattern corresponding to the size of the chip, which has been designated, by means of a drawing pattern selecting unit 54 and obtaining a speed pattern for each of the X, Y and Z axes based on the selected drawing pattern by means of a speed pattern computing unit 55.
    Type: Grant
    Filed: November 3, 2000
    Date of Patent: August 12, 2003
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Mitsuru Ozono, Seiichi Sato, Nobuyuki Suefuji, Nobuyuki Iwashita
  • Patent number: 6605226
    Abstract: A method is disclosed for speeding workpiece thoughput in low pressure, high temperature semiconductor processing reactor. The method includes loading a workpiece into a chamber at atmospheric pressure, bringing the chamber down to an intermediate pressure, and heating the wafer while under the intermediate pressure. The chamber is then pumped down to the operating pressure. The preferred embodiments involve single wafer plasma ashers, where a wafer is loaded onto lift pins at a position above a wafer chuck, the pressure is rapidly pumped down to about 40 Torr by rapidly opening and closing an isolation valve, and the wafer is simultaneously lowered to the heated chuck. Alternatively, the wafer can be pre-processed to remove an implanted photoresist crust at a first temperature and the chamber then backfilled to about 40 Torr for further heating to close to the chuck temperature. At 40 Torr, the heat transfer from the chuck to the wafer is relatively fast, but still slow enough to avoid thermal shock.
    Type: Grant
    Filed: June 10, 2002
    Date of Patent: August 12, 2003
    Assignee: Matrix Integrated Systems, Inc.
    Inventors: Albert Wang, Scott Baron, Prasad Padmanabhan, Gerald M. Cox
  • Patent number: 6605313
    Abstract: There is described a process and apparatus for the physical vapor deposition of an anisotropic phosphor composition with an auto-collimating, optical waveguide structure.
    Type: Grant
    Filed: January 26, 1999
    Date of Patent: August 12, 2003
    Assignee: Air Techniques, Inc.
    Inventors: Claude Goodman, Alan Lyon, Daniel Wildermuth
  • Patent number: 6605230
    Abstract: The present invention relates to a novel process for removing sidewall residue after dry-etching process. Conventionally, after dry-etching, photoresist and sidewall residues are removed by ozone ashing and hot sulfuric acid. Normally, they are hard to be removed completely. It was found in the present invention that the addition of fluorine-containing compound, preferably hydrogen fluoride and ammonium fluoride, in sulfuric acid results in complete removal of photoresist and sidewall residue without the need for stripper. The process is simple and does not affect the original procedures or the other films on the substrate. The present invention also relates to a novel solution for removing sidewall residue after dry-etching, which comprises sulfuric acid and a fluorine-containing compound, preferably hydrogen fluoride and ammonium fluoride, in the range of from 10:1 to 1000:1 by weight.
    Type: Grant
    Filed: March 26, 1999
    Date of Patent: August 12, 2003
    Assignee: Merck Patent GmbH
    Inventors: Ming-Chi Liaw, Tien-Sheng Chao, Tan-Fu Lei
  • Patent number: 6605228
    Abstract: Proposed is a method for fabricating a planar optical waveguide device having a plurality of core segments formed between a lower clad layer and an upper clad layer, in which a hot isostatic pressing process (HIP) is carried out during the fabrication process. The lower clad layer may consist of a substrate or a buffer layer formed on a substrate. Each layer may be formed either by a low-temperature film-forming process such as CVD or by the flame hydrolysis pressing process. The HIP process is also effective in eliminating voids when the core is formed in a recess of the lower clad layer. According to the tests conducted by the inventors, it was found that the HIP process can be conducted without requiring any protective layer or a gas barrier through proper selection of the condition for the HIP process, as opposed to the common belief that a protective layer or a gas barrier is essential for the HIP process.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: August 12, 2003
    Assignee: NHK Spring Co., Ltd.
    Inventors: Shigeru Kawaguchi, Michiya Masuda, Yutaka Natsume, Takayuki Senda
  • Patent number: 6602560
    Abstract: A method of removing residual fluorine present in a HDP-CVD chamber which includes a high pressure seasoning process, a dry-cleaning process, and a low-pressure deposition process.
    Type: Grant
    Filed: July 16, 2002
    Date of Patent: August 5, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Yi-Lung Cheng, Wen-Kung Cheng, Ming-Hwa Yoo, Szu-An Wu, Ying-Long Wang, Pei-Fen Chou
  • Patent number: 6602434
    Abstract: An oxide etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. One aspect of the invention uses one of four hydrogen-free fluorocarbons having a low F/C ratio, specifically hexafluorobutadiene (C4F6), octafluoropentadiene (C5F8), hexafluorocyclobutene (C4F6), and hexafluorobenzene (C6F6). At least hexafluorobutadiene has a boiling point below 10° C. and is commercially available. Another aspect of the invention, uses an unsaturated fluorocarbon such as pentafluoropropylene (C3HF5), and trifluoropropyne (C3HF3), both of which have boiling points below 10° C. and are commercially available.
    Type: Grant
    Filed: November 15, 1999
    Date of Patent: August 5, 2003
    Assignee: Applied Materials, Inc.
    Inventors: Hoiman (Raymond) Hung, Joseph P. Caulfield, Hongqing Shan, Ruiping Wang, Gerald Z. Yin
  • Patent number: 6602427
    Abstract: A method for fabricating a micromachined optical mechanical modulator based WDM transmitter/receiver module is described. The Fabry-Perot cavity of the mechanical modulator is structured from a three-polysilicon-layer stack formed on the surface of a single crystalline silicon substrate. The polysilicon membrane and its supporting polysilicon beams of the cavity are cut from the top polysilicon layer of the stack and are released by selective etching of their underlying polysilicon. The etched underlying polysilicon layer is heavily doped and then converted into porous polysilicon by anodization in HF solution. The polysilicon membrane and its supporting polysilicon are finally released using a reactive ion etch process to avoid stiction often generated in a wet etch process. A conic hole is formed on the backside of the single crystalline silicon substrate for receiving an optical fiber that can be passively aligned with the Fabry-Perot cavity.
    Type: Grant
    Filed: August 28, 2000
    Date of Patent: August 5, 2003
    Inventor: Xiang Zheng Tu
  • Patent number: 6599560
    Abstract: A liquid coating device and method for coating a coatable composition on a workpiece to form a coating, wherein a parameter indicative of barometric pressure is measured and at least one thickness-affecting process parameter is adjusted in order to compensate for the effects of variations in barometric pressure on coating thickness uniformity.
    Type: Grant
    Filed: September 16, 1999
    Date of Patent: July 29, 2003
    Assignee: FSI International, Inc.
    Inventors: Joseph W. Daggett, Daniel J. Williams, Kevin G. Kemp, Joseph W. Cayton